U217B B

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U217B/ U217B-FP
TELEFUNKEN Semiconductors
Rev. A1, 24-May-96 1 (11)
Zero Voltage Switch with Adjustable Ramp
Description
The integrated circuit, U217B, is designed as a zero-
voltage switch in bipolar technology. It is used to control
resistive loads at mains by a triac in zero-crossing mode.
A ramp generator allows to realize power control function
by period group control, whereas full wave logic
guarantees that full mains cycles are used for load
switching.
Features
Direct supply from the mains
Current consumption ≤ 0.5 mA
Very few external components
Full wave drive – no dc current component in the load
circuit
Negative output current pulse typ. 100 mA –
short circuit protected
Simple power control
Ramp generator
Reference voltage
Applications
Full wave power control
Temperature regulation
Power blinking switch
Package: DIP8, SO8
Block Diagram
Ramp
generator
Pulse
amplifier
Comparator
R118 k
2 W
D1BYT86/800 L
TIC
236N
95 10872
Synchronization Supply
Full wave logic
+
–
Reference voltage
1.25 V
1
3
4
R4
100 k 2 8 5
C2
2.2 F/
10 V
R5
15 k
min
max
100 k
R6
58 k
7
6
220 k
C1
100
R3
Load
1000 W
VM=
230 V~
N
(Rsync)
R2
(250 V~)
G
MT2
MT1
GND
+
100 F/
16 V
Figure 1. Block diagram with typical circuit, period group control 0 to 100%
U217B/ U217B-FP
TELEFUNKEN Semiconductors
Rev. A1, 24-May-96
2 (11)
General Description
The integrated circuit, U217B, is a triac controller for the
zero crossing mode. It is meant to control power in
switching resistive loads of mains supply.
Information regarding supply sync. is provided at Pin 8
via resistor RSync.
To avoid dc load on the mains, full wave logic guarantees
that complete mains cycles are used for load switching.
A fire pulse is released when the inverted input of the
comparator is negative (Pin 4) with respect to the non–
inverted input (Pin 3) and internal reference voltage.
A ramp generator with free selectable duration is possible
with capacitor C2 at Pin 2 which provides not only
symmetrical pulse burst control (figure 3), but also
control with superimposed proportional band (figure 10).
Ramp voltage available at capacitor C2 is decoupled
across emitter follower at Pin l. To maintain the lamp
flicker specification, ramp duration is adjusted according
to the controlling load. In practice, interference should be
avoided (temperature control). Therefore in such cases a
two point control is preferred to proportional control. One
can use internal reference voltage for simple applications.
In that case Pin 3 is inactive and connected to Pin 7
(GND), figure 9.
Ramp
control
1
C2
–VS
95 11306
2
Figure 2. Pin 1 internal network
95 11307
V1
1.4 V
7.3 V
–VS(Pin5)
T
Vmin
t
Final voltage
Initial voltage
Vmax
Figure 3.
Firing Pulse Width tp, (Figure 4)
This depends on the latching current of the triac and its
load current. The firing pulse width is determined by the
zero crossing identification which can be influenced with
the help of sync. resistance, Rsync, (figure 6).
tp = 2arc. sin IL VM
P2
whereas
IL= Latching current of the triac
VM= Mains supply, effective
P = Power load (user’s power)
Total current consumption is influenced by the firing
pulse width, which can be calculated as follows:
Rsync
VM2sin ( tp
2)–0.6 V
3.5 10–5A–49 k
0.01
0.10
1.00
10.00
10 100 1000 10000
t ( ms )
P ( W )96 11939
p
IL ( mA)
100
200
50
Vmains = 230 V∼
Figure 4.
0 300 600 900 1200
0
400
800
1200
2000
R ( k )
Sync
tp ( s )
1500
95 9978
1600
VM=230V AC
Tamb=25°C
Figure 5.
U217B/ U217B-FP
TELEFUNKEN Semiconductors
Rev. A1, 24-May-96 3 (11)
Triac Firing Current (Pulse)
This depends on the triac requirement. It can be limited
with gate series resistance which is calculated as follows:
RGmax 7.5 V – VGmax
IGmax – 36
IP =IGmax
Ttp
whereas:
VG= Gate voltage
IGmax = Max. gate current
Ip= Average gate current
tp= Firing pulse width
T = Mains period duration
Supply Voltage
The integrated circuit U217B (which also contains
internal voltage limiting) can be connected via the diode
(D1) and the resistor (R1) with the mains supply. An
internal climb circuit limits the voltage between Pin 5 and
7 to a typical value of 9.25 V.
Series resistance R1 can be calculated (figures 7 and 8) as
follows:
R1max = 0.85 Vmin – VSmax
2 Itot ;
P(R1) = (VM – VS)2
2 R1
Itot = IS + IP + Ix
whereas
VM= Mains voltage
VS= Limiting voltage of the IC
Itot = Total current consumption
IS= Current requirement of the IC (without load)
Ix= Current requirement of other peripheral
components
P(R1) = Power dissipation at R1
03 6 912
0
10
20
30
40
50
R ( k )
1
Itot ( mA )
15
95 10114
VMains=230V
Figure 6.
03 6 912
0
I
tot ( mA )
15
95 10116
VMains=230V
1
2
3
4
6
P ( W )
5
R1
Figure 7.
U217B/ U217B-FP
TELEFUNKEN Semiconductors
Rev. A1, 24-May-96
4 (11)
Absolute Maximum Ratings
Reference point Pin 7
Parameters Symbol Value Unit
Supply current Pin 5 –IS30 mA
Sync. current Pin 8 ISync. 5mA
Output current ramp generator Pin 1 IO3 mA
Input voltages Pin 1, 3, 4, 6
Pin 2
Pin 8
–VI
–VI
±VI
≤VS
2 to VS
≤7.3
V
Power dissipation
Tb=45
°
C
P
400
mW
T
amb =
45°C
Tamb = 100°C
P
tot
400
125 m
W
Junction temperature Tj125 °C
Operating-ambient temperature range Tamb 0 to 100 °C
Storage temperature range Tstg –40 to + 125 °C
Thermal Resistance
Parameters Symbol Maximum Unit
Junction ambient RthJA 200 K/W
Electrical Characteristics
–VS = 8.5 V, Tamb = 25°C, reference point Pin 7, unless otherwise specified
Parameters Test Conditions / Pin Symbol Min Typ Max Unit
Supply voltage limitation –IS = 5 mA Pin 5 –VS8.6 9.25 9.9 V
Supply current Pin 5 –IS500 A
Voltage limitation I8 = ± 1 mA Pin 8 ± VI7.5 8.7 V
Synchronous current Pin 8 ±Isync 0.12 mA
Zero detector ±Isync 35 A
Output pulse width VM= 230 V ,
Rsync = 220 k
Rsync = 470 k tP260
460 s
Output pulse current V6 = 0 V Pin 6 –IO100 mA
Comparator
Input offset voltage Pin 3,4 VI0 5 15 mV
Input bias current Pin 4 IIB 1 A
Common mode input
voltage Pin 3,4 –VIC 1 (VS–1) V
Threshold internal
reference V3 = 0 V Pin 4 –VT1.25 V
Ramp generator, Pin 1, figure 1
Period –IS= 1 mA, Isync =1 mA,
C1 = 100 F, C2 = 1 F,
R4= 100 k T 1.5 s
Final voltage V10.9 1.40 1.80 V
Initial voltage
1
6.8 7.3 7.8
Charge current V2 = 0 V, I8 = –1 mA Pin 2 –I213 17 26 A
U217B/ U217B-FP
TELEFUNKEN Semiconductors
Rev. A1, 24-May-96 5 (11)
Applications
8765
1234
U217B
VDR
RL270 k
VM = 230 V ~
56
56 k
39 k
47 F/
10 V
II 1.5 mA
BYT86/800
18 k
1.5 W
L
N
+5 V
CNY21
VI
95 11308
Load
Figure 8. Power switch
Ramp
generator
Pulse
amplifier
Comparator
R118 k /
2 W
D1BYT86/800 L
95 11309
Synchronization Supply
Full wave logic
+
–
Reference voltage
1.25 V
1
3
4
R4
100 k 28 5
2.2 F/
10 V
R9
150
7
6
220 k
C1
100
R3
Load
1000 W
VM =
230 V~
N
(Rsync)
R2
(250 V~)
R51)
BC237
R6
100 k
R8
470 k
R(25)
100 k
NTC/M87
B value =
3988
R7
130 k
Rp
220 k
+
C2
Figure 9. Temperature control 15 to 35°C with sensor monitoring
NTC–Sensor M 87 Fabr. Siemens
R(25) =100 k /B =3988 ⇒R51) determines the proportional rangeR(15) = 159 k
R(35) = 64.5 k
U217B/ U217B-FP
TELEFUNKEN Semiconductors
Rev. A1, 24-May-96
6 (11)
8765
1234
U217B
270 k
VM= 230 V ~
56
BYT86/800
18 k /
1.5 W
L
N
95 11310
100 nF/
250 V ~
82
0.5 ...
2.2 kW
110 k150 k
47 F/ 16V 0.47 F/
10 V
Figure 10. Power blinking switch with f 2.7 Hz, duty cycle 1:1, power range 0.5 to 2.2 kW
U217B/ U217B-FP
TELEFUNKEN Semiconductors
Rev. A1, 24-May-96 7 (11)
8765
1234
U217B
510 k
VM = 230 V ~
62
BYT86/800
L
N
95 11311
0.35 ...
1.5 kW
910 k
R2
IH = 50 mA
Load R1
9.1 k
R6
1N4148
R16
220 k
R7
12 k
C3
10 nF
R10
25 k
R15
NTC
33 k
R9
12 k
56 k
R8C2
1 F
C4
47 F
100 F/
12 V
C5
C1
2.2 F
R3
R5
680 k
680 k
R4
13 k /2 W
1N4148
– T
Figure 11. Room temperature control with definite reduction (remote control) for a temperature range 5 to 30°C
U217B/ U217B-FP
TELEFUNKEN Semiconductors
Rev. A1, 24-May-96
8 (11)
8765
1234
U217B
220 k
56
BYT51G
18 k
1.5 W
L
N
95 11312
Load/ 1000 W
68 F/
10 V
VDR
10 nF
220 k
500 k
50 k
NTC
VM = 230 V ~
(680 k
(2 M
(200 k
Figure 12. Two–point temperature control for a temperature range 15 to 30°C
U217B/ U217B-FP
TELEFUNKEN Semiconductors
Rev. A1, 24-May-96 9 (11)
8765
1234
U217B
430 k
VM = 230 V~
92
BYT51G
18 k /
1.5 W
L
N
95 11313
68 F/
10 V
Load/400 W Rsync
R3
27 k
330 k
R5
8.2 k
R7/
C1
C2
150 nF
R15/50 k
R4/39 k
R1
D1
200 k
NTC
D2
1N4148
33 F/
10 V
C3
R6
Figure 13. Two-point temperature control for a temperature range 18 to 32°C and hysteresis of ± 0.5°C at 25°C
U217B/ U217B-FP
TELEFUNKEN Semiconductors
Rev. A1, 24-May-96
10 (11)
Dimension in mm
Package: DIP8
94 8873
Package: SO8
94 8862
U217B/ U217B-FP
TELEFUNKEN Semiconductors
Rev. A1, 24-May-96 11 (11)
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It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of
continuous improvements to eliminate the use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain
such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized
application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of,
directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423

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