AO4466 Datasheet. Www.s Manuals.com. Ao

User Manual: Marking of electronic components, SMD Codes 44, 44-, 4407, 441NL, 4430, 4435GM, 4435GYT, 4459, 4459A, 4466, 4468, 449, 4496, 44T, 44W, 44p, 44s, 44t. Datasheets AO4407, AO4430L, AO4459L, AO4466L, AO4468L, AO4496L, AP4435GM, AP4435GM-HF, AP4435GYT-HF, BAS40-04, BAS40-04T, BAT54SW, FMMT449, SST441NL, Si4459ADY, TK71544AS.

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Product Summary

VDS (V) = 30V

ID= 10A (VGS = 10V)

RDS(ON) < 23mΩ (VGS = 10V)

RDS(ON) < 35mΩ (VGS = 4.5V)

100% UIS Tested

100% Rg Tested

AO4466

30V N-Channel MOSFET

General Description

The AO4466 uses advanced trench technology to

provide excellent RDS(ON) and low gate charge. This

device is suitable for use as a load switch or in PWM

applications. The source leads are separated to allow

a Kelvin connection to the source, which may be

used to bypass the source inductance.

* RoHS and Halogen-Free Compliant

SOIC-8

Top View Bottom View

D

D

DD

S

SGG

D

S

Symbol

V

DS

V

GS

I

DM

I

AR

E

AR

T

J

, T

STG

Symbol

Typ

Max

36 40

62 75

R

θJL

18 24

Repetitive avalanche energy 0.1mH

B, G

Junction and Storage Temperature Range

P

D

T

A

=70°C

Pulsed Drain Current

B

Avalanche Current

B, G

°C

3.1

7mJ

2

-55 to 150

12 A

Continuous Drain

Current

AF

Maximum UnitsParameter

Gate-Source Voltage

Drain-Source Voltage

10

7

30

T

A

=25°C

T

A

=70°C

±20

Absolute Maximum Ratings T

A

=25°C unless otherwise noted

V

V

Maximum Junction-to-Lead

C

Steady-State °C/W

Thermal Characteristics

Parameter Units

Maximum Junction-to-Ambient

A

Steady-State

t ≤ 10s R

θJA

°C/W

°C/W

Maximum Junction-to-Ambient

A

I

D

Power Dissipation

T

A

=25°C W

A

64

S

S

Rev.10.0: July 2013 www.aosmd.com Page 1 of 6

AO4466

Symbol Min Typ Max Units

BV

DSS

30 V

1

T

J

=55°C 5

I

GSS

100 nA

V

GS(th)

1.5 2.1 2.6 V

I

D(ON)

64 A

16.7 23

T

J

=125°C 24.3 30

23.7 35 mΩ

g

FS

17 S

V

SD

0.75 1 V

I

S

2.4 A

C

iss

298 373 448 pF

C

oss

46 67 88 pF

C

rss

24 41 58 pF

R

g

0.6 1.8 2.8 Ω

Q

g

(10V) 5.7 7.1 8.6 nC

Q

g

(4.5V) 2.7 3.5 4.2 nC

Q

gs

1.2 nC

Q

gd

1.6 nC

t

D(on)

4.3

ns

Gate Source Charge V

GS

=10V, V

DS

=15V, I

D

=10A

Total Gate Charge

Gate Drain Charge

Total Gate Charge

Turn-On DelayTime

DYNAMIC PARAMETERS

V

GS

=0V, V

DS

=15V, f=1MHz

SWITCHING PARAMETERS

Gate resistance V

GS

=0V, V

DS

=0V, f=1MHz

R

DS(ON)

Static Drain-Source On-Resistance

Forward Transconductance

Diode Forward Voltage

mΩ

V

GS

=4.5V, I

D

=5A

I

S

=1A,V

GS

=0V

V

DS

=5V, I

D

=10A

V

GS

=10V, I

D

=10A

Electrical Characteristics (T

J

=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter Conditions

I

DSS

µA

V

DS

=30 V

GS

=0V

Zero Gate Voltage Drain Current

On state drain current

I

D

=250µA, V

GS

=0V

V

GS

=4.5V, V

DS

=5V

Gate Threshold Voltage V

DS

=V

GS

I

D

=250µA

V

DS

=0V, V

GS

= ±20V

Gate-Body leakage current

Drain-Source Breakdown Voltage

Reverse Transfer Capacitance

Maximum Body-Diode Continuous Current

Input Capacitance

Output Capacitance

Rev.10.0: July 2013 www.aosmd.com Page 2 of 6

t

D(on)

4.3

ns

t

r

2.8 ns

t

D(off)

15.8 ns

t

f

3 ns

t

rr

8.4 10.5 12.6 ns

Q

rr

3.6 4.5 5.4 nC

t

rr

4.7 6.0 7.2 ns

Q

rr

5.3 6.6 8 nC

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Turn-Off DelayTime

V

GS

=10V, V

DS

=15V, R

L

=1.5Ω,

R

GEN

=3Ω

Turn-Off Fall Time

Turn-On DelayTime

Body Diode Reverse Recovery Charge I

F

=10A, dI/dt=500A/µs

I

F

=10A, dI/dt=500A/µs

Turn-On Rise Time

Body Diode Reverse Recovery Time I

F

=10A, dI/dt=100A/µs

Body Diode Reverse Recovery Charge I

F

=10A, dI/dt=100A/µs

Body Diode Reverse Recovery Time

A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with

T A=25°C. The value in any given application depends on the user's specific board design.

B: Repetitive rating, pulse width limited by junction temperature.

C. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.

D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA

curve provides a single pulse rating.

F. The current rating is based on the t≤10s junction to ambient thermal resistance rating.

G: L=100uH, VDD=0V, RG=0Ω, rated VDS=30V and VGS=10V

Rev 9: May. 2012

Rev.10.0: July 2013 www.aosmd.com Page 2 of 6

AO4466

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

0

10

20

30

40

50

60

012345

ID(A)

VDS (Volts)

Fig 1: On-Region Characteristics

V

GS

=3.5V

4.5V

6V

10V

0

3

6

9

12

15

1.5 2 2.5 3 3.5 4 4.5

ID(A)

VGS(Volts)

Figure 2: Transfer Characteristics

10

15

20

25

30

35

40

0

5

10

15

20

RDS(ON) (mΩ

Ω

Ω

Ω)

0.8

1

1.2

1.4

1.6

1.8

0

25

50

75

100

125

150

175

Normalized On-Resistance

V

GS

=10V

VGS=4.5V

25°C

125°C

V

DS

=5V

V

GS

=4.5V

V

GS

=10V

Rev.10.0: July 2013 www.aosmd.com Page 3 of 6

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

10

0 5 10 15 20

ID(A)

Figure 3: On-Resistance vs. Drain Current and

Gate Voltage

1.0E-05

1.0E-04

1.0E-03

1.0E-02

1.0E-01

1.0E+00

1.0E+01

0.0 0.2 0.4 0.6 0.8 1.0

IS(A)

VSD (Volts)

Figure 6: Body-Diode Characteristics

25°C

125°C

0.8

0 25 50 75 100 125 150 175

Temperature (°C)

Figure 4: On-Resistance vs. Junction Temperature

10

20

30

40

50

60

2 4 6 8 10

RDS(ON) (mΩ

Ω

Ω

Ω)

VGS (Volts)

Figure 5: On-Resistance vs. Gate-Source Voltage

ID=10A

25

°

C

125°C

Rev.10.0: July 2013 www.aosmd.com Page 3 of 6

AO4466

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

0

2

4

6

8

10

02468

VGS (Volts)

Qg(nC)

Figure 7: Gate-Charge Characteristics

0

100

200

300

400

500

600

0 5 10 15 20 25 30

Capacitance (pF)

VDS (Volts)

Figure 8: Capacitance Characteristics

Ciss

Coss

C

rss

0.0

0.1

1.0

10.0

100.0

0.1 1 10 100

ID(Amps)

V

(Volts)

100

µ

s

10ms

1ms

100ms

1s

10s

DC

RDS(ON)

limited

TJ(Max)=150°C

TA=25°C

VDS=15V

ID=10A

10

µ

s

1.0

10.0

100.0

1

10

100

1000

IA, Peak Avalanche Current (A)

In descending order

TA=25°C, 100°C, 125°C,

Rev.10.0: July 2013 www.aosmd.com Page 4 of 6

0.0

0.1 1 10 100

VDS (Volts)

Figure 10: Maximum Forward Biased Safe

Operating Area (Note E)

T

A

=25

°

C

0

10

20

30

40

50

0.0001 0.01 1 100

Power (W)

Pulse Width (s)

Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note E)

TJ(Max)=150°C

TA=25°C

1.0

1 10 100 1000

IA

, Peak Avalanche Current (A)

Time in Avalache, tA(ms)

Figure 9: Single Pulse Avalanche Capability

Rev.10.0: July 2013 www.aosmd.com Page 4 of 6

AO4466

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

0.01

0.1

1

10

1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000

Zθ

θ

θ

θJA Normalized Transient

Thermal Resistance

Pulse Width (s)

Figure 12: Normalized Maximum Transient Thermal Impedance

Single Pulse

D=Ton/T

TJ,PK=TA+PDM.ZθJA.RθJA

RθJA=75°C/W

Ton T

P

D

In descending order

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Rev.10.0: July 2013 www.aosmd.com Page 5 of 6 Rev.10.0: July 2013 www.aosmd.com Page 5 of 6

AO4466

-

+

VDC

Ig

Vds

DUT

-

+

VDC

Vgs

Vgs

10V

Qg

Qgs Qgd

Charge

Gate Charge Test Circuit & Waveform

-

+

VDC

DUT Vdd

Vgs

Vds

Vgs

RL

Rg

Vgs

Vds

10%

90%

Resistive Switching Test Circuit & Waveforms

t t

r

d(on)

t

on

t

d(off)

t

f

t

off

L

BV

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

Vds

DSS

2

E = 1/2 LI

AR

AR

Rev.10.0: July 2013 www.aosmd.com Page 6 of 6

Vdd

Vgs

Id

Vgs

Rg

DUT

-

+

VDC

L

Vgs

Vds

Id

Vgs

BV

I

Ig

Vgs

-

+

VDC

DUT

L

Vds

Vgs

Vds

Isd

Isd

Diode Recovery Test Circuit & Waveforms

Vds -

Vds +

I

F

AR

DSS

2

E = 1/2 LI

dI/dt

I

RM

rr

Vdd

Vdd

Q = - Idt

t

rr

AR

AR

Rev.10.0: July 2013 www.aosmd.com Page 6 of 6

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