2SB1197K Datasheet. Www.s Manuals.com. Shandong
User Manual: Marking of electronic components, SMD Codes AH, AH*, AH**, AH***, AH-, AH-**, AH-***, AH=***, AHP, AHQ, AHR, Ah. Datasheets 2SA1759, 2SB1197, 2SB1197K, 2SD2098, 2SD2908, BCX53, BD48E30G, BD48K30G, MAX6314US43D1-T, MMBZ5231B, RP130Q181A5, RT9011-MMGJ6, RT9011-MMPJ6, RT9012-GSPQV, RT9013-33PQV, RT9013B-15PQWA, RT9014A-JPPQV, RT9161-31PX, RT9198-32PU5, RT9284BPJ5E, RT9701CBL, RT9701GBL, RT9701PBL, RT9819C-28PU3, Si1450DH.
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SEMICONDUCTOR 2SB1197K
Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR
LOW FREQUENCY TRANSISTOR
* Feature:
(1) Low Vce(sat)
Vce≤-0.5V
(Ic/Ib= -0.5A/-50mA)
(2) Ic= -0.8A
(3) Complements the 2SD1781K
ABSOLUTE MAXIMUM RATINGS at Ta=25℃
Characteristic Symbol Rating Unit
Collector-Emitter Voltage Vceo -32 V
Collector-Base Voltage Vcbo -40 V
Collector Current Ic -0.8 A
Collector Dissipation Ta=25℃* PD 200 mW
Junction Temperature Tj 150 ℃
Storage Temperature Tstg -55-150 ℃
ELECTRICAL CHARACTERISTICS at Ta=25℃
Characteristic Symbol Min Typ Max Unit Test Conditions
Collector-Base Breakdown Voltage BVcbo -40
V Ic= -50uA
Collector-Emitter Breakdown Voltage# BVceo -32
V Ic= -1mA
Emitter-Base Breakdown Voltage BVebo -5
V Ie= -50uA
Collector-Base Cutoff Current Icbo -0.5 uA Vcb= -20V
Emitter-Base Cutoff Current Iebo -0.5 uA Veb= -4V
DC Current Gain Hfe 120 390 Vce= -3V Ic= -100mA
Collector-Emitter Saturation Voltage Vce(sat) -0.5 V Ic= -500mA Ib= -50mA
Output Capacitance Cob 12 30 PF Vcb= -10V Ie=0 f=1MHz
Current Gain-Bandwidth Product fT 50 200 MHz Vce= -5V Ie= 50mA
f=100MHZ
* Total Device Dissipation : FR=1X0.75X0.062in Board,Derate 25℃.
# Pulse Test: Pulse Width ≤300uS,Duty cycle ≤2%
DEVICE MARKING:
2SB1197K=AHR
Package:SOT-23
PIN:
STYLE
1 2 3
NO.1 B E C
SEMICONDUCTOR 2SB1197K
Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR
2SB1197K
