2N7002 Datasheet. Www.s Manuals.com. Megapower
User Manual: Marking of electronic components, SMD Codes 7002, 7005, 702, 702⚫, 702*, 703 *, 7030L, 704, 705, 709, 709**, 70N10L, 70T. Datasheets 2N7002, 2N7002-G, 2N7002DW, 2N7002E, 2N7002K, 2N7002L, 2N7002MTF, 2V7002K, 2V7002L, FAN7005M, FCX705, G709RCUf, G709T1Uf, L2N7002LT1G, MTN138ZN3, MTN7002N3, MTN7002ZHN3, MTNK1N3, MTNK2N3, PH7030L, SPB70N10L, SPI70N10L, SPP70N10L, TK71570AS.
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2N7002 N-Channel 60V (D-S)MOSFET General Description Features These products have been designed to minimize onState resistance while provide rugged,reliable,and fast V DS (V) = 60V I D (A) = 250mA (V GS = 10V) switching performance . It can be used in most applications requiring up to 250mA DC and can deliver R DS(on) = 5ohm @ V GS = 10V pulsed currents up to 1A.These products are particularly R DS(on) = 7.5 ohm@ V GS = 5V suited for low voltage,low current applications such as High density cell design for low R DS(ON). small servo motor control, power MOSFET gate drivers, and other switching applications. Voltage controlled small signal switch. Applications Rugged and reliable. Direct Logic-level Interface:TTL/CMOS Battery Operated Systems Solid-state Relays Drivers:Relays,Lamps,Display,Transistors, Solenoids,Memories,etc High saturation current capability D D S SOT-23 G G S ABSOLUTE MAXIMUM RATINGS (TA = 25℃ UNLESS OTHERWISE NOTED) Symbol Maximum Drain-Source Voltage V DS 60 Gate-Source Voltage V GS + - 20 Parameter Continuous Drain Current T A =25℃ a ID Continuous Source Current (Diode Conduction) a 1.0 A IS 250 mA PD 300 190 mW T J ,T stg -55 to 150 ℃ Symbol Maximum Units 350 ℃/W T A =70℃ Operating Junction and Storage Temperature Range mA I DM T A =25℃ Power Dissipation a V 200 T A =70℃ Pulsed Drain Current b 250 Units THERMAL RESISTANCE RATINGS Parameter Thermal Resistance Junction-to-Ambient www.megapower .com.cn t<= 10 sec 1 R θJA Feb.2012 Rev.2.0 2N7002 Package Outlines and Ordering Information Device Device Marking 702 2N7002 Reel Size Tape Width Quantity 7’’ 8mm 3000 units SPECIFICATIONS (TA = 25℃ UNLESS OTHERWISE NOTED) Symbol Parameter Limits Test Conditions Min Units Typ Max 2.0 2.5 Static Drain-Source Breakdown Voltage Gate-Threshold Voltage V (BR)DSS V GS(th) Gate-Body Leakage I GSS Zero Gate Voltage Drain Current I DSS On-State Drain Current c Drain-Source On-Resistance I D(on) c V GS =0V,I D =10 u A V DS =V GS ,I D = 250 u A 60 1.0 V DS =0V,V GS = + - 20V + - 100 VDS=60V,VGS=0V 1 VDS=60V,VGS=0V,TJ=55℃ 10 VDS=7V,VGS=10V 0.5 1.4 5.0 V GS=5.0 V, I D=50mA 3.0 7.5 Forward Tranconductance c g fs V DS =7V,I D =200mA Diode Forward Voltage V SD I S =250mA,V GS =0V 78 nA uA A VGS=10V,ID=250mA R DS(on) V Ω mS 200 0 . 75 1.5 0.4 0.6 V Dynamic Total Gate Charge Qg Gate-Source Charge Q gs Gate-Drain Charge Q gd Input Capacitance C ISS V DS =10V,V GS =4.5V I D =250mA 0.06 nC 0.06 V DS = 25 V,V GS = 0 V f=1.0MHz 20 50 11 25 Output Capacitance C OSS Reverse Transfer Capacitance C r SS 2.5 5 t d(on) 7.8 20 pF Switching Turn-On Delay Time Rise Time Turn-Off Delay Time Fall-Time tr t d(off) VDS=30V, ID=100mA, RG=10 ohm,VGEN=10V 5.5 7.8 ns 20 2.8 tf Notes: a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature c. Pulse test: PW <= 300us duty cycle <= 2%. www.megapower .com.cn 2 Feb.2012 Rev.2.0 2N7002 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 9.0 8.0 VGS=10V 1.5 R DS (on) On-Resistance (Ω) (Nromalized) I D - Drain Current(A) 2 7.0 6.0 1 5.0 0.5 3.0 0 0 1 2 5 4 3 4 5.0 10 1 0 0 0.4 R DS(on) On-Resistance(Ω) R DS (on) On-Resistance (Ω) (Nromalized) 3 1.5. 1.25 1 0.75 50 75 100 125 1.5 25℃ 1 -55℃ 0.5 0 150 TJ = 125℃ 2 0 0.4 0.8 Vth Normalized Gate-Source Threshold Voltage I D - Drain Current(A) 25℃ TJ=-55℃ 1.2. 0.8 0.4 0 4 6 1.6 2 Figure4 .On-Resistance Variation With Drain Current and Temperature 125℃ 2 1.2 I D Drain Current(A) 2 0 2.0 V GS =10V Figure 3. On - Resistance Variation with Temperature 1.6. 1.6 2.5 T J - Junction Temperature(℃) V DS =10V 1.2 Figure2 .On-Resistance Variation With Gate Voltage and Drain Current V GS =10V I D =250mA 25 0.8 I D Drain Current(A) 2 0 8.0 2 Figure 1. On - Region Characteristics 0.5 - 50 - 25 7.0 6.0 3 -V DS Drain -to-Source Voltage(V) 1.75 4.5 V GS =4.0V 8 10 1.1 V DS =V GS I D =1mA 1.05 1 0.95 0.9 0.85 0.8 -50 -25 0 25 50 75 100 125 V GS (Volts) Tj Junction Temperature(℃) Figure 5. T ransfer Characteristics Figure 6.Gate Threshold Variation With Temperature www.megapower .com.cn 3 150 Feb.2012 Rev.2.0 2N7002 BV DSS Normalized Drain-Source Breakdown Voltage(V) TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2 1 1.1 I S Reverse Drain Current(A) I D =250μA 1.075 1.05 1.025 1 0.975 0.95 0.925 -50 -25 0 25 75 50 100 125 150 V GS =0V 0.5 125℃ 0.1 25℃ -55℃ 0.05 0.01 0.005 0.001 0.2 0.4 T J Junction Temperature(℃) Figure 7.Breakdown Voltage Variation with Temperature 3 2 R DS(on) Limit 1 40 ID -Drain Current(A) Capacitance(pF) C iss 20 C oss 10 5 f=1MHz V GS =0V C rss 2 5 3 10 20 30 100us 0. 5 1ms 0.1 0 . 05 0.01 0 . 0 05 1 1 1.4 1.2 1 0.8 Figure 8.Body Diode Forward Voltage Variation with Temperature 60 2 0.6 V SD Body Diode Forward Voltage(V) 50 100ms V GS =10V Single Pulse T A =25 ℃ 1 2 5 1s DC 10s 10 20 30 60 80 V DS Drain-to-Source Voltage(V) VDS Drain-to-Source Voltage(V) Figure 9. Capacitance Characteristics Figure10 . Maximum Safe Operating Area Normalized Effective Transient Thermal Resistance 1 0.5 0.2 0.1 0.05 D=0.5 0.2 RθJ A ( t ) = r( t ) * RθJ A RθJ A=( S e e D a t a s h e e t ) 0.1 . 0.05 P( pk) t1 0.01 0.01 0.01 Single Pulse 0.002 0.001 0.0001 0.001 t2 T J - TA = P * RθJ A(t ) D u t y C y c l e , D = t1/ t 2 0.01 0.1 1 10 100 300 t1 ,Time(sec) Figure11 . Transient Thermal Response Curve www.megapower .com.cn 4 Feb.2012 Rev.2.0 2N7002 Package Outline SOT23_3Lead Unit:mm D Symbol Min Nom Max A 0.70 1.00 1.15 A1 0.00 --- 0.13 b 0.30 0.40 0.50 c 0.08 0.13 0.20 D 2.80 2.90 3.10 E 2.60 2.80 3.00 E1 1.40 1.60 1.80 3 E1 1 E 2 e e1 TOP VIEW e 0.95 BSC e1 1.90 BSC L 0.40 REF L1 0.54 REF 0º θ 5º 8º A θ b L1 A1 SIDE VIEW L c END VIEW Notes: (1) All dimensions are in millimeters.Angles in degrees. (2) Package body sizes exclude mold flash and gate burrs . (3) Complies with JEDEC TO-236. Doc.SOT23_3L-071012 www.megapower .com.cn 5 Feb.2012 Rev.2.0 www.s-manuals.com
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