2N7002 Datasheet. Www.s Manuals.com. Taitron
User Manual: Marking of electronic components, SMD Codes 7002, 7005, 702, 702⚫, 702*, 703 *, 7030L, 704, 705, 709, 709**, 70N10L, 70T. Datasheets 2N7002, 2N7002-G, 2N7002DW, 2N7002E, 2N7002K, 2N7002L, 2N7002MTF, 2V7002K, 2V7002L, FAN7005M, FCX705, G709RCUf, G709T1Uf, L2N7002LT1G, MTN138ZN3, MTN7002N3, MTN7002ZHN3, MTNK1N3, MTNK2N3, PH7030L, SPB70N10L, SPI70N10L, SPP70N10L, TK71570AS.
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Enhancement Mode MOSFET (N-Channel) 2N7002 Enhancement Mode MOSFET (N-Channel) Features • • • • • High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability RoHS Compliance SOT-23 Mechanical Data SOT-23, Plastic Package Case: Terminals: Weight: Solderable per MIL-STD-202G, Method 208 0.008 gram Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description 2N7002 Unit Conditions VDSS Drain-Source Voltage 60 V VDGR Drain-Gate Voltage (RGS≤1MΩ) 60 V VGSS Gate-Source Voltage Continuous ±20 V VGSM Gate-Source Voltage Non-repetitive (tp≤50µS) ±40 V 115 mA TC=25 ˚C 75 mA TC=100 ˚C 800 mA 225 mW TA=25 ˚C 1.8 mW/° C Derate above 25 ˚C 556 ° C/W 300 mW TA=25 ˚C 2.4 mW/° C Derate above 25 ˚C 417 ° C/W Junction Temperature -55 to +150 °C Storage Temperature Range -55 to +150 °C ID Drain Current Continuous (Note 1) IDM Drain Current Pulsed (Note 2) PD Total Device Dissipation FR-5 Board (Note 3) RthJA PD RthJA TJ TSTG Max. Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate (Note 4) Max. Thermal Resistance, Junction to Ambient Note: 1. The Power Dissipation of thepackage may result in a lower continuous drain current. TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com Tel: (800)-TAITRON Fax: (800)-TAITFAX (800)-824-8766 (800)-824-8329 (661)-257-6060 (661)-257-6415 Rev. B/AH Page 1 of 6 Enhancement Mode MOSFET (N-Channel) 2N7002 2. PulseTest: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0%. 3. FR-5=1.0 x 0.75 x 0.062 in. 4. Alumina=0.4 x 0.3 x 0.025 in 99.5% alumina. Electrical Characteristics (T Ambient=25ºC unless noted otherwise) Off Characteristics Symbol Description V(BR)DSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Min. Typ. Max. Unit Conditions 60 - - V VGS=0V, ID=10µA - - 1 - - 500 VDS=60V, VGS=0V μA VDS=60V, VGS=0V, TJ=125 ˚C IGSSF Gate-Body Leakage, Forward - - 0.1 VDS=0V, VGS=20V IGSSR Gate-Body Leakage, Reverse - - -0.1 Min. Typ. Max. Unit Conditions 1.0 1.6 2.0 V VDS=VGS, ID=250μA - 1.4 7.5 - 1.7 13.5 - 1.8 7.5 VGS=5V, ID=50mA - 2.4 13.5 VGS=5V, ID=50mA, TJ=125 ˚C - 0.6 3.75 - 0.09 0.375 On State Drain Current 500 2700 - mA VGS=10V, VDS≥2VDS(ON) Forward Transconductance 80 320 - mS VDS≥2VDS(ON), ID=200mA VDS=0V, VGS=-20V On Characteristics (Note 5) Symbol VGS(th) RDS(ON) VDS(ON) ID(ON) gFS Description Gate Threshold Voltage Drain-Source ON Resistance Drain-Source ON Voltage VGS=10V, ID=500mA Ω V VGS=10V, ID=500mA, TJ=125 ˚C VGS=10V, ID=500mA VGS=5V, ID=50mA Rev. B/AH www.taitroncomponents.com Page 2 of 6 Enhancement Mode MOSFET (N-Channel) 2N7002 Dynamic Characteristics (T Ambient=25ºC unless noted otherwise) Symbol Description Min. Typ. Max. Ciss Input Capacitance - 17 50 Crss Reverse Transfer Capacitance - 2.5 5.0 Coss Output Capacitance - 10 25 Unit Conditions pF VDS=25V, VGS=0V, f=1MHz Unit Conditions Switching Characteristics (T Ambient=25ºC unless noted otherwise) Symbol Description Min. Typ. Max. ton Turn-On Delay Time - 7 20 toff Turn-Off Delay Time - 11 40 nS VDD=25V, RL=50Ω ID=500mA, VGS=10V, RG=25Ω Drain-Source Diode Ratings and Maximum Ratings Symbol Min. Typ. Max. Unit Continuous Drain-Source Diode Forward Current - - 115 mA IDM Pulsed Drain-Source Diode Forward Current - - 800 mA VSD Source-Drain Forward Voltage - 0.88 1.5 V ID Description Conditions VGS=0V, ID=115mA Note: 5. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% Rev. B/AH www.taitroncomponents.com Page 3 of 6 Enhancement Mode MOSFET (N-Channel) 2N7002 Typical Characteristics Curves Fig.2- Transfer Characteristics Drain Current ID (A) Drain Current ID (A) Fig.1- Ohmic Region Gate-Source Voltage VGS (V) Fig.3- Temperature vs. Static Drain-Source OnResistance Junction Temperature TJ (° C) Gate-Source Threshold Voltage VGS(th) (V) (Normalized) Static Drain-Source On-Resistance RDS(ON) (Ω) (Normalized) Drain-Source Voltage VDS (V) Fig.4- Temperature vs. Gate Threshold Voltage Junction Temperature TJ (° C) Rev. B/AH www.taitroncomponents.com Page 4 of 6 Enhancement Mode MOSFET (N-Channel) 2N7002 Equivalent Circuit Marking Information: X: Date Code Rev. B/AH www.taitroncomponents.com Page 5 of 6 Enhancement Mode MOSFET (N-Channel) 2N7002 Dimensions in mm How to contact us: SOT-23 US HEADQUARTERS 28040 WEST HARRISON PARKWAY, VALENCIA, CA 91355-4162 Tel: (800) TAITRON (800) 824-8766 (661) 257-6060 Fax: (800) TAITFAX (800) 824-8329 (661) 257-6415 Email: taitron@taitroncomponents.com Http://www.taitroncomponents.com TAITRON COMPONENTS MEXICO, S.A .DE C.V. BOULEVARD CENTRAL 5000 INTERIOR 5 PARQUE INDUSTRIAL ATITALAQUIA, HIDALGO C.P. 42970 MEXICO Tel: +52-55-5560-1519 Fax: +52-55-5560-2190 TAITRON COMPONENTS INCORPORATED REPRESENTAÇÕES DO BRASIL LTDA RUA DOMINGOS DE MORAIS, 2777, 2.ANDAR, SALA 24 SAÚDE - SÃO PAULO-SP 04035-001 BRAZIL Tel: +55-11-5574-7949 Fax: +55-11-5572-0052 TAITRON COMPONENTS INCORPORATED, SHANGHAI REPRESENTATIVE OFFICE METROBANK PLAZA, 1160 WEST YAN’ AN ROAD, SUITE 1503, SHANGHAI, 200052, CHINA Tel: +86-21-5424-9942 Fax: +86-21-5424-9931 Rev. B/AH www.taitroncomponents.com Page 6 of 6 www.s-manuals.com
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