2SC5103 Datasheet. Www.s Manuals.com. Rohm
User Manual: Marking of electronic components, SMD Codes C5, C5-**, C5-***, C50, C5103, C5344, C546A, C546B, C547, C547B, C547C, C5591, C5826, C5880, C5=***. Datasheets 2SC5103, 2SC5344, 2SC5591, 2SC5826, 2SC5880, BC546A, BC546B, BC547, BC547B, BC547C, BZT52H-C68, BZX585-B3V6, MMSZ5225, OPA350EA, RT8020DPQW, RT8259GJ6, RT9013B-33PU5, UDZS30B.
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2SC5103
Transistors
Rev.A 1/3
High speed switching transistor (60V, 5A)
2SC5103
zFeatures
1) Low VCE(sat) (Typ. 0.15V at IC / IB = 3 / 0.15A)
2) High speed switching (tf : Typ. 0.1 µs at IC = 3A)
3) Wide SOA. (safe operating area)
4) Complements the 2SA1952.
zAbsolute maximum ratings (Ta=25°C)
Parameter Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
100
60
5
5
1
150
−55 to +150
Unit
V
V
V
A(DC)
10
∗
A(Pulse)
W
10 W(Tc=25°C)
°C
°C
Single pulse Pw=100ms
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Junction temperature
Storage temperature
Collector power
dissipation
∗
zPackaging specifications and hFE
Type 2SC5103
CPT3
Q
TL
2500
Package
h
FE
Code
Basic ordering unit (pieces)
zExternal dimensions (Unit : mm)
2.3
0.5
1.0
0.5
9.5
2.5
0.8Min.
1.5
6.5
2.3
(2)
(3)
C0.5
0.65
0.9
(1)
0.75
2.3
0.9
1.5
5.5
(3) Emitter
(2) Collector
(1) Base
ROHM : CPT3
EIAJ : SC-63
5.1
zElectrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
BV
CBO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
100
5
−
−
−
120
−
−
−
−
−
−
0.15
−
120
80
−
−
10
10
0.3
270
−
−
V
V
µA
µA
V
−
MHz
pF
I
C
=
50µA
BV
CEO
60 −−VI
C
=
1mA
I
E
=
50µA
V
CB
=
100V
V
EB
=
5V
I
C
/I
B
=
3A/0.15A
V
BE(sat)
−−
1.2 V I
C
/I
B
=
3A/0.15A
−−
0.5 V I
C
/I
B
=
4A/0.2A
−−
1.5 V
∗
∗
∗
∗
∗
I
C
/I
B
=
4A/0.2A
V
CE
/I
C
=
2V/1A
40 −−−V
CE
/I
C
=
2V/3A
V
CB
=
10V , I
E
= −
0.5A , f
=
30MHz
V
CE
=
10V , I
E
=
0A , f
=
1MHz
t
on
−−0.3 µsI
C
=
3A , R
L
=
10Ω
t
stg
−−1.5 µsI
B1
=
−I
B2
=
0.15A
t
f
−0.1 0.3 µsV
CC
30V
Transition frequency
Output capacitance
Turn-on time
Storage time
Fall time
Base-emitter saturation voltage
Collector-emitter saturation voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current
transfer ratio
Collector-base breakdown voltage
Measured using pulse current.
∗
2SC5103
Transistors
Rev.A 2/3
zElectrical characteristics curves
COLLECTOR CURRENT : IC (A)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.1 Ground emitter output characteristics
0
5
4
3
2
1
123450
Ta
=
25
°C
I
B
= 5mA
10mA
15mA
20mA
25mA
30mA
35mA
40mA
45mA
50mA
BASE TO EMITTER VOLTAGE : VBE
(V)
COLLECTOR CURRENT : IC (A)
Fig.2
Ground emitter propagation characteristics
0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
2
5
10
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.60
Ta
=
100°C
25
°C
−25
°C
V
CE
=
2V
1000
200
100
20
10
1
0.01 0.02 0.05
0.1 0.2 0.5 1 2 5 10
2
5
50
500
DC CURRENT GAIN : hFE
COLLECTOR CURRENT : I
C
(A)
Fig.3 DC current gain vs. collector current
Ta=
100
°C
25
°C
−25
°C
V
CE
=2V
BASE SATURATION VOLTAGE
: VBE(sat) (V)
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
COLLECTOR CURRENT : I
C
(A )
Fig.4
Collector-emitter saturation voltage
Base-emitter saturation voltage −
collector current
10
2
1
0.2
0.1
0.01
0.01 0.02 0.05
0.1 0.2 0.5 1 2 5 10
0.02
0.05
0.5
5
Ta= −
25
°C
Ta=
100
°C
25
°C
25
°C
−25
°C
100
°C
I
C
/I
B
=20
V
BE(sat)
V
CE(sat)
COLLECTOR OUTPUT CAPACITWANCE : Cob(pF)
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
Fig.6 Collector output capacitance vs.
collector-base voltage
10000
2000
1000
200
100
10
0.1 0.2 0.5 1 2 5 10 20 50 100
20
50
500
5000
Ta=25
°C
I
E
=0A
f=1MHz
1000
200
100
20
10
1
−0.001−0.002 −0.005 −0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1
2
5
50
500
TRANSITION FREQUENCY : f
T
(MHz)
EMITTER CURRENT : I
E
(A)
Fig.5
Gain bandwidth product vs.emitter current
Ta=25
°C
V
CE
=10V
STRAGE TIME : tstg (
µs
)
FALL TIME : tf (
µs
)
TURN ON TIME : ton (
µs
)
COLLECTOR CURRENT : I
C
(A)
Fig.7 Switching characteristics
0.01
0.02
0.05
0.1
0.2
0.5
1
2
5
10
0.05 0.1 0.2 0.5 1 2 5 10
I
C
=20 I
B1
= −20 I
B2
PULSE
tstg
tf
ton
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
COLLECTOR CURRENT : I
C
(A)
Fig.8 Safe operating area
0.5 1 2 5 10
0.05
0.1
0.2
0.5
1
2
5
10
20 50 100
Tc
=
25
°C
Ic
MAX
(Pulse∗)
∗Single
nonrepetitive
pulse
Pw
=100ms∗
10ms∗
DC
TIME : t
(s)
TRANSIENT THERMAL RESISTANCE
: Rth(°C/W)
Fig.9 Transient thermal resistance
0.1
0.01
0.001 0.01 0.1 1 10 100 1000
1
10
10000
1000
100
(1)Using infinite heat sink
(2)Unmounted
(1)
(2)
2SC5103
Transistors
Rev.A 3/3
V
IN
P
W
P
W
=50
µs
duty cycle 1
%
−V
BB
I
B1
I
C
I
B2
T.U.T.
R
L
=10
Ω
V
CC
30V
∼
−
I
B1
I
B2
I
C
90%
10%
tstgton tf
I
B
Fig.10 Switching characteristic circuit
I
C
Appendix
Appendix1-Rev1.1
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
