2N7002T Datasheet. Www.s Manuals.com. Fairchild

User Manual: Marking of electronic components, SMD Codes AA, AA**, AA***, AA-, AA-**, AA-***, AA=***, AAA, AAA***, AAC, AAD, AAE, AAE**, AAF, AAFI, AAG, AAH**, AAHC, AAHO, AAI**, AAIK, AAJ**, AAJ***, AAJF*, AAJI, AAJJ, AAL***, AAM***, AAN***, AANC, AAP, AAQ, AAR, AAS, AASQ, AASR, AAT***, AATJ, AATK, AATL, AATM, AAU, AAU**, AAW, AAX, Aa. Datasheets 2N7002T, 2SD1757K, 74AHC1G00GW, AME8804AEEY, BCW60A, BCX51, BD48E23G, BD48K23G, BL3406B-1.0V, BL9641, LR9641, MAX1736EUT41-T, MAX1736EUT42-T, MAX2644, MAX4335EXT-T, MAX4336EXT

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2N7002T
N-Channel Enhancement Mode Field Effect Transistor
Features
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Ultra-Small Surface Mount Package
• Lead Free/RoHS Compliant

D

S

G

SOT - 523F
Marking : AA

Absolute Maximum Ratings *
Symbol

Ta = 25°C unless otherwise noted

Parameter

Value

Units

VDSS

Drain-Source Voltage

60

V

VDGR

Drain-Gate Voltage RGS ≤ 1.0MΩ

60

V

VGSS

Gate-Source Voltage

±20
±40

V

ID

Drain Current

115
73
800

mA

150

°C

-55 to +150

°C

Value

Units

Continuous
Pulsed
Continuous
Continuous @ 100°C
Pulsed

TJ

Junction Temperature

TSTG

Storage Temperature Range

* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.

Thermal Characteristics
Symbol

Parameter

PD

Total Device Dissipation
Derating above TA = 25°C

200
1.6

mW
mW/°C

RθJA

Thermal Resistance, Junction to Ambient *

625

°C/W

* Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimun land pad size,

© 2007 Fairchild Semiconductor Corporation
2N7002T Rev. A

www.fairchildsemi.com
1

2N7002T — N-Channel Enhancement Mode Field Effect Transistor

October 2007

Symbol

TC = 25°C unless otherwise noted

Parameter

Test Condition

MIN

TYP

MAX

Units

60

78

-

V

Off Characteristics (Note1)
BVDSS

Drain-Source Breakdown Voltage

VGS= 0V, ID=10uA

IDSS

Zero Gate Voltage Drain Current

VDS= 60V, VGS= 0V
VDS= 60V, VGS= 0V, @TC = 125°C

-

0.001
7

1.0
500

uA

IGSS

Gate-Body Leakage

VGS= ±20V, VDS= 0V

-

0.2

±10

nA

1.0

1.76

2.0

V

-

1.6
2.53

7.5
13.5

Ω

On Characteristics (Note1)
VGS(th)

Gate Threshold Voltage

RDS(ON)

Satic Drain-Source On-Resistance VGS = 5V, ID = 0.05A,
VGS = 10V, ID = 0.5A, @Tj = 125°C

VDS = VGS, ID = 250uA

ID(ON)

On-State Drain Current

VGS = 10V, VDS= 7.5V

0.5

1.43

-

A

gFS

Forward Transconductance

VDS = 10V, ID = 0.2A

80

356.5

-

mS

-

37.8

50

pF

-

12.4

25

pF

-

6.5

7.0

pF

-

5.85

20

-

12.5

20

Dynamic Characteristics
Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

VDS = 25V, VGS= 0V, f = 1.0MHz

Switching Characteristics
tD(ON)

Turn-On Delay Time

tD(OFF)

Turn-Off Delay Time

VDD = 30V, ID = 0.2A, VGEN= 10V
RL = 150Ω, RGEN = 25Ω

ns

Note1 : Short duration test pulse used to minimize self-heating effect.

© 2007 Fairchild Semiconductor Corporation
2N7002T Rev. A

www.fairchildsemi.com
2

2N7002T — N-Channel Enhancement Mode Field Effect Transistor

Electrical Characteristics

Figure 1. On-Region Characteristics

Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current
3.0

RDS(on), (Ω)
DRANI-SOURCE ON-RESISTANCE

ID. DRAIN-SOURCE CURRENT(A)

1.6

VGS = 10V

1.4
1.2

5V

1.0

4V

0.8
0.6
0.4

3V

0.2

VGS = 3V

4V

4.5V

5V
6V

2.5

2.0

10V
9V

1.5

8V
7V

2V
1.0
0.0

0.0
0

1

2

3

4

5

6

7

8

9

10

0.2

0.4

Figure 3. On-Resistance Variation with
Temperature

RDS(on), (Ω)
DRANI-SOURCE ON-RESISTANCE

RDS(on) (Ω)
DRANI-SOURCE ON-RESISTANCE

VGS = 10V
ID = 500 mA

2.0

1.5

1.0

2.5

ID = 500 mA
2.0

ID = 50 mA
1.5

1.0

0.5
-50

0

50

100

2

150

4

o

1.0
o

TJ = -25 C
o

0.8

150 C
o

25 C
o

125 C
0.6
o

75 C
0.4

0.2

4

10

5

2.5

VGS = VDS

2.0

ID = 1 mA
ID = 0.25 mA
1.5

1.0
-50

0.0
3

8

Figure 6. Gate Threshold Variation with
Temperature
Vth, Gate-Source Threshold Voltage (V)

Figure 5. Transfer Characteristics

VDS = 10V

6

VGS. GATE-SOURCE VOLTAGE (V)

TJ. JUNCTION TEMPERATURE( C)

ID. DRAIN-SOURCE CURRENT(A)

1.0

3.0

2.5

6

0

50

100

150
o

TJ. JUNCTION TEMPERATURE( C)

VGS. GATE-SOURCE VOLTAGE (V)

© 2007 Fairchild Semiconductor Corporation
2N7002T Rev. A

0.8

Figure 4. On-Resistance Variation with
Gate-Source Voltage

3.0

2

0.6

ID. DRAIN-SOURCE CURRENT(A)

VDS. DRAIN-SOURCE VOLTAGE (V)

www.fairchildsemi.com
3

2N7002T — N-Channel Enhancement Mode Field Effect Transistor

Typical Performance Characteristics

Figure 7. Reverse Drain Current Variation with
Diode Forward Voltage and Temperature

Figure 8. Power Derating

250

o

150 C

PC[mW], POWER DISSIPATION

IS Reverse Drain Current, [mA]

VGS = 0 V

100

o

25 C
10
o

-55 C

1
0.0

0.2

0.4

0.6

0.8

150

100

50

0

1.0

0

VSD, Body Diode Forward Voltage [V]

25

50

75

100

125

150

175

o

Ta[ C], AMBIENT TEMPERATURE

© 2007 Fairchild Semiconductor Corporation
2N7002T Rev. A

200

www.fairchildsemi.com
4

2N7002T — N-Channel Enhancement Mode Field Effect Transistor

Typical Performance Characteristics

2N7002T — N-Channel Enhancement Mode Field Effect Transistor

Package Dimensions

SOT-523F

Dimensions in Millimeters

© 2007 Fairchild Semiconductor Corporation
2N7002T Rev. A

www.fairchildsemi.com
5

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As used herein:
1.

2.

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which, (a) are intended for surgical implant into the body, or
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Definition of Terms
Datasheet Identification

Product Status

Definition

Advance Information

Formative or In Design

This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.

No Identification Needed

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This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve design.

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This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I30

© 2007 Fairchild Semiconductor Corporation
2N7002T Rev. A

www.fairchildsemi.com
6

2N7002T N-Channel Enhancement Mode Field Effect Transistor

TRADEMARKS

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Subject                         : 2N7002T - Datasheet. www.s-manuals.com.
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