2N7002E Datasheet. Www.s Manuals.com. On

User Manual: Marking of electronic components, SMD Codes 7002, 7005, 702, 702⚫, 702*, 703 *, 7030L, 704, 705, 709, 709**, 70N10L, 70T. Datasheets 2N7002, 2N7002-G, 2N7002DW, 2N7002E, 2N7002K, 2N7002L, 2N7002MTF, 2V7002K, 2V7002L, FAN7005M, FCX705, G709RCUf, G709T1Uf, L2N7002LT1G, MTN138ZN3, MTN7002N3, MTN7002ZHN3, MTNK1N3, MTNK2N3, PH7030L, SPB70N10L, SPI70N10L, SPP70N10L, TK71570AS.

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2N7002E
Small Signal MOSFET
60 V, 310 mA, Single, N−Channel, SOT−23
Features

•
•
•
•

Low RDS(on)
Small Footprint Surface Mount Package
Trench Technology
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant

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V(BR)DSS

RDS(on) MAX

ID MAX
(Note 1)

60 V

3.0 W @ 4.5 V

310 mA

Applications

•
•
•
•

2.5 W @ 10 V

Low Side Load Switch
Level Shift Circuits
DC−DC Converter
Portable Applications i.e. DSC, PDA, Cell Phone, etc.

Simplified Schematic
N−Channel
3

MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Symbol

Value

Unit

Drain−to−Source Voltage

VDSS

60

V

Gate−to−Source Voltage

VGS

±20

V

Rating

Drain Current (Note 1)
Steady State
t<5s

TA = 25°C
TA = 85°C

ID

mA

260
190

Power Dissipation (Note 1)
Steady State
t<5s

PD

Pulsed Drain Current (tp = 10 ms)

IDM

1.2

A

Operating Junction and Storage
Temperature Range

TJ, TSTG

−55 to
+150

°C

Source Current (Body Diode)

IS

300

mA

Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)

TL

260

°C

mW

300
420

THERMAL CHARACTERISTICS
Symbol

Max

Unit

Junction−to−Ambient − Steady State
(Note 1)

RqJA

417

°C/W

Junction−to−Ambient − t ≤ 5 s (Note 1)

RqJA

300

1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in
sq [1 oz] including traces)

February, 2011 − Rev. 3

3

MARKING DIAGRAM
& PIN ASSIGNMENT
Drain
3

Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

© Semiconductor Components Industries, LLC, 2011

2
(Top View)

310
220

TA = 25°C
TA = 85°C

Characteristic

1

1

1

703 MG
G

2

SOT−23
CASE 318
STYLE 21

1

2

Gate

Source

703
= Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)

ORDERING INFORMATION
Device
2N7002ET1G

Package

Shipping†

SOT−23
(Pb−Free)

3000/Tape & Reel

†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.

Publication Order Number:
2N7002E/D

2N7002E
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Symbol

Test Condition

Min

Drain−to−Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = 250 mA

60

Drain−to−Source Breakdown Voltage
Temperature Coefficient

V(BR)DSS/TJ

Parameter

Typ

Max

Units

OFF CHARACTERISTICS

Zero Gate Voltage Drain Current

IDSS

Gate−to−Source Leakage Current

V
75

VGS = 0 V,
VDS = 60 V

mV/°C

TJ = 25°C

1

TJ = 125°C

500

IGSS

VDS = 0 V, VGS = ±20 V

VGS(TH)

VGS = VDS, ID = 250 mA

mA

±100

nA

2.5

V

ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient

VGS(TH)/TJ

Drain−to−Source On Resistance

RDS(on)

Forward Transconductance

gFS

1.0
4.4

mV/°C

VGS = 10 V, ID = 240 mA

0.86

2.5

VGS = 4.5 V, ID = 50 mA

1.1

3.0

VDS = 5 V, ID = 200 mA

530

W

mS

CHARGES AND CAPACITANCES
Input Capacitance

CISS

Output Capacitance

COSS

Reverse Transfer Capacitance

CRSS

26.7
VGS = 0 V, f = 1 MHz,
VDS = 25 V

pF

4.6
2.9

Total Gate Charge

QG(TOT)

0.81

Threshold Gate Charge

QG(TH)

0.31

Gate−to−Source Charge

QGS

Gate−to−Drain Charge

QGD

VGS = 5 V, VDS = 10 V;
ID = 240 mA

40

nC

0.48
0.08

SWITCHING CHARACTERISTICS, VGS = V (Note 3)
Turn−On Delay Time

td(ON)

Rise Time
Turn−Off Delay Time

tr
td(OFF)

Fall Time

ns

1.7
VGS = 10 V, VDD = 30 V,
ID = 200 mA, RG = 10 W

tf

1.2
4.8
3.6

DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage

VSD

VGS = 0 V,
IS = 200 mA

2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%
3. Switching characteristics are independent of operating junction temperatures

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2

TJ = 25°C

0.79

TJ = 85°C

0.7

1.2

V

2N7002E
TYPICAL CHARACTERISTICS

4.0 V

3.5 V

0.8
3.0 V
0.4

2.5 V
2.0 V
0

2

4

6

TJ = 125°C
0

TJ = −55°C
2

4

6

VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 1. On−Region Characteristics

Figure 2. Transfer Characteristics

VGS = 4.5 V

TJ = 125°C

2.0

TJ = 85°C

1.6
TJ = 25°C
1.2
TJ = −55°C

0.8
0.4

0

TJ = 25°C

0.4

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

2.4

0

0.8

0

RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)

RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)

ID, DRAIN CURRENT (A)

1.2

0

RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)

4.5 V

9.0 V
8.0 V
7.0 V
6.0 V

1.6

1.2

5.0 V

VGS = 10 V

0.2

0.4

0.6

0.8

1.0

1.2

2.4
VGS = 10 V
2.0
TJ = 125°C

1.6

TJ = 85°C

1.2

TJ = 25°C

0.8

TJ = −55°C

0.4
0

0

0.2

0.4

0.6

0.8

1.0

1.2

ID, DRAIN CURRENT (A)

ID, DRAIN CURRENT (A)

Figure 3. On−Resistance vs. Drain Current and
Temperature

Figure 4. On−Resistance vs. Drain Current and
Temperature

1.6

2.2
ID = 0.2 A
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)

ID, DRAIN CURRENT (A)

2.0

ID = 250 mA
1.2
ID = 75 mA

0.8

0.4

2

4

6

8

1.8

VGS = 10 V

1.4

1.0

0.6
−50

10

VGS = 4.5 V

−25

0

25

50

75

100

125

VGS, GATE−TO−SOURCE VOLTAGE (V)

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On−Resistance vs. Gate−to−Source
Voltage

Figure 6. On−Resistance Variation with
Temperature

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3

150

2N7002E
TYPICAL CHARACTERISTICS

30

VGS, GATE−TO−SOURCE VOLTAGE (V)

TJ = 25°C
VGS = 0 V

Ciss

20
Coss

10

0

Crss
0

4

8

12

16

20

5
TJ = 25°C
ID = 0.25 A

4
3
2
1
0

0

0.2

0.4

0.6

0.8

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)

Qg, TOTAL GATE CHARGE (nC)

Figure 7. Capacitance Variation

Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge

10
VGS = 0 V
IS, SOURCE CURRENT (A)

C, CAPACITANCE (pF)

40

1
TJ = 85°C

TJ = 25°C

0.1

0.01

0.2

0.4

0.6

0.8

1.0

VSD, SOURCE−TO−DRAIN VOLTAGE (V)

Figure 9. Diode Forward Voltage vs. Current

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4

1.2

1

2N7002E
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.

D
SEE VIEW C
3

HE

E

DIM
A
A1
b
c
D
E
e
L
L1
HE
q

c
1

2

e

b

0.25
q

A
L

A1

MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
0°

MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
−−−
10 °

MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
0°

INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
−−−

MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
10°

STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN

L1
VIEW C

SOLDERING FOOTPRINT
0.95
0.037

0.95
0.037

2.0
0.079
0.9
0.035
SCALE 10:1

0.8
0.031

mm Ǔ
ǒinches

ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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