2N5484, 2N5485, 2N5486, SST5484, SST5485, SST5486 Datasheet. Www.s Manuals.com. Vishay

User Manual: Marking of electronic components, SMD Codes H4, H4*, H4**, H4033, H40B**, H40D**, H414, H41B**, H41D**, H41E**, H42B**, H42D**. Datasheets BCW69R, BZX585-C8V2, EMH4, HM4033, HMC414MS8G, IMH4A, MMSZ5244, PZU3.6B2, R1162D181B5, R1162D181D5, R1162D281B5, R1162D281D5, R1162D281E5, R1162D401B, R1162D401D, RT9013-30GQW, SST5484, TC1189-QECT, UMH4N.

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2N/SST5484 Series

Vishay Siliconix

Document Number: 70246

S-50148—Rev. G, 24-Jan-05

www.vishay.com

1

N-Channel JFETs

2N5484 SST5484

2N5485 SST5485

2N5486 SST5486

PRODUCT SUMMARY

Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA)

2N/SST5484 −0.3 to −3−25 3 1

2N/SST5485 −0.5 to −4−25 3.5 4

2N/SST5486 −2 to −6−25 4 8

FEATURES BENEFITS APPLICATIONS

DExcellent High-Frequency Gain:

Gps 13 dB (typ) @ 400 MHz − 5485/6

DVery Low Noise: 2.5 dB (typ) @

400 MHz − 5485/6

DVery Low Distortion

DHigh AC/DC Switch Off-Isolation

DWideband High Gain

DVery High System Sensitivity

DHigh Quality of Amplification

DHigh-Speed Switching Capability

DHigh Low-Level Signal Amplification

DHigh-Frequency Amplifier/Mixer

DOscillator

DSample-and-Hold

DVery Low Capacitance Switches

DESCRIPTION

The 2N/SST5484 series consists of n-channel JFETs

designed to provide high-performance amplification,

especially at high frequencies up to and beyond 400 MHz.

The 2N series, TO-226AA (TO-92), and SST series, TO-236

(SOT-23), packages provide low-cost options and are

available with tape-and-reel to support automated assembly

(see Packaging Information).

D

S

G

TO-236

(SOT-23

)

2

3

1

Top View

SST5484 (H4)*

SST5485 (H5)*

SST5486 (H6)*

*Marking Code for TO-236

D

S

G

TO-226AA

(TO-92)

Top View

2N5484

2N5485

2N5486

1

2

3

For applications information see AN102 and AN105.

2N/SST5484 Series

Vishay Siliconix

www.vishay.com

2

Document Number: 70246

S-50148—Rev. G, 24-Jan-05

ABSOLUTE MAXIMUM RATINGS

Gate-Drain, Gate-Source Voltage −25 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Gate Current 10 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Lead Temperature 300_C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Storage Temperature −65 to 150_C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Junction Temperature −55 to 150_C. . . . . . . . . . . . . . . . . . . . . . . . . .

Power Dissipationa350 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Notes

a. Derate 2.8 mW/_C above 25_C

SPECIFICATIONS FOR 2N SERIES (TA = 25_C UNLESS OTHERWISE NOTED)

Limits

2N5484 2N5485 2N5486

Parameter Symbol Test Conditions TypaMin Max Min Max Min Max Unit

Static

Gate-Source

Breakdown Voltage V(BR)GSS IG = −1 A , VDS = 0 V −35 −25 −25 −25

V

Gate-Source Cutoff Voltage VGS(off) VDS = 15 V, ID = 10 nA −0.3 −3−0.5 −4−2−6

V

Saturation Drain CurrentbIDSS VDS = 15 V, VGS = 0 V 1 5 4 10 8 20 mA

Gate Reverse Current

IGSS

VGS = −20 V, VDS = 0 V −0.002 −1−1−1

nA

Gate Reverse Current IGSS TA = 100_C−0.2 −200 −200 −200 nA

Gate Operating CurrentcIGVDG = 10 V, ID = 1 mA −20 pA

Gate-Source

Forward VoltagecVGS(F) IG = 10 mA , VDS = 0 V 0.8 V

Dynamic

Common-Source

Forward TransconductanceNO TAG gfs VDS = 15 V, VGS = 0 V

3 6 3.5 7 4 8 mS

Common-Source

Output ConductanceNO TAG gos

VDS = 15 V

,

VGS = 0 V

f = 1 kHz 50 60 75 S

Common-Source

Input Capacitance Ciss 2.2 5 5 5

Common-Source

Reverse Transfer Capacitance Crss VDS = 15 V, VGS = 0 V

f = 1 MHz 0.7 1 1 1 pF

Common-Source

Output Capacitance Coss 1 2 2 2

Equivalent Input

Noise VoltagecenVDS = 15 V, VGS = 0 V

f = 100 Hz 10 nV⁄

√Hz

High-Frequency

Common-Source

d

Yf(RE)

f = 100 MHz 5.5 2.5

mS

Common-Source

TransconductancedYfs(RE) f = 400 MHz 5.5 3 3.5 mS

Common-Source

d

Y(RE)

VDS = 15 V f = 100 MHz 45 75

S

Common-Source

Output ConductancedYos(RE)

VDS = 15 V

VGS = 0 V f = 400 MHz 65 100 100 S

Common-Source

d

Yi(RE)

f = 100 MHz 0.05 0.1

mS

Common-Source

Input ConductancedYis(RE) f = 400 MHz 0.8 1 1 mS

CS P Gi

d

G

VDS = 15 V, ID = 1 mA

f = 100 MHz 20 16 25

Common-Source Power GaindGps VDS = 15 V f = 100 MHz 21 18 30 18 30

VDS = 15 V

ID = 4 mA f = 400 MHz 13 10 20 10 20

VDS = 15 V, VGS = 0 V

RG = 1 M , f = 1 kHz 0.3 2.5 2.5 2.5 dB

Noise FiguredNF

VDS = 15 V, ID = 1 mA

RG = 1 k , f = 100 MHz 2 3

g

VDS = 15 V

ID = 4 mA

f = 100 MHz 1 2 2

I

D

=

4

m

A

RG = 1 kf = 400 MHz 2.5 4 4

2N/SST5484 Series

Vishay Siliconix

Document Number: 70246

S-50148—Rev. G, 24-Jan-05

www.vishay.com

3

SPECIFICATIONS FOR SST SERIES (TA = 25_C UNLESS OTHERWISE NOTED)

Limits

SST5484 SST5485 SST5486

Parameter Symbol Test Conditions TypbMin Max Min Max Min Max Unit

Static

Gate-Source

Breakdown Voltage V(BR)GSS IG = −1 A , VDS = 0 V −35 −25 −25 −25

V

Gate-Source Cutoff Voltage VGS(off) VDS = 15 V, ID = 10 nA −0.3 −3−0.5 −4−2−6

V

Saturation Drain CurrentbIDSS VDS = 15 V, VGS = 0 V 1 5 410 8 20 mA

Gate Reverse Current

IGSS

VGS = −20 V, VDS = 0 V −0.002 −1−1−1

nA

Gate Reverse Current IGSS TA = 100_C−0.2 −200 −200 −200 nA

Gate Operating CurrentcIGVDG = 10 V, ID = 1 mA −20 pA

Gate-Source

Forward VoltagecVGS(F) IG = 10 mA , VDS = 0 V 0.8 V

Dynamic

Common-Source

Forward TransconductanceNO TAG gfs VDS = 15 V, VGS = 0 V

3 6 3.5 7 4 8 mS

Common-Source

Output ConductanceNO TAG gos

VDS = 15 V

,

VGS = 0 V

f = 1 kHz 50 60 75 S

Common-Source

Input Capacitance Ciss 2.2

Common-Source

Reverse Transfer

Capacitance

Crss VDS = 15 V, VGS = 0 V

f = 1 MHz 0.7 pF

Common-Source

Output Capacitance Coss 1

Equivalent Input

Noise VoltagecenVDS = 15 V, VGS = 0 V

f = 100 Hz 10 nV⁄

√Hz

High-Frequency

Common-Source

Yf

f = 100 MHz 5.5

mS

Common-Source

Transconductance Yfs f = 400 MHz 5.5 mS

Common-Source

Y

VDS = 15 V f = 100 MHz 45

S

Common-Source

Output Conductance Yos

VDS = 15 V

VGS = 0 V f = 400 MHz 65 S

Common-Source

Yi

f = 100 MHz 0.05

mS

Common-Source

Input Conductance Yis f = 400 MHz 0.8 mS

Common

-

Source

G

VDS = 15 V, ID = 1 mA

f = 100 MHz 20

Common

-

So

u

rce

Power Gain Gps VDS = 15 V f = 100 MHz 21

VDS = 15 V

ID = 4 mA f = 400 MHz 13

VDS = 15 V, VGS = 0 V

RG = 1 M , f = 1 kHz 0.3 dB

Noise Figure NF

VDS = 15 V, ID = 1 mA

RG = 1 k , f = 100 MHz 2

g

VDS = 15 V

ID = 4 mA

f = 100 MHz 1

ID = 4 mA

RG = 1 kf = 400 MHz 2.5

Notes

a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. NH

b. Pulse test: PW v300 s duty cycle v3%.

c. This parameter not registered with JEDEC.

d. Not a production test.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

2N/SST5484 Series

Vishay Siliconix

www.vishay.com

4

Document Number: 70246

S-50148—Rev. G, 24-Jan-05

TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)

On-Resistance and Output Conductance

vs. Gate-Source Cutoff Voltage

rDS

gos

rDS @ ID = 300 A, VGS = 0 V

gos @ VDS = 10 V, VGS = 0 V

f = 1 kHz

Drain Current and Transconductance

vs. Gate-Source Cutoff Voltage

IDSS

gfs

IDSS @ VDS = 10 V, VGS = 0 V

gfs @ VDS = 10 V, VGS = 0 V

f = 1 kHz

VGS(off) − Gate-Source Cutoff Voltage (V)

VDG − Drain-Gate Voltage (V) ID − Drain Current (mA)

VDS − Drain-Source Voltage (V) VDS − Drain-Source Voltage (V)

Gate Leakage Current

0.1 mA

IGSS @ 25_C

TA = 25_C

TA = 125_C

IGSS @

125_C

Output Characteristics Output Characteristics

Common-Source Forward

Transconductance vs. Drain Current

0.1 1 10

10

8

0

VGS(off) = −3 V

TA = −55_C

25_C

125_C

−0.2 V

−0.4 V

−0.6 V

−0.8 V

−1.2 V

−1.0 V

VGS = 0 V

−0.6 V

−0.9 V

−1.2 V

−1.5 V

−1.8 V

VGS = 0 V

−0.3 V

10

8

0

6

4

2

20

0

16

12

8

4

0−10−2−4−6−8

100

80

0

60

40

20

500

0

400

300

200

100

0−10−2−4−6−8

012841620

0.1 pA

1 pA

10 pA

100 pA

1 nA

10 nA

100 nA

6

4

2

10

0

8

6

4

2

01024 68

15

0

12

9

6

3

01024 68

VGS(off) − Gate-Source Cutoff Voltage (V)

VDS = 10 V

f = 1 kHz

VGS(off) = −2 V VGS(off) = −3 V

ID = 5 mA

1 mA

0.1 mA

ID = 5 mA

1 mA

−1.4 V

gos − Output Conductance (µS)

rDS(on) − Drain-Source On-Resistance ( Ω )

gfs − Forward Transconductance (mS)

IDSS − Saturation Drain Current (mA)

gfs − Forward Transconductance (mS)

IG − Gate LeakageID − Drain Current (mA)

ID − Drain Current (mA)

2N/SST5484 Series

Vishay Siliconix

Document Number: 70246

S-50148—Rev. G, 24-Jan-05

www.vishay.com

5

TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)

VGS − Gate-Source Voltage (V) VGS − Gate-Source Voltage (V)

Transfer Characteristics

VGS(off) = −2 V

TA = −55_C

125_C

Transfer Characteristics

TA = −55_C

125_C

VGS(off) = −3 V

25_C

VGS − Gate-Source Voltage (V)

Transconductance vs. Gate-Source Voltage

VGS(off) = −2 V

TA = −55_C

125_C

25_C

VGS − Gate-Source Voltage (V)

Transconductance vs. Gate-Source Voltage

TA = −55_C

125_C

25_C

VGS(off) = −3 V

ID − Drain Current (mA) ID − Drain Current (mA)

On-Resistance vs. Drain Current Circuit Voltage Gain vs. Drain Current

0.1 1 10

TA = 25_C

−3 V

VGS(off) = −2 V

100.1

AV+

gfs RL

1)RLgos

Assume VDD = 15 V, VDS = 5 V

RL+

10 V

ID

VGS(off) = −2 V

−3 V

10

0

8

6

4

2

0−2−0.4 −0.8 −1.2 −1.6

300

0

240

180

120

60

10

0

8

6

4

2

0−3−0.6 −1.2 −1.8 −2.4

10

0

8

6

4

2

0−2−0.4 −0.8 −1.2 −1.6

10

0

8

6

4

2

0−3−0.6 −1.2 −1.8 −2.4

100

0

80

60

40

20

VDS = 10 V VDS = 10 V

VDS = 10 V

f = 1 kHz

VDS = 10 V

f = 1 kHz

1

25_C

rDS(on) − Drain-Source On-Resistance ( Ω ) gfs − Forward Transconductance (mS)

gfs − Forward Transconductance (mS)

ID − Drain Current (mA)

ID − Drain Current (mA)

AV − Voltage Gain

2N/SST5484 Series

Vishay Siliconix

www.vishay.com

6

Document Number: 70246

S-50148—Rev. G, 24-Jan-05

TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)

Common-Source Input Capacitance

vs. Gate-Source Voltage Common-Source Reverse Feedback

Capacitance vs. Gate-Source Voltage

f = 1 MHz

VDS = 0 V

10 V

VDS = 0 V

10 V

VGS − Gate-Source Voltage (V) VGS − Gate-Source Voltage (V)

f = 1 MHz

Reverse Admittance Output Admittance

Input Admittance Forward Admittance

100

10

1

0.1

100 1000

bis

gis

TA = 25_C

VDS = 15 V

VGS = 0 V

Common Source

(mS)

100

10

1

0.1

100 1000

TA = 25_C

VDS = 15 V

VGS = 0 V

Common Source

(mS)

−bfs

gfs

10

1

0.1

0.01

100 1000

(mS)

TA = 25_C

VDS = 15 V

VGS = 0 V

Common Source −brs

−grs

10

1

0.1

0.01

100 1000

TA = 25_C

VDS = 15 V

VGS = 0 V

Common Source

bos

gos

(mS)

f − Frequency (MHz) f − Frequency (MHz)

f − Frequency (MHz)f − Frequency (MHz)

5

0

4

3

2

1

0−20−4−8−12 −16

3

0

2.4

1.8

1.2

0.6

0−20−4−8−12 −16

200 500 200 500

200 500 200 500

Ciss − Input Capacitance (pF)

Crss − Reverse Feedback Capacitance (pF)

2N/SST5484 Series

Vishay Siliconix

Document Number: 70246

S-50148—Rev. G, 24-Jan-05

www.vishay.com

7

TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)

20

0

16

12

8

4

Equivalent Input Noise Voltage vs. Frequency Output Conductance vs. Drain Current

10 100 k10 k

ID = 5 mA

VDS = 10 V

0.1 1 10

TA = −55_C

125_C

VGS(off) = −3 V

ID − Drain Current (mA)f − Frequency (Hz)

20

0

16

12

8

4

ID = IDSS

VDS = 10 V

f = 1 kHz

100 1 k

VGS(off) = −3 V

25_C

en − Noise Voltage nV / Hz

gos − Output Conductance (µS)

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Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see

http://www.vishay.com/ppg?70246.

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