2N7002 Datasheet. Www.s Manuals.com. Megapower

User Manual: Marking of electronic components, SMD Codes 7002, 7005, 702, 702⚫, 702*, 703 *, 7030L, 704, 705, 709, 709**, 70N10L, 70T. Datasheets 2N7002, 2N7002-G, 2N7002DW, 2N7002E, 2N7002K, 2N7002L, 2N7002MTF, 2V7002K, 2V7002L, FAN7005M, FCX705, G709RCUf, G709T1Uf, L2N7002LT1G, MTN138ZN3, MTN7002N3, MTN7002ZHN3, MTNK1N3, MTNK2N3, PH7030L, SPB70N10L, SPI70N10L, SPP70N10L, TK71570AS.

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General Description
2N7002
N-Channel 60V (D-S)MOSFET
VDS (V) = 60V
ID(A) = 250mA (VGS = 10V)
RDS(on) = 5ohm @ VGS = 10V
RDS(on) = 7.5 ohm@ VGS = 5V
High density cell design for low RDS(ON).
Voltage controlled small signal switch.
Rugged and reliable.
Features
ABSOLUTE MAXIMUM RATINGS (TA = 25℃ UNLESS OTHERWISE NOTED)
Symbol Maximum Units
VDS 60
VGS 20 V
ID
250
1.0
250
TA=25℃
TA=70℃
TA=25℃
TA=70℃
IDM
IS
PD
TJ,Tstg
300
-55 to 150
190
℃
mA
mA
mW
200
THERMAL RESISTANCE RATINGS
Symbol Maximum Units
350 ℃/W
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current a
Pulsed Drain Current b
Continuous Source Current (Diode Conduction) a
Power Dissipation a
Operating Junction and Storage Temperature Range
Parameter
Thermal Resistance Junction-to-Ambient t<= 10 sec RθJA
These products have b een d esigned t o m inimize o n-
State resistance while provide rugged,reliable,and fast
switching performance . It can be used in most
applications requiring up to 250mA DC and can deliver
pulsed currents up to 1A.These products are particularly
suited for low voltage,low current applications such as
small s ervo m otor c ontrol, p ower MOSFET gate d rivers,
and o ther s witching a pplications.
High saturation current capability
A
1
Direct Logic-level Interface:TTL/CMOS
Battery Operated Systems
Solid-state Relays
Applications
Drivers:Relays,Lamps,Display,Transistors,
Solenoids,Memories,etc
G
D
S
SOT-23
D
S
G
+
-
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SPECIFICATIONS (TA = 25℃ UNLESS OTHERWISE NOTED)
Parameter Units
Symbol Test Conditions Limits
Min Typ Max
V(BR)DSS VGS=0V,ID=10uA
V
c. Pulse test: PW <= 300us duty cycle <= 2%.
60
1.02.0
100
1
10
0.5
VDS =VGS,ID = 250 uA
VDS=0V,VGS= 20V
7.5
5.0
78
1.5
gfs mS
VSD
VDS=60V,VGS=0V
VGS(th)
IGSS
ID(on)
IDSS
Ω
nA
uA
A
V
VDS=30V, ID=100mA,
RG=10 ohm,VGEN=10V
20
11
2.5
7.8
5.5
7.8
2.8
pF
ns
CISS
COSS
CrSS
td(on)
tr
td(off)
tf
RDS(on)
2.5
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current c
Forward Tranconductance c
Diode Forward Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall-Time
Drain-Source On-Resistance
c
Dynamic
VDS=60V,VGS=0V,TJ=55℃
VDS=7V,VGS=10V
VGS=10V,ID=250mA
VGS=5.0 V, ID=50 mA
VDS=7V,ID=200mA
IS=250mA,VGS=0V
VDS=25V,VGS=0V
f=1.0MHz
0.75
Device Tape Width
Package Outlines and Ordering Information
Device Marking Reel Size Quantity
702
2N7002 7’’ 8mm 3000 units
50
20
20
25
5
200
1.4
3.0
2
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDS=10V,VGS=4.5V
ID =250mAnC
Qg
Qgs
Qgd
0.4
0.06
0.06
0.6
2N7002
Notes: a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
+
-
+
-
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3
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
.
.
.
9.0
8.0 7.0
6.0
5.0
VGS=10V
3.0
0 1 2 3 45
2
1.5
1
0.5
0
ID - Drain Current(A)
Figure 1. On - Region Characteristics
-VDS Drain -to-Source Voltage(V)
Figure2 .On-Resistance Variation With Gate
Voltage and Drain Current
ID Drain Current(A)
0 0.4 0.8 1.2 1.6 2.0
5
4
3
2
1
0
VGS=4.0V 4.5
5.0
6.0
7.0 8.0
10
VGS =10V
ID =250mA
RDS(on) On-Resistance (Ω)
(Nromalized)
Figure 3. On - Resistance Variation with
T emperature
TJ - Junction Temperature(℃)
- 50 0 - 25 25 50 125 100 75 150
2
1.75
1.5
1.25
1
0.5
0.75
RDS(on) On-Resistance(Ω)RDS(on) On-Resistance (Ω)
(Nromalized)
Figure4 .On-Resistance Variation With Drain
Current and Temperature
ID Drain Current(A)
0 0.4 0.8 1.2 1.6 2
VGS=10V
3
2.5
2
1.5
1
0.5
0
T
J
= 125℃
25℃
-55℃
Figure 5. T ransfer Characteristics
VGS(Volts)
ID - Drain Current(A)
VDS =10V TJ=-55℃25℃
125℃
0 2 46 8 10
2
1.6
1.2
0.8
0.4
0
Tj Junction Temperature(℃)
Figure 6.Gate Threshold Variation With
Temperature
Vth Normalized
Gate-Source Threshold Voltage
-50 -25 0 25 50 75 100 125 150
1.1
1.05
1
0.95
0.9
0.85
0.8
VDS=VGS
ID=1mA
2N7002
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4
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
D u t y C y c l e , D = t / t
1
2
R ( t ) = r ( t ) * R
R
=
( S e e D a t a s h e e t )
J A J A
J A
T - T = P * R ( t )
J A A
J
P
( p k )
t
1
t
2
0 . 0 0 5
0 . 0 1
0 . 0 5
0 . 1
0 . 5
1
2
3
θ
θ θ
θ
.
VSD Body Diode Forward Voltage(V)
Figure 8.Body Diode Forward Voltage Variation
with Temperature
TJ Junction Temperature(℃)
Figure 7.Breakdown Voltage Variation
with Temperature
IS Reverse Drain Current(A)
BVDSS Normalized
Drain-Source Breakdown Voltage(V)
1.1
1.075
1.05
1.025
1
0.975
0.95
0.925
ID =250μA
-50 -25 0 25 50 75 100 125 150
VGS=0V
125℃
25℃
-55℃
2
1
0.5
0.1
0.05
0.01
0.005
0.001
0.2 0.4 0.6 0.8 11.2 1.4
Capacitance(pF)
VDS Drain-to-Source Voltage(V)
Figure 9. Capacitance Characteristics
1 2 3 510 20 30 50
60
40
20
10
5
2
1
f=1MHz
VGS=0V
Ciss
Coss
Crss
VDS Drain-to-Source Voltage(V)
Figure10 . Maximum Safe Operating Area
ID -Drain Current(A)
RDS(on) Limit
VGS=10V
Single Pulse
TA=25℃DC
10s
1s
100ms
1ms
100us
1 2 510 20 30 60 80
Normalized Effective Transient
Thermal Resistance
Single Pulse
Figure11 . Transient Thermal Response Curve
t1 ,Time(sec)
0.0001 0.001 0.01 0.1 1 10 100 300
1
0.5
0.2
0.1
0.05
0.01
0.002
0.001
D=0.5
0.2
0.1
0.05
0.01
0.01
2N7002
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5
2N7002
Doc.SOT23_3L-071012
E1 E
A1
e
e1
b
D
3
1 2
c
A
T OP VIEW
SIDE VIEW END VIEW
θ
L1 L
SOT23_3Lead
Symbol Min Nom Max
A 0.70 1.15
A1 0.00 0.13
b 0.30 0.50
c 0.20
D 2.80 3.10
E 2.60 3.00
E1 1.40 1.80
e 0.95 BSC
e1 1.90 BSC
L 0.40 REF
L1 0.54 REF
θ 0 º º
8 º
1.00
0.40
0.08 0.13
2.90
2.80
1.60
5
Unit:mm
---
Notes:
(1) All dimensions are in millimeters.Angles in degrees.
(2)
(3)
Package body sizes exclude mold flash and gate burrs.
Complies with JEDEC TO-236.
Package Outline
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