2SC5103 Datasheet. Www.s Manuals.com. Rohm

User Manual: Marking of electronic components, SMD Codes C5, C5-**, C5-***, C50, C5103, C5344, C546A, C546B, C547, C547B, C547C, C5591, C5826, C5880, C5=***. Datasheets 2SC5103, 2SC5344, 2SC5591, 2SC5826, 2SC5880, BC546A, BC546B, BC547, BC547B, BC547C, BZT52H-C68, BZX585-B3V6, MMSZ5225, OPA350EA, RT8020DPQW, RT8259GJ6, RT9013B-33PU5, UDZS30B.

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2SC5103
Transistors

High speed switching transistor (60V, 5A)
2SC5103

Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage

Symbol
VCBO
VCEO
VEBO

Collector current
Collector power
dissipation
Junction temperature
Storage temperature

IC
PC
Tj
Tstg

Limits
100
60
5
5
10
1
10
150
−55 to +150

ROHM : CPT3
EIAJ : SC-63

Unit
V
V
V
A(DC)
A(Pulse) ∗
W
W(Tc=25°C)
°C
°C

5.1
6.5

0.65
1.5

0.5

0.8Min.

C0.5

(1) Base
(2) Collector
(3) Emitter

2.3

0.9

1.5

2.3

5.5

0.9

2.3

(3) (2) (1)

1.0
0.5

zAbsolute maximum ratings (Ta=25°C)

0.75

zExternal dimensions (Unit : mm)

zFeatures
1) Low VCE(sat) (Typ. 0.15V at IC / IB = 3 / 0.15A)
2) High speed switching (tf : Typ. 0.1 µs at IC = 3A)
3) Wide SOA. (safe operating area)
4) Complements the 2SA1952.

2.5
9.5

∗ Single pulse Pw=100ms

zPackaging specifications and hFE
Type
Package
hFE
Code
Basic ordering unit (pieces)

2SC5103
CPT3
Q
TL
2500

zElectrical characteristics (Ta=25°C)
Symbol

Min.

Typ.

Max.

Unit

Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current

BVCBO
BVCEO
BVEBO
ICBO
IEBO

Collector-emitter saturation voltage

VCE(sat)

Base-emitter saturation voltage

VBE(sat)

100
60
5
−
−
−
−
−
−
120
40
−
−
−
−
−

−
−
−
−
−
0.15
−
−
−
−
−
120
80
−
−
0.1

−
−
−
10
10
0.3
0.5
1.2
1.5
270
−
−
−
0.3
1.5
0.3

V
V
V
µA
µA
V
V
V
V
−
−
MHz
pF
µs
µs
µs

Parameter

DC current transfer ratio

hFE

Transition frequency
Output capacitance
Turn-on time
Storage time
Fall time

fT
Cob
ton
tstg
tf

Conditions
IC = 50µA
IC = 1mA
IE = 50µA
VCB = 100V
VEB = 5V
IC/IB = 3A/0.15A
IC/IB = 4A/0.2A
IC/IB = 3A/0.15A
IC/IB = 4A/0.2A
VCE/IC = 2V/1A
VCE/IC = 2V/3A
VCB = 10V , IE = −0.5A , f = 30MHz
VCE = 10V , IE = 0A , f = 1MHz
IC = 3A , RL = 10Ω
IB1 = −IB2 = 0.15A
VCC 30V

∗
∗
∗
∗

∗

∗ Measured using pulse current.

Rev.A

1/3

2SC5103
Transistors
zElectrical characteristics curves
10
5

35mA

25mA

3

20mA
15mA

2

10mA
IB= 5mA

1

0

1

2

3

2
1
0.5
0.2
0.1
0.05
0.02
0.01

0.001

0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

Ta= −25°C

1

VBE(sat)

0.5
25°C

100°C

0.2
0.1
0.05

Ta=100°C
0.02
0.01
0.01 0.02

VCE(sat)
−25°C

0.05 0.1 0.2

25°C

0.5

1

2

5 10

Ta=25°C
VCE=10V

500
200
100
50
20
10
5
2
1
−0.001−0.002

−0.005 −0.01 −0.02

−0.05 −0.1 −0.2

−0.5

2

tstg

1
0.5
0.2

tf

0.1

ton

0.05
0.02
0.01
0.05

0.1

0.2

0.5

1

2

5

COLLECTOR CURRENT : IC (A)

Fig.7 Switching characteristics

10

5

−1

DC

Pw=100ms∗

10ms∗

1
0.5

0.2

Tc=25°C
0.1 ∗Single
nonrepetitive
0.05 pulse
0.5
1
2

5

10

20

1

2

5 10

Ta=25°C
IE=0A
f=1MHz

5000
2000
1000
500
200
100
50
20
10
0.1 0.2

0.5

1

2

5

10

20

50 100

COLLECTOR TO BASE VOLTAGE : VCB (V)

Ic MAX (Pulse∗)

2

0.5

10000

50

100

COLLECTOR TO EMITTER VOLTAGE : VCE (V)

Fig.8 Safe operating area

Fig.6 Collector output capacitance vs.
collector-base voltage

TRANSIENT THERMAL RESISTANCE : Rth(°C/W)

COLLECTOR CURRENT : IC (A)

TURN ON TIME : ton (µs)
STRAGE TIME : tstg (µs)
FALL TIME
: tf (µs)

10

IC=20 IB1= −20 IB2
PULSE

0.05 0.1 0.2

Fig.3 DC current gain vs. collector current

EMITTER CURRENT : IE (A)

COLLECTOR CURRENT : IC (A )

5

5
2
1
0.01 0.02

Fig.5 Gain bandwidth product vs.emitter current
Fig.4 Collector-emitter saturation voltage
Base-emitter saturation voltage −collector current

10

10

COLLECTOR CURRENT : IC (A)

1000

TRANSITION FREQUENCY : fT(MHz)

COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
BASE SATURATION VOLTAGE
: VBE(sat) (V)

2

20

1.6

Fig.1 Ground emitter output characteristics Fig.2 Ground emitter propagation characteristics

IC/IB=20

−25°C

25°C

50

BASE TO EMITTER VOLTAGE : VBE (V)

5

Ta=100°C

100

0.005

COLLECTOR TO EMITTER VOLTAGE : VCE (V)

10

200

0.002

Ta=25°C
4
5

0

VCE=2V

500

DC CURRENT GAIN : hFE

30mA

4

1000

VCE= 2V

COLLECTOR OUTPUT CAPACITWANCE : Cob(pF)

40mA

45mA

Ta=1
00°C
25°C
−25°C

A

m

50

COLLECTOR CURRENT : IC (A)

COLLECTOR CURRENT : IC (A)

5

10000

(1)Using infinite heat sink
(2)Unmounted

1000
(2)
100
(1)
10
1
0.1
0.01
0.001

0.01

0.1

1

10

100

1000

TIME : t (s)

Fig.9 Transient thermal resistance

Rev.A

2/3

2SC5103
Transistors

RL=10Ω
IB

VIN

IB1

IC

IB2

IB1
T.U.T.

− 30V
VCC ∼

IB2

IC

90%

IC

PW
PW=50µs
duty cycle

10%

1%
−VBB

ton

tstg

tf

Fig.10 Switching characteristic circuit

Rev.A

3/3

Appendix

Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.

The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.

Appendix1-Rev1.1

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