AT49F512 512K (64K X 8) 5 Volt Only Flash Memory 49F512

AT49F512 EPROM 49F512 Race Drivin' Y2K Fix

User Manual: 49F512

Open the PDF directly: View PDF PDF.
Page Count: 12

DownloadAT49F512 512K (64K X 8) 5-volt Only Flash Memory 49F512
Open PDF In BrowserView PDF
Features
• Single Voltage Operation
•
•
•
•
•
•
•
•
•

– 5V Read
– 5V Reprogramming
Fast Read Access Time - 50 ns
Internal Program Control and Timer
8K Bytes Boot Block With Lockout
Fast Erase Cycle Time - 10 seconds
Byte-by-Byte Programming - 10 µs/Byte
Hardware Data Protection
DATA Polling For End Of Program Detection
Low Power Dissipation
– 30 mA Active Current
– 100 µA CMOS Standby Current
Typical 10,000 Write Cycles

512K (64K x 8)
5-volt Only
Flash Memory

Description
The AT49F512 is a 5-volt-only in-system programmable and erasable Flash Memory.
Its 512K of memory is organized as 65,536 words by 8 bits. Manufactured with
Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 50
ns with a power dissipation of just 165 mW over the commercial temperature range.
When the device is deselected, the CMOS standby current is less than 100 µA.
To allow for simple in-system reprogrammability, the AT49F512 does not require high
input voltages for programming. Five-volt-only commands determine the read and
programming operation of the device. Reading data out of the device is similar to
reading from an EPROM. Reprogramming the AT49F512 is performed by erasing the
entire 512K of memory and then programming on a byte by byte basis. The typical
byte programming time is a fast 10 µs. The end of a program cycle can be optionally
(continued)

Pin Configurations
Addresses

CE

Chip Enable

OE

Output Enable

WE

Write Enable

I/O0 - I/O7

Data Inputs/Outputs

NC

No Connect

NC
NC
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND

VSOP Top View (8 x 14 mm) or
TSOP Top View (8 x 20 mm)
Type 1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16

32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17

32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17

VCC
WE
NC
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3

512K (64K x 8)
5-volt Only
CMOS Flash
Memory

PLCC Top View
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
A3

A12
A15
NC
NC
VCC
WE
NC

A11
A9
A8
A13
A14
NC
WE
VCC
NC
NC
A15
A12
A7
A6
A5
A4

1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16

A7
A6
A5
A4
A3
A2
A1
A0
I/O0

4
3
2
1
32
31
30

A0 - A15

DIP Top View

5
6
7
8
9
10
11
12
13

29
28
27
26
25
24
23
22
21

14
15
16
17
18
19
20

Function

A14
A13
A8
A9
A11
OE
A10
CE
I/O7

Rev. 1027D–04/99
I/O1
I/O2
GND
I/O3
I/O4
I/O5
I/O6

Pin Name

AT49F512

1

detected by the DATA polling feature. Once the end of a
byte program cycle has been detected, a new access for a
read or program can begin. The typical number of program
and erase cycles is in excess of 10,000 cycles.

The optional 8K bytes boot block section includes a reprogramming write lock out feature to provide data integrity.
The boot sector is designed to contain user secure code,
and when the feature is enabled, the boot sector is permanently protected from being reprogrammed.

Block Diagram

FFFFH
2000H
1FFFH
0000H

Device Operation
READ: The AT49F512 is accessed like an EPROM. When
CE and OE are low and WE is high, the data stored at the
memory location determined by the address pins is
asserted on the outputs. The outputs are put in the high
impedance state whenever CE or OE is high. This dual-line
control gives designers flexibility in preventing bus contention.
ERASURE: Before a byte can be reprogrammed, the 64K
bytes memory array (or 56K bytes if the boot block featured
is used) must be erased. The erased state of the memory
bits is a logical “1”. The entire device can be erased at one
time by using a 6-byte software code. The chip erase code
consists of 6-byte load commands to specific address locations with a specific data pattern (please refer to the Chip
Erase Cycle Waveforms).
After the chip erase has been initiated, the device will internally time the erase operation so that no external clocks
are required. The maximum time needed to erase the
whole chip is tEC. If the boot block lockout feature has been
enabled, the data in the boot sector will not be erased.
BYTE PROGRAMMING: Once the memory array is
erased, the device is programmed (to a logical “0”) on a
byte-by-byte basis. Please note that a data “0” cannot be
programmed back to a “1”; only erase operations can convert “0”s to “1”s. Programming is accomplished via the
internal device command register and is a 4 bus cycle
operation (please refer to the Command Definitions table).
The device will automatically generate the required internal
program pulses.
The program cycle has addresses latched on the falling
edge of WE or CE, whichever occurs last, and the data
2

AT49F512

latched on the rising edge of WE or CE, whichever occurs
first. Programming is completed after the specified tBP cycle
time. The DATA polling feature may also be used to indicate
the end of a program cycle.
BOOT BLOCK PROGRAMMING LOCKOUT: The device
has one designated block that has a programming lockout
feature. This feature prevents programming of data in the
designated block once the feature has been enabled. The
size of the block is 8K bytes. This block, referred to as the
boot block, can contain secure code that is used to bring up
the system. Enabling the lockout feature will allow the boot
code to stay in the device while data in the rest of the
device is updated. This feature does not have to be activated; the boot block’s usage as a write protected region is
optional to the user. The address range of the boot block is
0000H to 1FFFH.
Once the feature is enabled, the data in the boot block can
no longer be erased or programmed. Data in the main
memory block can still be changed through the regular programming method. To activate the lockout feature, a series
of six program commands to specific addresses with specific data must be performed. Please refer to the Command
Definitions table.
BOOT BLOCK LOCKOUT DETECTION: A software
method is available to determine if programming of the boot
block section is locked out. When the device is in the software product identification mode (see Software Product
Identification Entry and Exit sections) a read from address
location 00002H will show if programming the boot block is
locked out. If the data on I/O0 is low, the boot block can be
programmed; if the data on I/O0 is high, the program lock-

AT49F512
out feature has been activated and the block cannot be
programmed. The software product identification code
should be used to return to standard operation.
PRODUCT IDENTIFICATION: The product identification
mode identifies the device and manufacturer as Atmel. It
may be accessed by hardware or software operation. The
hardware operation mode can be used by an external programmer to identify the correct programming algorithm for
the Atmel product.
For details, see Operating Modes (for hardware operation)
or Software Product Identification. The manufacturer and
device code is the same for both modes.
DATA POLLING: The AT49F512 features DATA polling to
indicate the end of a program cycle. During a program
cycle an attempted read of the last byte loaded will result in
the complement of the loaded data on I/O7. Once the program cycle has been completed, true data is valid on all

outputs and the next cycle may begin. DATA polling may
begin at any time during the program cycle.
TOGGLE BIT: In addition to DATA polling the AT49F512
provides another method for determining the end of a program or erase cycle. During a program or erase operation,
successive attempts to read data from the device will result
in I/O6 toggling between one and zero. Once the program
cycle has completed, I/O6 will stop toggling and valid data
will be read. Examining the toggle bit may begin at any time
during a program cycle.
HARDWARE DATA PROTECTION: Hardware features
protect against inadvertent programs to the AT49F512 in
the following ways: (a) VCC sense: if VCC is below 3.8V (typical), the program function is inhibited. (b) Program inhibit:
holding any one of OE low, CE high or WE high inhibits
program cycles. (c) Noise filter: Pulses of less than 15 ns
(typical) on the WE or CE inputs will not initiate a program
cycle.

Command Definition (in Hex)
Command
Sequence

Bus
Cycles

1st Bus
Cycle
Addr

Data

2nd Bus
Cycle

3rd Bus
Cycle

4th Bus
Cycle

6th Bus
Cycle

Addr

Data

Addr

Data

Addr

Data

Addr

Data

Addr

Data

2AAA

55

5555

10

2AAA

55

5555

40

Read

1

Addr

DOUT

Chip Erase

6

5555

AA

2AAA

55

5555

80

5555

AA

Byte Program

4

5555

AA

2AAA

55

5555

A0

Addr

DIN

Boot Block
Lockout(1)

6

5555

AA

2AAA

55

5555

80

5555

AA

Product ID
Entry

3

5555

AA

2AAA

55

5555

90

Product ID
Exit(2)

3

5555

AA

2AAA

55

5555

F0

Product ID
Exit(2)

1

XXXX

F0

Notes:

5th Bus
Cycle

1. The 8K byte boot sector has the address range 0000H to 1FFFH.
2. Either one of the Product ID exit commands can be used.

Absolute Maximum Ratings*
Temperature Under Bias ................................ -55°C to +125°C
Storage Temperature ..................................... -65°C to +150°C
All Input Voltages
(including NC pins)
with Respect to Ground ...................................-0.6V to +6.25V
All Output Voltages
with Respect to Ground .............................-0.6V to VCC + 0.6V

*NOTICE:

Stresses beyond those listed under “Absolute
Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any
other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect device
reliability.

Voltage on OE
with Respect to Ground ...................................-0.6V to +13.5V

3

DC and AC Operating Range
Com.

Operating
Temperature (Case)

Ind.

VCC Power Supply

AT49F512-50

AT49F512-70

AT49F512-90

0°C - 70°C

0°C - 70°C

0°C - 70°C

-40°C - 85°C

-40°C - 85°C

-40°C - 85°C

5V ± 10%

5V ± 10%

5V ± 10%

Operating Modes
Mode

CE

OE

WE

Ai

I/O

Read

VIL

VIL

VIH

Ai

DOUT

Program(2)

VIL

VIH

VIL

Ai

DIN

X

High Z

Standby/Write Inhibit

(1)

VIH

X

X

Program Inhibit

X

X

VIH

Program Inhibit

X

VIL

X

Output Disable

X

VIH

X

VIL

VIL

VIH

High Z

Product Identification
Hardware

A1 - A15 = VIL, A9 = VH, A0 = VIL(3)

Manufacturer Code(4)

A1 - A15 = VIL, A9 = VH, A0 = VIH(3)

Device Code(4)

Software(5)
Notes:

A0 = VIL, A1 - A15 = VIL

Manufacturer Code(4)

A0 = VIH, A1 - A15 = VIL

Device Code(4)

1. X can be VIL or VIH.
2. Refer to AC Programming Waveforms.
3. VH = 12.0V ± 0.5V.
4. Manufacturer Code: 1FH, Device Code: 03H
5. See details under Software Product Identification Entry/Exit.

DC Characteristics
Symbol

Parameter

Condition

ILI

Input Load Current

ILO

Max

Units

VIN = 0V to VCC

10

µA

Output Leakage Current

VI/O = 0V to VCC

10

µA

Com.

100

µA

ISB1

VCC Standby Current CMOS

CE = VCC - 0.3V to VCC

Ind.

300

µA

ISB2

VCC Standby Current TTL

CE = 2.0V to VCC

3

mA

ICC(1)

Com.

30

mA

VCC Active Current

f = 5 MHz; IOUT = 0 mA

Ind.

40

mA

VIL

Input Low Voltage

0.8

V

VIH

Input High Voltage

VOL

Output Low Voltage

IOL = 2.1 mA

VOH1

Output High Voltage

IOH = -400 µA

2.4

V

VOH2

Output High Voltage CMOS

IOH = -100 µA; VCC = 4.5V

4.2

V

Note:

4

Min

2.0

1. In the erase mode, ICC is 90 mA.

AT49F512

V
0.45

V

AT49F512
AC Read Characteristics
Symbol

Parameter

tACC
tCE

AT49F512-50

AT49F512-70

AT49F512-90

Min

Min

Min

Max

Max

Max

Units

Address to Output Delay

50

70

90

ns

(1)

CE to Output Delay

50

70

90

ns

(2)

OE to Output Delay

30

35

0

40

ns

25

0

25

ns

tOE

tDF(3)(4)

CE or OE to Output Float

0

tOH

Output Hold from OE, CE or
Address, whichever occurred first

0

25

0
0

0

ns

AC Read Waveforms(1)(2)(3)(4)

Notes:

1.

CE may be delayed up to tACC - tCE after the address transition without impact on tACC.

2.

OE may be delayed up to tCE - tOE, after the falling edge of CE without impact on tCE or by tACC - tOE after an address change
without impact on tACC.

3.

tDF is specified from OE or CE whichever occurs first (CL = 5 pF).

4.

This parameter is characterized and is not 100% tested.

Input Test Waveforms and
Measurement Level

Output Test Load

tR, tF < 5 ns

Pin Capacitance
f = 1 MHz, T= 25°C(1)
Symbol

Typ

Max

Units

Conditions

CIN

4

6

pF

VIN = 0V

COUT

8

12

pF

VOUT = 0V

Note:

1. This parameter is characterized and is not 100% tested.

5

AC Word Load Characteristics
Symbol

Parameter

Min

tAS, tOES

Address, OE Set-up Time

0

ns

tAH

Address Hold Time

50

ns

tCS

Chip Select Set-up Time

0

ns

tCH

Chip Select Hold Time

0

ns

tWP

Write Pulse Width (WE or CE)

90

ns

tDS

Data Set-up Time

50

ns

tDH, tOEH

Data, OE Hold Time

0

ns

tWPH

Write Pulse Width High

90

ns

AC Byte Load Waveforms
WE Controlled

CE Controlled

6

AT49F512

Max

Units

AT49F512
Program Cycle Characteristics
Symbol

Parameter

Min

Typ

Max

Units

tBP

Byte Programming Time

10

50

µs

tAS

Address Set-up Time

0

ns

tAH

Address Hold Time

50

ns

tDS

Data Set-up Time

50

ns

tDH

Data Hold Time

0

ns

tWP

Write Pulse Width

90

ns

tWPH

Write Pulse Width High

90

ns

tEC

Erase Cycle Time

10

seconds

Program Cycle Waveforms
PROGRAM CYCLE

OE

CE
t

t

WP

t

WPH

BP

WE
t

A0-A15

t
AH

AS

t

5555

5555

2AAA

t

DATA

DH
ADDRESS

DS
55

AA

INPUT
DATA

A0

Chip Erase Cycle Waveforms
OE

CE
t

t

WP

WPH

WE
t

A0-A15

AS

t

t
AH
5555

Note:

5555

5555

2AAA

t

DATA

DH
5555

2AAA

t

DS

AA

55

80

AA

55

10

BYTE 0

BYTE 1

BYTE 2

BYTE 3

BYTE 4

BYTE 5

EC

OE must be high only when WE and CE are both low.

7

Data Polling Characteristics(1)
Symbol

Parameter

Min

tDH

Data Hold Time

tOEH

OE Hold Time

Max

OE to Output Delay

tWR

Write Recovery Time

Units

10

ns

10

ns

(2)

tOE

Notes:

Typ

ns
0

ns

1. These parameters are characterized and not 100% tested.
2. See tOE spec in AC Read Characteristics.

Data Polling Waveforms
WE
CE
tOEH
OE
tDH

tOE

A0-A15

tWR

HIGH Z

I/O7
An

An

An

An

An

Toggle Bit Characteristics(1)
Symbol

Parameter

tDH

Data Hold Time

10

ns

tOEH

OE Hold Time

10

ns

tOE

OE to Output Delay(2)

tOEHP

OE High Pulse

tWR

Write Recovery Time

Notes:

Min

Typ

Max

Units

ns
150

ns

0

ns

1. These parameters are characterized and not 100% tested.
2. See tOE spec in AC Read Characteristics.

Toggle Bit Waveforms(1)(2)(3)

Notes:

8

1.

Toggling either OE or CE or both OE and CE will operate toggle bit. The tOEHP specification must be met by the toggling
input(s)

2.

Begining and ending state of I/O6 will vary.

3.

Any address location may be used but the address should not vary.

AT49F512

AT49F512
Software Product Identification Entry(1)
LOAD DATA AA
TO
ADDRESS 5555

Boot Block
Lockout Enable Algorithm(1)
LOAD DATA AA
TO
ADDRESS 5555

LOAD DATA 55
TO
ADDRESS 2AAA

LOAD DATA 55
TO
ADDRESS 2AAA

LOAD DATA 90
TO
ADDRESS 5555

LOAD DATA 80
TO
ADDRESS 5555

ENTER PRODUCT
IDENTIFICATION
MODE(2)(3)(5)

LOAD DATA AA
TO
ADDRESS 5555

Software Product Identifcation Exit(1)
LOAD DATA AA
TO
ADDRESS 5555

OR

LOAD DATA 55
TO
ADDRESS 2AAA

LOAD DATA 55
TO
ADDRESS 2AAA

LOAD DATA F0
TO
ANY ADDRESS

LOAD DATA 40
TO
ADDRESS 5555

EXIT PRODUCT
IDENTIFICATION
MODE(4)

LOAD DATA F0
TO
ADDRESS 5555

PAUSE 1 second(2)

Notes:
EXIT PRODUCT
IDENTIFICATION
MODE(4)

Notes:

1. Data Format: I/O7 - I/O0 (Hex);
Address Format: A14 - A0 (Hex).
2. Boot block lockout feature enabled.

1. Data Format: I/O7 - I/O0 (Hex);
Address Format: A14 - A0 (Hex).

2. A1 - A15 = VIL.
Manufacture Code is read for A0 = VIL;
Device Code is read for A0 = VIH.
3. The device does not remain in identification mode if powered down.
4. The device returns to standard operation mode.
5. Manufacturer Code: 1FH
Device Code: 03H

9

Ordering Information(1)
tACC
(ns)
50

70

90

Note:

Active
30

ICC (mA)
Standby
0.1

Ordering Code

Package

AT49F512-50JC
AT49F512-50PC
AT49F512-50TC
AT49F512-50VC

32J
32P6
32T
32V

Commercial
(0° to 70°C)

40

0.3

AT49F512-50JI
AT49F512-50PI
AT49F512-50TI
AT49F512-50VI

32J
32P6
32T
32V

Industrial
(-40° to 85°C)

30

0.1

AT49F512-70JC
AT49F512-70PC
AT49F512-70TC
AT49F512-70VC

32J
32P6
32T
32V

Commercial
(0° to 70°C)

40

0.3

AT49F512-70JI
AT49F512-70PI
AT49F512-70TI
AT49F512-70VI

32J
32P6
32T
32V

Industrial
(-40° to 85°C)

30

0.1

AT49F512-90JC
AT49F512-90PC
AT49F512-90TC
AT49F512-90VC

32J
32P6
32T
32V

Commercial
(0° to 70°C)

40

0.3

AT49F512-90JI
AT49F512-90PI
AT49F512-90TI
AT49F512-90VI

32J
32P6
32T
32V

Industrial
(-40° to 85°C)

1. The AT49F512 has as optional boot block feature. The part number shown in the Ordering Information table is for devices
with the boot block in the lower address range (i.e., 0000H to 1FFFH). Users requiring the boot block to be in the higher
address range should contact Atmel.

Package Type
32J

32-lead, Plastic, J-leaded Chip Carrier Package (PLCC)

32P6

32-lead, 0.600" Wide, Plastic Dual Inline Package (PDIP)

32T

32-lead, Thin Small Outline Package (TSOP) (8 x 20 mm)

32V

32-lead, Thin Small Outline Package (VSOP) (8 x 14 mm)

10

Operation Range

AT49F512

AT49F512
Packaging Information
32J, 32-lead, Plastic J-leaded Chip Carrier (PLCC)
Dimensions in Inches and (Millimeters)
JEDEC STANDARD MS-016 AE

.045(1.14) X 45˚

PIN NO. 1
IDENTIFY

.050(1.27) TYP

1.67(42.4)
1.64(41.7)

.025(.635) X 30˚ - 45˚
.012(.305)
.008(.203)

.553(14.0)
.547(13.9)
.595(15.1)
.585(14.9)

.032(.813)
.026(.660)

32P6, 32-lead, 0.600" Wide, Plastic Dual Inline
Package (PDIP)
Dimensions in Inches and (Millimeters)

.300(7.62) REF
.430(10.9)
.390(9.90)
AT CONTACT
POINTS

.530(13.5)
.490(12.4)

.566(14.4)
.530(13.5)

.021(.533)
.013(.330)
.030(.762)
.015(.381)
.095(2.41)
.060(1.52)
.140(3.56)
.120(3.05)

.022(.559) X 45˚ MAX (3X)

.220(5.59)
MAX

.005(.127)
MIN

SEATING
PLANE

INDEX
MARK

.065(1.65)
.015(.381)
.022(.559)
.014(.356)

.161(4.09)
.125(3.18)
.065(1.65)
.041(1.04)

.110(2.79)
.090(2.29)

.630(16.0)
.590(15.0)
0 REF
15

.012(.305)
.008(.203)

32T, 32-lead, Plastic Thin Small Outline Package
(TSOP)
Dimensions in Millimeters and (Inches)*

.090(2.29)
MAX

1.500(38.10) REF

.453(11.5)
.447(11.4)
.495(12.6)
.485(12.3)

.690(17.5)
.610(15.5)

32V, 32-lead, Plastic Thin Small Outline Package
(VSOP)
Dimensions in Millimeters and (Inches)*

INDEX
MARK

18.5(.728)
18.3(.720)

0.50(.020)
BSC

PIN
1

7.50(.295)
REF

20.2(.795)
19.8(.780)

12.5(.492)
12.3(.484)

0.50(.020)
BSC

0.25(.010)
0.15(.006)

8.20(.323)
7.80(.307)

7.50(.295)
REF

0.25(.010)
0.15(.006)

8.10(.319)
7.90(.311)

1.20(.047) MAX

0.15(.006)
0.05(.002)

14.2(.559)
13.8(.543)

1.20(.047) MAX

0.15(.006)
0.05(.002)

0
5 REF

0.20(.008)
0.10(.004)
0.70(.028)
0.50(.020)

*Controlling dimensions: millimeters

0
5 REF

0.20(.008)
0.10(.004)
0.70(.028)
0.50(.020)

*Controlling dimensions: millimeters

11

Atmel Headquarters

Atmel Operations

Corporate Headquarters

Atmel Colorado Springs

2325 Orchard Parkway
San Jose, CA 95131
TEL (408) 441-0311
FAX (408) 487-2600

Europe

1150 E. Cheyenne Mtn. Blvd.
Colorado Springs, CO 80906
TEL (719) 576-3300
FAX (719) 540-1759

Atmel Rousset

Atmel U.K., Ltd.
Coliseum Business Centre
Riverside Way
Camberley, Surrey GU15 3YL
England
TEL (44) 1276-686-677
FAX (44) 1276-686-697

Zone Industrielle
13106 Rousset Cedex
France
TEL (33) 4-4253-6000
FAX (33) 4-4253-6001

Asia
Atmel Asia, Ltd.
Room 1219
Chinachem Golden Plaza
77 Mody Road Tsimhatsui
East Kowloon
Hong Kong
TEL (852) 2721-9778
FAX (852) 2722-1369

Japan
Atmel Japan K.K.
9F, Tonetsu Shinkawa Bldg.
1-24-8 Shinkawa
Chuo-ku, Tokyo 104-0033
Japan
TEL (81) 3-3523-3551
FAX (81) 3-3523-7581

Fax-on-Demand
North America:
1-(800) 292-8635
International:
1-(408) 441-0732

e-mail
literature@atmel.com

Web Site
http://www.atmel.com

BBS
1-(408) 436-4309
© Atmel Corporation 1999.
Atmel Cor poration makes no warranty for the use of its products, other than those expressly contained in the Company’s standard warranty which is detailed in Atmel’s Terms and Conditions located on the Company’s web site. The Company assumes no responsibility for
any errors which may appear in this document, reserves the right to change devices or specifications detailed herein at any time without
notice, and does not make any commitment to update the information contained herein. No licenses to patents or other intellectual proper ty of Atmel are granted by the Company in connection with the sale of Atmel products, expressly or by implication. Atmel’s products are
not authorized for use as critical components in life suppor t devices or systems.
Marks bearing

®

and/or

™

are registered trademarks and trademarks of Atmel Corporation.

Terms and product names in this document may be trademarks of others.

Printed on recycled paper.
1027D–04/99/xM



Source Exif Data:
File Type                       : PDF
File Type Extension             : pdf
MIME Type                       : application/pdf
PDF Version                     : 1.4
Linearized                      : No
Create Date                     : 1999:04:12 15:07:41Z
Modify Date                     : 2003:03:29 20:26:27-06:00
Page Count                      : 12
Page Mode                       : UseOutlines
Creation Date                   : 1999:04:12 15:07:41Z
Producer                        : Acrobat Distiller 3.0 for Windows
Author                          : Atmel Corporation
Mod Date                        : 2003:03:29 20:26:27-06:00
Metadata Date                   : 2003:03:29 20:26:27-06:00
Title                           : AT49F512 512K (64K x 8) 5-volt Only Flash Memory
Creator                         : Atmel Corporation
EXIF Metadata provided by EXIF.tools

Navigation menu