AO4407 Datasheet. Www.s Manuals.com. Ao
User Manual: Marking of electronic components, SMD Codes 44, 44-, 4407, 441NL, 4430, 4435GM, 4435GYT, 4459, 4459A, 4466, 4468, 449, 4496, 44T, 44W, 44p, 44s, 44t. Datasheets AO4407, AO4430L, AO4459L, AO4466L, AO4468L, AO4496L, AP4435GM, AP4435GM-HF, AP4435GYT-HF, BAS40-04, BAS40-04T, BAT54SW, FMMT449, SST441NL, Si4459ADY, TK71544AS.
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AO4407 30V P-Channel MOSFET General Description Product Summary The AO4407 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. ID (at VGS=-20V) -30V -12A RDS(ON) (at VGS=-20V) < 13mΩ VDS RDS(ON) (at VGS =-10V) < 14mΩ RDS(ON) (at VGS =-5V) < 30mΩ * RoHS and Halogen-Free Compliant 100% UIS Tested 100% Rg Tested SOIC-8 Top View D D D Bottom View D D G G S S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current VGS TA=25°C Units V ±25 V -12 ID TA=70°C Maximum -30 -10 A Pulsed Drain Current C IDM Avalanche Current C IAS, IAR 26 A Avalanche energy L=0.3mH C TA=25°C EAS, EAR 101 mJ Power Dissipation B Junction and Storage Temperature Range Rev.14.0: July 2013 3.1 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead -60 TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State W 2 RθJA RθJL www.aosmd.com -55 to 150 Typ 31 59 16 °C Max 40 75 24 Units °C/W °C/W °C/W Page 1 of 5 AO4407 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250µA, VGS=0V -30 Typ -1 TJ=55°C -5 Gate-Body leakage current VDS=0V, VGS= ±25V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1.7 ID(ON) On state drain current VGS=-10V, VDS=-5V -60 ±100 nA -2.8 V VGS=-20V, ID=-12A 8.5 13 mΩ VGS=-10V, ID=-12A 10 14 12 19 30 A Static Drain-Source On-Resistance VGS=-5V, ID=-7A 19 gFS Forward Transconductance VDS=-5V, ID=-10.5A 27 VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current TJ=125°C -0.72 DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance Reverse Transfer Capacitance Rg Gate resistance 2060 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime 24 VGS=-10V, VDS=-15V, ID=-12A VGS=-10V, VDS=-15V, RL=1.25Ω, RGEN=3Ω mΩ S V -4 A 2600 pF 370 1.2 mΩ -1 pF 295 SWITCHING PARAMETERS Qg Total Gate Charge Qgs µA -2.25 RDS(ON) Crss Units V VDS=-30V, VGS=0V IGSS Coss Max pF 2.4 3.6 30 36 Ω nC 4.6 nC 10 nC 11 ns 9.4 ns 24 ns tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=-12A, dI/dt=100A/µs 30 Qrr Body Diode Reverse Recovery Charge IF=-12A, dI/dt=100A/µs 22 12 ns 40 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.14.0: July 2013 www.aosmd.com Page 2 of 5 AO4407 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80 80 -10V -6V VDS=-5V -5V 60 -ID(A) -ID (A) 60 -4.5V 40 125°C 20 -4V 20 40 25°C VGS=-3.5V 0 0 0 1 2 3 4 1 5 3 4 5 6 VGS(Volts) Figure 2: Transfer Characteristics (Note E) -VDS (Volts) Fig 1: On-Region Characteristics (Note E) 30 Normalized On-Resistance 1.6 25 VGS=-5V RDS(ON) (mΩ Ω) 2 20 15 10 VGS=-10V 5 0 VGS=-10V ID=-12A 1.4 17 5 2 10 1.2 1 VGS=-5V ID=-7A 0.8 0 0 5 10 15 20 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 30 1.0E+01 ID=-12A 1.0E+00 25 40 20 125°C IS (A) RDS(ON) (mΩ Ω) 1.0E-01 125°C 1.0E-02 15 25°C 1.0E-03 25°C 10 1.0E-04 1.0E-05 5 2 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.14.0: July 2013 4 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 5 AO4407 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3000 10 VDS=-15V ID=-12A 2500 Ciss Capacitance (pF) -VGS (Volts) 8 6 4 2 2000 1500 1000 Coss 500 0 Crss 0 0 5 10 15 20 25 Qg (nC) Figure 7: Gate-Charge Characteristics 30 0 1000.0 5 10 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics 30 10000 TA=25°C 10.0 1000 10µs 100µs RDS(ON) limited Power (W) ID (Amps) 100.0 1ms 1.0 10ms 10 TJ(Max)=150°C TA=25°C 0.1 100 10s DC 1 0.0 0.01 0.1 1 VDS (Volts) 10 0.00001 100 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=75°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.14.0: July 2013 www.aosmd.com Page 4 of 5 AO4407 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev.14.0: July 2013 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 5 of 5 www.s-manuals.com
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