2N5484, 2N5485, 2N5486, SST5484, SST5485, SST5486 Datasheet. Www.s Manuals.com. Vishay

User Manual: Marking of electronic components, SMD Codes H4, H4*, H4**, H4033, H40B**, H40D**, H414, H41B**, H41D**, H41E**, H42B**, H42D**. Datasheets BCW69R, BZX585-C8V2, EMH4, HM4033, HMC414MS8G, IMH4A, MMSZ5244, PZU3.6B2, R1162D181B5, R1162D181D5, R1162D281B5, R1162D281D5, R1162D281E5, R1162D401B, R1162D401D, RT9013-30GQW, SST5484, TC1189-QECT, UMH4N.

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2N/SST5484 Series
Vishay Siliconix

N-Channel JFETs
2N5484

SST5484

2N5485

SST5485

2N5486

SST5486

PRODUCT SUMMARY
Part Number

VGS(off) (V)

V(BR)GSS Min (V)

gfs Min (mS)

IDSS Min (mA)

2N/SST5484

−0.3 to −3

2N/SST5485

−0.5 to −4

−25

3

1

−25

3.5

2N/SST5486

−2 to −6

4

−25

4

8

FEATURES

BENEFITS

D Excellent High-Frequency Gain:
Gps 13 dB (typ) @ 400 MHz − 5485/6
D Very Low Noise: 2.5 dB (typ) @
400 MHz − 5485/6
D Very Low Distortion
D High AC/DC Switch Off-Isolation

D
D
D
D
D

APPLICATIONS

Wideband High Gain
Very High System Sensitivity
High Quality of Amplification
High-Speed Switching Capability
High Low-Level Signal Amplification

D
D
D
D

High-Frequency Amplifier/Mixer
Oscillator
Sample-and-Hold
Very Low Capacitance Switches

DESCRIPTION
The 2N/SST5484 series consists of n-channel JFETs
designed to provide high-performance amplification,
especially at high frequencies up to and beyond 400 MHz.

The 2N series, TO-226AA (TO-92), and SST series, TO-236
(SOT-23), packages provide low-cost options and are
available with tape-and-reel to support automated assembly
(see Packaging Information).

TO-236
(SOT-23
)

TO-226AA
(TO-92)
D

1

D

1

S

2

S

2

G

3

3

Top View
2N5484
2N5485
2N5486

G

Top View
SST5484 (H4)*
SST5485 (H5)*
SST5486 (H6)*
*Marking Code for TO-236

For applications information see AN102 and AN105.
Document Number: 70246
S-50148—Rev. G, 24-Jan-05

www.vishay.com

1

2N/SST5484 Series
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −25 V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA

Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to 150_C

Lead Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300_C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to 150_C

Notes
a. Derate 2.8 mW/_C above 25_C

Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW

SPECIFICATIONS FOR 2N SERIES (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
2N5484

Parameter

Symbol

Test Conditions

Typa

V(BR)GSS

IG = −1 
A , VDS = 0 V

−35

VGS(off)

VDS = 15 V, ID = 10 nA

Min

−25

Max

2N5485

Min

2N5486

Max

Min Max Unit

Static
Gate-Source
Breakdown Voltage
Gate-Source Cutoff Voltage
Saturation Drain Currentb
Gate Reverse Current
Gate Operating

IDSS
IGSS

Currentc

Gate-Source
Forward Voltagec

−0.3

VDS = 15 V, VGS = 0 V
VGS = −20 V, VDS = 0 V
TA = 100_C

1

−25

−25

V

−3

−0.5

−4

−2

−6

5

4

10

8

20

−0.002

−1

−1

−1

−0.2

−200

−200

−200

mA
nA

IG

VDG = 10 V, ID = 1 mA

−20

pA

VGS(F)

IG = 10 mA , VDS = 0 V

0.8

V

Dynamic
Common-Source
Forward TransconductanceNO TAG

gfs

Common-Source
Output ConductanceNO TAG

gos

Common-Source
Input Capacitance

Ciss

Common-Source
Reverse Transfer Capacitance

Crss

Common-Source
Output Capacitance

Coss

Equivalent Input
Noise Voltagec

en

3

VDS = 15 V, VGS = 0 V
f = 1 kHz

VDS = 15 V, VGS = 0 V
f = 1 MHz

VDS = 15 V, VGS = 0 V
f = 100 Hz

6

3.5

7

4

8

mS

S

50

60

75

2.2

5

5

5

0.7

1

1

1

1

2

2

2

pF

nV⁄
√Hz

10

High-Frequency
Common-Source
Transconductanced

Yfs(RE)
f (RE)

Common-Source
Output Conductanced

Yos(RE)
(RE)

Common-Source
Input Conductanced

Yis(RE)
i (RE)

C
Common-Source
S
Power
P

Noise Figure
g d

Gain
G i d

VDS = 15 V
VGS = 0 V

2

5.5

f = 400 MHz

5.5

f = 100 MHz

45

f = 400 MHz

65

f = 100 MHz

0.05

f = 400 MHz

0.8

VDS = 15 V, ID = 1 mA
f = 100 MHz
Gps

NF

VDS = 15 V
ID = 4 mA

20

2.5
3

mS

3.5

75
100

100

1

1

0.1

16


S
mS

25

f = 100 MHz

21

18

30

18

30

f = 400 MHz

13

10

20

10

20

VDS = 15 V, VGS = 0 V
RG = 1 M , f = 1 kHz

0.3

2.5

VDS = 15 V, ID = 1 mA
RG = 1 k , f = 100 MHz

2

3

VDS = 15 V
ID = 4 mA
RG = 1 k
www.vishay.com

f = 100 MHz

2.5

2.5

f = 100 MHz

1

2

2

f = 400 MHz

2.5

4

4

dB

Document Number: 70246
S-50148—Rev. G, 24-Jan-05

2N/SST5484 Series
Vishay Siliconix
SPECIFICATIONS FOR SST SERIES (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
SST5484

Parameter

Symbol

Test Conditions

Typb

V(BR)GSS

IG = −1 
A , VDS = 0 V

−35

VGS(off)

VDS = 15 V, ID = 10 nA

Min

−25

Max

SST5485

Min

Max

SST5486

Min

Max

Unit

Static
Gate-Source
Breakdown Voltage
Gate-Source Cutoff Voltage
Saturation Drain Currentb
Gate Reverse Current
Gate Operating Currentc
Gate-Source
Forward Voltagec

IDSS
IGSS

−0.3

VDS = 15 V, VGS = 0 V
VGS = −20 V, VDS = 0 V

1

−25

−25

V

−3

−0.5

−4

−2

−6

5

4

10

8

20

−0.002

−1

−1

−1

−0.2

−200

−200

−200

TA = 100_C

mA
nA

IG

VDG = 10 V, ID = 1 mA

−20

pA

VGS(F)

IG = 10 mA , VDS = 0 V

0.8

V

Dynamic
Common-Source
Forward TransconductanceNO TAG

gfs

Common-Source
Output ConductanceNO TAG

gos

Common-Source
Input Capacitance

Ciss

Common-Source
Reverse Transfer
Capacitance

Crss

Common-Source
Output Capacitance

Coss

Equivalent Input
Noise Voltagec

en

3

VDS = 15 V, VGS = 0 V
f = 1 kHz

6
50

3.5

7
60

4

8

mS

75


S

2.2
VDS = 15 V, VGS = 0 V
f = 1 MHz

0.7

pF

1
VDS = 15 V, VGS = 0 V
f = 100 Hz

10

nV⁄
√Hz

High-Frequency
Common-Source
Transconductance

Yfs
f

Common-Source
Output Conductance

Yos

Common-Source
Input Conductance

Yis
i

Common-Source
Power Gain

Noise Figure
g

VDS = 15 V
VGS = 0 V

f = 100 MHz

5.5

f = 400 MHz

5.5

f = 100 MHz

45

f = 400 MHz

65

f = 100 MHz

0.05

f = 400 MHz

0.8

VDS = 15 V, ID = 1 mA
f = 100 MHz
Gps

NF

VDS = 15 V
ID = 4 mA

f = 100 MHz

21

f = 400 MHz

13
0.3

VDS = 15 V, ID = 1 mA
RG = 1 k , f = 100 MHz

2

f = 100 MHz

1

f = 400 MHz

2.5

Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
b. Pulse test: PW v300 
s duty cycle v3%.
c. This parameter not registered with JEDEC.
d. Not a production test.


S
mS

20

VDS = 15 V, VGS = 0 V
RG = 1 M , f = 1 kHz

VDS = 15 V
ID = 4 mA
RG = 1 k

mS

dB

NH

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

Document Number: 70246
S-50148—Rev. G, 24-Jan-05

www.vishay.com

3

2N/SST5484 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage

10

6

gfs

12

4

8

IDSS @ VDS = 10 V, VGS = 0 V
gfs @ VDS = 10 V, VGS = 0 V
f = 1 kHz

4

2

0

0
0

−2
−4
−6
−8
VGS(off) − Gate-Source Cutoff Voltage (V)

IGSS @
125_C

ID = 5 mA
1 mA

10 pA

0.1 mA

TA = 25_C

1 pA

200

40

100

20

0
0

gfs − Forward Transconductance (mS)

TA = 125_C

100 pA

IGSS @ 25_C

0.1 pA

−2
−4
−6
−8
VGS(off) − Gate-Source Cutoff Voltage (V)

4

8
12
16
VDG − Drain-Gate Voltage (V)

Common-Source Forward
Transconductance vs. Drain Current

TA = −55_C

6
25_C

4

125_C
2

0.1

1
ID − Drain Current (mA)

Output Characteristics

10

Output Characteristics
15

VGS(off) = −2 V

VGS(off) = −3 V

8

12

VGS = 0 V

ID − Drain Current (mA)

ID − Drain Current (mA)

VDS = 10 V
f = 1 kHz

8

20

10

−0.2 V

6

−0.4 V
4

−0.6 V
−0.8 V
−1.0 V
−1.2 V

2

0

2

4

6

−1.4 V
8

VDS − Drain-Source Voltage (V)
www.vishay.com

4

−10

0
0

0

60
gos

VGS(off) = −3 V

0.1 mA
1 nA

rDS

300

10

1 mA

80

0

ID = 5 mA

10 nA

gos @ VDS = 10 V, VGS = 0 V
f = 1 kHz

400

−10

Gate Leakage Current

100 nA

IG − Gate Leakage

rDS(on) − Drain-Source On-Resistance ( Ω )

8

rDS @ ID = 300 
A, VGS = 0 V
gos − Output Conductance (µS)

IDSS

100

500
gfs − Forward Transconductance (mS)

IDSS − Saturation Drain Current (mA)

20

16

On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage

VGS = 0 V
−0.3 V

9

−0.6 V
−0.9 V

6

−1.2 V
−1.5 V

3

−1.8 V
10

0

0

2

4

6

8

10

VDS − Drain-Source Voltage (V)
Document Number: 70246
S-50148—Rev. G, 24-Jan-05

2N/SST5484 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Transfer Characteristics

Transfer Characteristics
10

10
VGS(off) = −2 V

VDS = 10 V

VGS(off) = −3 V
8

TA = −55_C

ID − Drain Current (mA)

ID − Drain Current (mA)

8

25_C

6

125_C

4

TA = −55_C
25_C

6

125_C

4

2

2

0

0
0

−0.4
−0.8
−1.2
−1.6
VGS − Gate-Source Voltage (V)

0

−2

Transconductance vs. Gate-Source Voltage
VGS(off) = −2 V

VDS = 10 V
f = 1 kHz

TA = −55_C
25_C

4

−1.2
−1.8
−2.4
VGS − Gate-Source Voltage (V)

−3

Transconductance vs. Gate-Source Voltage

8

6

−0.6

10
gfs − Forward Transconductance (mS)

gfs − Forward Transconductance (mS)

10

125_C

2

VGS(off) = −3 V

VDS = 10 V
f = 1 kHz

8
TA = −55_C
6

25_C

4

125_C

2

0

0
0

−0.4

−0.8

−1.2

−1.6

−2

0

VGS − Gate-Source Voltage (V)

−0.6

−1.2

−1.8

−2.4

−3

VGS − Gate-Source Voltage (V)

On-Resistance vs. Drain Current

Circuit Voltage Gain vs. Drain Current

300

100
g fs R L
AV + 1 ) R g
L os

TA = 25_C
240

80
VGS(off) = −2 V

AV − Voltage Gain

rDS(on) − Drain-Source On-Resistance ( Ω )

VDS = 10 V

180
−3 V
120

60

Assume VDD = 15 V, VDS = 5 V
RL +

60

40

10 V
ID

VGS(off) = −2 V

20
−3 V

0
0.1

Document Number: 70246
S-50148—Rev. G, 24-Jan-05

1
ID − Drain Current (mA)

10

0

0.1

1
ID − Drain Current (mA)

10

www.vishay.com

5

2N/SST5484 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Common-Source Input Capacitance
vs. Gate-Source Voltage

5

3
Crss − Reverse Feedback Capacitance (pF)

Ciss − Input Capacitance (pF)

f = 1 MHz
4

3

Common-Source Reverse Feedback
Capacitance vs. Gate-Source Voltage

VDS = 0 V

2
10 V
1

f = 1 MHz
2.4

1.8

VDS = 0 V

1.2
10 V

0.6

0

0
0

100

−4

−8
−12
−16
VGS − Gate-Source Voltage (V)

0

−20

Input Admittance
TA = 25_C
VDS = 15 V
VGS = 0 V
Common Source

10

gfs

(mS)

gis

1

−bfs
1

0.1
100

200

500

0.1
100

1000

f − Frequency (MHz)

TA = 25_C
VDS = 15 V
VGS = 0 V
Common Source

200

500

1000

f − Frequency (MHz)

Reverse Admittance
10

−20

TA = 25_C
VDS = 15 V
VGS = 0 V
Common Source

bis

(mS)

−8
−12
−16
VGS − Gate-Source Voltage (V)

Forward Admittance

100

10

−4

Output Admittance

10

TA = 25_C
VDS = 15 V
VGS = 0 V
Common Source

−brs

bos

1
(mS)

(mS)

1

−grs
0.1

0.1

0.01
100

www.vishay.com

6

gos

0.01
200
500
f − Frequency (MHz)

1000

100

200

500
f − Frequency (MHz)

1000

Document Number: 70246
S-50148—Rev. G, 24-Jan-05

2N/SST5484 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)

20

Equivalent Input Noise Voltage vs. Frequency
VDS = 10 V

VGS(off) = −3 V

16

gos − Output Conductance (µS)

en − Noise Voltage nV /

Hz

VGS(off) = −3 V

Output Conductance vs. Drain Current

20

12

8
ID = 5 mA

4

VDS = 10 V
f = 1 kHz

16
TA = −55_C
12
25_C

8
125_C
4

ID = IDSS
0

0
10

100

1k
f − Frequency (Hz)

10 k

100 k

0.1

1

10

ID − Drain Current (mA)

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg?70246.
Document Number: 70246
S-50148—Rev. G, 24-Jan-05

www.vishay.com

7

www.s-manuals.com



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Title                           : 2N5484, 2N5485, 2N5486, SST5484, SST5485, SST5486 - Datasheet. www.s-manuals.com.
Subject                         : 2N5484, 2N5485, 2N5486, SST5484, SST5485, SST5486 - Datasheet. www.s-manuals.com.
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Keywords                        : 2N5484, 2N5485, 2N5486, SST5484, SST5485, SST5486 - Datasheet. www.s-manuals.com.

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