2SB1197K Datasheet. Www.s Manuals.com. Shandong

User Manual: Marking of electronic components, SMD Codes AH, AH*, AH**, AH***, AH-, AH-**, AH-***, AH=***, AHP, AHQ, AHR, Ah. Datasheets 2SA1759, 2SB1197, 2SB1197K, 2SD2098, 2SD2908, BCX53, BD48E30G, BD48K30G, MAX6314US43D1-T, MMBZ5231B, RP130Q181A5, RT9011-MMGJ6, RT9011-MMPJ6, RT9012-GSPQV, RT9013-33PQV, RT9013B-15PQWA, RT9014A-JPPQV, RT9161-31PX, RT9198-32PU5, RT9284BPJ5E, RT9701CBL, RT9701GBL, RT9701PBL, RT9819C-28PU3, Si1450DH.

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2SB1197K

SEMICONDUCTOR
TECHNICAL DATA

Shandong Yiguang Electronic Joint stock Co., Ltd

PNP EPITAXIAL SILICON TRANSISTOR

LOW FREQUENCY TRANSISTOR
* Feature:

Package:SOT-23

(1) Low Vce(sat)
Vce≤-0.5V
(Ic/Ib= -0.5A/-50mA)
(2) Ic= -0.8A
(3) Complements the 2SD1781K

ABSOLUTE MAXIMUM RATINGS at Ta=25℃
Characteristic

Symbol

Rating

Unit

Collector-Emitter Voltage

Vceo

-32

V

Collector-Base Voltage

Vcbo

-40

V

Collector Current

Ic

-0.8

A

Collector Dissipation Ta=25℃*

PD

200

mW

Junction Temperature

Tj

150

℃

Storage Temperature

Tstg

-55-150

℃

PIN:

1

2

3

B

E

C

STYLE
NO.1

ELECTRICAL CHARACTERISTICS at Ta=25℃
Characteristic

Symbol

Min

Typ

Max

Unit

Test Conditions

Collector-Base Breakdown Voltage

BVcbo

-40

V

Ic= -50uA

Collector-Emitter Breakdown Voltage#

BVceo

-32

V

Ic= -1mA

Emitter-Base Breakdown Voltage

BVebo

-5

V

Ie= -50uA

Collector-Base Cutoff Current

Icbo

-0.5

uA

Vcb= -20V

Emitter-Base Cutoff Current

Iebo

-0.5

uA

Veb= -4V

DC Current Gain

Hfe

Collector-Emitter Saturation Voltage

Vce(sat)

Output Capacitance

Cob

Current Gain-Bandwidth Product

120

fT

390
12

50

Vce= -3V Ic= -100mA

-0.5

V

Ic= -500mA Ib= -50mA

30

PF

Vcb= -10V Ie=0 f=1MHz

200

MHz

Vce= -5V Ie= 50mA
f=100MHZ

*

Total Device Dissipation : FR=1X0.75X0.062in Board,Derate 25℃.

#

Pulse Test: Pulse Width ≤300uS,Duty cycle ≤2%

DEVICE MARKING:
2SB1197K=AHR

SEMICONDUCTOR
Shandong Yiguang Electronic Joint stock Co., Ltd

TECHNICAL DATA

2SB1197K
PNP EPITAXIAL SILICON TRANSISTOR

2SB1197K

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