2N4391, 2N4392, 2N4393, PN4391, PN4392, PN4393, SST4391, SST4392, SST4393 Datasheet. Www.s Manuals.com. Vishay

User Manual: Marking of electronic components, SMD Codes CA, CA*, CA**, CA***, CA-***, CA=***, CAW, Ca. Datasheets 74AHCT1G00GW, BCX68, BD48E51G, BD48K51G, MAX6314US38D1-T, MMBZ4691-V, MMBZ5257B, RP130Q301A, RT8010PQV, RT9011-SFGJ6, RT9271GE, RT9271PE, SST4391, SY7208, Si1912EDH, TPS61041DRV.

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2N/PN/SST4391 Series

Vishay Siliconix

Document Number: 70241

S-04028—Rev. F, 04-Jan-01 www.vishay.com

7-1

N-Channel JFETs

2N4391 PN4391 SST4391

2N4392 PN4392 SST4392

2N4393 PN4393 SST4393

PRODUCT SUMMARY

Part Number VGS(off) (V) rDS(on) Max ()ID(off) Typ (pA) tON Typ (ns)

2N/PN/SST4391 –4 to –10 30 5 4

2N/PN/SST4392 –2 to –5 60 5 4

2N/PN/SST4393 –0.5 to –3 100 5 4

FEATURES BENEFITS APPLICATIONS

DLow On-Resistance: 4391<30 

DFast Switching—tON: 4 ns

DHigh Off-Isolation: ID(off) with Low

Leakage

DLow Capacitance: < 3.5 pF

DLow Insertion Loss

DLow Error Voltage

DHigh-Speed Analog Circuit Performance

DNegligible “Off-Error,” Excellent Accuracy

DGood Frequency Response, Low Glitches

DEliminates Additional Buffering

DAnalog Switches

DChoppers

DSample-and-Hold

DNormally “On” Switches

DCurrent Limiters

DCommutators

DESCRIPTION

The 2N/PN/SST4391 series features many of the superior

characteristics of JFETs which make it a good choice for

demanding analog switching applications and for specialized

amplifier circuits.

The 2N series hermetically-sealed TO-206AA (TO-18) can is

available with processing per MIL-S-19500 (see Military

Information). Both the PN, TO-226AA (TO-92), and SST,

TO-236 (SOT-23), series are available in tape-and-reel for

automated assembly (see Packaging Information). For similar

dual products, see the 2N5564/5565/5566 data sheet.

D

S

G and Case

TO-206AA

(TO-18)

Top View

2N4391

2N4392

2N4393

1

23

TO-226AA

(TO-92)

Top View

PN4391

PN4392

PN4393

D

G

S

1

2

3

D

S

G

TO-236

(SOT-23)

2

3

1

Top View

SST4391 (CA)*

SST4392 (CB)*

SST4393 (CC)*

*Marking Code for TO-236

For applications information see AN104 and AN106

.

2N/PN/SST4391 Series

Vishay Siliconix

www.vishay.com

7-2 Document Number: 70241

S-04028—Rev. F, 04-Jan-01

ABSOLUTE MAXIMUM RATINGS

Gate-Drain, Gate-Source Voltage:

(2N/PN Prefixes) –40 V. . . . . . . . . . . . . . . . . . .

(SST Prefix) –35 V. . . . . . . . . . . . . . . . . . . . . . .

Gate Current 50 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Lead Temperature 300 _C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Storage Temperature : (2N Prefix) –65 to 200 _C. . . . . . . . . . . . . . . . . .

(PN/SST Prefixes) –55 to 150 _C. . . . . . . . . . .

Operating Junction Temperature :

(2N Prefix) –55 to 200 _C. . . . . . . . . . . . . . . . . .

(PN/SST Prefixes) –55 to 150 _C. . . . . . . . . . .

Power Dissipation : (2N Prefix)a(TC = 25_C) 1800 mW. . . . . . . . . .

(PN/SST Prefixes)b350 mW. . . . . . . . . . . . . . .

Notes

a. Derate 10 mW/_C above 25_C

b. Derate 2.8 mW/_C above 25_C

SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)

Limits

4391 4392 4393

Parameter Symbol Test Conditions TypaMin Max Min Max Min Max Unit

Static

Gate-Source

Breakdown Voltage V(BR)GSS IG = –1 A, VDS = 0 V –55 –40 –40 –40

Gate-Source VDS = 20 V 2N/PN: ID = 1 nA V

Gate-Source

Cutoff Voltage VGS(off) VDS = 15 V SST: ID = 10 nA –4–10 –2–5–0.5 –3

2N 50 150 25 75 5 30

Saturation Drain

CurrentbIDSS VDS = 20 V, VGS = 0 V PN 50 150 25 100 5 60 mA

CurrentbDSS DS GS

SST 50 25 5

VGS = –20 V 2N/SST –5–100 –100 –100

VGS = –20 V

VDS = 0 V PN –5–1000 –1000 –1000 pA

Gate Reverse Current IGSS 2N: TA = 150_C–13 –200 –200 –200

GSS

PN: TA = 100_C–1–200 –200 –200 nA

SST: TA = 125_C–3

Gate Operating Current IGVDG = 15 V, ID = 10 mA –5

2N: VGS = –5 V 5 100

2N: VGS = –7 V 5 100 pA

2N: VGS = –12 V 5 100

VDS = 20 V PN: VGS = –5 V 0.005 1

PN: VGS = –7 V 0.005 1 nA

PN: VGS = –12 V 0.005 1

SST VDS = 10 V, VGS = –10 V 5 100 100 100 pA

Drain Cutoff Current ID(off) 2N: VGS = –5 V 13 200

VDS = 20 V

T = 150_C2N: VGS = –7 V 13 200

TA = 150

_

C2N: VGS = –12 V 13 200

PN: VGS = –5 V 1 200 nA

VDS = 20 V

T = 100_CPN: VGS = –7 V 1 200 nA

TA = 100

_

CPN: VGS = –12 V 1 200

VDS = 10 V

TA = 125_CSST: VGS = –10 V 3

ID = 3 mA 0.25 0.4

Drain-Source

On-Voltage VDS(on) VGS = 0 V ID = 6 mA 0.3 0.4 V

On-Voltage DS(on) GS

ID = 12 mA 0.35 0.4

Drain-Source

On-Resistance rDS(on) VGS = 0 V, ID = 1 mA 30 60 100 

Gate-Source IG = 1 mA 2N 0.7 1 1 1

Gate-Source

Forward Voltage VGS(F) IG = 1 mA

VDS = 0 V PN/SST 0.7 V

2N/PN/SST4391 Series

Vishay Siliconix

Document Number: 70241

S-04028—Rev. F, 04-Jan-01 www.vishay.com

7-3

SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)

Limits

4391 4392 4393

Parameter Symbol Test Conditions TypaMin Max Min Max Min Max Unit

Dynamic

Common-Source

Forward Transconductance gfs 6 mS

Common-Source

Output Conductance gos

VDS = 20 V, ID = 1 mA, f = 1 kHz

25 S

Drain-Source

On-Resistance rDS(on) VGS = 0 V, ID = 0 mA , f = 1 kHz 30 60 100 

2N 12 14 14 14

Common-Source

Input Capacitance Ciss VDS = 20 V, VGS = 0 V

f = 1 MHz PN 12 16 16 16

Input Capacitance iss f = 1 MHz SST 13

2N: VGS = –5 V 3.3 3.5

2N: VGS = –7 V 3.2 3.5

2N: VGS = –12 V 2.8 3.5

PN: VGS = –5 V 3.5 5 pF

Common-Source

Reverse Transfer Crss VDS = 0 V

f = 1 MHz PN: VGS = –7 V 3.4 5

Capacitance rss f = 1 MHz PN: VGS = –12 V 3.0 5

SST: VGS = –5 V 3.6

SST: VGS = –7 V 3.5

SST: VGS = –12 V 3.1

Equivalent Input

Noise Voltage enVDS = 10 V, ID = 10 mA

f = 1 kHz 3nV⁄

√Hz

Switching

2N/PN 2 15 15 15

td(on) SST 2

Turn-On Time 2N/PN 2 5 5 5

trVDD = 10 V SST 2

VGS(H) = 0 V

See Switching Circuit 2N/PN 6 20 35 50 ns

td(off) See Switching Circuit

SST 6

Turn-Off Time 2N/PN 13 15 20 30

tfSST 13

Notes

a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. NCB

b. Pulse test: PW v300 s duty cycle v3%.

2N/PN/SST4391 Series

Vishay Siliconix

www.vishay.com

7-4 Document Number: 70241

S-04028—Rev. F, 04-Jan-01

TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)

160

120

On-Resistance and Drain Current

vs. Gate-Source Cutoff Voltage On-Resistance vs. Drain Current

100

0–10

0

200

160

0

rDS IDSS

rDS @ ID = 1 mA, VGS = 0 V

IDSS @ VDS = 20 V, VGS = 0 V

100

0

1 10 100

On-Resistance vs. Temperature

200

–55 25 125

0–15 85

ID = 1 mA

rDS changes X 0.7%/_C

Turn-On Switching

5

0–10

4

3

2

1

0

Switching Time (ns)

td(on) @

ID = 3 mA

td(on) @

ID = 12 mA

tr approximately independent of ID

VDD = 5 V, RG = 50 W

VGS(L) = –10 V

Turn-Off Switching

30

010

24

18

12

6

0

VGS(off) = –2 V

VGS(off) = –8 V

td(off) independent of device VGS(off)

VDD = 5 V, VGS(L) = –10 V

Capacitance vs. Gate-Source Voltage

30

–20

24

18

12

6

0

Capacitance (pF)

f = 1 MHz

VDS = 0 V

0

VGS(off) – Gate-Source Cutoff Voltage (V)

TA – Temperature (_C)

VGS – Gate-Source Voltage (V)

VGS(off) – Gate-Source Cutoff Voltage (V)

ID – Drain Current (mA)

ID – Drain Current (mA)

80

60

40

20

80

40

80

60

40

20

–2–4–6–8

–35

120

80

40

5 45 65 105 –2–4–6–8

24 68 –4–8–12 –16

Switching Time (ns)

VGS(off) = –2 V

–4 V

–8 V

TA = 25_C

tr

VGS(off) = –2 V

–4 V

–8 V

td(off) Ciss

Crss

tf

rDS(on) – Drain-Source On-Resistance ( Ω )

rDS(on) – Drain-Source On-Resistance ( Ω )

rDS(on) – Drain-Source On-Resistance ( Ω )

IDSS – Saturation Drain Current (mA)

2N/PN/SST4391 Series

Vishay Siliconix

Document Number: 70241

S-04028—Rev. F, 04-Jan-01 www.vishay.com

7-5

TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)

Noise Voltage vs. Frequency

100

10

110 100 1 k 100 k10 k

VDS = 10 V

Forward Transconductance and Output onductance

vs. Gate-Source Cutoff Voltage*

50

0

0–2–10

500

200

0

gfs and gos @ VDS = 20 V

VGS = 0 V, f = 1 kHz

Gate Leakage Current

030

TA = 125_C

TA = 25_C

Common-Gate Input Admittance

100

10

1

0.1 100 1000200 500

(mS)

VDG = 10 V

ID = 10 mA

TA = 25_C

Common-Gate Forward Admittance Common-Gate Reverse Admittance

100

10

1

0.1100 1000200 500

(mS)

VDG = 10 V

ID = 10 mA

TA = 25_C

10

1.0

0.1

0.01

100 1000200 500

VDG = 10 V

ID = 10 mA

TA = 25_C

(mS)

VDG – Drain-Gate Voltage (V)

VGS(off) – Gate-Source Cutoff Voltage (V)f – Frequency (Hz)

f – Frequency (MHz)

f – Frequency (MHz) f – Frequency (MHz)

40

30

20

10

–4–6–8

IGSS @ 125_C

6 121824

400

200

100

0.1 pA

1 pA

10 pA

100 pA

1 nA

10 nA

ID = 1 mA

ID = 10 mA

gfs gos

1 mA

IGSS @ 25_C

ID = 10 mA gig

big

–gfg bfg

gfg

–grg

–brg

+grg

10 mA

IG(on) @ ID

1 mA

en – Noise Voltage nV / Hz

gos – Output Conductance (µS)

gfs – Forward Transconductance (mS)

IG – Gate Leakage)

51 Ω

51 Ω

1 kΩ

VIN

Scope

VDD

RL

OUT

VGS(H)

VGS(L)

2N/PN/SST4391 Series

Vishay Siliconix

www.vishay.com

7-6 Document Number: 70241

S-04028—Rev. F, 04-Jan-01

TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)

Common-Gate Output Admittance

100

10

1

0.1

100 1000200 500

(mS)

VDG = 10 V

ID = 10 mA

TA = 25_C

f – Frequency (MHz)

Transfer Characteristics

100

0–5

80

60

40

20

0

VGS – Gate-Source Voltage (V)

–1–2–3–4

VDS = 20 V

TA = –55_C

25_C

Transconductance vs. Drain Current

100

10

1

0.1 1.0 10

ID – Drain Current (mA)

VGS(off) = –2 V

Output Characteristics

100

010

80

60

40

20

0

VDS – Drain-Source Voltage (V)

2468

125_C

gog

bog

TA = –55_C

125_C

VGS = 0 V

–0.5 V

–1.0 V

–1.5 V

–2.0 V

–2.5 V

VGS(off) = –4 V

25_C

VDS = 10 V

f = 1 kHz

VGS(off) = –4 V

gfs – Forward Transconductance (mS)

ID – Drain Current (mA)

ID – Drain Current (mA)

SWITCHING TIME TEST CIRCUIT

4391 4392 4393

VGS(L) –12 V –7 V –5 V

RL*800 1600  3000 

ID(on) 12 mA 6 mA 3 mA

*Non-inductive

INPUT PULSE SAMPLING SCOPE

Rise Time < 1 ns

Fall Time < 1 ns

Pulse Width 100 ns

PRF 1 MHz

Rise Time 0.4 ns

Input Resistance 10 M

Input Capacitance 1.5 pF

See Typical Characteristics curves for changes.

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