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User Manual: Marking of electronic components, SMD Codes AA, AA**, AA***, AA-, AA-**, AA-***, AA=***, AAA, AAA***, AAC, AAD, AAE, AAE**, AAF, AAFI, AAG, AAH**, AAHC, AAHO, AAI**, AAIK, AAJ**, AAJ***, AAJF*, AAJI, AAJJ, AAL***, AAM***, AAN***, AANC, AAP, AAQ, AAR, AAS, AASQ, AASR, AAT***, AATJ, AATK, AATL, AATM, AAU, AAU**, AAW, AAX, Aa. Datasheets 2N7002T, 2SD1757K, 74AHC1G00GW, AME8804AEEY, BCW60A, BCX51, BD48E23G, BD48K23G, BL3406B-1.0V, BL9641, LR9641, MAX1736EUT41-T, MAX1736EUT42-T, MAX2644, MAX4335EXT-T, MAX4336EXT

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2N7002T — N-Channel Enhancement Mode Field Effect Transistor

2N7002T Rev. A 1

October 2007

2N7002T

N-Channel Enhancement Mode Field Effect Transistor

Features

• Low On-Resistance

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Ultra-Small Surface Mount Package

• Lead Free/RoHS Compliant

Absolute Maximum Ratings * Ta = 25°C unless otherwise noted

* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.

Thermal Characteristics

* Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimun land pad size,

Symbol Parameter Value Units

VDSS Drain-Source Voltage 60 V

VDGR Drain-Gate Voltage RGS ≤ 1.0MΩ 60 V

VGSS Gate-Source Voltage Continuous

Pulsed

±20

±40 V

ID Drain Current Continuous

Continuous @ 100°C

Pulsed

115

800

TJ Junction Temperature 150 °C

TSTG Storage Temperature Range -55 to +150 °C

Symbol Parameter Value Units

PDTotal Device Dissipation

Derating above TA = 25°C

200

1.6

mW/°C

RθJA Thermal Resistance, Junction to Ambient * 625 °C/W

SOT - 523F

Marking : AA

2N7002T — N-Channel Enhancement Mode Field Effect Transistor

2N7002T Rev. A 2

Electrical Characteristics TC = 25°C unless otherwise noted

Off Characteristics (Note1)

On Characteristics (Note1)

Dynamic Characteristics

Switching Characteristics

Note1 : Short duration test pulse used to minimize self-heating effect.

Symbol Parameter Test Condition MIN TYP MAX Units

BVDSS Drain-Source Breakdown Voltage VGS= 0V, ID=10uA 60 78 - V

IDSS Zero Gate Voltage Drain Current VDS= 60V, VGS= 0V

VDS= 60V, VGS= 0V, @TC = 125°C

-0.001

1.0

500 uA

IGSS Gate-Body Leakage VGS= ±20V, VDS= 0V -0.2 ±10 nA

VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250uA 1.0 1.76 2.0 V

RDS(ON) Satic Drain-Source On-Resistance VGS = 5V, ID = 0.05A,

VGS = 10V, ID = 0.5A, @Tj = 125°C

1.6

2.53

7.5

13.5 Ω

ID(ON) On-State Drain Current VGS = 10V, VDS= 7.5V 0.5 1.43 - A

gFS Forward Transconductance VDS = 10V, ID = 0.2A 80 356.5 -mS

Ciss Input Capacitance

VDS = 25V, VGS= 0V, f = 1.0MHz

-37.8 50 pF

Coss Output Capacitance -12.4 25 pF

Crss Reverse Transfer Capacitance -6.5 7.0 pF

tD(ON) Turn-On Delay Time VDD = 30V, ID = 0.2A, VGEN= 10V

RL = 150Ω, RGEN = 25Ω

-5.85 20 ns

tD(OFF) Turn-Off Delay Time -12.5 20

2N7002T — N-Channel Enhancement Mode Field Effect Transistor

2N7002T Rev. A 3

Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with Gate

Voltage and Drain Current

Figure 3. On-Resistance Variation with

Temperature Figure 4. On-Resistance Variation with

Gate-Source Voltage

Figure 5. Transfer Characteristics Figure 6. Gate Threshold Variation with

Temperature

012345678910

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

VGS = 10V

ID. DRAIN-SOURCE CURRENT(A)

VDS. DRAIN-SOURCE VOLTAGE (V)

0.0 0.2 0.4 0.6 0.8 1.0

1.0

1.5

2.0

2.5

3.0

(Ω)

10V

4V 4.5V

VGS = 3V

RDS(on),

DRANI-SOURCE ON-RESISTANCE

ID. DRAIN-SOURCE CURRENT(A)

-50 0 50 100 150

0.5

1.0

1.5

2.0

2.5

3.0

(Ω)

VGS = 10V

ID = 500 mA

RDS(on)

DRANI-SOURCE ON-RESISTANCE

TJ. JUNCTION TEMPERATURE(oC)

246810

1.0

1.5

2.0

2.5

3.0

ID = 500 mA

(Ω)

ID = 50 mA

RDS(on),

DRANI-SOURCE ON-RESISTANCE

VGS. GATE-SOURCE VOLTAGE (V)

23456

0.0

0.2

0.4

0.6

0.8

1.0

VDS = 10V

75oC

125oC

150oC

25oC

TJ = -25oC

ID. DRAIN-SOURCE CURRENT(A)

VGS. GATE-SOURCE VOLTAGE (V)

-50 0 50 100 150

1.0

1.5

2.0

2.5

ID = 0.25 mA

ID = 1 mA

VGS = VDS

Vth, Gate-Source Threshold Voltage (V)

TJ. JUNCTION TEMPERATURE(oC)

2N7002T — N-Channel Enhancement Mode Field Effect Transistor

2N7002T Rev. A 4

Typical Performance Characteristics

Figure 7. Reverse Drain Current Variation with

Diode Forward Voltage and Temperature Figure 8. Power Derating

100

0.0 0.2 0.4 0.6 0.8 1.0

-55oC

VGS = 0 V

150oC

25oC

VSD, Body Diode Forward Voltage [V]

IS Reverse Drain Current, [mA]

0 25 50 75 100 125 150 175

100

150

200

250

PC[mW], POWER DISSIPATION

Ta[oC], AMBIENT TEMPERATURE

2N7002T — N-Channel Enhancement Mode Field Effect Transistor

2N7002T Rev. A 5

SOT-523F

Package Dimensions

Dimensions in Millimeters

2N7002T N-Channel Enhancement Mode Field Effect Transistor2N7002T

TRADEMARKS

The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and

is not intended to be an exhaustive list of all such trademarks.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS

HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF

THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE

UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF

FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE

PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR

SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems

which, (a) are intended for surgical implant into the body, or

(b) support or sustain life, and (c) whose failure to perform

when properly used in accordance with instructions for use

provided in the labeling, can be reasonably expected to result

in significant injury to the user.

2. A critical component is any component of a life support

device or system whose failure to perform can be reasonably

expected to cause the failure of the life support device or

system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

ACEx®

Build it Now™

CorePLUS™

CROSSVOLT™

CTL™

Current Transfer Logic™

EcoSPARK®

Fairchild®

Fairchild Semiconductor®

FACT Quiet Series™

FACT®

FAST®

FastvCore™

FPS™

FRFET®

Global Power ResourceSM

Green FPS™

Green FPS™ e-Series™

GTO™

i-Lo™

IntelliMAX™

ISOPLANAR™

MegaBuck™

MICROCOUPLER™

MicroFET™

MicroPak™

Motion-SPM™

OPTOLOGIC®

OPTOPLANAR®

PDP-SPM™

Power220®

Power247®

POWEREDGE®

Power-SPM™

PowerTrench®

Programmable Active Droop™

QFET®

QS™

QT Optoelectronics™

Quiet Series™

RapidConfigure™

SMART START™

SPM®

STEALTH™

SuperFET™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SyncFET™

The Power Franchise®

TinyBoost™

TinyBuck™

TinyLogic®

TINYOPTO™

TinyPower™

TinyPWM™

TinyWire™

µSerDes™

UHC®

UniFET™

VCX™

Datasheet Identification Product Status Definition

Advance Information Formative or In Design This datasheet contains the design specifications for product development.

Specifications may change in any manner without notice.

Preliminary First Production This datasheet contains preliminary data; supplementary data will be pub-

lished at a later date. Fairchild Semiconductor reserves the right to make

changes at any time without notice to improve design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves

the right to make changes at any time without notice to improve design.

Obsolete Not In Production This datasheet contains specifications on a product that has been discontin-

ued by Fairchild semiconductor. The datasheet is printed for reference infor-

mation only.

Rev. I30

2N7002T Rev. A 6

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