2N7002 Datasheet. Www.s Manuals.com. Calogic
User Manual: Marking of electronic components, SMD Codes V0, V0**, V0-***, V00, V02, V08, V0=***. Datasheets 2N7002, 74LVC1G00GV, 74LVC1G08GV, RT9271GB, RT9271PB, TC74A0-3.3VCT, TZT2V4CW.
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N-Channel Enhancement-Mode MOS Transistor CORPORATION 2N7002 DESCRIPTION ORDERING INFORMATION Calogic’s 2N7002 device type is a vertical DMOS FET transistor housed in a surface mount SOT-23 for micro-assembly applications. The device is an excellent choice for switching applications where breakdown (BV) and low on-resistance are important. Part Package 2N7002 X2N7002 Plastic SOT-23 Package Sorted Chips in Carriers Temperature Range -55oC to +150oC -55oC to +150oC PIN CONFIGURATION SOT-23 1 D 2 1 DRAIN 2 SOURCE 3 GATE 1 3 G 3 TOP VIEW S 2 CD5 PRODUCT SUMMARY V(BR)DSS (V) rDS(ON) (Ω) ID (A) 60 7.5 0.115 PRODUCT MARKING 2N7002 9-3 V02 2N7002 CORPORATION ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise specified) SYMBOL PARAMETERS LIMITS VDS Drain-Source Voltage 60 VGS Gate-Source Voltage ±40 ID Continuous Drain Current Pulsed Drain Current IDM UNITS V TA = 25oC 0.115 A 0.073 1 TEST CONDITIONS TA = 100 oC 0.8 200 PD Power Dissipation TJ Operating Junction Temperature Range -55 to 150 Tstg Storage Temperature Range -55 to 150 TL Lead Temperature (1/16" from case for 10 sec.) mW 80 o TA = 25oC TA = 100 oC C 300 THERMAL RESISTANCE RATINGS NOTE: SYMBOL THERMAL RESISTANCE LIMITS UNITS RthJA Junction-to-Ambient 625 K/W 1. Pulse width limited by maximum junction temperature. SPECIFICATIONS1 SYMBOL PARAMETER MIN TYP2 MAX UNIT TEST CONDITIONS STATIC V(BR)DSS Drain-Source Breakdown Voltage 60 70 VGS(th) Gate-Threshold Voltage 1 1.9 IGSS Gate-Body Leakage IDSS Zero Gate Voltage Drain Current 3 On-State Drain Current ID(ON) 500 Drain-Source On-Voltage3 VDS(ON) V ±100 nA 1 µA 500 Drain-Source On-Resistance3 rDS(ON) 2.5 1000 mA 5 7.5 9 13.5 2.5 7.5 4.4 13.5 0.25 0.375 1.25 3.75 2.2 6.75 ID = 10µA, VGS = 0V VDS = VGS, I D = 0.25mA VGS = ±20V, VDS = 0V VDS = 60V, VGS = 0V TC = 125oC VDS = ≥2VDS(ON), VGS = 10V VGS = 5V, I D = 50mA Ω TC = 125oC VGS = 10V, ID = 0.5A TC = 125oC VGS = 5V, I D = 50mA V VGS = 10V, ID = 0.5A TC = 125oC4 gFS Forward Transconductance3 170 mS VDS = 10V, ID = 0.2A gOS Common Source Output Conductance3, 4 500 µS VDS = 5V, ID = 50mA Input Capacitance 16 50 pF VDS = 25V, VGS = 0V, f = 1MHz nS VDD = 30V, RL = 150Ω, ID = 0.2A VGEN = 10V, RG = 25Ω (Switching time is essentially independent of operating temperature) 80 DYNAMIC C iss 4 Coss Output Capacitance 11 25 Crss Reverse Transfer Capacitance 2 5 Turn-On Time 7 20 SWITCHING t ON t OFF NOTES: 1. 2. 3. 4. Turn-Off Time 7 TA = 25oC unless otherwise specified. For design aid only, not subject to production testing. Pulse test; PW = ≤80µS, duty cycle ≤1%. This parameter not registered with JEDEC. 9-4 20 www.s-manuals.com
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