2N4391, 2N4392, 2N4393, PN4391, PN4392, PN4393, SST4391, SST4392, SST4393 Datasheet. Www.s Manuals.com. Vishay

User Manual: Marking of electronic components, SMD Codes CA, CA*, CA**, CA***, CA-***, CA=***, CAW, Ca. Datasheets 74AHCT1G00GW, BCX68, BD48E51G, BD48K51G, MAX6314US38D1-T, MMBZ4691-V, MMBZ5257B, RP130Q301A, RT8010PQV, RT9011-SFGJ6, RT9271GE, RT9271PE, SST4391, SY7208, Si1912EDH, TPS61041DRV.

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2N/PN/SST4391 Series
Vishay Siliconix

N-Channel JFETs
2N4391

PN4391

SST4391

2N4392

PN4392

SST4392

2N4393

PN4393

SST4393

PRODUCT SUMMARY
Part Number

VGS(off) (V)

rDS(on) Max (
)

ID(off) Typ (pA)

tON Typ (ns)

2N/PN/SST4391

–4 to –10

30

5

4

2N/PN/SST4392

–2 to –5

60

5

4

2N/PN/SST4393

–0.5 to –3

100

5

4

FEATURES

BENEFITS

APPLICATIONS

D Low On-Resistance: 4391<30 

D Fast Switching—tON: 4 ns
D High Off-Isolation: ID(off) with Low
Leakage
D Low Capacitance: < 3.5 pF
D Low Insertion Loss

D
D
D
D
D

D
D
D
D
D
D

Low Error Voltage
High-Speed Analog Circuit Performance
Negligible “Off-Error,” Excellent Accuracy
Good Frequency Response, Low Glitches
Eliminates Additional Buffering

Analog Switches
Choppers
Sample-and-Hold
Normally “On” Switches
Current Limiters
Commutators

DESCRIPTION
The 2N/PN/SST4391 series features many of the superior
characteristics of JFETs which make it a good choice for
demanding analog switching applications and for specialized
amplifier circuits.

TO-206AA
(TO-18)

The 2N series hermetically-sealed TO-206AA (TO-18) can is
available with processing per MIL-S-19500 (see Military
Information). Both the PN, TO-226AA (TO-92), and SST,
TO-236 (SOT-23), series are available in tape-and-reel for
automated assembly (see Packaging Information). For similar
dual products, see the 2N5564/5565/5566 data sheet.

TO-226AA
(TO-92)

S

D

1

S

2

1

TO-236
(SOT-23)

D

3
S

2

3

D

G

1
G

2

3

G and Case
Top View

Top View

Top View

2N4391
2N4392
2N4393

PN4391
PN4392
PN4393

SST4391 (CA)*
SST4392 (CB)*
SST4393 (CC)*
*Marking Code for TO-236

For applications information see AN104 and AN106
.
Document Number: 70241
S-04028—Rev. F, 04-Jan-01

www.vishay.com

7-1

2N/PN/SST4391 Series
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS

Gate-Drain, Gate-Source Voltage:
(2N/PN Prefixes) . . . . . . . . . . . . . . . . . . . –40 V
(SST Prefix) . . . . . . . . . . . . . . . . . . . . . . . –35 V

Operating Junction Temperature :
(2N Prefix) . . . . . . . . . . . . . . . . . . –55 to 200 _C
(PN/SST Prefixes) . . . . . . . . . . . –55 to 150 _C

Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA

Power Dissipation :

Lead Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 _C
Storage Temperature :

(2N Prefix)a . . . . . . . . . . (TC = 25_C) 1800 mW
(PN/SST Prefixes)b . . . . . . . . . . . . . . . 350 mW

Notes
a. Derate 10 mW/_C above 25_C
b. Derate 2.8 mW/_C above 25_C

(2N Prefix) . . . . . . . . . . . . . . . . . . –65 to 200 _C
(PN/SST Prefixes) . . . . . . . . . . . –55 to 150 _C

SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
4391

Parameter

Symbol

Test Conditions

Typa

V(BR)GSS

IG = –1 A, VDS = 0 V

–55

Min

–40

4392

Max

Min

4393

Max

Min

Max

Unit

Static
Gate-Source
Breakdown Voltage
Gate-Source
Cutoff Voltage
Saturation Drain
Currentb

VGS(off)

IDSS

VDS = 20 V

2N/PN: ID = 1 nA

VDS = 15 V

SST: ID = 10 nA

VDS = 20 V, VGS = 0 V

VGS = –20 V
VDS = 0 V
Gate Reverse Current

Gate Operating Current

IGSS

IG

ID(off)
VDS = 20 V
TA = 150_C

VDS = 20 V
TA = 100_C
VDS = 10 V
TA = 125_C
Drain-Source
On-Voltage

VDS(on)

VGS = 0 V

–2

–5

–0.5

–3

50

150

25

75

5

30

50

150

25

100

5

60

SST

50

25

2N/SST

–5

–100

–100

–100

PN

–5

–1000

–1000

–1000

–13

–200

–200

–200

–1

–200

–200

–200

SST: TA = 125_C

–3

5

2N: VGS = –7 V

5
5

PN: VGS = –5 V

0.005

PN: VGS = –7 V

0.005

PN: VGS = –12 V

0.005

1

5

100

2N: VGS = –5 V

13

2N: VGS = –7 V

13

2N: VGS = –12 V

13

PN: VGS = –5 V

1

PN: VGS = –7 V

1

PN: VGS = –12 V

1

SST: VGS = –10 V

3

ID = 3 mA

0.25

ID = 6 mA

0.3

ID = 12 mA

0.35

VGS(F)

IG = 1 mA
VDS = 0 V

nA

100

2N

0.7

PN/SST

0.7

pA

100

2N: VGS = –12 V

Gate-Source
Forward Voltage

pA

–5

2N: VGS = –5 V

VGS = 0 V, ID = 1 mA

mA

5

2N: TA = 150_C

rDS(on)

7-2

–10

PN: TA = 100_C

Drain-Source
On-Resistance

www.vishay.com

V
–4

2N

SST VDS = 10 V, VGS = –10 V
Drain Cutoff Current

–40

PN

VDG = 15 V, ID = 10 mA

VDS = 20 V

–40

100
1
1

100

nA

100

pA

200
200
200
200

nA

200
200

0.4
0.4

V

0.4
30

60

100

1

1

1



V

Document Number: 70241
S-04028—Rev. F, 04-Jan-01

2N/PN/SST4391 Series
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
4391

Parameter

Symbol

Typa

Test Conditions

Min

4392

Max

Min

4393

Max

Min

Max

Unit

Dynamic
Common-Source
Forward Transconductance
Common-Source
Output Conductance
Drain-Source
On-Resistance
Common-Source
Input Capacitance

Common-Source
Reverse Transfer
Capacitance

Equivalent Input
Noise Voltage

gfs

6

mS

25

S

VDS = 20 V, ID = 1 mA, f = 1 kHz
gos
rDS(on)

Ciss

Crss

en

VGS = 0 V, ID = 0 mA , f = 1 kHz

VDS = 20 V, VGS = 0 V
f = 1 MHz

VDS = 0 V
f = 1 MHz

30

60

100

2N

12

14

14

14

PN

12

16

16

16

SST

13

2N: VGS = –5 V

3.3

2N: VGS = –7 V

3.2

2N: VGS = –12 V

2.8

PN: VGS = –5 V

3.5

PN: VGS = –7 V

3.4

PN: VGS = –12 V

3.0

SST: VGS = –5 V

3.6

SST: VGS = –7 V

3.5

SST: VGS = –12 V

3.1

VDS = 10 V, ID = 10 mA
f = 1 kHz




3.5
3.5
3.5
5

pF

5
5

nV⁄
√Hz

3

Switching
td(on)
Turn-On Time
tr
td(off)
Turn-Off Time
tf

VDD = 10 V
VGS(H) = 0 V
See Switching Circuit

2N/PN

2

SST

2

2N/PN

2

SST

2

2N/PN

6

SST

6

2N/PN

13

SST

13

Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
b. Pulse test: PW v300 s duty cycle v3%.

Document Number: 70241
S-04028—Rev. F, 04-Jan-01

15

15

15

5

5

5

20

35

50

15

20

30

ns

NCB

www.vishay.com

7-3

2N/PN/SST4391 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)

On-Resistance and Drain Current
vs. Gate-Source Cutoff Voltage

80

160
IDSS

rDS

60

120

40

80

20

40

0

rDS(on) – Drain-Source On-Resistance ( Ω )

rDS @ ID = 1 mA, VGS = 0 V
IDSS @ VDS = 20 V, VGS = 0 V

TA = 25_C
80
VGS(off) = –2 V
60

40

–4 V
–8 V

20

0

0
–2
–4
–6
–8
VGS(off) – Gate-Source Cutoff Voltage (V)

0

On-Resistance vs. Drain Current

100

200
IDSS – Saturation Drain Current (mA)

rDS(on) – Drain-Source On-Resistance ( Ω )

100

–10

1

10
ID – Drain Current (mA)

Turn-On Switching

On-Resistance vs. Temperature
5

tr approximately independent of ID
VDD = 5 V, RG = 50 W
VGS(L) = –10 V

ID = 1 mA
rDS changes X 0.7%/_C
160

4
tr
Switching Time (ns)

rDS(on) – Drain-Source On-Resistance ( Ω )

200

120
VGS(off) = –2 V
80
–4 V
–8 V

40

0
–55 –35

3
td(on) @
ID = 12 mA
2
td(on) @
ID = 3 mA

1

0
–15

5
65
25 45
TA – Temperature (_C)

85

105

0

125

Turn-Off Switching

30

–10

f = 1 MHz
VDS = 0 V
24

18

Capacitance (pF)

24
Switching Time (ns)

–2
–4
–6
–8
VGS(off) – Gate-Source Cutoff Voltage (V)

Capacitance vs. Gate-Source Voltage

30

td(off) independent of device VGS(off)
VDD = 5 V, VGS(L) = –10 V

VGS(off) = –2 V
tf

12

18

12

td(off)

Ciss
6

6
VGS(off) = –8 V

Crss
0

0
0

www.vishay.com

7-4

100

2

4
6
ID – Drain Current (mA)

8

10

0

–4
–8
–12
–16
VGS – Gate-Source Voltage (V)

–20

Document Number: 70241
S-04028—Rev. F, 04-Jan-01

2N/PN/SST4391 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Forward Transconductance and Output onductance
vs. Gate-Source Cutoff Voltage*

Noise Voltage vs. Frequency
100

50

500
gfs and gos @ VDS = 20 V
VGS = 0 V, f = 1 kHz

Hz
en – Noise Voltage nV /

10
ID = 1 mA

ID = 10 mA

1
10

100

1k
f – Frequency (Hz)

10 k

40

400

gfs

30

200

10

100

0

VDG = 10 V
ID = 10 mA
TA = 25_C

ID = 10 mA

1 mA
10 pA

10 mA

0

10

1 mA

100 pA

–10

gig

big

(mS)

IG – Gate Leakage)

1 nA

–4
–6
–8
VGS(off) – Gate-Source Cutoff Voltage (V)

100

IGSS @ 125_C
TA = 125_C

–2

Common-Gate Input Admittance

Gate Leakage Current
10 nA

200

20

0

100 k

gos

gos – Output Conductance (µS)

gfs – Forward Transconductance (mS)

VDS = 10 V

IGSS @ 25_C

1

TA = 25_C
1 pA
IG(on) @ ID
0.1 pA

0.1
0

6

12
18
24
VDG – Drain-Gate Voltage (V)

100

30

Common-Gate Forward Admittance
100

VDG = 10 V
ID = 10 mA
TA = 25_C

bfg
1.0

10
(mS)

gfg

(mS)

1000

Common-Gate Reverse Admittance
10

VDG = 10 V
ID = 10 mA
TA = 25_C
–gfg

200
500
f – Frequency (MHz)

–brg

–grg

+grg

0.1

1

0.01

0.1
100

Document Number: 70241
S-04028—Rev. F, 04-Jan-01

200
500
f – Frequency (MHz)

1000

100

200
500
f – Frequency (MHz)

1000

www.vishay.com

7-5

2N/PN/SST4391 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Transconductance vs. Drain Current

Common-Gate Output Admittance

100

100

VGS(off) = –2 V
gfs – Forward Transconductance (mS)

VDG = 10 V
ID = 10 mA
TA = 25_C
bog

(mS)

10
gog

1

0.1

TA = –55_C
25_C
10

125_C

1
100

200

500

0.1

1000

1.0

10

ID – Drain Current (mA)

f – Frequency (MHz)

Output Characteristics

Transfer Characteristics

100

100
VGS(off) = –4 V

VGS(off) = –4 V

VDS = 20 V

80
ID – Drain Current (mA)

80
ID – Drain Current (mA)

VDS = 10 V
f = 1 kHz

VGS = 0 V

60

–0.5 V
40

–1.0 V
–1.5 V

20

TA = –55_C
60
25_C
40

20

–2.0 V

125_C
–2.5 V
0

0
0

2

4

6

10

8

0

–1

VDS – Drain-Source Voltage (V)

–2

–3

–4

–5

VGS – Gate-Source Voltage (V)

VDD

RL

SWITCHING TIME TEST CIRCUIT
4391

OUT

4392

4393

VGS(L)

–12 V

–7 V

–5 V

RL*

800 


1600 


3000 


ID(on)

12 mA

6 mA

3 mA

VGS(H)
VGS(L)
1 kΩ

51 Ω

*Non-inductive

INPUT PULSE

SAMPLING SCOPE

Rise Time < 1 ns
Fall Time < 1 ns
Pulse Width 100 ns
PRF 1 MHz

Rise Time 0.4 ns
Input Resistance 10 M

Input Capacitance 1.5 pF

VIN
Scope

51 Ω

See Typical Characteristics curves for changes.
www.vishay.com

7-6

Document Number: 70241
S-04028—Rev. F, 04-Jan-01

www.s-manuals.com



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Title                           : 2N4391, 2N4392, 2N4393, PN4391, PN4392, PN4393, SST4391, SST4392, SST4393 - Datasheet. www.s-manuals.com.
Description                     : 
Creator                         : 
Subject                         : 2N4391, 2N4392, 2N4393, PN4391, PN4392, PN4393, SST4391, SST4392, SST4393 - Datasheet. www.s-manuals.com.
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Page Count                      : 7
Keywords                        : 2N4391, 2N4392, 2N4393, PN4391, PN4392, PN4393, SST4391, SST4392, SST4393 - Datasheet. www.s-manuals.com.

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