AO3400 Datasheet. Www.s Manuals.com. R8 Ao

User Manual: Marking of electronic components, SMD Codes A0*, A0**, A0-**, A0-***, A00, A01, A02, A03, A04, A06, A08, A09, A09*, A0=**, A0=***. Datasheets 74AHC1G00GV, 74AHC1G08GV, 74AHC1G09GV, AO3400, ELM9709NBA, HSMS-2800, HSMS-280B, MMBT3904T, MMBT3906T, RT8008-25GJ5, RT8008-25PJ5, RT8209BGQW, RT9011-DKPQV, RT9011-JSPJ6, RT9026GFP, RT9026PFP, RT9193-17PU5, RT9818E-23PY, SST201, SST202, SST203, SST204.

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AO3400

30V N-Channel MOSFET

General Description Product Summary

V

DS

I

D

(at V

GS

=10V) 5.8A

R

DS(ON)

(at V

GS

=10V) < 28mΩ

R

DS(ON)

(at V

GS

= 4.5V) < 33mΩ

R

DS(ON)

(at V

GS

= 2.5V) < 52mΩ

Symbol

V

DS

The AO3400 combines advanced trench MOSFET

technology with a low resistance package to provide

extremely low R

DS(ON)

. This device is suitable for use as a

load switch or in PWM applications.

V

Maximum UnitsParameter

Absolute Maximum Ratings T

A

=25°C unless otherwise noted

30V

Drain-Source Voltage

30

G

D

S

SOT23

Top View Bottom View

D

G

S

G

S

D

V

DS

V

GS

I

DM

T

J

, T

STG

Symbol

t ≤ 10s

Steady-State

Steady-State

R

θJL

1.4

Maximum Junction-to-Lead °C/W

°C/W

Maximum Junction-to-Ambient

A D

63

125

80

Maximum Junction-to-Ambient

A

Units

A

I

D

5.8

4.9

30

T

A

=25°C

T

A

=70°C

Pulsed Drain Current

C

Continuous Drain

Current

V

V±12Gate-Source Voltage

Drain-Source Voltage

30

Parameter Typ Max

°C/W

R

θJA

70

100

90

0.9

T

A

=70°C

Junction and Storage Temperature Range -55 to 150 °C

Thermal Characteristics

Power Dissipation

B

P

D

T

A

=25°C W

G

D

S

SOT23

Top View Bottom View

D

G

S

G

S

D

Rev 8: Dec 2011

www.aosmd.com Page 1 of 5

AO3400

Symbol Min Typ Max Units

BV

DSS

30 V

V

DS

=30V, V

GS

=0V 1

T

J

=55°C 5

I

GSS

100 nA

V

GS(th)

Gate Threshold Voltage 0.65 1.05 1.45 V

I

D(ON)

30 A

18 28

T

J

=125°C 28 39

19 33 mΩ

24 52 mΩ

g

FS

33 S

V

SD

0.7 1 V

I

S

2 A

C

iss

630 pF

C

oss

75 pF

C

rss

50 pF

R

g

1.5 3 4.5 Ω

Q

g

6 7 nC

Q

gs

1.3 nC

Q

gd

1.8 nC

t

D(on)

3 ns

t

2.5

ns

Reverse Transfer Capacitance

V

GS

=0V, V

DS

=15V, f=1MHz

SWITCHING PARAMETERS

Electrical Characteristics (T

J

=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter Conditions

Drain-Source Breakdown Voltage

On state drain current

I

D

=250µA, V

GS

=0V

V

GS

=4.5V, V

DS

=5V

V

GS

=10V, I

D

=5.8A

Forward Transconductance

Diode Forward Voltage I

S

=1A,V

GS

=0V

V

DS

=5V, I

D

=5.8A

V

GS

=2.5V, I

D

=4A

V

GS

=4.5V, I

D

=5A

R

DS(ON)

Static Drain-Source On-Resistance

I

DSS

µA

V

DS

=V

GS

I

D

=250µA

V

DS

=0V, V

GS

= ±12V

Zero Gate Voltage Drain Current

Gate-Body leakage current

mΩ

Gate resistance V

GS

=0V, V

DS

=0V, f=1MHz

Total Gate Charge

V

GS

=4.5V, V

DS

=15V, I

D

=5.8A

Gate Source Charge

Gate Drain Charge

Maximum Body-Diode Continuous Current

Input Capacitance

Output Capacitance

Turn-On DelayTime

DYNAMIC PARAMETERS

Turn-On Rise Time

V

=10V, V

=15V, R

=2.6

Ω

,

t

r

2.5

ns

t

D(off)

25 ns

t

f

4 ns

t

rr

8.5 ns

Q

rr

2.6 nC

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

I

F

=5.8A, dI/dt=100A/µs

Body Diode Reverse Recovery Time

Turn-Off Fall Time

Body Diode Reverse Recovery Charge I

F

=5.8A, dI/dt=100A/µs

Turn-On Rise Time

Turn-Off DelayTime

V

GS

=10V, V

DS

=15V, R

L

=2.6

Ω

,

R

GEN

=3Ω

A. The value of RθJA is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The

value in any given application depends on the user's specific board design.

B. The power dissipation PDis based on TJ(MAX)=150°C, using ≤10s junction-to-ambient thermal resistance.

C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep

initialTJ=25°C.

D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2FR-4 board with

2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.

Rev 8: Dec 2011 www.aosmd.com Page 2 of 5

AO3400

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

17

5

2

10

0

18

0

3

6

9

12

15

0 0.5 1 1.5 2 2.5 3

ID(A)

VGS(Volts)

Figure 2: Transfer Characteristics (Note E)

10

15

20

25

30

0 5 10 15 20

RDS(ON) (mΩ

Ω

Ω

Ω)

ID(A)

Figure 3: On-Resistance vs. Drain Current and Gate

Voltage (Note E)

0.8

1

1.2

1.4

1.6

1.8

0 25 50 75 100 125 150 175

Normalized On-Resistance

Temperature (°C)

Figure 4: On-Resistance vs. Junction Temperature

(Note E)

VGS=4.5V

Id=5A

VGS=10V

Id=5.8A

25°C

125°C

V

DS

=5V

VGS=4.5V

VGS=10V

0

5

10

15

20

25

30

35

40

012345

ID(A)

VDS (Volts)

Fig 1: On-Region Characteristics (Note E)

VGS=2V

3V

4.5V

10V

2.5V

40

0

3

6

9

12

15

0 0.5 1 1.5 2 2.5 3

ID(A)

VGS(Volts)

Figure 2: Transfer Characteristics (Note E)

10

15

20

25

30

0 5 10 15 20

RDS(ON) (mΩ

Ω

Ω

Ω)

ID(A)

Figure 3: On-Resistance vs. Drain Current and Gate

Voltage (Note E)

1.0E-05

1.0E-04

1.0E-03

1.0E-02

1.0E-01

1.0E+00

1.0E+01

0.0 0.2 0.4 0.6 0.8 1.0

IS(A)

VSD (Volts)

Figure 6: Body-Diode Characteristics (Note E)

25°C

125°C

0.8

1

1.2

1.4

1.6

1.8

0 25 50 75 100 125 150 175

Normalized On-Resistance

Temperature (°C)

Figure 4: On-Resistance vs. Junction Temperature

(Note E)

VGS=4.5V

Id=5A

VGS=10V

Id=5.8A

10

20

30

40

50

0 2 4 6 8 10

RDS(ON) (mΩ

Ω

Ω

Ω)

VGS (Volts)

Figure 5: On-Resistance vs. Gate-Source Voltage

(Note E)

25°C

125°C

V

DS

=5V

VGS=4.5V

VGS=10V

ID=5.8A

25°C

125°C

0

5

10

15

20

25

30

35

40

012345

ID(A)

VDS (Volts)

Fig 1: On-Region Characteristics (Note E)

VGS=2V

3V

4.5V

10V

2.5V

Rev 8: Dec 2011 www.aosmd.com Page 3 of 5

AO3400

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

0

1

2

3

4

5

02468

VGS (Volts)

Qg(nC)

Figure 7: Gate-Charge Characteristics

0

200

400

600

800

1000

0 5 10 15 20 25 30

Capacitance (pF)

VDS (Volts)

Figure 8: Capacitance Characteristics

Ciss

Coss

C

rss

VDS=15V

ID=5.8A

1

10

100

1000

0.00001 0.001 0.1 10 1000

Power (W)

Pulse Width (s)

Figure 10: Single Pulse Power Rating Junction-to-

Ambient (Note F)

TA=25°C

0.0

0.1

1.0

10.0

100.0

0.01 0.1 1 10 100

ID(Amps)

VDS (Volts)

Figure 9: Maximum Forward Biased Safe

Operating Area (Note F)

10

µ

s

10s

1ms

DC

RDS(ON)

limited

TJ(Max)=150°C

T

A

=25°C

100

µ

s

10ms

0

1

2

3

4

5

02468

VGS (Volts)

Qg(nC)

Figure 7: Gate-Charge Characteristics

0

200

400

600

800

1000

0 5 10 15 20 25 30

Capacitance (pF)

VDS (Volts)

Figure 8: Capacitance Characteristics

Ciss

Coss

C

rss

VDS=15V

ID=5.8A

1

10

100

1000

0.00001 0.001 0.1 10 1000

Power (W)

Pulse Width (s)

Figure 10: Single Pulse Power Rating Junction-to-

Ambient (Note F)

TA=25°C

0.0

0.1

1.0

10.0

100.0

0.01 0.1 1 10 100

ID(Amps)

VDS (Volts)

Figure 9: Maximum Forward Biased Safe

Operating Area (Note F)

10

µ

s

10s

1ms

DC

RDS(ON)

limited

TJ(Max)=150°C

T

A

=25°C

100

µ

s

10ms

0.001

0.01

0.1

1

10

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

Zθ

θ

θ

θJA Normalized Transient

Thermal Resistance

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

Single Pulse

D=Ton/T

TJ,PK=TA+PDM.ZθJA.RθJA

T

on

T

P

D

In descending order

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

RθJA=125°C/W

Rev 8: Dec 2011 www.aosmd.com Page 4 of 5

AO3400

-

+

VDC

Ig

Vds

DUT

-

+

VDC

Vgs

Vgs

10V

Qg

Qgs Qgd

Charge

Gate Charge Test Circuit & Waveform

DUT Vgs

Diode Recovery Test Circuit & W aveform s

Vds +

rr

Q = - Idt

t

-

+

VD C

DU T Vdd

Vgs

Vds

Vgs

RL

Rg

Vgs

Vds

10%

90%

Resistive Sw itching Test Circuit & W aveform s

t t

r

d(on)

t

on

t

d(off)

t

f

t

off

-

+

VDC

Ig

Vds

DUT

-

+

VDC

Vgs

Vgs

10V

Qg

Qgs Qgd

Charge

Gate Charge Test Circuit & Waveform

Ig

Vgs

-

+

VDC

DUT

L

Vgs

Vds

Isd

Isd

Diode Recovery Test Circuit & W aveform s

Vds -

Vds +

I

F

dI/dt

I

RM

rr

Vdd

Vdd

Q = - Idt

t

rr

-

+

VD C

DU T Vdd

Vgs

Vds

Vgs

RL

Rg

Vgs

Vds

10%

90%

Resistive Sw itching Test Circuit & W aveform s

t t

r

d(on)

t

on

t

d(off)

t

f

t

off

Rev 8: Dec 2011 www.aosmd.com Page 5 of 5

www.s-manuals.com