2N7000, 2N7002, BS170, VQ1000J, VQ1000P Datasheet. Www.s Manuals.com. 2n7000 2n7002 Bs170 Vq1000j Vishay

User Manual: Marking of electronic components, SMD Codes 72, 72*, 72***, 720, 7200, 7201A, 7212, 7217-33, 722, 723, 72N025S, 72W. Datasheets 2N7002, 2N7002T, 2N7002TB, 2N7002W, AON7200, AP7217-33SG-13, APW7212QB, BSC072N025S G, EUP7201-1.8/2.8JIR1, FMMT720, FMMT722, FMMT723, RT8237DZQW, UDZS3.9B.

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2N7000/2N7002, VQ1000J/P, BS170
Vishay Siliconix

N-Channel 60-V (D-S) MOSFET

PRODUCT SUMMARY
Part Number

V(BR)DSS Min (V)

2N7000
2N7002

rDS(on) Max (W)

VGS(th) (V)

ID (A)

5 @ VGS = 10 V

0.8 to 3

0.2

7.5 @ VGS = 10 V

1 to 2.5

0.115

5.5 @ VGS = 10 V

0.8 to 2.5

0.225

VQ1000P

5.5 @ VGS = 10 V

0.8 to 2.5

0.225

BS170

5 @ VGS = 10 V

0.8 to 3

0.5

60

VQ1000J

FEATURES

BENEFITS

APPLICATIONS

D
D
D
D
D

D
D
D
D
D

D Direct Logic-Level Interface: TTL/CMOS
D Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
D Battery Operated Systems
D Solid-State Relays

Low On-Resistance: 2.5 W
Low Threshold: 2.1 V
Low Input Capacitance: 22 pF
Fast Switching Speed: 7 ns
Low Input and Output Leakage

Low Offset Voltage
Low-Voltage Operation
Easily Driven Without Buffer
High-Speed Circuits
Low Error Voltage

TO-226AA
(TO-92)
S

TO-236
(SOT-23)

1
G

G

1
3

2
S

D

D

2

3
Top View
Top View

Marking Code: 72wll

2N7000

72 = Part Number Code for 2N7002
w = Week Code
ll = Lot Traceability

Dual-In-Line

N

D1

1

14

D4

S1

2

13

S4

G1

3

12

G4

4

11

G2

5

10

G3

S2

6

9

S3

D2

7

8

D3

NC

N

Top View
Plastic: VQ1000J
Sidebraze: VQ1000P

Document Number: 70226
S-04279—Rev. F, 16-Jul-01

N

NC

TO-92-18RM
(TO-18 Lead Form)
D

1

G

2

N
S

3

Top View
BS170

www.vishay.com

11-1

2N7000/2N7002, VQ1000J/P, BS170
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Single
Parameter
Drain-Source Voltage
Gate-Source Voltage—Non-Repetitive
Gate-Source Voltage—Continuous
Continuous Drain Current
(TJ = 150_C)

TA= 25_C
TA= 100_C

Pulsed Drain Currenta
Power Dissipation

Symbol

2N7000

2N7002

VQ1000J

VQ1000P

VDS

60

60

60

60

VGSM

"40

"40

"30

VGS

"20

"20

"20

"20

ID
IDM

TA= 25_C
TA= 100_C

Thermal Resistance, Junction-to-Ambient
Operating Junction and
Storage Temperature Range

Total Quad

PD
RthJA

VQ1000J/P

BS170
"25

V

"20

0.2

0.115

0.225

0.225

0.5

0.13

0.073

0.14

0.14

0.175

0.5

0.8

1

1

0.4

0.2

1.3

1.3

2

0.16

0.08

0.52

0.52

0.8

312.5

625

96

96

62.5

TJ, Tstg

Unit

60

A

0.83
W
156

_C/W
_C

–55 to 150

Notes
a. Pulse width limited by maximum junction temperature.
b. tp v 50 ms.

SPECIFICATIONSĊ2N7000 AND 2N7002 (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
2N7000

Parameter

Symbol

Test Conditions

Typa

Min

Max

2N7002

Min

Max

Unit

Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage

Gate-Body Leakage

V(BR)DSS
VGS(th)
IGSS

VGS = 0 V, ID = 10 mA

70

60

VDS = VGS, ID = 1 mA

2.1

0.8

VDS = VGS, ID = 0.25 mA

2.0

IDSS

V
1

VDS = 0 V, VGS = "15 V

"100

Drain-Source On-Resistanceb

ID(on)

rDS(on)

VDS = 60 V, VGS = 0 V

1

0.35

VDS = 7.5 V, VGS = 10 V

1

VGS = 4.5 V, ID = 0.075 A

4.5

VGS = 5 V, ID = 0.05 A

3.2

7.5

5.8

13.5

VGS = 10 V, ID = 0.5 A
TJ = 125_C
Forward Transconductanceb

gfs

VDS = 10 V, ID = 0.2 A

Common Source Output Conductanceb

gos

VDS = 5 V, ID = 0.05 A

m
mA

500

VDS = 10 V, VGS = 4.5 V

TC = 125_C

nA

1
1000

TC = 125_C
TC = 125_C

On-State Drain Currentb

2.5

"10

VDS = 0 V, VGS = "20 V
VDS = 48 V, VGS = 0 V

Zero Gate Voltage Drain Current

60
3

0.075
A

0.5
5.3

2.4

5

4.4

9
100

W

7.5
13.5
80
mS

0.5

Dynamic
Input Capacitance

Ciss

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

www.vishay.com

11-2

VDS = 25 V, VGS = 0 V
f = 1 MHz

22

60

50

11

25

25

2

5

5

pF

Document Number: 70226
S-04279—Rev. F, 16-Jul-01

2N7000/2N7002, VQ1000J/P, BS170
Vishay Siliconix
SPECIFICATIONSĊ2N7000 AND 2N7002 (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
2N7000

2N7002

Symbol

Test Conditions

Typa

Turn-On Time

tON

10

tOFF

VDD = 15 V, RL = 25 W
ID ^0.5 A, VGEN = 10 V, RG = 25 W

7

Turn-Off Time

7

10

Turn-On Time

tON

7

20

Turn-Off Time

tOFF

VDD = 30 V, RL = 150 W
ID ^ 0.2 A, VGEN = 10 V, RG = 25 W

11

20

Parameter

Min

Max

Min

Max

Unit

Switchingd

ns

SPECIFICATIONSĊVQ1000J/P AND BS170 (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
VQ1000J/P

Parameter

Typa

Symbol

Test Conditions

Min

V(BR)DSS

VGS = 0 V, ID = 100 mA

70

60

VGS(th)

VDS = VGS, ID = 1 mA

2.1

0.8

BS170

Max

Min

2.5

0.8

Max

Unit

Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage

VDS = 0 V, VGS = "10 V
Gate-Body Leakage

Zero Gate Voltage Drain Current
On-State Drain Currentb

Drain-Source On-Resistanceb

IDSS

VDS = 25 V, VGS = 0 V

0.5
500
10

VDS = 10 V, VGS = 10 V

1

VGS = 5 V, ID = 0.2 A

4

VGS = 10 V, ID = 0.2 A

2.3

VGS = 10 V, ID = 0.3 A

2.3

5.5

4.2

7.6

TJ = 125_C
gfs

Common Source Output Conductanceb

gos

mA
m

0.5

A
7.5
5

VDS = 10 V, ID = 0.2 A

W

100

VDS = 10 V, ID = 0.5 A
VDS =5 V, ID = 0.05 A

V

nA
"10

VDS = 60 V, VGS = 0 V

rDS(on)

Forward Transconductanceb

"500

VDS = 0 V, VGS = "15 V
VDS = 48 V, VGS = 0 V, TJ = 125_C

ID(on)

3

"100

TJ = 125_C

IGSS

60

100

mS

0.5

Dynamic
Input Capacitance

Ciss

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

22

60

11

25

2

5

VDD = 15 V, RL = 23 W
ID ^ 0.6 A, VGEN = 10 V, RG = 25 W

7

10

7

10

VDD = 25 V, RL = 125 W
ID ^ 0.2 A, VGEN = 10 V, RG = 25 W

7

10

7

10

VDS =25 V, VGS = 0 V
f = 1 MHz

60
pF

Switchingd
Turn-On Time

tON

Turn-Off Time

tOFF

Turn-On Time

tON

Turn-Off Time

tOFF

Notes
a. For DESIGN AID ONLY, not subject to production testing.
b. Pulse test: PW v80 ms duty cycle v1%.
c. This parameter not registered with JEDEC.
d. Switching time is essentially independent of operating temperature.
Document Number: 70226
S-04279—Rev. F, 16-Jul-01

ns

VNBF06

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11-3

2N7000/2N7002, VQ1000J/P, BS170
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Output Characteristics

Transfer Characteristics

1.0

1.0
6.5 V

VGS = 10, 9, 8, 7 V
0.8

0.8

6V
ID – Drain Current (A)

ID – Drain Current (A)

TJ = –55_C
5.5 V
0.6
5V
0.4

4.5 V
4V

0.2

3.5 V
3V
0

1

2

3

4

5

125_C
0.4

0.2
2.5 V
2, 1 V

0.0

25_C
0.6

0.0

6

0

1

2

VDS – Drain-to-Source Voltage (V)

3

5

6

7

8

VGS – Gate-to-Source Voltage (V)

On-Resistance vs. Drain Current

Capacitance

7

60
VGS = 0 V
f = 1 MHz

6

50
rDS @ 5 V = VGS

5
C – Capacitance (pF)

rDS(on) – On-Resistance ( Ω )

4

4
3

rDS @ 10 V = VGS

2

40

30
Ciss
20
Coss
10

1

Crss

0
0.0

0
0.2

0.4

0.6

0.8

0

1.0

5

ID – Drain Current (A)

15

20

25

30

35

VDS – Drain-to-Source Voltage (V)

Gate Charge

20

10

2.0

On-Resistance vs. Junction Temperature

12
VDS = 30 V
8

4

0
0

400

800

1200

1600

Qg – Total Gate Charge (pC)

www.vishay.com

11-4

VGS = 10 V, rDS @ 0.5 A

16
rDS(on) – On-Resistance ( Ω )
(Normalized)

VGS – Gate-to-Source Voltage (V)

ID = 0.5 A

2000

2400

1.5

1.0
VGS = 5 V, rDS @ 0.05 A

0.5

0.0
–55

–30

–5

20

45

70

95

120

145

TJ – Junction Temperature (_C)

Document Number: 70226
S-04279—Rev. F, 16-Jul-01

2N7000/2N7002, VQ1000J/P, BS170
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Source-Drain Diode Forward Voltage

On-Resistance vs. Gate-to-Source Voltage

1.000

rDS(on) – On-Resistance ( Ω )

6

IS – Source Current (A)

TJ = 125_C
0.100

TJ = 25_C
0.010

5

ID = 50 mA

4

500 mA

3

2

1

0

0.001
0.0

0.2

0.4

0.6

0.8

1.0

1.2

0

1.4

2

VSD – Source-to-Drain Voltage (V)

4

6

8

10

12

14

16

18

20

VGS – Gate-to-Source Voltage (V)

Threshold Voltage
0.50
ID = 250 mA

VGS(th) – Variance (V)

0.25

–0.00

–0.25

–0.50

–0.75
–50

–25

0

25

50

75

100

125

150

Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA, BS170 Only)
1

Normalized Effective Transient
Thermal Impedance

Duty Cycle = 0.5

0.2
0.1
0.1

Notes:

0.05

PDM

0.02
t1
t2
1. Duty Cycle, D =

0.01

t1
t2

2. Per Unit Base = RthJA = 156_C/W
3. TJM – TA = PDMZthJA(t)

Single Pulse
0.01
0.1

1

10

100

1K

10 K

t1 – Square Wave Pulse Duration (sec)

Document Number: 70226
S-04279—Rev. F, 16-Jul-01

www.vishay.com

11-5

Legal Disclaimer Notice
Vishay

Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.

Document Number: 91000
Revision: 18-Jul-08

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Title                           : 2N7000, 2N7002, BS170, VQ1000J, VQ1000P - Datasheet. www.s-manuals.com.
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