U217B B

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U217B/ U217B-FP
Zero Voltage Switch with Adjustable Ramp
Description
The integrated circuit, U217B, is designed as a zerovoltage switch in bipolar technology. It is used to control
resistive loads at mains by a triac in zero-crossing mode.
A ramp generator allows to realize power control function

by period group control, whereas full wave logic
guarantees that full mains cycles are used for load
switching.

Features

Applications

D
D
D
D

D Full wave power control
D Temperature regulation
D Power blinking switch

D
D
D
D

Direct supply from the mains
Current consumption ≤ 0.5 mA
Very few external components
Full wave drive – no dc current component in the load
circuit
Negative output current pulse typ. 100 mA –
short circuit protected
Simple power control
Ramp generator
Reference voltage

Package: DIP8, SO8

Block Diagram
95 10872

D1
220 kW
(250 V~)

R4

C2

2

R2
(Rsync)

8

R1

18 kW/
2W

Load
1000 W

C1
100 mF/
16 V

5

100 kW
2.2 mF/
10 V

1

Ramp
generator

7
Synchronization

Supply
GND

R5
15 kW
max

+
+
– Comparator

TIC
236N

6

100 W

Full wave logic

100 kW

R6

VM =
230 V~
MT2

3
4

min

L

BYT86/800

Pulse
amplifier

R3

MT1
G

Reference voltage
1.25 V

58 kW
N

Figure 1. Block diagram with typical circuit, period group control 0 to 100%

TELEFUNKEN Semiconductors
Rev. A1, 24-May-96

1 (11)

U217B/ U217B-FP
General Description

Firing Pulse Width tp, (Figure 4)

The integrated circuit, U217B, is a triac controller for the
zero crossing mode. It is meant to control power in
switching resistive loads of mains supply.

This depends on the latching current of the triac and its
load current. The firing pulse width is determined by the
zero crossing identification which can be influenced with
the help of sync. resistance, Rsync, (figure 6).

To avoid dc load on the mains, full wave logic guarantees
that complete mains cycles are used for load switching.
A fire pulse is released when the inverted input of the
comparator is negative (Pin 4) with respect to the non–
inverted input (Pin 3) and internal reference voltage.
A ramp generator with free selectable duration is possible
with capacitor C2 at Pin 2 which provides not only
symmetrical pulse burst control (figure 3), but also
control with superimposed proportional band (figure 10).
Ramp voltage available at capacitor C2 is decoupled
across emitter follower at Pin l. To maintain the lamp
flicker specification, ramp duration is adjusted according
to the controlling load. In practice, interference should be
avoided (temperature control). Therefore in such cases a
two point control is preferred to proportional control. One
can use internal reference voltage for simple applications.
In that case Pin 3 is inactive and connected to Pin 7
(GND), figure 9.
95 11306

2

tp =

w

whereas
=
IL
VM =
P
=

IL

arc. sin

Ǹ

VM

P 2
Latching current of the triac
Mains supply, effective
Power load (user’s power)

Total current consumption is influenced by the firing
pulse width, which can be calculated as follows:

+

R sync

Ǹ

V M 2 sin (w
2 )–0.6 V
–49 kW
3.5
10–5A
tp

10.00
Vmains = 230 V∼

1.00
t p ( ms )

Information regarding supply sync. is provided at Pin 8
via resistor RSync.

IL ( mA)

0.10

200
100

Ramp
control

1

50

0.01
10

100

1000

10000

P(W)

96 11939

Figure 4.

2
–VS

C2

2000
1600

t
V1
Final voltage
Vmin

1.4 V

RSync ( kW )

Figure 2. Pin 1 internal network

VM=230V AC
Tamb=25°C

1200

800

400

7.3 V
–VS(Pin5)

95 11307

Figure 3.

2 (11)

Initial voltage
Vmax

T

0
0
95 9978

300

600

900

tp ( ms )

1200

1500

Figure 5.

TELEFUNKEN Semiconductors
Rev. A1, 24-May-96

U217B/ U217B-FP
Triac Firing Current (Pulse)

Supply Voltage

This depends on the triac requirement. It can be limited
with gate series resistance which is calculated as follows:

The integrated circuit U217B (which also contains
internal voltage limiting) can be connected via the diode
(D1) and the resistor (R1) with the mains supply. An
internal climb circuit limits the voltage between Pin 5 and
7 to a typical value of 9.25 V.

RGmax



Series resistance R1 can be calculated (figures 7 and 8) as
follows:

7.5 V – VGmax – 36 W
IGmax

R1max = 0.85
IP =

IGmax

tp

T

50

6
VMains=230V

5
VMains=230V

X

2 R1

X

4
PR1 ( W )

40
R 1 ( kW )

(VM – VS)2

Itot
= IS + IP + Ix
whereas
VM = Mains voltage
= Limiting voltage of the IC
VS
= Total current consumption
Itot
= Current requirement of the IC (without load)
IS
= Current requirement of other peripheral
Ix
components
P(R1) = Power dissipation at R1

whereas:
= Gate voltage
VG
IGmax = Max. gate current
= Average gate current
Ip
= Firing pulse width
tp
T
= Mains period duration

30

20

3
2

10

1
0

0
0
95 10114

Vmin – VSmax
; P(R1) =
2 Itot

3

6

9

Itot ( mA )

Figure 6.

TELEFUNKEN Semiconductors
Rev. A1, 24-May-96

12

15

0
95 10116

3

6

9

12

15

Itot ( mA )

Figure 7.

3 (11)

U217B/ U217B-FP
Absolute Maximum Ratings
Reference point Pin 7
Parameters
Supply current
Sync. current
Output current ramp generator
Input voltages

Pin 5
Pin 8
Pin 1
Pin 1, 3, 4, 6
Pin 2
Pin 8

Symbol
–IS
ISync.
IO
–VI
–VI
±VI

Value
30
5
3
≤VS
2 to VS
≤ 7.3

Unit
mA
mA
mA
V

Ptot

mW

Tj
Tamb
Tstg

400
125
125
0 to 100
–40 to + 125

Symbol
RthJA

Maximum
200

Unit
K/W

Power dissipation
Tambb = 45°C
Tamb = 100°C
Junction temperature
Operating-ambient temperature range
Storage temperature range

°C
°C
°C

Thermal Resistance
Parameters
Junction ambient

Electrical Characteristics
–VS = 8.5 V, Tamb = 25°C, reference point Pin 7, unless otherwise specified
Parameters
Supply voltage limitation
Supply current
Voltage limitation
Synchronous current
Zero detector
Output pulse width

Test Conditions / Pin
–IS = 5 mA
Pin 5
Pin 5
I8 = ± 1 mA
Pin 8
Pin 8



VM= 230 V ,
Rsync = 220 kW
Rsync = 470 kW
V6 = 0 V
Pin 6

Output pulse current
Comparator
Input offset voltage
Pin 3,4
Input bias current
Pin 4
Common mode input
Pin 3,4
voltage
Threshold internal
V3 = 0 V
Pin 4
reference
Ramp generator, Pin 1, figure 1
Period
–IS= 1 mA, Isync =1 mA,
C1 = 100 mF, C2 = 1 mF,
R4= 100 kW
Final voltage
Initial voltage
Charge current
V2 = 0 V, I8 = –1 mA Pin 2

4 (11)

Symbol
–VS
–IS
± VI
±Isync
±Isync

Min
8.6
7.5
0.12

VI0
IIB
–VIC

100

–I2

mA
5

1

15
1
(VS–1)

1.25

0.9
6.8
13

Unit
V
mA
V
mA
mA

ms

260
460

–VT

T
V1

Max
9.9
500
8.7

35

tP
–IO

Typ
9.25

1.5
1.40
7.3
17

mV
mA
V
V

1.80
7.8
26

s
V

mA

TELEFUNKEN Semiconductors
Rev. A1, 24-May-96

U217B/ U217B-FP
Applications
L
RL
Load

270 kW

BYT86/800

VM = 230 V ~

18 kW
1.5 W

56 W
N

VDR
+5 V

8

6

7

5
CNY21

U217B
1

2

3

4

47 mF/
10 V

56 kW
II  1.5 mA

39 kW

VI

95 11308

Figure 8. Power switch
95 11309

2.2 mF/
10 V

R8

R4

470 kW

100 kW

BC237
NTC/M87
B value =
3988

R(25)

100 kW

100 kW

R5

8

R1

18 kW/
2W

Load
1000 W

C1

5

150 W

VM =
230 V~

7

Ramp
generator

Synchronization

+
+
–

Full wave logic

Supply

3

R9

220 kW

R2
(Rsync)

L

BYT86/800

1)

4

Rp

220 kW
(250 V~)

2
1

R6

D1
C2

6
Comparator

Pulse
amplifier

100 W
R3

Reference voltage
1.25 V

R7

130 kW

N

Figure 9. Temperature control 15 to 35°C with sensor monitoring
NTC–Sensor M 87 Fabr. Siemens

R(25) =100 kW/B =3988 ⇒

R(15) = 159 kW
R(35) = 64.5 kW

TELEFUNKEN Semiconductors
Rev. A1, 24-May-96

R51) determines the proportional range

5 (11)

U217B/ U217B-FP
L
0.5 ...
2.2 kW
VM= 230 V ~

N

270 kW

BYT86/800

100 nF/
250 V ~

18 kW/
1.5 W
56 W

82 W

8

7

6

5

U217B
1
150 kW
47 mF/ 16V

2

3

4
110 kW
0.47 mF/
10 V

95 11310

Figure 10. Power blinking switch with f

6 (11)

 2.7 Hz, duty cycle 1:1, power range 0.5 to 2.2 kW

TELEFUNKEN Semiconductors
Rev. A1, 24-May-96

U217B/ U217B-FP
L

–DT

BYT86/800
Load

1N4148

R1

0.35 ...
1.5 kW

R4

510 kW

680 kW
R5

VM = 230 V ~

680 kW

R2

N

13 kW/2 W

R3

62 W

IH = 50 mA

1N4148
8

7

6

R16

5

220 kW
R6

U217B

9.1 kW
R7

1
R10

910 kW

2

3

R15

C3

R9

C4
100 mF/
12 V
47 mF

25 kW

10 nF

C1
NTC
33 kW

12 kW
C5

12 kW

4

R8

56 kW

2.2 mF
C2

1 mF

95 11311

Figure 11. Room temperature control with definite reduction (remote control) for a temperature range 5 to 30°C

TELEFUNKEN Semiconductors
Rev. A1, 24-May-96

7 (11)

U217B/ U217B-FP
L
220 kW

Load/ 1000 W

BYT51G

VM = 230 V ~

18 kW
1.5 W
56 W

VDR
N

8

7

6

5
220 kW
(680 kW)

U217B
1

2

3

4

10 nF
68 mF/
10 V

500 kW
(2 MW)

50 kW
(200 kW)

NTC

95 11312

Figure 12. Two–point temperature control for a temperature range 15 to 30°C

8 (11)

TELEFUNKEN Semiconductors
Rev. A1, 24-May-96

U217B/ U217B-FP
L
D1
Rsync

BYT51G

430 kW

Load/400 W
VM = 230 V~

R1

18 kW/
1.5 W

92 W
N

R3
8

6

7

5
NTC

U217B

200 kW

D2
1N4148
1

2

3

4
R6

R15/ 50 kW

27 kW
330 kW

R4/ 39 kW

R5

R7/ 8.2 kW

C2
150 nF

C3

33 mF/
10 V

C1

68 mF/
10 V

95 11313

Figure 13. Two-point temperature control for a temperature range 18 to 32°C and hysteresis of ± 0.5°C at 25°C

TELEFUNKEN Semiconductors
Rev. A1, 24-May-96

9 (11)

U217B/ U217B-FP
Dimension in mm
Package: DIP8

94 8873

Package: SO8

94 8862

10 (11)

TELEFUNKEN Semiconductors
Rev. A1, 24-May-96

U217B/ U217B-FP
Ozone Depleting Substances Policy Statement
It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs).
The Montreal Protocol ( 1987) and its London Amendments ( 1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of
continuous improvements to eliminate the use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain
such substances.

We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized
application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of,
directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423

TELEFUNKEN Semiconductors
Rev. A1, 24-May-96

11 (11)
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