2N7000, 2N7002, NDF7000A, NDS7002A Datasheet. Www.s Manuals.com. 2n7000 2n7002 Ndf7000a National
User Manual: Marking of electronic components, SMD Codes 7002, 7005, 702, 702⚫, 702*, 703 *, 7030L, 704, 705, 709, 709**, 70N10L, 70T. Datasheets 2N7002, 2N7002-G, 2N7002DW, 2N7002E, 2N7002K, 2N7002L, 2N7002MTF, 2V7002K, 2V7002L, FAN7005M, FCX705, G709RCUf, G709T1Uf, L2N7002LT1G, MTN138ZN3, MTN7002N3, MTN7002ZHN3, MTNK1N3, MTNK2N3, PH7030L, SPB70N10L, SPI70N10L, SPP70N10L, TK71570AS.
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2N7000/2N7002/NDF7000A/NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description Features These n-channel enhancement mode field effect transistors are produced using National’s very high cell density third generation DMOS technology. These products have been designed to minimize on-state resistance provide rugged and reliable performance and fast switching. They can be used, with a minimum of effort, in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2A. This product is particularly suited to low voltage, low current applications, such as small servo motor controls, power MOSFET gate drivers, and other switching applications. Y Y Y Y Y Efficient high density cell design approaching (3 million/in2) Voltage controlled small signal switch Rugged High saturation current Low RDS (ON) TL/G/11378 – 2 TL/G/11378–1 TO-92 7000 Series TO-236 AB (SOT-23) 7002 Series TL/G/11378 – 3 Absolute Maximum Ratings Symbol Parameter 2N7000 2N7002 NDF7000A NDS7002A Units VDSS Drain-Source Voltage 60 V VDGR Drain-Gate Voltage (RGS s 1 MX) 60 V VGSS Gate-Source Voltage g 40 V ID Drain CurrentÐContinuous ÐPulsed PD Total Power Dissipation @ TA e 25§ C Derating above 25§ C TJ, TSTG Operating and Storage Temperature Range TL Maximum Lead Temperature for Soldering Purposes, (/16* from Case for 10 Seconds C1995 National Semiconductor Corporation TL/G/11378 200 115 400 280 mA 500 800 2000 1500 mA 400 200 625 300 mW 3.2 1.6 5 2.4 mW/§ C b 55 to 150 b 65 to 150 300 §C §C RRD-B30M115/Printed in U. S. A. 2N7000/2N7002/NDF7000A/NDS7002A N-Channel Enhancement Mode Field Effect Transistor March 1993 2N7000 Electrical Characteristics TC e 25§ C unless otherwise noted Symbol Parameter Conditions Min Typ Max Units 1 mA 1 mA b 10 nA OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS e 0V, ID e 10 mA IDSS Zero Gate Voltage Drain Current VDS e 48V, VGS e 0V IGSSF Gate-Body Leakage, Forward VGS e b15V, VDS e 0V 60 V TC e 125§ C ON CHARACTERISTICS* VGS(th) Gate Threshold Voltage VDS e VGS, ID e 1 mA rDS(ON) Static Drain-Source On-Resistance VGS e 10V, ID e 0.5A Drain-Source On-Voltage VGS e 10V, ID e 0.5A VGS e 4.5V, ID e 75 mA VDS(ON) 0.8 TC e 125§ C 2.1 3 V 1.2 5 X 1.9 9 X 0.6 2.5 V 0.14 0.4 V ID(ON) On-State Drain Current VGS e 4.5V, VDS e 10V 75 600 mA gFS Forward Transconductance VDS e 10V, ID e 200 mA 100 320 ms DYNAMIC CHARACTERISTICS Ciss Input Capacitance VDS e 25V, VGS e 0V, f e 1.0 MHz 20 60 Coss Output Capacitance 11 25 pF pF Crss Reverse Transfer Capacitance 4 5 pF 10 ns 10 ns SWITCHING CHARACTERISTICS* ton Turn-On Time toff Turn-Off Time VDD e 15V, ID e 0.5V, VGS e 10V, RG e 25X, RL e 25X BODY-DRAIN DIODE RATINGS IS Maximum Continuous Drain-Source Diode Forward Current 200 mA ISM* Maximum Pulsed Drain-Source Diode Forward Current 500 mA VSD* Drain-Source Diode Forward Voltage 1.5 V 312.5 § C/W 40 § C/W VGS e 0V, IS e 200 mA THERMAL CHARACTERISTICS RiJA Thermal Resistance, Junction to Ambient RiJC Thermal Resistance, Junction to Case *Pulse Test: Pulse Width s 300 ms, Duty Cycle s 2.0%. 2 2N7002 Electrical Characteristics TC e 25§ C unless otherwise noted Symbol Parameter Conditions Min Typ Max Units 1 mA 500 mA 100 nA b 100 nA OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS e 0V, ID e 10 mA IDSS Zero Gate Voltage Drain Current VDS e 60V, VGS e 0V IGSSF Gate-Body Leakage, Forward VGS e 20V Gate-Body Leakage, Reverse VGS e b20V 60 V TC e 125§ C IGSSR ON CHARACTERISTICS* VGS(th) Gate Threshold Voltage VDS e VGS, ID e 250 mA rDS(ON) Static Drain-Source On-Resistance VGS e 10V, ID e 0.5A 1 TC e 125§ C VGS e 5V, ID e 50 mA TC e 125§ C VDS(ON) Drain-Source On-Voltage 2.1 2.5 V 1.2 7.5 X 2 13.5 X 1.7 7.5 X 2.8 13.5 X VGS e 10V, ID e 0.5A 0.6 3.75 V VGS e 5V, ID e 50 mA 0.09 1.5 V ID(ON) On-State Drain Current VGS e 10V, VDS t 2 VDS(ON) gFS Forward Transconductance VDS t 2 VDS(ON), ID e 200 mA 500 2700 mA 80 320 ms DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Crss VDS e 25V, VGS e 0V, f e 1.0 MHz 20 50 pF Output Capacitance 11 25 pF Reverse Transfer Capacitance 4 5 pF 20 ns 20 ns SWITCHING CHARACTERISTICS* tON Turn-On Time tOFF Turn-Off Time VDD e 30V, ID e 200 mA, VGS e 10V, RGEN e 25X, RL e 150X BODY-DRAIN DIODE RATINGS IS Maximum Continuous Drain-Source Diode Forward Current 115 mA ISM Maximum Pulsed Drain-Source Diode Forward Current 800 mA VSD* Drain-Source Diode Forward Voltage 1.5 V 625 § C/W VGS e 0V, IS e 115 mA THERMAL CHARACTERISTICS RiJA Thermal Resistance, Junction to Ambient *Pulse Test: Pulse Width s 300 ms, Duty Cycle s 2.0%. 3 NDF7000A Electrical Characteristics TC e 25§ C unless otherwise noted Symbol Parameter Conditions Min Typ Max Units 1 mA 1 mA b 10 nA OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS e 0V, ID e 10 mA IDSS Zero Gate Voltage Drain Current VDS e 48V, VGS e 0V IGSSF Gate-Body Leakage, Forward VGS e b15V 60 V TC e 125§ C ON CHARACTERISTICS* VGS(th) Gate Threshold Voltage VDS e VGS, ID e 1 mA rDS(ON) Static Drain-Source On-Resistance VGS e 10V, ID e 0.5A Drain-Source On-Voltage VGS e 10V, ID e 500 mA 0.6 1 V VGS e 4.5V, ID e 75 mA 0.14 0.225 V VDS(ON) 0.8 TC e 125§ C 2.1 3 V 1.2 2 X 2 3.5 X ID(ON) On-State Drain Current VGS e 4.5V, VDS t 2 VDS(ON) 400 600 mA gFS Forward Transconductance VDS t 2 VDS(ON), ID e 200 mA 100 320 ms DYNAMIC CHARACTERISTICS Ciss Input Capacitance VDS e 25V, VGS e 0V, f e 1.0 MHz 20 60 Coss Output Capacitance 11 25 pF pF Crss Reverse Transfer Capacitance 4 5 pF SWITCHING CHARACTERISTICS* ton Turn-On Time toff Turn-Off Time VDD e 15V, ID e 500 mA, VGS e 10V, RG e 25X, RL e 25X 10 ns 10 ns 400 mA 2000 mA 1.2 V 200 § C/W BODY-DRAIN DIODE RATINGS IS Maximum Continuous Drain-Source Diode Forward Current ISM Maximum Pulsed Drain-Source Diode Forward Current VSD* Drain-Source Diode Forward Voltage VGS e 0V, IS e 400 mA 0.88 THERMAL CHARACTERISTICS RiJA Thermal Resistance, Junction to Ambient *Pulse Test: Pulse Width s 300 ms, Duty Cycle s 2.0%. 4 NDS7002A Electrical Characteristics TC e 25§ C unless otherwise noted Symbol Parameter Conditions Min Typ Max Units 1 mA 500 mA 100 nA b 100 nA OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS e 0V, ID e 10 mA IDSS Zero Gate Voltage Drain Current VDS e 60V, VGS e 0V IGSSF Gate-Body Leakage, Forward VGS e 20V Gate-Body Leakage, Reverse VGS e b20V 60 V TC e 125§ C IGSSR ON CHARACTERISTICS* VGS(th) Gate Threshold Voltage VDS e VGS, ID e 250 mA rDS(ON) Static Drain-Source On-Resistance VGS e 10V, ID e 0.5A 1 TC e 125§ C VGS e 5V, ID e 50 mA TC e 125§ C VDS(ON) Drain-Source On-Voltage 2.1 2.5 V 1.2 2 X X 2 3.5 1.7 3 X 2.8 5 X VGS e 10V, ID e 500 mA 0.6 1 V VGS e 5.0V, ID e 50 mA 0.09 0.15 V ID(ON) On-State Drain Current VGS e 10V, VDS t 2 VDS(ON) 500 2700 mA gFS Forward Transconductance VDS t 2 VDS(ON), ID e 200 mA 80 320 ms DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Crss VDS e 25V, VGS e 0V, f e 1.0 MHz 20 50 pF Output Capacitance 11 25 pF Reverse Transfer Capacitance 4 5 pF 20 ns 20 ns SWITCHING CHARACTERISTICS* tON Turn-On Time tOFF Turn-Off Time VDD e 30V, ID e 200 mA, VGS e 10V, RG e 25X, RL e 150X BODY-DRAIN DIODE RATINGS IS Maximum Continuous Drain-Source Diode Forward Current 280 mA ISM Maximum Pulsed Drain-Source Diode Forward Current 1500 mA 1.2 V 417 § C/W VSD* Drain-Source Diode Forward Voltage VGS e 0V, IS e 400 mA 0.88 THERMAL CHARACTERISTICS RiJA Thermal Resistance, Junction to Ambient *Pulse Test: Pulse Width s 300 ms, Duty Cycle s 2.0%. 5 Typical Electrical Characteristics 2N7000/2N7002/NDF7000A/NDS7002A TL/G/11378–4 TL/G/11378 – 5 FIGURE 1. On-Region Characteristics FIGURE 2. rDS(ON) Variation with Drain Current and Gate Voltage TL/G/11378 – 7 TL/G/11378–6 FIGURE 4. Breakdown Voltage Variation with Temperature FIGURE 3. Transfer Characteristics TL/G/11378–8 TL/G/11378 – 9 FIGURE 5. Gate Threshold Variation with Temperature FIGURE 6. On-Resistance Variation with Temperature 6 Typical Electrical Characteristics (Continued) 2N7000/2N7002/NDF7000A/NDS7002A (Continued) TL/G/11378 – 10 TL/G/11378 – 11 FIGURE 8. Body Diode Forward Voltage Variation with Current and Temperature FIGURE 7. On-Resistance vs Drain Current TL/G/11378 – 13 TL/G/11378 – 12 FIGURE 10. Gate Charge vs Gate-Source Voltage FIGURE 9. Capacitance vs Drain-Source Voltage TL/G/11378 – 14 TL/G/11378 – 15 FIGURE 11. 2N7000 Safe Operating Area FIGURE 12. 2N7002 Safe Operating Area 7 Typical Electrical Characteristics (Continued) 2N7000/2N7002/NDF7000A/NDS7002A (Continued) TL/G/11378 – 16 TL/G/11378 – 17 FIGURE 13. NDF7000A Safe Operating Area FIGURE 14. NDS7002A Safe Operating Area TL/G/11378 – 18 FIGURE 15. TO-92 Transient Thermal Response TL/G/11378 – 19 FIGURE 16. SOT-23 Transient Thermal Response 8 Physical Dimensions inches (millimeters) TL/G/11378 – 20 TO-92 9 2N7000/2N7002/NDF7000A/NDS7002A N-Channel Enhancement Mode Field Effect Transistor Physical Dimensions inches (millimeters) (Continued) TL/G/11378 – 21 Note 1: Meets all JEDEC dimensional requirements for TO-236AB. Note 2: Controlling dimension: millimeters. Note 3: Available also in TO-236AA. Contact your local National Semiconductor representative for delivery and ordering information. Note 4: Tape and reel is the standard packaging method for TO-236. TO-236AB (SOT-23) (Notes 3, 4) LIFE SUPPORT POLICY NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform, when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. National Semiconductor Corporation 1111 West Bardin Road Arlington, TX 76017 Tel: 1(800) 272-9959 Fax: 1(800) 737-7018 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. National Semiconductor Europe Fax: (a49) 0-180-530 85 86 Email: cnjwge @ tevm2.nsc.com Deutsch Tel: (a49) 0-180-530 85 85 English Tel: (a49) 0-180-532 78 32 Fran3ais Tel: (a49) 0-180-532 93 58 Italiano Tel: (a49) 0-180-534 16 80 National Semiconductor Hong Kong Ltd. 13th Floor, Straight Block, Ocean Centre, 5 Canton Rd. Tsimshatsui, Kowloon Hong Kong Tel: (852) 2737-1600 Fax: (852) 2736-9960 National Semiconductor Japan Ltd. Tel: 81-043-299-2309 Fax: 81-043-299-2408 National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications. www.s-manuals.com
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