2SB1260 Datasheet. Www.s Manuals.com. Galaxy

User Manual: Marking of electronic components, SMD Codes ZL, ZL-***, ZL0*, ZL1*, ZL2*, ZL3*, ZL4*, ZL5*, ZL6*, ZL7*, ZL8*, ZL9*, ZLA*, ZLB*, ZLC*, ZLD*, ZLE*, ZLF*, ZLH*, ZLK*, ZLL*, ZLM*, ZLN*, ZLP*, ZLR*, ZLS*, ZLT*, ZLU*, ZLV*, ZLX*, ZLY*, ZLZ*. Datasheets 2SB1260, BZX284-C22, CZMK5.1, PDZ16B, RT9818C-33PB, TPS3839G18DQNR, TZT5V1CW, XZ5121B020M, XZ5121B021M, XZ5121B022M, XZ5121B023M, XZ5121B024M, XZ5121B025M, XZ5121B026M, XZ5121B027M, XZ5121B028M, XZ5121B029M, XZ5121B030M, XZ5121B031M, XZ5121B032M, XZ5121B033M, XZ512

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BL Galaxy Electrical

Production specification

Power Transistor(-80V,-1A)

2SB1260

FEATURES
z

Pb

High breakdown voltage and

Lead-free

high current.
BVCEO=-80V,IC=-1A
z

Good hFEVLinearity.

z

Low VCE(sat).

z

Complements the 2SD1898.

APPLICATIONS
z

Epitaxial planar type PNP silicon transistor

SOT-89

ORDERING INFORMATION
Type No.

Marking

Package Code

2SB1206

ZL

SOT-89

MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

-80

V

VCEO

Collector-Emitter Voltage

-80

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current –DC
-Pulse

-1
-2

mA

PD

Total Device Dissipation

500

mW

Tj,Tstg

Junction and Storage Temperature

-55 to+150

℃

Document number: BL/SSSTG045
Rev.A

www.galaxycn.com
1

BL Galaxy Electrical

Production specification

Power Transistor(-80V,-1A)

2SB1260

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter

Symbol

Test conditions

MIN

MAX

Collector-base breakdown voltage

V(BR)CBO

IC=-50μA IE=0

-80

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=-1mA IB=0

-80

V

Emitter-base breakdown voltage

V(BR)EBO

IE=-50μA IC=0

-5

V

Collector cut-off current

ICBO

VCB=-60V IE=0

-1

μA

Emitter cut-off current

IEBO

VEB=-4V,IC=0

-1

μA

DC current gain

hFE

VCE=-3V IC=-100μA

Collector-emitter saturation voltage

VCE(sat)

IC=-500mA IB=-50mA

Transition frequency

fT

VCE=-5V,IC=-50mA,
f=30MHz

Output Capacitance

Cobo

VCB=-10V f=1.0MHz IE=0

82

390
-0.4

-

V

100

MHz

25

pF

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Document number: BL/SSSTG045
Rev.A

UNIT

www.galaxycn.com
2

BL Galaxy Electrical

Production specification

Power Transistor(-80V,-1A)

2SB1260

PACKAGE OUTLINE
Plastic surface mounted package

SOT-89

SOT-89
Dim

Min

Max

A

4.5

4.7

B

2.3

2.7

C

1.5Typical

D

0.35

0.55

E

1.4

1.6

F

0.4

0.6

H

1.55

1.75

J
K

0.4Typical
4.15

4.25

All Dimensions in mm

SOLDERING FOOTPRINT

Unit:mm

PACKAGE

INFORMATION

Device

Package

Shipping

2SB1260

SOT-89

1000/Tape&Reel

Document number: BL/SSSTG045
Rev.A

www.galaxycn.com
3

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