2N7002 Datasheet. Www.s Manuals.com. Taitron
User Manual: Marking of electronic components, SMD Codes 7002, 7005, 702, 702⚫, 702*, 703 *, 7030L, 704, 705, 709, 709**, 70N10L, 70T. Datasheets 2N7002, 2N7002-G, 2N7002DW, 2N7002E, 2N7002K, 2N7002L, 2N7002MTF, 2V7002K, 2V7002L, FAN7005M, FCX705, G709RCUf, G709T1Uf, L2N7002LT1G, MTN138ZN3, MTN7002N3, MTN7002ZHN3, MTNK1N3, MTNK2N3, PH7030L, SPB70N10L, SPI70N10L, SPP70N10L, TK71570AS.
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Page Count: 7
Rev. B/AH
2N7002
TAITRON COMPONEN
T
S INCORPORATED www.taitroncomponents.com
Page 1
of 6
Tel: (800)
-
TAITRON (800)
-
824
-
8766 (661)
-
257
-
6060
Fax: (800)-TAITFAX (800)-824-8329 (661)-257-6415
Enhancement Mode
MOSFET (N-Channel)
Enhancement Mode MOSFET (N-Channel)
Features
• High density cell design for low RDS(ON)
• Voltage controlled small signal switch
• Rugged and reliable
• High saturation current capability
• RoHS Compliance
Mechanical Data
Case: SOT-23, Plastic Package
Terminals: Solderable per MIL-STD-202G, Method 208
Weight: 0.008 gram
Maximum Ratings (T
Ambient
=25ºC unless noted otherwise)
Symbol Description 2N7002 Unit Conditions
VDSS Drain-Source Voltage 60 V
VDGR Drain-Gate Voltage (RGS≤1MΩ) 60 V
VGSS Gate-Source Voltage Continuous ±20 V
VGSM Gate-Source Voltage Non-repetitive (tp≤50µS) ±40 V
115 mA TC=25 ˚C
ID Drain Current Continuous (Note 1) 75 mA TC=100 ˚C
IDM Drain Current Pulsed (Note 2) 800 mA
225 mW TA=25 ˚C
PD Total Device Dissipation FR-5 Board (Note 3) 1.8 mW/° C Derate above 25 ˚C
RthJA Max. Thermal Resistance, Junction to Ambient 556 ° C/W
300 mW TA=25 ˚C
PD Total Device Dissipation Alumina Substrate (Note 4) 2.4 mW/° C Derate above 25 ˚C
RthJA Max. Thermal Resistance, Junction to Ambient 417 ° C/W
TJ Junction Temperature -55 to +150 ° C
TSTG Storage Temperature Range -55 to +150 ° C
Note: 1. The Power Dissipation of thepackage may result in a lower continuous drain current.
SOT-23
Rev. B/AH
2N7002
Enhancement Mode MOSFET
(
N-Channel
)
www.taitroncomponents.com Page 2
of 6
2. PulseTest: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0%.
3. FR-5=1.0 x 0.75 x 0.062 in.
4. Alumina=0.4 x 0.3 x 0.025 in 99.5% alumina.
Electrical Characteristics (T
Ambient
=25ºC unless noted otherwise)
Off Characteristics
Symbol Description Min. Typ. Max. Unit Conditions
V(BR)DSS Drain-Source Breakdown Voltage 60 - - V VGS=0V, ID=10µA
- - 1 VDS=60V, VGS=0V
IDSS Zero Gate Voltage Drain Current - - 500 VDS=60V, VGS=0V, TJ=125 ˚C
IGSSF Gate-Body Leakage, Forward - - 0.1 VDS=0V, VGS=20V
IGSSR Gate-Body Leakage, Reverse - - -0.1
μA
VDS=0V, VGS=-20V
On Characteristics (Note 5)
Symbol Description Min. Typ. Max. Unit Conditions
VGS(th) Gate Threshold Voltage 1.0 1.6 2.0 V VDS=VGS, ID=250μA
- 1.4 7.5 VGS=10V, ID=500mA
- 1.7 13.5 VGS=10V, ID=500mA, TJ=125 ˚C
- 1.8 7.5 VGS=5V, ID=50mA
RDS(ON) Drain-Source ON Resistance
- 2.4 13.5
Ω
VGS=5V, ID=50mA, TJ=125 ˚C
- 0.6 3.75 VGS=10V, ID=500mA
VDS(ON) Drain-Source ON Voltage
- 0.09 0.375
V
VGS=5V, ID=50mA
ID(ON) On State Drain Current 500 2700 - mA VGS=10V,
VDS≥2VDS(ON)
gFS Forward Transconductance 80 320 - mS VDS≥2VDS(ON), ID=200mA
Rev. B/AH
2N7002
Enhancement Mode MOSFET
(
N-Channel
)
www.taitroncomponents.com Page 3
of 6
Dynamic Characteristics (T
Ambient
=25ºC unless noted otherwise)
Symbol Description Min. Typ. Max. Unit Conditions
Ciss Input Capacitance - 17 50
Crss Reverse Transfer Capacitance - 2.5 5.0
Coss Output Capacitance - 10 25
pF VDS=25V, VGS=0V,
f=1MHz
Switching Characteristics (T
Ambient
=25ºC unless noted otherwise)
Symbol Description Min. Typ. Max. Unit Conditions
ton Turn-On Delay Time - 7 20
toff Turn-Off Delay Time - 11 40
nS
VDD=25V, RL=50Ω
ID=500mA, VGS=10V,
RG=25Ω
Drain-Source Diode Ratings and Maximum Ratings
Symbol Description Min. Typ. Max. Unit Conditions
ID Continuous Drain-Source Diode Forward
Current - - 115 mA
IDM Pulsed Drain-Source Diode Forward Current - - 800 mA
VSD Source-Drain Forward Voltage - 0.88 1.5 V VGS=0V, ID=115mA
Note: 5. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
Rev. B/AH
2N7002
Enhancement Mode MOSFET
(
N-Channel
)
www.taitroncomponents.com Page 4
of 6
Fig.1- Ohmic Region
Drain-Source Voltage VDS (V)
Fig.3- Temperature vs. Static Drain-Source On-
Resistance
Junction Temperature TJ (° C)
Fig.2- Transfer Characteristics
Gate-Source Voltage VGS (V)
Fig.4- Temperature vs. Gate Threshold Voltage
Junction Temperature TJ (° C)
Typical Characteristics Curves
Drain Current ID (A)
Static Drain-Source On-Resistance RDS(ON) (Ω)
(
Normalized
)
Drain Current ID (A)
Gate-Source Threshold Voltage VGS(th) (V)
(Normalized)
Rev. B/AH
2N7002
Enhancement Mode MOSFET
(
N-Channel
)
www.taitroncomponents.com Page 5
of 6
Equivalent Circuit
Marking Information:
X: Date Code
Rev. B/AH
2N7002
Enhancement Mode MOSFET
(
N-Channel
)
www.taitroncomponents.com Page 6
of 6
Dimensions in mm
How to contact us:
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28040 WEST HARRISON PARKWAY, VALENCIA, CA 91355-4162
Tel: (800) TAITRON (800) 824-8766 (661) 257-6060
Fax: (800) TAITFAX (800) 824-8329 (661) 257-6415
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Http://www.taitroncomponents.com
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Tel: +86-21-5424-9942
Fax: +86-21-5424-9931
SOT-23
