2SA1015 Datasheet. Www.s Manuals.com. Galaxy
User Manual: Marking of electronic components, SMD Codes BA, BA*, BA**, BA***, BA-***, BA1, BAP, BAQ, BAR, BAR**, BAS**, BAT**, Ba. Datasheets 2SA1015, 2SA1015LT1, 2SB1132, 2SB1132-P, 2SB1132-Q, 2SB1132-R, AME5110AEEV150Y , AME5110AEEV150Z, AME5110AEEV180Y, AME5110AEEV180Z, AME5110BEEVADJY, AME5110BEEVADJZ, BCW61A, BCX54, BCX54TA, BD4719G, BD48E37G, BD48K37G, BZT52H-C4V7, DAN217, MMBZ5241B, PAM2301, RP130Q211A, RT9011-BMPJ6, RT9011-KMGQWC, RT9013-33PQW, RT9193-29PU5, Si1413EDH, TPS3831L30DQNR.
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BL Galaxy Electrical Production specification
Silicon Epitaxial Planar Transistor 2SA1015
Document number: BL/SSSTC011 www.galaxycn.com
Rev.A 1
FEATURES
z Complementary To 2SC1815.
z Excellent HFE Linearity.
z High total power dissipation.
z Collector current up to 150mA.
z Collector-Emitter voltage BVCEO=-50V.
APPLICATIONS
z Low frequency , low noise amplifier. SOT-23
ORDERING INFORMATION
Type No. Marking Package Code
2SA1015 BA SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Value Units
VCBO Collector-Base Voltage -50 V
VCEO Collector-Emitter Voltage -50 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -150 mA
PC Collector Dissipation 200 mW
Tj,Tstg Junction and Storage Temperature -55~150 ℃
Pb
Lead-free
BL Galaxy Electrical Production specification
Silicon Epitaxial Planar Transistor 2SA1015
Document number: BL/SSSTC011 www.galaxycn.com
Rev.A 2
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Symbol Test conditions MIN
TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=-100μA,IE=0 -50 V
Collector-emitter breakdown voltage V(BR)CEO I
C=-0.1mA,IB=0 -50 V
Emitter-base breakdown voltage V(BR)EBO I
E=-10μA,IC=0 -5
V
Collector cut-off current ICBO VCB=-50V,IE=0 -0.1 μA
Collector cut-off current ICEO VCE=-50V,IB=0 -0.1 μA
Emitter cut-off current IEBO VEB=-5V,IC=0 -0.1 μA
DC current gain hFE VCE=-6V,IC=-2mA 130 400
Collector-emitter saturation voltage VCE(sat) IC=-100 mA, IB=- 10mA -0.3 V
Base-emitter saturation voltage VBE(sat) IC=-100 mA, IB= -10mA -1.1 V
Transition frequency fT
VCE=-10V, IC= -1mA
f=30MHz 80 MHz
CLASSIFICATION OF hFE(1)
Rank L H
Range 130-200 200-400
BL Galaxy Electrical Production specification
Silicon Epitaxial Planar Transistor 2SA1015
Document number: BL/SSSTC011 www.galaxycn.com
Rev.A 3
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
BL Galaxy Electrical Production specification
Silicon Epitaxial Planar Transistor 2SA1015
Document number: BL/SSSTC011 www.galaxycn.com
Rev.A 4
PACKAGE OUTLINE
Plastic surface mounted package SOT-23
SOLDERING FOOTPRINT
Unit : mm
PACKAGE INFORMATION
SOT-23
Dim Min Max
A 2.85 2.95
B 1.25 1.35
C 1.0Typical
D 0.37 0.43
E 0.35 0.48
G 1.85 1.95
H 0.02 0.1
J 0.1Typical
K 2.35 2.45
All Dimensions in mm
Device Package Shipping
2SA1015 SOT-23 3000/Tape&Reel
