FJBE2150D ESBC™ Rated NPN Silicon Transistor MOSFET QS2150

User Manual: MOSFET QS2150

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FJBE2150D
ESBC™ Rated NPN Silicon Transistor
Description

ESBC Features (FDC655 MOSFET)
VCS(ON)

IC

Equiv. RCS(ON)

0.131 V

0.5 A

0.261 Ω(1)

•
•
•
•
•

Low Equivalent On Resistance
Very Fast Switch: 150 kHz
Squared RBSOA: Up to 1500 V
Avalanche Rated
Low Driving Capacitance, No Miller Capacitance
(Typ. 12 pF Capacitance at 200 V)
• Low Switching Losses
• Reliable HV Switch: No False Triggering due to
High dv/dt Transients

Applications

The FJBE2150D is a low-cost, high-performance power
switch designed to be used in an ESBC™ configuration in
applications such as: power supplies, motor drivers,
smart grid, or ignition switches. The power switch is
designed to operate up to 1500 volts and up to 3 amps,
while providing exceptionally low on-resistance and very
low switching losses.
The ESBC™ switch is designed to be driven using off-theshelf power supply controllers or drivers. The ESBC™
MOSFET is a low-voltage, low-cost, surface-mount
device that combines low-input capacitance and fast
switching. The ESBC™ configuration further minimizes
the required driving power because it does not have
Miller capacitance.
The FJBE2150D provides exceptional reliability and a
large operating range due to its square Reverse-BiasSafe-Operating-Area (RBSOA) and rugged design. The
device is avalanche rated and has no parasitic transistors, so is not prone to static dv/dt failures.

• High-Voltage and High-Speed Power Switches
• Emitter-Switched Bipolar/MOSFET Cascode
(ESBC™)
• Smart Meters, Smart Breakers,
HV Industrial Power Supplies
• Motor Drivers and Ignition Drivers

The power switch is manufactured using a dedicated
high-voltage bipolar process and is packaged in high-voltage HV-D2PAK rated at 2500 V creepage and clearance.

C

3

C

(3)

FJBE2150D

B

(1)
B
FDC655

1

1.Base

2

2.Emitter

G

D2-PAK 2L
E

3.Collector

Figure 1. Pin Configuration

(2)

S

Figure 2. Internal Schematic Diagram

Figure 3. ESBC Configuration(2)

Ordering Information
Part Number

Marking

Package

Packing Method

FJBE2150DTU

J2150D

D2-PAK 2L (TO-263 2L)

Tube

Notes:
1. Figure of Merit.
2. Other Fairchild MOSFETs can be used in this ESBC application.
© 2013 Fairchild Semiconductor Corporation
FJBE2150D Rev. 1.4

www.fairchildsemi.com

FJBE2150D — ESBC™ Rated NPN Silicon Transistor

January 2016

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

1500

V

VCEO

Collector-Emitter Voltage

800

V

VEBO

Emitter-Base Voltage

12

V

IC

Collector Current

2

A

ICP

Collector Current (Pulse)

3

A

IB

Base Current

1

A

IBP

Base Current (Pulse)

2

A

PD

Power Dissipation (TC = 25°C)

110

W

TJ

Operating and Junction Temperature Range

- 55 to +125

°C

TSTG

Storage Temperature Range

- 65 to +150

°C

EAS

Avalanche Energy (TJ = 25°C, 8 mH)

3.5

mJ

Max.

Unit

Thermal Characteristics(3)
Values are at TA = 25°C unless otherwise noted.

Symbol

Parameter

Rθjc

Thermal Resistance, Junction to Case

1.13

°C/W

Rθja

Thermal Resistance, Junction to Ambient

76.42

°C/W

Note:
3. Device mounted on FR-4 PCB, board size = 76.2 mm x 114.3 mm, land pattern 12.70 mm x 9.45 mm,
trace size = 10 mil.

© 2013 Fairchild Semiconductor Corporation
FJBE2150D Rev. 1.4

www.fairchildsemi.com
2

FJBE2150D — ESBC™ Rated NPN Silicon Transistor

Absolute Maximum Ratings

Values are at TA = 25°C unless otherwise noted.

Symbol

Parameter

Conditions

Min.

Typ. Max.

Unit

BVCBO

Collector-Base Breakdown Voltage

IC = 0.5 mA, IE = 0

1500

1689

V

BVCEO

Collector-Emitter Breakdown Voltage

IC = 5 mA, IB = 0

800

870

V

BVEBO

Emitter-Base Breakdown Voltage

IE = 0.5 mA, IC = 0

12.0

14.8

V

ICES

Collector Cut-off Current

VCE = 1500 V, VBE = 0

0.01

100

μA

ICEO

Collector Cut-off Current

VCE = 800 V, IB = 0

0.01

100

μA

IEBO

Emitter Cut-off Current

VEB = 12 V, IC = 0

0.05

500

μA

hFE

DC Current Gain

35

VCE(sat)

VBE(sat)

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

VCE = 3 V, IC = 0.4 A

20

29

VCE = 10 V, IC = 5 mA

20

43

IC = 0.25 A, IB = 0.05 A

0.16

IC = 0.5 A, IB = 0.167 A

0.12

IC = 1 A, IB = 0.33 A

0.25

IC = 500 mA, IB = 50 mA

0.74

1.20

IC = 2 A, IB = 0.4 A

0.85

1.20
1000

V

V

CIB

Input Capacitance

VEB = 10 V, IC = 0, f = 1 MHz

745

COB

Output Capacitance

VCB = 200 V, IE = 0, f = 1 MHz

15

pF

fT

Current Gain Bandwidth Product

IC = 0.1 A, VCE = 10 V

5

MHz

VF

Diode Forward Voltage

IF = 0.4 A

0.76

1.20

IF = 1 A

0.83

1.50

pF

V

Note:
4. Pulse test: pulse width = 20 μs, duty cycle≤ 10%.

© 2013 Fairchild Semiconductor Corporation
FJBE2150D Rev. 1.4

www.fairchildsemi.com
3

FJBE2150D — ESBC™ Rated NPN Silicon Transistor

Electrical Characteristics(4)

Values are at TA = 25°C unless otherwise noted.

Symbol
fT

Parameter

Conditions

tc

Current Gain Bandwidth Product IC = 0.1 A,VCE = 10 V
Inductive Current Fall Time
VGS = 10 V, RG = 47 Ω,
Inductive Storage Time
VClamp = 500 V,
Inductive Voltage Fall Time
tp = 3.1 μs, IC = 0.3 A,
IB = 0.03 A, LC = 1 mH,
Inductive Voltage Rise Time
SRF = 480 kHz
Inductive Crossover Time

Itf

Inductive Current Fall Time

ts

Inductive Storage Time

Vtf

Inductive Voltage Fall Time

Vtr

Inductive Voltage Rise Time

tc

Inductive Crossover Time

Itf
ts
Vtf
Vtr

Maximum Collector Source VolthFE = 5, IC = 2 A
age at Turn-off without Snubber

IGS(OS)

Gate-Source Leakage Current

Collector-Source On Voltage

VGS = ±20 V

Typ. Max.
25

VGS = 10 V, RG = 47 Ω,
VClamp = 500 V,
tp = 10 μs, IC = 1 A,
IB = 0.2 A, LC = 1 mH,
SRF = 480 kHz

VCSW

VCS(ON)

Min.

Unit
MHz

137

ns

350

ns

120

ns

100

ns

137

ns

35

ns

980

ns

30

ns

195

ns

210

ns

1500

V
1.0

VGS = 10 V, IC = 2 A, IB = 0.67 A,
hFE = 3

2.210

VGS = 10 V, IC = 1 A, IB = 0.33 A,
hFE = 3

0.321

VGS = 10 V, IC = 0.5 A, IB = 0.17 A,
hFE = 3

0.131

VGS = 10 V, IC = 0.3 A, IB = 0.06 A,
hFE = 5

0.166

nA

V

Gate Threshold Voltage

VBS = VGS, IB = 250 μA

1.9

V

Input Capacitance
(VGS = VCB = 0)

VCS = 25 V, f = 1 MHz

470

pF

QGS(tot)

Gate-Source Charge
VCB = 0

VGS = 10 V, IC = 8 A, VCS = 25 V

9

nC

VGS = 10 V, ID = 6.3 A

21

rDS(ON)

Static Drain-Source
On Resistance

VGS = 4.5 V, ID = 5.5 A

26

VGS = 10 V, ID = 6.3 A, TJ = 125°C

30

VGS(th)
Ciss

mΩ

Note:
5. Used typical FDC655 MOSFET values in table. Values can vary if other Fairchild MOSFETs are used.

© 2013 Fairchild Semiconductor Corporation
FJBE2150D Rev. 1.4

www.fairchildsemi.com
4

FJBE2150D — ESBC™ Rated NPN Silicon Transistor

ESBC Configured Electrical Characteristics(5)

FJBE2150D — ESBC™ Rated NPN Silicon Transistor

Typical Performance Characteristics
3

V CE =10V

2

100

hFE, DC CURRENT GAIN

IC[A], COLLECTOR CURRENT

1A
900m A
800m A
700m A
600m A
500m A
400m A
300m A
200m A
IB = 1 0 0 m A
1

0

0

1

2

3

4

5

6

o

T A =125 C
o

T A =25 C
10

1

7

1

10

100

1000

I C [mA], COLLECTOR CURRENT

V C E [V ], C O L L E C T O R E M IT T E R V O L T A G E

Figure 4. Static Characteristic

Figure 5. DC Current Gain

100

100

IC = 5 IB
VCE(sat) [V], SATURATION VOLTAGE

VCE(sat) [V], SATURATION VOLTAGE

IC = 3 IB

10
o

TA = 125 C
1
o

TA = 25 C
0.1
o

TA = - 25 C
0.01
1E-3

0.01

0.1

1

10

o

TA = 25 C
1

o

TA = -25 C
0.1
1E-3

10

1

10

100

100

IC = 20 IB

IC = 10 IB

VCE(sat) [V], SATURATION VOLTAGE

VCE(sat) [V], SATURATION VOLTAGE

0.1

Figure 7. Collector-Emitter Saturation Voltage
hFE = 5

Figure 6. Collector-Emitter Saturation Voltage
hFE = 3

10
o

TA = 125 C

o

TA = 25 C

1
o

TA = -25 C

0.01

0.1

1

10
o

TA = 125 C
o

TA = 25 C
1

0.1
1E-3

10

o

TA = -25 C

0.01

0.1

1

10

IC [A], COLLECTOR CURRENT

IC [A], COLLECTOR CURRENT

Figure 9. Collector-Emitter Saturation Voltage
hFE = 20

Figure 8. Collector-Emitter Saturation Voltage
hFE = 10

© 2013 Fairchild Semiconductor Corporation
FJBE2150D Rev. 1.4

0.01

IC [A], COLLECTOR CURRENT

IC [A], COLLECTOR CURRENT

0.1
1E-3

o

TA = 125 C

www.fairchildsemi.com
5

2

1000
o

T J =25 C

CAPACITANCE [pF]

VCE[V], VOLTAGE

3 .0 A
2 .0 A
1 .0 A
1

0 .4 A
IC = 0 .2 A

0

1

10

100

100

Cob (Emitter Open)

10

1

1k

Cob (Emitter Grounded)

1

10

IB [m A], B AS E C U R R E N T

100

1000

Figure 10. Typical Collector Saturation Voltage

Figure 11. Capacitance
2.0

250

o

o

ta = 25 C L=1mH SRF=480KHz

225

ta = 25 C L=1mH SRF=480KHz

1.8

hfe=10 common emitter

200

1.6

175

1.4

Time [us]

150

Time [ns]

10000

COLLECTOR-BASE VOLTAGE[V]

125
hfe=5 common emitter

100

hfe=10 common emitter

hfe=5 common emitter

1.2
1.0

hfe=5 ESBC

0.8

75
0.6

50
25

hfe=10 ESBC
hfe=5 ESBC

0.4
hfe=10 ESBC

0
0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

0.2
0.2

2.0

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

IC [A], COLLECTOR CURRENT

IC [A], COLLECTOR CURRENT

Figure 13. Inductive Load Collector Current
Storage Time (tstg)

Figure 12. Inductive Load Collector Current
Fall-Time (tf)

300

200

o

o

ta = 25 C L=1mH SRF=480KHz

180

ta = 25 C L=1mH SRF=480KHz

280
260
240

140

220

120

200

100

Time [ns]

Time [ns]

160

hfe=10 common emitter

80
hfe=10 ESBC

60

0
0.2

160
hfe=5 common emitter

140

hfe=10 commom emitter

100
hfe=5 common emitter

0.4

0.6

0.8

80
hfe=5 ESBC
1.0

1.2

hfe=10 ESBC

60
1.4

1.6

1.8

0.2

2.0

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

IC [A], COLLECTOR CURRENT

IC [A], COLLECTOR CURRENT

Figure 15. Inductive Load Collector Voltage
Rise-Time (tr)

Figure 14. Inductive Load Collector Voltage
Fall-Time (tf)

© 2013 Fairchild Semiconductor Corporation
FJBE2150D Rev. 1.4

180

120

40
20

hfe=5 ESBC

www.fairchildsemi.com
6

FJBE2150D — ESBC™ Rated NPN Silicon Transistor

Typical Performance Characteristics (Continued)

300

3
o

ta = 25 C L=1mH SRF=480KHz

280

VDD = +/-50V, RLOAD = 500KΩ

IC [A], COLLECTOR CURRENT

260
240
hfe=5 ESBC

Time [ns]

220
200
hfe=10 common emitter
180
hfe=5 common emitter

160
140

hfe=10 ESBC

120

VBE(off) = 5V

2

1

100
0

80
0.2

0

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

200

400

600

800

1000

1200

1400

1600

1800

VCE [V], COLLECTOR-EMITTER VOLTAGE

IC [A], COLLECTOR CURRENT

Figure 16. Inductive Load Collector Current / Voltage
Crossover (tc)

Figure 17. BJT Reverse Bias Safe Operating Area

3
o

TC = 25 C

HFE = 4

IC [mA], COLLECTOR CURRENT

IC [A], COLLECTOR CURRENT

VDD = +/-50V, RLOAD = 500Kohms

2

1

Single 80us Pulse
10

1

0.1

0
0

200

400

600

800

1000

1200

1400

1600

1800

0

2000

500

1000

1500

2000

VCE [V], COLLECTOR-EMITTER VOLTAGE

VCE [V], COLLECTOR-EMITTER VOLTAGE

Figure 18. ESBC RBSOA

Figure 19. Crossover Forward Bias Safe Operating
Area (FBSOA)

PD [W], POWER DISSIPATION

140

120

100

80

60

40

20

0
0

25

50

75

100

125

150

175

200

C o

T [ C], CASE TEMPERATURE

Figure 20. Power Derating

© 2013 Fairchild Semiconductor Corporation
FJBE2150D Rev. 1.4

www.fairchildsemi.com
7

FJBE2150D — ESBC™ Rated NPN Silicon Transistor

Typical Performance Characteristics (Continued)







Figure 21. Test Circuit for Inductive Load and Reverse Bias Safe Operating

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}ŠŠ

sT“–ˆ‹
sT“–ˆ‹

}•

pj A
pi

pj A

A

k|{

k|{

R\G}







Figure 22. Energy Rating Test Circuit

VCE

Figure 24. FBSOA

Figure 23. fT Measurement

© 2013 Fairchild Semiconductor Corporation
FJBE2150D Rev. 1.4

www.fairchildsemi.com
8

FJBE2150D — ESBC™ Rated NPN Silicon Transistor

Test Circuits

FJBE2150D — ESBC™ Rated NPN Silicon Transistor

Test Circuits (Continued)

Figure 25. Simplified Saturated Switch Driver Circuit

Functional Test Waveforms

Figure 26. Crossover Time Measurement

90% Vce

90% Ic

10% Vce

10% Ic

Figure 27. Saturated Switching Waveform

© 2013 Fairchild Semiconductor Corporation
FJBE2150D Rev. 1.4

www.fairchildsemi.com
9

Figure 29. Storage Time - ESBC FET
Gate (off) to IC Fall-Time

Figure 28. Storage Time - Common Emitter
Base Turn-off (Ib2) to IC Fall-Time

© 2013 Fairchild Semiconductor Corporation
FJBE2150D Rev. 1.4

www.fairchildsemi.com
10

FJBE2150D — ESBC™ Rated NPN Silicon Transistor

Functional Test Waveforms (Continued)

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Figure 30. 8 W; Secondary-Side Regulation: 3 Capacitor Input; Quasi Resonant

Driving ESBC Switches

Figure 31. VCC Derived

Figure 32. Vbias Supply Derived

© 2013 Fairchild Semiconductor Corporation
FJBE2150D Rev. 1.4

Figure 33. Proportional Drive

www.fairchildsemi.com
11

FJBE2150D — ESBC™ Rated NPN Silicon Transistor

Very Wide Input Voltage Range Supply







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© 2013 Fairchild Semiconductor Corporation
FJBE2150D Rev. 1.4

www.fairchildsemi.com
12

FJBE2150D — ESBC™ Rated NPN Silicon Transistor

Physical Dimensions

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