FJBE2150D ESBC™ Rated NPN Silicon Transistor MOSFET QS2150
User Manual: MOSFET QS2150
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FJBE2150D — ESBC™ Rated NPN Silicon Transistor
© 2013 Fairchild Semiconductor Corporation www.fairchildsemi.com
FJBE2150D Rev. 1.4
January 2016
FJBE2150D
ESBC™ Rated NPN Silicon Transistor
ESBC Features (FDC655 MOSFET)
• Low Equivalent On Resistance
• Very Fast Switch: 150 kHz
• Squared RBSOA: Up to 1500 V
• Avalanche Rated
• Low Driving Capacitance, No Miller Capacitance
(Typ. 12 pF Capacitance at 200 V)
• Low Switching Losses
• Reliable HV Switch: No False Triggering due to
High dv/dt Transients
Applications
• High-Voltage and High-Speed Power Switches
• Emitter-Switched Bipolar/MOSFET Cascode
(ESBC™)
• Smart Meters, Smart Breakers,
HV Industrial Power Supplies
• Motor Drivers and Ignition Drivers
Ordering Information
Notes:
1. Figure of Merit.
2. Other Fairchild MOSFETs can be used in this ESBC application.
VCS(ON) ICEquiv. RCS(ON)
0.131 V 0.5 A 0.261 Ω(1)
Part Number Marking Package Packing Method
FJBE2150DTU J2150D D2-PAK 2L (TO-263 2L) Tube
(1)
(3)
(2)
B
C
E
Figure 2. Internal Schematic Diagram
C
B
G
S
FDC655
FJBE2150D
Figure 3. ESBC Configuration(2)
Figure 1. Pin Configuration
1.Base 2.Emitter 3.Collector
1D2-PAK 2L
3
2
Description
The FJBE2150D is a low-cost, high-performance power
switch designed to be used in an ESBC™ configuration in
applications such as: power supplies, motor drivers,
smart grid, or ignition switches. The power switch is
designed to operate up to 1500 volts and up to 3 amps,
while providing exceptionally low on-resistance and very
low switching losses.
The ESBC™ switch is designed to be driven using off-the-
shelf power supply controllers or drivers. The ESBC™
MOSFET is a low-voltage, low-cost, surface-mount
device that combines low-input capacitance and fast
switching. The ESBC™ configuration further minimizes
the required driving power because it does not have
Miller capacitance.
The FJBE2150D provides exceptional reliability and a
large operating range due to its square Reverse-Bias-
Safe-Operating-Area (RBSOA) and rugged design. The
device is avalanche rated and has no parasitic transis-
tors, so is not prone to static dv/dt failures.
The power switch is manufactured using a dedicated
high-voltage bipolar process and is packaged in high-volt-
age HV-D2PAK rated at 2500 V creepage and clearance.
FJBE2150D — ESBC™ Rated NPN Silicon Transistor
© 2013 Fairchild Semiconductor Corporation www.fairchildsemi.com
FJBE2150D Rev. 1.4 2
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Thermal Characteristics(3)
Values are at TA = 25°C unless otherwise noted.
Note:
3. Device mounted on FR-4 PCB, board size = 76.2 mm x 114.3 mm, land pattern 12.70 mm x 9.45 mm,
trace size = 10 mil.
Symbol Parameter Value Unit
VCBO Collector-Base Voltage 1500 V
VCEO Collector-Emitter Voltage 800 V
VEBO Emitter-Base Voltage 12 V
ICCollector Current 2 A
ICP Collector Current (Pulse) 3 A
IBBase Current 1 A
IBP Base Current (Pulse) 2 A
PDPower Dissipation (TC = 25°C) 110 W
TJOperating and Junction Temperature Range - 55 to +125 °C
TSTG Storage Temperature Range - 65 to +150 °C
EAS Avalanche Energy (TJ = 25°C, 8 mH) 3.5 mJ
Symbol Parameter Max. Unit
Rθjc Thermal Resistance, Junction to Case 1.13 °C/W
Rθja Thermal Resistance, Junction to Ambient 76.42 °C/W
FJBE2150D — ESBC™ Rated NPN Silicon Transistor
© 2013 Fairchild Semiconductor Corporation www.fairchildsemi.com
FJBE2150D Rev. 1.4 3
Electrical Characteristics(4)
Values are at TA = 25°C unless otherwise noted.
Note:
4. Pulse test: pulse width = 20 μs, duty cycle≤ 10%.
Symbol Parameter Conditions Min. Typ. Max. Unit
BVCBO Collector-Base Breakdown Voltage IC = 0.5 mA, IE = 0 1500 1689 V
BVCEO Collector-Emitter Breakdown Voltage IC = 5 mA, IB = 0 800 870 V
BVEBO Emitter-Base Breakdown Voltage IE = 0.5 mA, IC = 0 12.0 14.8 V
ICES Collector Cut-off Current VCE = 1500 V, VBE = 0 0.01 100 μA
ICEO Collector Cut-off Current VCE = 800 V, IB = 0 0.01 100 μA
IEBO Emitter Cut-off Current VEB = 12 V, IC = 0 0.05 500 μA
hFE DC Current Gain VCE = 3 V, IC = 0.4 A 20 29 35
VCE = 10 V, IC = 5 mA 20 43
VCE(sat) Collector-Emitter Saturation Voltage
IC = 0.25 A, IB = 0.05 A 0.16
VIC = 0.5 A, IB = 0.167 A 0.12
IC = 1 A, IB = 0.33 A 0.25
VBE(sat) Base-Emitter Saturation Voltage IC = 500 mA, IB = 50 mA 0.74 1.20 V
IC = 2 A, IB = 0.4 A 0.85 1.20
CIB Input Capacitance VEB = 10 V, IC = 0, f = 1 MHz 745 1000 pF
COB Output Capacitance VCB = 200 V, IE = 0, f = 1 MHz 15 pF
fTCurrent Gain Bandwidth Product IC = 0.1 A, VCE = 10 V 5 MHz
VFDiode Forward Voltage IF = 0.4 A 0.76 1.20 V
IF = 1 A 0.83 1.50
FJBE2150D — ESBC™ Rated NPN Silicon Transistor
© 2013 Fairchild Semiconductor Corporation www.fairchildsemi.com
FJBE2150D Rev. 1.4 4
ESBC Configured Electrical Characteristics(5)
Values are at TA = 25°C unless otherwise noted.
Note:
5. Used typical FDC655 MOSFET values in table. Values can vary if other Fairchild MOSFETs are used.
Symbol Parameter Conditions Min. Typ. Max. Unit
fTCurrent Gain Bandwidth Product IC = 0.1 A,VCE = 10 V 25 MHz
ItfInductive Current Fall Time VGS = 10 V, RG = 47 Ω,
VClamp = 500 V,
tp = 3.1 μs, IC = 0.3 A,
IB = 0.03 A, LC = 1 mH,
SRF = 480 kHz
137 ns
tsInductive Storage Time 350 ns
VtfInductive Voltage Fall Time 120 ns
VtrInductive Voltage Rise Time 100 ns
tcInductive Crossover Time 137 ns
ItfInductive Current Fall Time VGS = 10 V, RG = 47 Ω,
VClamp = 500 V,
tp = 10 μs, IC = 1 A,
IB = 0.2 A, LC = 1 mH,
SRF = 480 kHz
35 ns
tsInductive Storage Time 980 ns
VtfInductive Voltage Fall Time 30 ns
VtrInductive Voltage Rise Time 195 ns
tcInductive Crossover Time 210 ns
VCSW
Maximum Collector Source Volt-
age at Turn-off without Snubber hFE = 5, IC = 2 A 1500 V
IGS(OS) Gate-Source Leakage Current VGS = ±20 V 1.0 nA
VCS(ON) Collector-Source On Voltage
VGS = 10 V, IC = 2 A, IB = 0.67 A,
hFE = 3 2.210
V
VGS = 10 V, IC = 1 A, IB = 0.33 A,
hFE = 3 0.321
VGS = 10 V, IC = 0.5 A, IB = 0.17 A,
hFE = 3 0.131
VGS = 10 V, IC = 0.3 A, IB = 0.06 A,
hFE = 5 0.166
VGS(th) Gate Threshold Voltage VBS = VGS, IB = 250 μA1.9 V
Ciss
Input Capacitance
(VGS = VCB = 0) VCS = 25 V, f = 1 MHz 470 pF
QGS(tot)
Gate-Source Charge
VCB = 0 VGS = 10 V, IC = 8 A, VCS = 25 V 9nC
rDS(ON)
Static Drain-Source
On Resistance
VGS = 10 V, ID = 6.3 A 21
mΩ
VGS = 4.5 V, ID = 5.5 A 26
VGS = 10 V, ID = 6.3 A, TJ = 125°C 30
FJBE2150D — ESBC™ Rated NPN Silicon Transistor
© 2013 Fairchild Semiconductor Corporation www.fairchildsemi.com
FJBE2150D Rev. 1.4 5
Typical Performance Characteristics
Figure 4. Static Characteristic Figure 5. DC Current Gain
Figure 6. Collector-Emitter Saturation Voltage
hFE = 3 Figure 7. Collector-Emitter Saturation Voltage
hFE = 5
Figure 8. Collector-Emitter Saturation Voltage
hFE = 10 Figure 9. Collector-Emitter Saturation Voltage
hFE = 20
01234567
0
1
2
3
1A
800mA
900mA
700mA
600mA
500mA
400mA
300mA
IB=100mA
200mA
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR EMITTER VOLTAGE
1 10 100 1000
1
10
100
VCE=10V
TA=25oC
TA=125oC
hFE, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
1E-3 0.01 0.1 1 10
0.01
0.1
1
10
100
TA = 25 o C
TA = 125 o C
IC = 3 IB
TA = - 25 oC
VCE(sat) [V], SATURATION VOLTAGE
IC [A], COLLECTOR CURRENT
1E-3 0.01 0.1 1 10
0.1
1
10
100
TA = 125 o C
TA = -25 oC
TA = 25 o C
IC = 5 IB
VCE(sat) [V], SATURATION VOLTAGE
IC [A], COLLECTOR CURRENT
1E-3 0.01 0.1 1 10
0.1
1
10
100
TA = 125 o C
TA = -25 oC
TA = 25 o C
IC = 10 IB
VCE(sat) [V], SATURATION VOLTAGE
IC [A], COLLECTOR CURRENT
1E-3 0.01 0.1 1 10
0.1
1
10
100
TA = 125 o C
TA = -25 oC
TA = 25 o C
IC = 20 IB
VCE(sat) [V], SATURATION VOLTAGE
IC [A], COLLECTOR CURRENT
FJBE2150D — ESBC™ Rated NPN Silicon Transistor
© 2013 Fairchild Semiconductor Corporation www.fairchildsemi.com
FJBE2150D Rev. 1.4 6
Typical Performance Characteristics (Continued)
Figure 10. Typical Collector Saturation Voltage Figure 11. Capacitance
Figure 12. Inductive Load Collector Current
Fall-Time (tf)Figure 13. Inductive Load Collector Current
Storage Time (tstg)
Figure 14. Inductive Load Collector Voltage
Fall-Time (tf)Figure 15. Inductive Load Collector Voltage
Rise-Time (tr)
1 10 100 1k
0
1
2
TJ=25oC
2.0A
3.0A
1.0A
0.4A
IC=0.2A
VCE[V], VOLTAGE
IB[mA], BASE CURRENT
1 10 100 1000 10000
1
10
100
1000
Cob (Emitter Open)
Cob (Emitter Grounded)
CAPACITANCE [pF]
COLLECTOR-BASE VOLTAGE[V]
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
0
25
50
75
100
125
150
175
200
225
250
hfe=10 ESBC
hfe=5 ESBC
hfe=10 common emitter
hfe=5 common emitter
Time [ns]
IC [A], COLLECTOR CURRENT
ta = 25oC L=1mH SRF=480KHz
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
hfe=10 ESBC
hfe=5 ESBC
hfe=10 common emitter
hfe=5 common emitter
Time [us]
IC [A], COLLECTOR CURRENT
ta = 25oC L=1mH SRF=480KHz
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
0
20
40
60
80
100
120
140
160
180
200
hfe=10 ESBC
hfe=5 ESBC
hfe=10 common emitter
hfe=5 common emitter
Time [ns]
IC [A], COLLECTOR CURRENT
ta = 25oC L=1mH SRF=480KHz
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
60
80
100
120
140
160
180
200
220
240
260
280
300
hfe=10 ESBC
hfe=5 ESBC
hfe=10 commom emitter
hfe=5 common emitter
Time [ns]
IC [A], COLLECTOR CURRENT
ta = 25oC L=1mH SRF=480KHz
FJBE2150D — ESBC™ Rated NPN Silicon Transistor
© 2013 Fairchild Semiconductor Corporation www.fairchildsemi.com
FJBE2150D Rev. 1.4 7
Typical Performance Characteristics (Continued)
Figure 16. Inductive Load Collector Current / Voltage
Crossover (tc)Figure 17. BJT Reverse Bias Safe Operating Area
Figure 18. ESBC RBSOA Figure 19. Crossover Forward Bias Safe Operating
Area (FBSOA)
Figure 20. Power Derating
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
80
100
120
140
160
180
200
220
240
260
280
300
hfe=10 ESBC
hfe=5 ESBC
hfe=10 common emitter
hfe=5 common emitter
Time [ns]
IC [A], COLLECTOR CURRENT
ta = 25oC L=1mH SRF=480KHz
0 200 400 600 800 1000 1200 1400 1600 1800
0
1
2
3
VDD = +/-50V, RLOAD = 500KΩ
VBE(off) = 5V
IC [A], COLLECTOR CURRENT
VCE [V], COLLECTOR-EMITTER VOLTAGE
0 200 400 600 800 1000 1200 1400 1600 1800 2000
0
1
2
3
VDD = +/-50V, RLOAD = 500Kohms
HFE = 4
IC [A], COLLECTOR CURRENT
VCE [V], COLLECTOR-EMITTER VOLTAGE
0 500 1000 1500 2000
0.1
1
10
TC = 25oC
Single 80us Pulse
IC [mA], COLLECTOR CURRENT
VCE [V], COLLECTOR-EMITTER VOLTAGE
0 25 50 75 100 125 150 175 200
0
20
40
60
80
100
120
140
PD [W], POWER DISSIPATION
TC [oC], CASE TEMPERATURE
FJBE2150D — ESBC™ Rated NPN Silicon Transistor
© 2013 Fairchild Semiconductor Corporation www.fairchildsemi.com
FJBE2150D Rev. 1.4 8
Test Circuits
Figure 23. fT Measurement Figure 24. FBSOA
VCE
A
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sT
pj
R\G}
k|{
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sT
pj
k|{
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pi
Figure 21. Test Circuit for Inductive Load and Reverse Bias Safe Operating
Figure 22. Energy Rating Test Circuit
FJBE2150D — ESBC™ Rated NPN Silicon Transistor
© 2013 Fairchild Semiconductor Corporation www.fairchildsemi.com
FJBE2150D Rev. 1.4 9
Test Circuits (Continued)
Functional Test Waveforms
Figure 25. Simplified Saturated Switch Driver Circuit
Figure 26. Crossover Time Measurement
Figure 27. Saturated Switching Waveform
90% Vce
10% Vce
90% Ic
10% Ic
FJBE2150D — ESBC™ Rated NPN Silicon Transistor
© 2013 Fairchild Semiconductor Corporation www.fairchildsemi.com
FJBE2150D Rev. 1.4 10
Functional Test Waveforms (Continued)
Figure 28. Stora ge Time - Common Emitter
Base Turn-off (Ib2) to IC Fall-Time F ig ur e 2 9. S to r ag e Ti m e - E SB C F ET
Gate (off) to IC Fall-Time
FJBE2150D — ESBC™ Rated NPN Silicon Transistor
© 2013 Fairchild Semiconductor Corporation www.fairchildsemi.com
FJBE2150D Rev. 1.4 11
Very Wide Input Voltage Range Supply
Driving ESBC Switches
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Figure 30. 8 W; Secondary-Side Regulation: 3 Capacitor Input; Quasi Resonant
Figure 31. VCC Derived
Figure 32. Vbias Supply Derived
Figure 33. Proportional Drive
FJBE2150D — ESBC™ Rated NPN Silicon Transistor
© 2013 Fairchild Semiconductor Corporation www.fairchildsemi.com
FJBE2150D Rev. 1.4 12
Physical Dimensions
Figure 34. 2 LEAD, TO-263, JEDEC TO263 VARIATION AB, D2PAK
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