SUSS MICROTEC Presentation HD2611 5 Kevin Yang

User Manual: HD2611

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SUSS SOLUTIONS FOR LARGE FORMAT PATTERNING

UV Scanning Lithography and Excimer Laser Ablation

SUSS MicroTec

Kevin Yang, Habib Hichri, Ralph Zoberbier

SÜSS MicroTec Photonic Systems Inc.

June 18, 2015

MARKET DRIVER

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Mobile Applications drive Advanced Packaging Development.

Small Form Factor

High Performance

High Bandwidth

Low Power Consumption

Low Cost

•Smaller L/S and Via

•Higher I/O count

•Higher Yield

•Higher Reliability

+Higher Performance

+Lower Cost

SUSS MicroTec

AP PLATFORMS AND PROCESS STEPS

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SUSS MicroTec’s patterning solution:

UV Scanner and Excimer Laser Ablation System

AP INFRASTRUCTURE ROADMAP

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All platforms may coexist.

450mm being slow, panel based packaging will

grow.

Each sector has different benefits.

OSAT, IDM: FOWLP

Substrate Manufacturer: Embedded Die

Same requirements: Cost, Size, Performance

Collaboration required for reliable infrastructure

Yole Developpement 2012

Wafer vs. Panel: technology dependent

Rectangular: natural choice for better fit and surface utilization

Throughput: reduced handling/transfer time

Standards and Infrastructure

Process and equipment

Size

Material

LARGE PANEL ADVANTAGES

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 Photolithography

Proven technology

Resolution limitation

Multistep process

Hazardous/environmentally unfriendly wet chemical process

Balance of the photo characteristics with the desired

thermal/mechanical properties of the material

Cure of the polymer after photo-process

 Excimer Laser Ablation

Direct material removal according to the mask pattern

Simpler process without wet develop step

Fine via with high aspect ratio

Material properties not limited by the need of photo-imaging

Cure of the polymer before laser processing

PHOTOLITHOGRAPHY VS. DIRECT ABLATION

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SUSS EXPOSURE PRODUCT PORTFOLIO

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MA300 Gen2

Automatic

200/300mm

MA/BA8 Gen3

Semi-Automatic

Pieces up to 200mm

MA200 Gen3

Automatic

150/200mm

MA12

Manual

200/300mm (squares)

DSC300 Gen2

Automatic

200/300mm

ELP300 Gen2

Automatic

200/300mm

Mask Aligner Projection Scanner Excimer Ablation System

DSC500 / DSC800

Automatic

450x500mm / 650x780mm

ELP600

Automatic

600x600mm

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DSC300/500/800 UV PROJECTION SCANNER

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Proven UV projection scanning technology

Low cost

Full-Field No-Stitch 1:1 Projection Imaging

Alignment accuracy: TSA < 1µm

Variable NA – high DoF to high resolution

Full automation

Wafers: 200mm, 300mm, 450mm

Panels: 450x500mm, 650 x 780mm DSC 300 - Wafers

DSC500 - Panels

DSC500:

Near Vertical Orientation DSC300 Beam Delivery System

DSC PROJECTION SCANNER IMAGING EXAMPLES

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30µm vias in 100µm WBR2100

10µm L/S in 12µm AZ15nxT

40µm vias in 80µm AZ125nXT 5µm vias in 10µm AZ10XT

6µm and 7µm L/S in 15µm AZ4620 6µm vias in 10µm HD8820 PBO

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ELP 300/600 EXIMER ABLATION SYSTEM

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ELP300: up to 300mm wafer

ELP600: up to 600mm x 600mm substrate

ELP300 ELP600

EXCIMER LASER ABLATION

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248nm and 308nm

Direct removal of the material

Add enough energy to break the molecular bonds at the surface.

Limited thermal effect for heating or change to adjacent area or underlying material.

Mask based projection

Throughput independent of the pattern shape or density.

Suitable Materials:

Most organic materials

Polymers/Organic Dielectrics (PI, PBO, BCB, Epoxy etc.)

Epoxy Mold Compounds (EMC – filled and unfilled)

Some inorganics

Dielectrics (SiNx < 1µm thick with 248nm )

Thin metals (Ti, TiW, TaN, Ta, Cu, Ag, Al, etc. < 600nm thick on organic material)

Conductive materials (ITO, IZO, CNT < 1µm thick on organic material)

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mask

substrate

Fluence and Etch Rate

With threshold fluence F0 ~ constant

etch depth per pulse (etch rate) can be predicted.

Depth control by number of pulses

Metal Pad as Etch Stop

Metal pads (> ~1µm) become natural stop layer

for Excimer via ablation.

Flexibility for material thickness variation.

Cu Pad Al Pad

Via 30µm

Stopped on Cu pad

No etching of Cu

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EXCIMER LASER ABLATION

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Y. H. Chen, H. Y. Zheng, K. S. Wong, and S. C. Tam, “Excimer laser drilling of polymers”,

Proc. SPIE 3184, 1997

Polyimide Ablation Rate Dependence on Wavelength

0

0.1

0.2

0.3

0.4

0.5

0.6

400 500 600 700 800 900 1000 1100 1200

Fluence, mJ/cm²

Ablation rate, µm/pulse

KrF – 248 nm

XeCl – 308 nm

Linear (XeCl –

308 nm)

Linear (KrF –

248 nm)

WAVELENGTH, FLUENCE, PULSE, AND ETCH RATE

Absorption and etch rate vary:

Wavelength

Fluence

Etch depth control by number of pulses

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Number of Pulses

Etch Depth (μm)

Etch Rate (μm)

Fluence (mJ/cm2)

SIDE-WALL ANGLE AND FLUENCE

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Side-wall Angle controlled by Fluence

Steeper wall with higher fluence

Higher etch rate with higher fluence

65° 81°

376 mJ/cm2, 45 pulses 1200 mJ/cm2, 12 pulses

EXCIMER LASER ABLATION ADVANTAGES

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Technical benefits

Higher via resolution < 3μm (2μm demonstrated)

High overlay control:

300mm Wafer: +/- 1μm

Panels: +/- 2μm

Side-wall angle control

Limited thermal effect

Simpler process

Eliminate develop and chemical etch steps

Reduce bake/curing step

Safety and environmental protection

Reduction of hazardous process steps and chemicals

Reduction of chemical waste

Benefit with Non-Photo Material

Cost Reduction

Combination of desirable material properties

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PHOTO AND NON-PHOTO MATERIAL EXAMPLE

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Non-photo material’s advantages

Desirable properties

Low cost

Photo/Non-Photo Non-Photo Photo

Material PI PI

Manufacturer HD Micro HD Micro

Product PI-2611 HD-4100

CTE (ppm/°C) 335

Modulus (GPa) 8.5 3.4

Tensile Strength (MPa) 350 200

Elongation (%) 100 45

ELP600 – TECHNICAL CHARACTERISTICS

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ELP600

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HD8930 PBO 13µm

JSR WPR 5100 10µm HD4004 8.2µm

15 µm dia vias

40 µm vias

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ELP EXCIMER STEPPER PATTERNING EXAMPLES

(PHOTO MATERIAL)

HD (proprietary) 8µm

EMC (undisclosed) 10µm

ELP EXCIMER STEPPER PATTERNING EXAMPLES

(NON-PHOTO MATERIAL)

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Dow BCB Cyclotene 302X 12µm

HD2574

ELP EXCIMER STEPPER PATTERNING EXAMPLES

(BCB CROSS SECTION)

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Mask: 7 μm

Top: 6 μm

Bottom: 4.2 μm

650 mJ/cm2

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Mask: 5 μm

Top: 4.1 μm

Bottom: 2.6 μm

650 mJ/cm2

Michael Töpper, Karin Hauck, Mario Schima Danny Jaeger, Klaus-

Dieter Lang, “A sub-4 μm Via Technology of Thin film Polymers using

Scanning Laser Ablation”, ECTC 2015

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Mask: 10 μm

Top: 10.3 μm

Bottom: 7.2 μm

Thickness: 15 μm

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Mask: 5 μm

Top: 4.7 μm

Bottom: 2.8 μm

Thickness: 15 μm

Michael Töpper, Karin Hauck, Mario Schima Danny Jaeger, Klaus-

Dieter Lang, “A sub-4 μm Via Technology of Thin film Polymers using

Scanning Laser Ablation”, ECTC 2015

ELP EXCIMER STEPPER PATTERNING EXAMPLES

(BCB DRY FILM CROSS SECTION)

ELP EXCIMER STEPPER PATTERNING EXAMPLES

(FILLED VIA AND RDL)

polishing mold

10µm ZS100

30µm: buffer layer (ZS100)

Glass (300µm: core)

10µm

40µm 2 metal layer with 10µm fully filled micro-vias

at 40µm pitch and 2.5µm line

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8-10µm fully filled micro-vias at 20µm pitch

Yuya Suzuki, Jan Brune, Rolf Senczuk, Rainer Pätzel, Ryuta Furuya, Fuhan

Liu, Venky Sundaram, Rao Tummala, “Demonstration of 20μm Pitch Micro-vias

by Excimer Laser Ablation in Ultra-thin Dry-film Polymer Dielectrics for Multi-

layer RDL on Glass Interposers”, ECTC 2015 Georgia Tech PRC ZEON

Post ablation cleaning is required for subsequent

processes in most cases.

Sacrificial layer

Successful cleaning of HD4104

Sacrifiall layer removed with high-pressure CO2 ionized water

O2 plasma cleaning

Successful cleaning of PBO, BCB, HD2611, HD4110

In-house tool (vacuum plasma) available

CO2 snow cleaning

Successful cleaning PBO with most aggressive CO2 snow

3rd party tool available

DPSS Cleaning

Successful cleaning PBO (HD8820)

Using pico second DPSS Laser

In-house tool available

The material determines the cleaning method.

POST LASER ABLATION CLEANING

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before after

Sacrificial Layer

O2 plasma

CO2 snow

DPSS

Mobile products drive packaging trend

Cost, Form Factor, Performance, Yield

Large size rectangular panel will grow for high volume manufacturing.

Driven by cost reduction

Patterning is a major factor along with material development.

Suss MicroTec provides Mask Aligner, UV Projection Scanner and Excimer Laser

Ablation for patterning applications.

UV scanner and excimer laser stepper are available for large format patterning.

Excimer laser stepper provides maximum benefits with non-photo materials.

Excimer laser stepper applications in RDL Via and Trench formation,

SLR and Laser Debonding.

Demo and evaluation test available

In-house at Suss MicroTec

Fraunhofer Institute IZM

SUMMARY

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ELP600

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