2N4117A, 2N4118A, 2N4119A, PN4117A, PN4118A, PN4119A, SST4117, SST4118, SST4119 Datasheet. Www.s Manuals.com. Vishay

User Manual: Marking of electronic components, SMD Codes T7, T7***, T7-, T7W, T7p, T7t, t70, t71, t72, t73, t74, t75, t7C, t7F, t7R, t7T, t7V, t7X. Datasheets 2N7002F, APX824-26W5, BSR15, BZX384-C3V6, BZX84-A27, BZX84-B16, BZX84-B18, BZX84-B20, BZX84-B22, BZX84-B24, PDTA115EU, PDTD113ET, PDTD113ZT, PDTD123ET, PDTD123YT, SST4117, ZUMT817-25.

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2N/PN/SST4117A Series
Vishay Siliconix

N-Channel JFETs
2N4117A

PN4117A SST4117

2N4118A

PN4118A SST4118

2N4119A

PN4119A SST4119

PRODUCT SUMMARY
Part Number

VGS(off) (V)

V(BR)GSS Min (V)

gfs Min (mS)

IDSS Min (mA)

4117

−0.6 to −1.8

−40

70

30

4118

−1 to −3

−40

80

80

4119

−2 to −6

−40

100

200

FEATURES
D
D
D
D

Ultra-Low Leakage: 0.2 pA
Very Low Current/Voltage Operation
Ultrahigh Input Impedance
Low Noise

BENEFITS

APPLICATIONS

D Insignificant Signal Loss/Error Voltage
with High-Impedance Source
D Low Power Consumption (Battery)
D Maximum Signal Output, Low Noise
D High Sensitivity to Low-Level Signals

D High-Impedance Transducer
Amplifiers
D Smoke Detector Input
D Infrared Detector Amplifier
D Precision Test Equipment

DESCRIPTION
The 2N/PN/SST4117A series of n-channel JFETs provide
ultra-high input impedance. These devices are specified with
a 1-pA limit and typically operate at 0.2 pA. This makes them
perfect choices for use as high-impedance sensitive front-end
amplifiers.

TO-206AF
(TO-72)

TO-226AA
(TO-92)

S

C
1

The hermetically sealed TO-206AF package allows full
military processing per MIL-S-19500 (see Military
Information). The TO-226A (TO-92) plastic package provides
a low-cost option. The TO-236 (SOT-23) package provides
surface-mount capability. Both the PN and SST series are
available in tape-and-reel for automated assembly (see
Packaging Information).

D

TO-236
(SOT-23)

1

4

D
S

3
S

2

3

D

G
G

Top View
2N4117A
2N4118A
2N4119A

1

2

G

2

3
Top View
PN4117A
PN4118A
PN4119A

Top View
SST4117 (T7)*
SST4118 (T8)*
SST4119 (T9)*
*Marking Code for TO-236

For applications information see AN105.
Document Number: 70239
S-41231—Rev. G, 28-Jun-04

www.vishay.com

1

2N/PN/SST4117A Series
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Lead Temperature (1/16” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C
Power Dissipation (case 25_C) :
(2N Prefix)a . . . . . . . . . . . . . . . . . . . . . . 300 mW
(PN, SST Prefix)b . . . . . . . . . . . . . . . . 350 mW

Gate-Source/Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40V
Forward Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Storage Temperature :

(2N Prefix) . . . . . . . . . . . . . . . . . . . −65 to 175_C
(PN, SST Prefix) . . . . . . . . . . . . . −55 to 150_C

Operating Junction Temperature :
(2N Prefix) . . . . . . . . . . . . . . . . . . . −55 to 175_C
(PN, SST Prefix) . . . . . . . . . . . . . −55 to 150_C

Notes
a. Derate 2 mW/_C above 25_C
b. Derate 2.8 mW/_C above 25_C

SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
4117

Parameter

4118

4119

Symbol

Test Conditions

Typa

Min

V(BR)GSS

IG = −1 mA , VDS = 0 V

−70

−40

VGS(off)

VDS = 10 V, ID = 1 nA

−0.6

−1.8

−1

−3

−2

−6

VDS = 10 V, VGS = 0 V

30

90

80

240

200

600

mA

Max

Min

Max

Min

Max

Unit

Static
Gate-Source
Breakdown Voltage
Gate-Source Cutoff Voltage
Saturation Drain Current

IDSS

VGS = −20 V
VDS = 0 V

G t Reverse
Gate
R
Current
C
t

IGSS

VGS = −10 V
VDS = 0 V
TA = 100_C
Gate Operating Currentb

−40

V

−0.2

−1

−1

−1

pA

−0.4

−2.5

−2.5

−2.5

nA

2N

VGS = −20 V
VDS = 0 V
TA = 150_C
VGS = −10 V
VDS = 0 V

−40

PN

−0.2

−1

−1

−1

SST

−0.2

−10

−10

−10

PN/SST

−0.03

−2.5

−2.5

−2.5

IG

VDG = 15 V, ID = 30 mA

−0.2

Drain Cutoff Currentb

ID(off)

VDS = 10 V, VGS = −8 V

0.2

Gate-Source Forward Voltageb

VGS(F)

IG = 1 mA , VDS = 0 V

0.7

pA
nA

pA
V

Dynamic
Common-Source
Forward Transconductance

gfs

Common-Source
Output Conductance

gos

Common-Source
Input Capacitance

Ciss
i

Common-Source
Reverse Transfer Capacitance

Crss

Equivalent Input Noise Voltageb

en

VDS = 10 V
VGS = 0 V
f = 1 MHz

2N/PN

1.2

SST

1.2

2N/PN

0.3

SST

0.3

VDS = 10 V, VGS = 0 V
f = 1 kHz

Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
b. This parameter not registered with JEDEC.

www.vishay.com

2

70

VDS = 10 V, VGS = 0 V
f = 1 kHz

15

210

80

250

100

330

3

5

10

3

3

3

1.5

1.5

1.5

mS

pF

nV⁄
√Hz
NT

Document Number: 70239
S-41231—Rev. G, 28-Jun-04

2N/PN/SST4117A Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage

300

800

240

180

600
gfs

120

400
IDSS
200

60

−1

−2
−3
−4
VGS(off) − Gate-Source Cutoff Voltage (V)

15

0.1 pA

200

3

6

2

rDS @ ID = 10 mA, VGS = 0 V
gos @ VDS = 10 V, VGS = 0 V
f = 1 kHz

1

0

gos − Output Conductance (µS)

4

0
−1

−2

IGSS @ 25_C

6

30

Common-Source Forward Transconductance
vs. Drain Current

−3

−4

160
TA = −55_C
120

25_C
125_C

80

40

VDS = 10 V
f = 1 kHz

0

−5

0.01

0.1

VGS(off) − Gate-Source Cutoff Voltage (V)

1

ID − Drain Current (mA)

Output Characteristics

Output Characteristics

100

500
VGS(off) = −0.7 V

VGS(off) = −2.5 V

80

400

VGS = 0 V
ID − Drain Current (µA)

ID − Drain Current (µA)

12
18
24
VDG − Drain-Gate Voltage (V)

VGS(off) = −2.5 V

9

0

10 mA

TA = 25_C

5

rDS

3

100 mA

0

gos
12

IGSS @ 125_C

10 pA

−5

On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage

10 mA

TA = 125_C

1 pA

gfs − Forward Transconductance (µS)

0

rDS(on) − Drain-Source On-Resistance (kW)

100 pA

0

0

100 mA

VGS(off) = −2.5 V

IG − Gate Leakage

IDSS @ VDS = 10 V, VGS = 0 V
gfs @ VDS = 10 V, VGS = 0 V
f = 1 kHz

Gate Leakage Current

1 nA
gfs − Forward Transconductance (µS)

IDSS − Saturation Drain Current (µA)

1000

−0.1 V

60

−0.2 V
40

−0.3 V
−0.4 V

20

−0.5 V

VGS = 0 V
300
−0.5 V
200
−1.0 V
100

−1.5 V
−2.0 V

0

0
0

4

8

12

VDS − Drain-Source Voltage (V)
Document Number: 70239
S-41231—Rev. G, 28-Jun-04

16

20

0

4

8

12

16

20

VDS − Drain-Source Voltage (V)
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3

2N/PN/SST4117A Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Transfer Characteristics

100

VDS = 10 V

VGS(off) = −0.7 V
gfs − Forward Transconductance (µS)

VGS(off) = −0.7 V

ID − Drain Current (µA)

80

60
TA = 125_C
40

25_C

20
−55_C
0

160

−0.2
−0.4
−0.8
−0.6
VGS − Gate-Source Voltage (V)

TA = −55_C
25_C

120

80

125_C

40

−1.0

0

Transfer Characteristics
VGS(off) = −2.5 V

VDS = 10 V

400
TA = −55_C

300

25_C

200

100

125_C

0

−1.0

VGS(off) = −2.5 V

VDS = 10 V
f = 1 kHz

240
TA = −55_C
180

25_C

120
125_C
60

0
0

−1

−2

−3

−4

−5

0

−1

−2

−3

−4

VGS − Gate-Source Voltage (V)

VGS − Gate-Source Voltage (V)

Circuit Voltage Gain vs. Drain Current

Common-Source Input Capacitance
vs. Gate-Source Voltage

−5

2.0

100
g fs R L

f = 1 MHz

AV + 1 ) R g
L os
Assume VDD = 15 V, VDS = 5 V
RL +

60

1.6
Ciss − Input Capacitance (pF)

80
AV − Voltage Gain

−0.2
−0.4
−0.6
−0.8
VGS − Gate-Source Voltage (V)

Transconductance vs. Gate-Source Voltage

300
gfs − Forward Transconductance (µS)

500

10 V
ID

VGS(off) = −0.7 V

40

20

−2.5 V

VDS = 0 V

1.2

10 V

0.8

0.4

0

0
0.01

0.1
ID − Drain Current (mA)

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4

VDS = 10 V
f = 1 kHz

0
0

ID − Drain Current (µA)

Transconductance vs. Gate-Source Voltage

200

1

0

−4

−8

−12

−16

−20

VGS − Gate-Source Voltage (V)
Document Number: 70239
S-41231—Rev. G, 28-Jun-04

2N/PN/SST4117A Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Common-Source Reverse Feedback Capacitance
vs. Gate-Source Voltage

0.5

200

Equivalent Input Noise Voltage vs. Frequency
VDS = 10 V

0.4
Hz

160

0.3

en − Noise Voltage nV /

Crss − Reverse Feedback Capacitance (pF)

f = 1 MHz

VDS = 0 V

0.2

10 V

0.1

ID = 10 mA

120

80
VGS = 0 V

40

0

0
0

−4

−8

−12

−16

−20

100 k
10

100

VGS − Gate-Source Voltage (V)

On-Resistance vs. Drain Current
20
rDS(on) − Drain-Source On-Resistance ( Ω )

gos − Output Conductance (µS)

VGS(off) = −2.5 V
TA = −55_C

25_C

1

10 k

f − Frequency (Hz)

Output Conductance vs. Drain Current

2

1k

125_C
VDS = 10 V
f = 1 kHz

VGS(off) = −0.7 V

16

12

8
−2.5 V
4
TA = 25_C
0

0
0.01

0.1
ID − Drain Current (mA)

Document Number: 70239
S-41231—Rev. G, 28-Jun-04

1

0.01

0.1

1

ID − Drain Current (mA)

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Title                           : 2N4117A, 2N4118A, 2N4119A, PN4117A, PN4118A, PN4119A, SST4117, SST4118, SST4119 - Datasheet. www.s-manuals.com.
Subject                         : 2N4117A, 2N4118A, 2N4119A, PN4117A, PN4118A, PN4119A, SST4117, SST4118, SST4119 - Datasheet. www.s-manuals.com.
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Page Count                      : 6
Keywords                        : 2N4117A, 2N4118A, 2N4119A, PN4117A, PN4118A, PN4119A, SST4117, SST4118, SST4119 - Datasheet. www.s-manuals.com.
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