2N7002 Datasheet. Www.s Manuals.com. Stanson
User Manual: Marking of electronic components, SMD Codes S7, S72, S72**, S780. Datasheets 2N7002, SD103BW, SST177, SiS780DN.
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2N7002
N Channel Enhancement Mode MOSFET
300mA
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
2N7002 2008. V1
1
PIN CONFIGURATION
SOT-23
1.Gate 2.Source 3.Drain
PART MARKING
SOT-23
Y : Year Code W : Process Code
FEATURE
60V/0.30A, RDS(ON) = 5Ω @VGS = 10V(Typ.)
60V/0.25A, RDS(ON) = 7Ω@VGS = 4.5V
Super high density cell design for extremely
low RDS(ON)
Exceptional on-resistance and Maximum DC
current capability
SOT-23 package design
3
1
2
D
G
S
3
1
2
S72YW
2N7002
N Channel Enhancement Mode MOSFET
300mA
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
2N7002 2008. V1
2
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted )
Parameter Symbol Typical Unit
Drain-Source Voltage VDSS 60 V
Gate-Source Voltage VGSS ±20 V
Continuous Drain CurrentTJ=150℃)
TA=25℃ ID 0.3
A
Pulsed Drain Current IDM 1.0 A
Power Dissipation TA=25℃ PD 0.35 W
Operation Junction Temperature TJ 150 ℃
Storgae Temperature Range TSTG -55/150 ℃
Thermal Resistance-Junction to Ambient RθJA 375 ℃/W
2N7002
N Channel Enhancement Mode MOSFET
300mA
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
2N7002 2008. V1
3
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Parameter Symbol
Condition Min
Typ
Max
Unit
Static
Drain-Source Breakdown
Voltage V(BR)DSS
VGS=0V,ID= 250uA 60
V
Gate Threshold Voltage VGS(th) VDS=VGS,ID= 250uA
0.8
2.5
V
Gate Leakage Current IGSS VDS=0V,VGS=±12V ±100
nA
VDS= 45V,VGS=0V 1
Zero Gate Voltage Drain
Current IDSS VDS= 45V,VGS=0V
TJ=125℃ 10
uA
On-State Drain Current
On-State Drain Current
(plsed)
IsD(on)
IsDM( 2 )
0.35
1.4
A
Drain-source On-Resistance RDS(on)
VGS=10.0V,ID=0.50A
VGS=4.5V,ID= 0.25A
2.50
3.30
6.0
7.0
Ω
Forward Transconductance Gfs(1) VDS=10V,ID= 0.5A 0.6
S
Diode Forward Voltage VSD(1) IS=0.12A,VGS=0V 0.85
1.5 V
Dynamic
Total Gate Charge Qg 1.4
2.0
Gate-Source Charge Qgs 0.8
Gate-Drain Charge Qgd
VDS=30V, VGS=4.5V
ID≡1.0A
0.5
nC
Input Capacitance Ciss 43
Output Capacitance Coss 20
Reverse Transfer Capacitance
Crss
VDS=25V, f=1MHz,
VGS=0
6
pF
6
Turn-On Time td(on)
tr 15
6 13
Turn-Off Time td(off)
tf
VDD=30V
ID=0.5A
VGS=4.5V
RG=4.7Ω
7 9
nS
2N7002
N Channel Enhancement Mode MOSFET
300mA
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
2N7002 2008. V1
4
TYPICAL CHARACTERICTICS (25℃ Unless noted)
2N7002
N Channel Enhancement Mode MOSFET
300mA
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
2N7002 2008. V1
5
TYPICAL CHARACTERICTICS
2N7002
N Channel Enhancement Mode MOSFET
300mA
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
2N7002 2008. V1
6
TYPICAL CHARACTERICTICS
2N7002
N Channel Enhancement Mode MOSFET
300mA
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
2N7002 2008. V1
7
TIPYCAL TESTING CIRCUIT
2N7002
N Channel Enhancement Mode MOSFET
300mA
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
2N7002 2008. V1
8
SOT-23 PACKAGE OUTLINE
