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2N3904 / MMBT3904 / PZT3904 — NPN General Purpose Amplifier

© 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com

2N3904 / MMBT3904 / PZT3904 Rev. B0 1

October 2011

2N3904 / MMBT3904 / PZT3904

NPN General Purpose Amplifier

Features

• This device is designed as a general purpose amplifier and switch.

• The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier.

Absolute Maximum Ratings* Ta = 25°C unless otherwise noted

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle

operations.

Thermal Characteristics Ta = 25°C unless otherwise noted

* Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06".

** Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.

Symbol Parameter Value Units

VCEO Collector-Emitter Voltage 40 V

VCBO Collector-Base Voltage 60 V

VEBO Emitter-Base Voltage 6.0 V

ICCollector Current - Continuous 200 mA

TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C

Symbol Parameter Max. Units

2N3904 *MMBT3904 **PZT3904

PDTotal Device Dissipation

Derate above 25°C

625

5.0

350

2.8

1,000

8.0

mW

mW/°C

RθJC Thermal Resistance, Junction to Case 83.3 °C/W

RθJA Thermal Resistance, Junction to Ambient 200 357 125 °C/W

2N3904 MMBT3904 PZT3904

EBC

TO-92 SOT-23 SOT-223

Mark:1A

C

B

EE

BC

C

2N3904 / MMBT3904 / PZT3904 — NPN General Purpose Amplifier

© 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com

2N3904 / MMBT3904 / PZT3904 Rev. B0 2

Electrical Characteristics Ta = 25°C unless otherwise noted

* Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0%

Ordering Information

Symbol Parameter Test Condition Min. Max. Units

OFF CHARACTERISTICS

V(BR)CEO Collector-Emitter Breakdown Voltage IC = 1.0mA, IB = 0 40 V

V(BR)CBO Collector-Base Breakdown Voltage IC = 10μA, IE = 0 60 V

V(BR)EBO Emitter-Base Breakdown Voltage IE = 10μA, IC = 0 6.0 V

IBL Base Cutoff Current VCE = 30V, VEB = 3V 50 nA

ICEX Collector Cutoff Current VCE = 30V, VEB = 3V 50 nA

ON CHARACTERISTICS*

hFE DC Current Gain IC = 0.1mA, VCE = 1.0V

IC = 1.0mA, VCE = 1.0V

IC = 10mA, VCE = 1.0V

IC = 50mA, VCE = 1.0V

IC = 100mA, VCE = 1.0V

40

70

100

60

30

300

VCE(sat) Collector-Emitter Saturation Voltage IC = 10mA, IB = 1.0mA

IC = 50mA, IB = 5.0mA

0.2

0.3

V

V

VBE(sat) Base-Emitter Saturation Voltage IC = 10mA, IB = 1.0mA

IC = 50mA, IB = 5.0mA

0.65 0.85

0.95

V

V

SMALL SIGNAL CHARACTERISTICS

fTCurrent Gain - Bandwidth Product IC = 10mA, VCE = 20V,

f = 100MHz

300 MHz

Cobo Output Capacitance VCB = 5.0V, IE = 0,

f = 1.0MHz

4.0 pF

Cibo Input Capacitance VEB = 0.5V, IC = 0,

f = 1.0MHz

8.0 pF

NF Noise Figure IC = 100μA, VCE = 5.0V,

RS = 1.0kΩ,

f = 10Hz to 15.7kHz

5.0 dB

SWITCHING CHARACTERISTICS

tdDelay Time VCC = 3.0V, VBE = 0.5V

IC = 10mA, IB1 = 1.0mA

35 ns

trRise Time 35 ns

tsStorage Time VCC = 3.0V, IC = 10mA,

IB1 = IB2 = 1.0mA

200 ns

tfFall Time 50 ns

Part Number Marking Package Packing Method Pack Qty

2N3904BU 2N3904 TO-92 BULK 10000

2N3904TA 2N3904 TO-92 AMMO 2000

2N3904TAR 2N3904 TO-92 AMMO 2000

2N3904TF 2N3904 TO-92 TAPE REEL 2000

2N3904TFR 2N3904 TO-92 TAPE REEL 2000

MMBT3904 1A SOT-23 TAPE REEL 3000

MMBT3904_D87Z 1A SOT-23 TAPE REEL 10000

PZT3904 3904 SOT-223 TAPE REEL 2500

2N3904 / MMBT3904 / PZT3904 — NPN General Purpose Amplifier

© 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com

2N3904 / MMBT3904 / PZT3904 Rev. B0 3

Typical Performance Characteristics

Base-Emitter ON Voltage vs

Collector Current

0.1 1 10 100

0.2

0.4

0.6

0.8

1

I - COLLECTOR CURRENT (mA)

V - BASE-EMITTER ON VOLTAGE (V)

BE(ON)

C

V = 5V

CE

25 °C

125 °C

- 40 °C

Base-Emitter Saturation

Voltage vs Collector Current

0.1 1 10 100

0.4

0.6

0.8

1

I - COLLECTOR CURRENT (mA)

V - BASE-EMITTER VOLTAGE (V)

BESAT

C

β

= 10

25 °C

125 °C

- 40 °C

Collector-Emitter Saturation

Voltage vs Collector Current

0.1 1 10 100

0.05

0.1

0.15

I - COLLECTOR CURRENT (mA)

V - COLLECTOR-EMITTER VOLTAGE (V)

CESAT

25 °C

C

β

= 10

125 °C

- 40 °C

Collector-Cutoff Current

vs Ambient Temperature

25 50 75 100 125 150

0.1

1

10

100

500

T - AMBIENT TEMPERATURE ( C)

I - COLLECTOR CURRENT (nA)

A

V = 30V

CB

CBO

°

Capacitance vs

Reverse Bias Voltage

0.1 1 10 100

1

2

3

4

5

10

REVERSE BIAS VOLTAGE (V)

CAPACITANCE (pF)

Cobo

C

ibo

f = 1.0 MHz

Typical Pulsed Current Gain

vs Collector Current

0. 1 1 10 1 00

0

100

200

300

400

500

I - COLLECTOR CURRENT (mA)

h - TYPICAL PULSED CURRENT GAIN

FE

- 40 °C

25 °C

C

V = 5V

CE

125 °C

β

β

2N3904 / MMBT3904 / PZT3904 — NPN General Purpose Amplifier

© 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com

2N3904 / MMBT3904 / PZT3904 Rev. B0 4

Typical Performance Characteristics (continued)

Power Dissipation vs

Ambient Temperature

0 25 50 75 100 125 150

0

0.25

0.5

0.75

1

TEMPERATURE ( C)

P - POWER DISSIPATION (W)

D

o

SOT-223

SOT-23

TO-92

Noise Figure vs Frequency

0.1 1 10 100

0

2

4

6

8

10

12

f - FREQUENCY (kHz)

NF - NOISE FIGURE (dB)

V = 5.0V

CE

I = 100

μ

A, R = 500

Ω

CS

I = 1.0 mA

R = 200

Ω

C

S

I = 50

μ

A

R = 1.0 k

Ω

C

S

I = 0.5 mA

R = 200

Ω

C

S

k

Ω

Noise Figure vs Source Resistance

0.1 1 10 100

0

2

4

6

8

10

12

R - SOURCE RESISTANCE ( )

NF - NOISE FIGURE (dB)

I = 100

μ

A

C

I = 1.0 mA

C

S

I = 50

μ

A

C

I = 5.0 mA

C

θ

- DEGREES

0

40

60

80

100

120

140

160

20

180

Current Gain and Phase Angle

vs Frequency

1 10 100 1000

0

5

10

15

20

25

30

35

40

45

50

f - FREQUENCY (MHz)

h - CURRENT GAIN (dB)

θ

V = 40V

CE

I = 10 mA

C

hfe

fe

Turn-On Time vs Collector Current

110100

5

10

100

500

I - COLLECTOR CURRENT (mA)

TIME (nS)

I = I =

B1

C

B2

Ic

10

40V

15V

2.0V

t @V = 0V

CB

d

t @V = 3.0V

CC

r

Rise Time vs Collector Current

1 10 100

5

10

100

500

I - COLLECTOR CURRENT (mA)

t - RISE TIME (ns)

I = I =

B1

C

B2

Ic

10

T = 125°C

T = 25°C

J

V = 40V

CC

r

J

Ω

θ

μ

A

kΩμ

A

μ

A

Ω

ΩμA

( kΩ )

θ

2N3904 / MMBT3904 / PZT3904 — NPN General Purpose Amplifier

© 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com

2N3904 / MMBT3904 / PZT3904 Rev. B0 5

Typical Performance Characteristics (continued)

Storage Time vs Collector Current

1 10 100

5

10

100

500

I - COLLECTOR CURRENT (mA)

t - STORAGE TIME (ns)

I = I =

B1

C

B2

Ic

10

S

T = 125°C

T = 25°C

J

J

Fall Time vs Collector Current

1 10 100

5

10

100

500

I - COLLECTOR CURRENT (mA)

t - FALL TIME (ns)

I = I =

B1

C

B2

Ic

10

V = 40V

CC

f

T = 125°C

T = 25°C

J

J

Current Gain

0.1 1 10

10

100

500

I - COLLECTOR CURRENT (mA)

h - CURRENT GAIN

V = 10 V

CE

C

fe

f = 1.0 kHz

T = 25 C

A o

Output Admittance

0.1 1 10

1

10

100

I - COLLECTOR CURRENT (mA)

h - OUTPUT ADMITTANCE ( mhos)

V = 10 V

CE

C

oe

f = 1.0 kHz

T = 25 C

A o

μ

Input Impedance

0.1 1 10

0.1

1

10

100

I - COLLECTOR CURRENT (mA)

h - INPUT IMPEDANCE (k )

V = 10 V

CE

C

ie

f = 1.0 kHz

T = 25 C

A o

Ω

Voltage Feedback Ratio

0.1 1 10

1

2

3

4

5

7

10

I - COLLECTOR CURRENT (mA)

h - VOLTAGE FEEDBACK RATIO (x10 )

V = 10 V

CE

C

re

f = 1.0 kHz

T = 25 C

A o

_4

(kΩ)

μn

h

os

2N3904 / MMBT3904 / PZT3904 — NPN General Purpose Amplifier

© 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com

2N3904 / MMBT3904 / PZT3904 Rev. B0 6

Test Circuits

10 KΩΩ

ΩΩ

Ω

3.0 V

275 ΩΩ

ΩΩ

Ω

t1

C1 <<

<<

< 4.0 pF

Duty Cycle ==

==

= 2%

Duty Cycle ==

==

= 2%

<<

<<

< 1.0 ns

- 0.5 V

300 ns

10.6 V

10 < <

< <

< t1 <<

<<

< 500 μμ

μμ

μs

10.9 V

- 9.1 V

<<

<<

< 1.0 ns

0

0

10 KΩΩ

ΩΩ

Ω

3.0 V

275 ΩΩ

ΩΩ

Ω

C1 <<

<<

< 4.0 pF

1N916

FIGURE 2: Storage and Fall Time Equivalent Test Circuit

FIGURE 1: Delay and Rise Time Equivalent Test Circuit

300ns

=

< 1.0ns

< 4.0pF

< 4.0pF

< 1.0ns

=

10 < t1 < 500 μs

Ω

Ω

kΩ

kΩ

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Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild

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Rev. I57

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