2SA1015 Datasheet. Www.s Manuals.com. Galaxy
User Manual: Marking of electronic components, SMD Codes BA, BA*, BA**, BA***, BA-***, BA1, BAP, BAQ, BAR, BAR**, BAS**, BAT**, Ba. Datasheets 2SA1015, 2SA1015LT1, 2SB1132, 2SB1132-P, 2SB1132-Q, 2SB1132-R, AME5110AEEV150Y , AME5110AEEV150Z, AME5110AEEV180Y, AME5110AEEV180Z, AME5110BEEVADJY, AME5110BEEVADJZ, BCW61A, BCX54, BCX54TA, BD4719G, BD48E37G, BD48K37G, BZT52H-C4V7, DAN217, MMBZ5241B, PAM2301, RP130Q211A, RT9011-BMPJ6, RT9011-KMGQWC, RT9013-33PQW, RT9193-29PU5, Si1413EDH, TPS3831L30DQNR.
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BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES 2SA1015 Pb z Complementary To 2SC1815. z Excellent HFE Linearity. z High total power dissipation. z Collector current up to 150mA. z Collector-Emitter voltage BVCEO=-50V. Lead-free APPLICATIONS z Low frequency , low noise amplifier. SOT-23 ORDERING INFORMATION Type No. Marking Package Code 2SA1015 BA SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -150 mA PC Collector Dissipation 200 mW Tj,Tstg Junction and Storage Temperature -55~150 ℃ Document number: BL/SSSTC011 Rev.A www.galaxycn.com 1 BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SA1015 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN Collector-base breakdown voltage V(BR)CBO IC=-100μA,IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO IC=-0.1mA,IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE=-10μA,IC=0 -5 V Collector cut-off current ICBO VCB=-50V,IE=0 -0.1 μA Collector cut-off current ICEO VCE=-50V,IB=0 -0.1 μA Emitter cut-off current IEBO VEB=-5V,IC=0 -0.1 μA DC current gain hFE VCE=-6V,IC=-2mA Collector-emitter saturation voltage VCE(sat) IC=-100 mA, IB=- 10mA -0.3 V Base-emitter saturation voltage VBE(sat) IC=-100 mA, IB= -10mA -1.1 V Transition frequency fT VCE=-10V, IC= -1mA f=30MHz CLASSIFICATION OF TYP MAX 130 400 80 MHz hFE(1) Rank L H Range 130-200 200-400 Document number: BL/SSSTC011 Rev.A UNIT www.galaxycn.com 2 BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SA1015 TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Document number: BL/SSSTC011 Rev.A www.galaxycn.com 3 BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SA1015 PACKAGE OUTLINE Plastic surface mounted package SOT-23 SOT-23 Dim Min Max A 2.85 2.95 B 1.25 1.35 C 1.0Typical D 0.37 0.43 E 0.35 0.48 G 1.85 1.95 H 0.02 0.1 J K 0.1Typical 2.35 2.45 All Dimensions in mm SOLDERING FOOTPRINT Unit : mm PACKAGE INFORMATION Device Package Shipping 2SA1015 SOT-23 3000/Tape&Reel Document number: BL/SSSTC011 Rev.A www.galaxycn.com 4 www.s-manuals.com
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