2N7002 Datasheet. Www.s Manuals.com. Stanson

User Manual: Marking of electronic components, SMD Codes S7, S72, S72**, S780. Datasheets 2N7002, SD103BW, SST177, SiS780DN.

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2N7002
N Channel Enhancement Mode MOSFET

300mA

PIN CONFIGURATION
SOT-23

3








D




G

S

1
1.Gate

FEATURE




60V/0.30A, RDS(ON) = 5Ω @VGS = 10V(Typ.)
60V/0.25A, RDS(ON) = 7Ω@VGS = 4.5V
Super high density cell design for extremely
low RDS(ON)
Exceptional on-resistance and Maximum DC
current capability
SOT-23 package design

2
2.Source

3.Drain

PART MARKING
SOT-23

3

S72YW
1

2

Y : Year Code W : Process Code

1
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
2N7002 2008. V1

2N7002
N Channel Enhancement Mode MOSFET

300mA

ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted )

Parameter

Symbol

Typical

Unit

Drain-Source Voltage

VDSS

60

V

Gate-Source Voltage

VGSS

±20

V

ID

0.3

A

IDM

1.0

A

PD

0.35

W

TJ

150

℃

Storgae Temperature Range

TSTG

-55/150

℃

Thermal Resistance-Junction to Ambient

RθJA

375

Continuous Drain CurrentTJ=150℃)

TA=25℃

Pulsed Drain Current
Power Dissipation

TA=25℃

Operation Junction Temperature

℃/W

2
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
2N7002 2008. V1

2N7002
N Channel Enhancement Mode MOSFET

300mA
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )

Parameter

Symbol

Condition

Min

V(BR)DSS

VGS=0V,ID= 250uA

60

VGS(th)

VDS=VGS,ID= 250uA

0.8

IGSS

Typ Max

Unit

Static
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain
Current

IDSS

V
2.5

V

VDS=0V,VGS=±12V

±100

nA

VDS= 45V,VGS=0V

1

VDS= 45V,VGS=0V
TJ=125℃

10

IsD(on)

On-State Drain Current
On-State Drain Current
(plsed)

IsDM( 2 )

Drain-source On-Resistance

RDS(on)

VGS=10.0V,ID=0.50A
VGS=4.5V,ID= 0.25A

2.50
3.30

Forward Transconductance

Gfs(1)

VDS=10V,ID= 0.5A

0.6

Diode Forward Voltage

VSD(1)

IS=0.12A,VGS=0V

0.85

1.5

1.4

2.0

uA

0.35
A
1.4
6.0
7.0

Ω

S
V

Dynamic
Total Gate Charge

Qg

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

Input Capacitance

Ciss

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Turn-On Time

td(on)

Turn-Off Time

VDS=30V, VGS=4.5V
ID≡1.0A

0.8

nC

0.5
43
VDS=25V, f=1MHz,
VGS=0

pF

20
6

VDD=30V
ID=0.5A
VGS=4.5V
RG=4.7Ω

tr

td(off)
tf

6
15

nS

6

13

7

9

3
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
2N7002 2008. V1

2N7002
N Channel Enhancement Mode MOSFET

300mA
TYPICAL CHARACTERICTICS (25℃ Unless noted)

4
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
2N7002 2008. V1

2N7002
N Channel Enhancement Mode MOSFET

300mA
TYPICAL CHARACTERICTICS

5
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
2N7002 2008. V1

2N7002
N Channel Enhancement Mode MOSFET

300mA
TYPICAL CHARACTERICTICS

6
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
2N7002 2008. V1

2N7002
N Channel Enhancement Mode MOSFET

300mA
TIPYCAL TESTING CIRCUIT

7
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
2N7002 2008. V1

2N7002
N Channel Enhancement Mode MOSFET

300mA
SOT-23 PACKAGE OUTLINE

8
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
2N7002 2008. V1

www.s-manuals.com



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