AO4466 Datasheet. Www.s Manuals.com. Ao

User Manual: Marking of electronic components, SMD Codes 44, 44-, 4407, 441NL, 4430, 4435GM, 4435GYT, 4459, 4459A, 4466, 4468, 449, 4496, 44T, 44W, 44p, 44s, 44t. Datasheets AO4407, AO4430L, AO4459L, AO4466L, AO4468L, AO4496L, AP4435GM, AP4435GM-HF, AP4435GYT-HF, BAS40-04, BAS40-04T, BAT54SW, FMMT449, SST441NL, Si4459ADY, TK71544AS.

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AO4466
30V N-Channel MOSFET

General Description

Product Summary

The AO4466 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM
applications. The source leads are separated to allow
a Kelvin connection to the source, which may be
used to bypass the source inductance.

VDS (V) = 30V
ID = 10A
RDS(ON) < 23mΩ
RDS(ON) < 35mΩ

(VGS = 10V)
(VGS = 10V)
(VGS = 4.5V)

100% UIS Tested
100% Rg Tested

* RoHS and Halogen-Free Compliant

SOIC-8
Top View
D
D

D

Bottom View

D
D

G

G
S

S

S
S

Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage

VGS
TA=25°C

Continuous Drain
Current AF
Pulsed Drain Current

Units
V

±20

V

10

TA=70°C

ID

B

64
3.1

PD

TA=70°C

A

7

IDM
TA=25°C

Power Dissipation

Maximum
30

W

2

Avalanche Current B, G

IAR

12

A

Repetitive avalanche energy 0.1mH B, G

EAR

7

mJ

Junction and Storage Temperature Range

TJ, TSTG

-55 to 150

°C

Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C

Rev.10.0: July 2013

Symbol
t ≤ 10s
Steady-State
Steady-State

RθJA
RθJL

www.aosmd.com

Typ
36
62
18

Max
40
75
24

Units
°C/W
°C/W
°C/W

Page 1 of 6

AO4466

Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter

Symbol

STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS

Zero Gate Voltage Drain Current

Conditions

Min

ID=250µA, VGS=0V

1
TJ=55°C

Gate-Body leakage current

VDS=0V, VGS= ±20V
VDS=VGS ID=250µA

1.5

On state drain current

VGS=4.5V, VDS=5V

64

VGS=10V, ID=10A

100

nA

2.1

2.6

V

16.7

23

24.3

30
35

A

RDS(ON)

Static Drain-Source On-Resistance
VGS=4.5V, ID=5A

23.7

gFS

Forward Transconductance

VDS=5V, ID=10A

17

VSD

Diode Forward Voltage

IS=1A,VGS=0V

IS

Maximum Body-Diode Continuous Current

TJ=125°C

DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss

Output Capacitance
Reverse Transfer Capacitance

Rg

Gate resistance

VGS=0V, VDS=0V, f=1MHz

SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs

Gate Source Charge

0.75

VGS=10V, VDS=15V, ID=10A

mΩ
mΩ
S

1

V

2.4

A

373

448

pF

46

67

88

pF

24

41

58

pF

0.6

1.8

2.8

Ω

5.7

7.1

8.6

nC

2.7

3.5

4.2

nC

298
VGS=0V, VDS=15V, f=1MHz

µA

5

Gate Threshold Voltage

Units
V

VDS=30 VGS=0V

VGS(th)

Crss

Max

30

IGSS
ID(ON)

Typ

1.2

nC

Qgd

Gate Drain Charge

1.6

nC

tD(on)

Turn-On DelayTime

4.3

ns

2.8

ns

15.8

ns

VGS=10V, VDS=15V, RL=1.5Ω,
RGEN=3Ω

tr

Turn-On Rise Time

tD(off)

Turn-Off DelayTime

tf
trr

Turn-Off Fall Time
IF=10A, dI/dt=100A/µs

8.4

10.5

12.6

Qrr

3.6

4.5

5.4

trr

Body Diode Reverse Recovery Charge IF=10A, dI/dt=100A/µs
IF=10A, dI/dt=500A/µs
Body Diode Reverse Recovery Time

4.7

6.0

7.2

Qrr

Body Diode Reverse Recovery Charge IF=10A, dI/dt=500A/µs

5.3

6.6

8

Body Diode Reverse Recovery Time

3

ns
ns
nC
ns
nC

A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with
T A=25°C. The value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
F. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.
G: L=100uH, VDD=0V, RG=0Ω, rated VDS=30V and VGS=10V
Rev 9: May. 2012

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev.10.0: July 2013

www.aosmd.com

Page 2 of 6

AO4466
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60

15
10V

6V

50

VDS=5V

12

9

4.5V
ID(A)

ID (A)

40
30

6
20

125°C

VGS=3.5V
3

10
0

25°C

0
0

1

2

3

4

5

1.5

VDS (Volts)
Fig 1: On-Region Characteristics

2.5

3

3.5

4

4.5

VGS(Volts)
Figure 2: Transfer Characteristics

40
Normalized On-Resistance

1.8

35
RDS(ON) (mΩ
Ω)

2

VGS=4.5V

30
25
20
VGS=10V
15
10

VGS=10V
1.6
VGS=4.5V

1.4
1.2
1
0.8

0

5

10

15

20

0

ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage

25

50

75

100

125

150

175

Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature

60

1.0E+01
ID=10A
1.0E+00
1.0E-01

40
IS (A)

RDS(ON) (mΩ
Ω)

50

125°C
1.0E-02

125°C
30
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES
AS CRITICAL
25°C
1.0E-03
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED.
AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF20
SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
1.0E-04
FUNCTIONS AND RELIABILITY WITHOUT
NOTICE.
25°C
10
1.0E-05
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
VGS (Volts)
VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Figure 6: Body-Diode Characteristics

Rev.10.0: July 2013

www.aosmd.com

Page 3 of 6

AO4466
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
600

10
VDS=15V
ID=10A

500
Ciss

Capacitance (pF)

VGS (Volts)

8
6
4

400
300
200
Coss

2

100

0
0

2

4
6
Qg (nC)
Figure 7: Gate-Charge Characteristics

8

100.0

0

5

10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics

30

100.0

In descending order
TA=25°C, 100°C, 125°C,

RDS(ON)
limited

10µs

10.0
ID (Amps)

IA, Peak Avalanche Current (A)

Crss

0

10.0

100µs

DC

0.1

TJ(Max)=150°C
TA=25°C

0.0

1.0
1

10

100

1ms
10ms
100ms
1s
10s

1.0

1000

Time in Avalache, tA (ms)
Figure 9: Single Pulse Avalanche Capability

0.1

1

10

100

VDS (Volts)

Figure 10: Maximum Forward Biased Safe
Operating Area (Note E)

50

Power (W)

40

TJ(Max)=150°C
TA=25°C

30

20

10

0
0.0001

0.01

1

100

Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note E)

Rev.10.0: July 2013

www.aosmd.com

Page 4 of 6

AO4466
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

Zθ JA Normalized Transient
Thermal Resistance

10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=75°C/W

In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

1

0.1
PD
Single Pulse

Ton
T

0.01
1E-05

0.0001

0.001

0.01

0.1

1

10

100

1000

Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance

Rev.10.0: July 2013

www.aosmd.com

Page 5 of 6

AO4466

Gate Charge Test Circuit & Waveform
Vgs
Qg
10V

+
+

VDC

-

VDC

Qgs

Vds

Qgd

-

DUT
Vgs
Ig

Charge

Res istive Switching Test Circuit & Waveforms
RL
Vds
Vds

DUT

Vgs

+
VDC

90%
Vdd

-

Rg

10%

Vgs

Vgs

t d(on)

tr

t d(off)

t on

tf
t off

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LI

Vds

2
AR

BVDSS

Vds

Id

+

Vgs

Vgs

VDC

-

Rg

I AR

Vdd
Id

DUT
Vgs

Vgs

Diode Recovery Tes t Circuit & Waveforms
Q rr = - Idt

Vds +
DUT
Vgs
Vds -

Isd
Vgs

Ig

Rev.10.0: July 2013

L

Isd

+
VDC

-

IF

trr

dI/dt
IRM

Vdd

Vdd
Vds

www.aosmd.com

Page 6 of 6

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