AO3400 Datasheet. Www.s Manuals.com. R8 Ao

User Manual: Marking of electronic components, SMD Codes A0*, A0**, A0-**, A0-***, A00, A01, A02, A03, A04, A06, A08, A09, A09*, A0=**, A0=***. Datasheets 74AHC1G00GV, 74AHC1G08GV, 74AHC1G09GV, AO3400, ELM9709NBA, HSMS-2800, HSMS-280B, MMBT3904T, MMBT3906T, RT8008-25GJ5, RT8008-25PJ5, RT8209BGQW, RT9011-DKPQV, RT9011-JSPJ6, RT9026GFP, RT9026PFP, RT9193-17PU5, RT9818E-23PY, SST201, SST202, SST203, SST204.

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AO3400
30V N-Channel MOSFET

General Description

Product Summary

The AO3400 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is suitable for use as a
load switch or in PWM applications.

ID (at VGS=10V)

VDS

30V
5.8A

RDS(ON) (at VGS=10V)

< 28mΩ

RDS(ON) (at VGS = 4.5V)

< 33mΩ

RDS(ON) (at VGS = 2.5V)

< 52mΩ

SOT23
Top View

D

Bottom View

D

D

G

S

G
S

S

G

Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage

VGS
TA=25°C

Continuous Drain
Current
Pulsed Drain Current

C

Power Dissipation B

Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead

Rev 8: Dec 2011

Steady-State
Steady-State

A

30
W

0.9

TJ, TSTG

Symbol
t ≤ 10s

V

1.4

PD

TA=70°C

±12
4.9

IDM
TA=25°C

Units
V

5.8

ID

TA=70°C

Maximum
30

RθJA
RθJL

www.aosmd.com

-55 to 150

Typ
70
100
63

°C

Max
90
125
80

Units
°C/W
°C/W
°C/W

Page 1 of 5

AO3400

Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol

Parameter

STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
IDSS

Zero Gate Voltage Drain Current

Conditions

Min

ID=250µA, VGS=0V
TJ=55°C

Gate-Body leakage current

VDS=0V, VGS= ±12V
VDS=VGS ID=250µA

0.65

ID(ON)

On state drain current

VGS=4.5V, VDS=5V

30

100

nA

1.05

1.45

V

18

28

28

39

VGS=4.5V, ID=5A

19

33

mΩ

VGS=2.5V, ID=4A

24

52

mΩ

VGS=10V, ID=5.8A
TJ=125°C

A

gFS

Forward Transconductance

VDS=5V, ID=5.8A

33

VSD

Diode Forward Voltage

IS=1A,VGS=0V

0.7

IS

Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Rg

Gate resistance

VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz

Gate Source Charge

Qgd

Gate Drain Charge

tD(on)

Turn-On DelayTime

tr

Turn-On Rise Time

tD(off)

Turn-Off DelayTime

tf

Turn-Off Fall Time

trr

Body Diode Reverse Recovery Time

Qrr

VGS=4.5V, VDS=15V, ID=5.8A

1.5

mΩ

S
1

V

2

A

630

pF

75

pF

50

SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs

µA

5

Gate Threshold Voltage

Units
V

1

IGSS

Static Drain-Source On-Resistance

Max

30

VDS=30V, VGS=0V

VGS(th)

RDS(ON)

Typ

pF

3

4.5

6

7

Ω
nC

1.3

nC

1.8

nC

3

ns

VGS=10V, VDS=15V, RL=2.6Ω,
RGEN=3Ω

2.5

ns

25

ns

4

ns

IF=5.8A, dI/dt=100A/µs

8.5

Body Diode Reverse Recovery Charge IF=5.8A, dI/dt=100A/µs

2.6

ns
nC

A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev 8: Dec 2011

www.aosmd.com

Page 2 of 5

AO3400

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40

15
10V

35

3V

VDS=5V

4.5V

12

30
2.5V

9
ID(A)

ID (A)

25
20

6

15

25°C

125°C

10

3

VGS=2V
5

0

0
0

1

2

3

4

0

5

30

1

1.5

2

2.5

3

Normalized On-Resistance

1.8

25
RDS(ON) (mΩ
Ω)

0.5

VGS(Volts)
Figure 2: Transfer Characteristics (Note E)

VDS (Volts)
Fig 1: On-Region Characteristics (Note E)

VGS=4.5V
20

15

VGS=10V

VGS=4.5V
Id=5A

1.6
1.4

17

1.2

5
VGS=10V
Id=5.8A2
10

1
0.8

10
0

0

5

10
15
20
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)

25

50

75

100

125

150

175

0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)

50

1.0E+01
ID=5.8A
1.0E+00

40

40

125°C
30

IS (A)

RDS(ON) (mΩ
Ω)

1.0E-01
125°C
1.0E-02
25°C
1.0E-03
20
1.0E-04
25°C
1.0E-05

10
0

4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)

Rev 8: Dec 2011

2

www.aosmd.com

0.0

0.2

0.4

0.6

0.8

1.0

VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)

Page 3 of 5

AO3400

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5

1000
VDS=15V
ID=5.8A

4

800
Capacitance (pF)

VGS (Volts)

Ciss
3

2

600

400
Coss

1

200

0

0
0

2
4
6
Qg (nC)
Figure 7: Gate-Charge Characteristics

8

Crss
0

5
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics

30

1000

100.0

TA=25°C

10µs

RDS(ON)
limited

100µs
1ms

1.0

10ms
0.1

TJ(Max)=150°C
TA=25°C

Power (W)

ID (Amps)

10.0

100

10

10s
DC

1

0.0

0.00001
0.01

0.1

1
VDS (Volts)

10

0.001

0.1

10

1000

100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)

Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)

Zθ JA Normalized Transient
Thermal Resistance

10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1

In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

RθJA=125°C/W

0.1

PD

0.01
Single Pulse

Ton

T

0.001
0.00001

0.0001

0.001

0.01

0.1

1

10

100

1000

Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

Rev 8: Dec 2011

www.aosmd.com

Page 4 of 5

AO3400

Gate Charge Test Circuit & Waveform
Vgs
Qg

10V

+

+ Vds

VDC

-

Qgs

Qgd

VDC

DUT

-

Vgs
Ig
Charge

R es istiv e S w itch ing T e st C ircu it & W a ve fo rm s
RL
V ds
Vds

DUT

Vgs

90 %

+

Vdd

VDC

-

Rg

1 0%

Vgs

V gs

t d (o n )

tr

t d (o ff)

to n

tf
t o ff

D iode R ecovery T est C ircuit & W aveform s
Q rr = -

V ds +

Idt

DUT
V gs

V ds -

Isd
V gs

Ig

Rev 8: Dec 2011

L

Isd

+
VD C

-

IF

t rr

dI/dt
I RM

V dd

V dd
V ds

www.aosmd.com

Page 5 of 5

www.s-manuals.com



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