AON6912A Datasheet. Www.s Manuals.com. R1 Ao
User Manual: Marking of electronic components, SMD Codes 690A, 690B, 690C, 690D, 6912A, 6970. Datasheets AON6912ALS, AON6970, SFH690AT, SFH690BT, SFH690CT, SFH690DT.
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AON6912A
30V Dual Asymmetric N-Channel MOSFET
General Description Product Summary
Q1
Q2
30V 30V
I
D
(at V
GS
=10V) 34A 52A
R
DS(ON)
(at V
GS
=10V) <13.7mΩ<7.3mΩ
R
DS(ON)
(at V
GS
= 4.5V) <19.3mΩ <10.4mΩ
100% UIS Tested
100% Rg Tested
Symbol
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Units
The AON6912A is designed to provide a high efficiency
synchronous buck power stage with optimal layout and
board space utilization. It includes two specialized
MOSFETs in a dual Power DFN5x6 package. The Q1
"High Side" MOSFET is designed to minimize switching
losses. The Q2 "Low Side" MOSFET is designed for low
R
DS(ON)
to reduce conduction losses. The AON6912A is
well suited for use in compact DC/DC converter
applications.
V
DS
Max Q1
Max Q2
Top View
PIN1
DFN5X6
Top View Bottom View
Bottom View
Symbol
V
DS
V
GS
I
DM
I
AS
, I
AR
E
AS
, E
AR
T
J
, T
STG
Parameter Symbol Typ Q1 Typ Q2 Max Q1 Max Q2
t
≤
10s
29 24 35 29
Steady-State
56 50 67 60
Steady-State
R
θJC
4.5 3.5 5.5 4.2
Maximum Junction-to-Case °C/W
°C/W
Maximum Junction-to-Ambient
A D
R
θJA
Maximum Junction-to-Ambient
A
°C/W
13.8
34
T
C
=25°C
T
C
=100°C
Avalanche Energy L=0.1mH
C
130
12
10
Power Dissipation
B
P
D
T
A
=70°C
T
A
=25°C
Pulsed Drain Current
C
T
A
=25°C I
DSM
T
A
=70°C
Power Dissipation
A
P
DSM
mJ
Avalanche Current
C
Continuous Drain
Current
A
8 10.8
Parameter
Gate-Source Voltage
Drain-Source Voltage 30
I
D
T
C
=25°C
T
C
=100°C
Continuous Drain
Current
30
9
W
Units
Units
28
24 80
A
W
V
V
-55 to 150
A
22
85
Thermal Characteristics
1.9 2.1
1.2 1.3
22
52
21
Junction and Storage Temperature Range °C
Max Q1
Max Q2
±20
33
Top View
PIN1
DFN5X6
Top View Bottom View
Bottom View
Rev1: Mar. 2011
www.aosmd.com Page 1 of 10
AON6912A
Symbol Min Typ Max Units
BV
DSS
30 V
V
DS
=30V, V
GS
=0V 1
T
J
=55°C 5
I
GSS
100 nA
V
GS(th)
Gate Threshold Voltage 1.5 1.9 2.5 V
I
D(ON)
85 A
9.8 13.7
T
J
=125°C 14.5 21.5
12.9 19.3 mΩ
g
FS
45 S
V
SD
0.75 1 V
I
S
25 A
C
iss
610 760 910 pF
C
oss
88 125 160 pF
C
rss
40 70 100 pF
R
g
0.8 1.6 2.4 Ω
Q
g
(10V) 11 14 17.0 nC
Q
g
(4.5V) 5 6.6 8.0 nC
Q
gs
2.4 nC
Q
gd
3 nC
t
D(on)
4.4 ns
t
9
ns
I
DSS
V
GS
=10V, I
D
=10A
Reverse Transfer Capacitance
V
GS
=0V, V
DS
=15V, f=1MHz
SWITCHING PARAMETERS
Forward Transconductance
I
S
=1A,V
GS
=0V
R
DS(ON)
Q1 Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
Static Drain-Source On-Resistance mΩ
µA
Zero Gate Voltage Drain Current
Drain-Source Breakdown Voltage
On state drain current
I
D
=250µA, V
GS
=0V
V
GS
=10V, V
DS
=5V
V
DS
=V
GS
I
D
=250µA
V
DS
=0V, V
GS
= ±20V
Gate-Body leakage current
V
DS
=5V, I
D
=10A
V
GS
=4.5V, I
D
=10A
Diode Forward Voltage
Gate resistance V
GS
=0V, V
DS
=0V, f=1MHz
V
=10V, V
=15V, R
=1.5
Ω
,
Total Gate Charge
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
Turn-On Rise Time
Total Gate Charge
V
GS
=10V, V
DS
=15V, I
D
=10A
Gate Source Charge
Gate Drain Charge
t
r
9
ns
t
D(off)
17 ns
t
f
6 ns
t
rr
5.6 7 8.4 ns
Q
rr
6.4 8 9.6 nC
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time I
F
=10A, dI/dt=500A/µs
V
GS
=10V, V
DS
=15V, R
L
=1.5
Ω
,
R
GEN
=3Ω
Body Diode Reverse Recovery Charge I
F
=10A, dI/dt=500A/µs
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
A. The value of RθJA is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
Power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design.
B. The power dissipation PDis based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by package.
H. These tests are performed with the device mounted on 1 in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
Rev1: Mar. 2011 www.aosmd.com Page 2 of 10
AON6912A
Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
0
5
10
15
20
25
30
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
ID(A)
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
6
8
10
12
14
16
18
0 5 10 15 20 25 30
RDS(ON) (mΩ
Ω
Ω
Ω)
ID(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0.8
1
1.2
1.4
1.6
1.8
0 25 50 75 100 125 150 175
Normalized On-Resistance
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
VGS=4.5V
ID=10A
VGS=10V
ID=10A
25°C
125°C
V
DS
=5V
VGS=4.5V
VGS=10V
0
10
20
30
40
50
60
012345
ID(A)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
V
GS
=3V
4.5V
10V 4V
3.5V
6V
40
0
5
10
15
20
25
30
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
ID(A)
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
6
8
10
12
14
16
18
0 5 10 15 20 25 30
RDS(ON) (mΩ
Ω
Ω
Ω)
ID(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0.8
1
1.2
1.4
1.6
1.8
0 25 50 75 100 125 150 175
Normalized On-Resistance
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
VGS=4.5V
ID=10A
VGS=10V
ID=10A
5
10
15
20
25
30
2 4 6 8 10
RDS(ON) (mΩ
Ω
Ω
Ω)
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
25°C
125°C
V
DS
=5V
VGS=4.5V
VGS=10V
ID=10A
25
°
C
125°C
0
10
20
30
40
50
60
012345
ID(A)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
V
GS
=3V
4.5V
10V 4V
3.5V
6V
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
0.0 0.2 0.4 0.6 0.8 1.0 1.2
IS(A)
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
25°C
125°C
Rev1: Mar. 2011 www.aosmd.com Page 3 of 10
AON6912A
Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0.0
0.1
1.0
10.0
100.0
1000.0
0.01 0.1 1 10 100
ID(Amps)
VDS (Volts)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
1ms
100us
DC
RDS(ON)
limited
TJ(Max)=150°C
T
C
=25°C
10
µ
s
0
2
4
6
8
10
0246810
VGS (Volts)
Qg(nC)
Figure 7: Gate-Charge Characteristics
0
200
400
600
800
1000
1200
0 5 10 15 20 25 30
Capacitance (pF)
VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
0
40
80
120
160
200
0.0001 0.001 0.01 0.1 1 10
Power (W)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Coss
Crss
VDS=15V
I
D
=10A
TJ(Max)=150°C
TC=25°C
0.0
0.1
1.0
10.0
100.0
1000.0
0.01 0.1 1 10 100
ID(Amps)
VDS (Volts)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
1ms
100us
DC
RDS(ON)
limited
TJ(Max)=150°C
T
C
=25°C
10
µ
s
0
2
4
6
8
10
0246810
VGS (Volts)
Qg(nC)
Figure 7: Gate-Charge Characteristics
0
200
400
600
800
1000
1200
0 5 10 15 20 25 30
Capacitance (pF)
VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
0
40
80
120
160
200
0.0001 0.001 0.01 0.1 1 10
Power (W)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10
Zθ
θ
θ
θJC Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Coss
Crss
VDS=15V
I
D
=10A
Single Pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ(Max)=150°C
TC=25°C
RθJC=5.5°C/W
Rev1: Mar. 2011 www.aosmd.com Page 4 of 10
AON6912A
Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
10
100
0.000001 0.00001 0.0001 0.001
IAR (A) Peak Avalanche Current
Time in avalanche, tA(s)
Figure 12: Single Pulse Avalanche capability (Note
C)
0
5
10
15
20
25
0 25 50 75 100 125 150
Power Dissipation (W)
TCASE (°
°°
°C)
Figure 13: Power De-rating (Note F)
0
5
10
15
20
25
30
35
40
0 25 50 75 100 125 150
Current rating ID(A)
TCASE (°
°°
°C)
Figure 14: Current De-rating (Note F)
TA=25°C
1
10
100
1000
10000
0.00001 0.001 0.1 10 1000
Power (W)
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
TA=25°C
TA=150°C
T
A
=100°C
T
A
=125°C
40
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Zθ
θ
θ
θJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
10
100
0.000001 0.00001 0.0001 0.001
IAR (A) Peak Avalanche Current
Time in avalanche, tA(s)
Figure 12: Single Pulse Avalanche capability (Note
C)
0
5
10
15
20
25
0 25 50 75 100 125 150
Power Dissipation (W)
TCASE (°
°°
°C)
Figure 13: Power De-rating (Note F)
0
5
10
15
20
25
30
35
40
0 25 50 75 100 125 150
Current rating ID(A)
TCASE (°
°°
°C)
Figure 14: Current De-rating (Note F)
TA=25°C
1
10
100
1000
10000
0.00001 0.001 0.1 10 1000
Power (W)
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
TA=25°C
TA=150°C
T
A
=100°C
T
A
=125°C
RθJA=67°C/W
Rev1: Mar. 2011 www.aosmd.com Page 5 of 10
AON6912A
Symbol Min Typ Max Units
BV
DSS
30 V
V
DS
=30V, V
GS
=0V 1
T
J
=55°C 5
I
GSS
100 nA
V
GS(th)
Gate Threshold Voltage 1.3 1.9 2.5 V
I
D(ON)
130 A
6.1 7.3
T
J
=125°C 8.5 10.2
8.3 10.4 mΩ
g
FS
60 S
V
SD
0.7 1 V
I
S
35 A
C
iss
870 1090 1300 pF
C
oss
340 490 640 pF
C
rss
22 38 53 pF
R
g
0.4 0.9 1.4 Ω
Q
g
(10V) 12 16 20 nC
Q
g
(4.5V) 5 7 9 nC
Q
gs
2 2.5 3 nC
Q
gd
1.5 2.5 3.5 nC
t
D(on)
5 ns
t
2
ns
V
DS
=0V, V
GS
= ±20V
Gate-Body leakage current
I
DSS
Q2 Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
Static Drain-Source On-Resistance mΩ
µA
Zero Gate Voltage Drain Current
V
GS
=10V, I
D
=20A
R
DS(ON)
Drain-Source Breakdown Voltage
On state drain current
I
D
=250µA, V
GS
=0V
V
GS
=10V, V
DS
=5V
V
DS
=V
GS
I
D
=250µA
V
DS
=5V, I
D
=20A
V
GS
=4.5V, I
D
=20A
Diode Forward Voltage
V
=10V, V
=15V, R
=0.75
Ω
,
Gate resistance V
GS
=0V, V
DS
=0V, f=1MHz
Total Gate Charge
V
GS
=10V, V
DS
=15V, I
D
=20A
Gate Source Charge
Reverse Transfer Capacitance
V
GS
=0V, V
DS
=15V, f=1MHz
SWITCHING PARAMETERS
Forward Transconductance
I
S
=1A,V
GS
=0V
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
Turn-On Rise Time
Gate Drain Charge
Total Gate Charge
t
r
2
ns
t
D(off)
16 ns
t
f
2 ns
t
rr
10 13 16 ns
Q
rr
20 25 30 nC
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
V
GS
=10V, V
DS
=15V, R
L
=0.75
Ω
,
R
GEN
=3Ω
Turn-Off Fall Time
I
F
=20A, dI/dt=500A/µs
Body Diode Reverse Recovery Time I
F
=20A, dI/dt=500A/µs
Turn-On Rise Time
Turn-Off DelayTime
Body Diode Reverse Recovery Charge
A. The value of RθJA is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design.
B. The power dissipation PDis based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. These tests are performed with the device mounted on 1 in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
Rev1: Mar. 2011 www.aosmd.com Page 6 of 10
AON6912A
Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
0
10
20
30
40
50
1 1.5 2 2.5 3 3.5 4
ID(A)
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
0
3
6
9
12
15
0 5 10 15 20 25 30
RDS(ON) (mΩ
Ω
Ω
Ω)
ID(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0.8
1
1.2
1.4
1.6
0 25 50 75 100 125 150 175
Normalized On-Resistance
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
VGS=4.5V
ID=20A
VGS=10V
ID=20A
25°C
125°C
V
DS
=5V
VGS=4.5V
VGS=10V
0
20
40
60
80
100
012345
ID(A)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
V
GS
=3V
3.5V
4.5V
10V 4V
40
0
10
20
30
40
50
1 1.5 2 2.5 3 3.5 4
ID(A)
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
0
3
6
9
12
15
0 5 10 15 20 25 30
RDS(ON) (mΩ
Ω
Ω
Ω)
ID(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
0.0 0.2 0.4 0.6 0.8 1.0 1.2
IS(A)
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
25°C
125°C
0.8
1
1.2
1.4
1.6
0 25 50 75 100 125 150 175
Normalized On-Resistance
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
VGS=4.5V
ID=20A
VGS=10V
ID=20A
0
5
10
15
20
25
30
2 4 6 8 10
RDS(ON) (mΩ
Ω
Ω
Ω)
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
25°C
125°C
V
DS
=5V
VGS=4.5V
VGS=10V
ID=20A
25
°
C
125°C
0
20
40
60
80
100
012345
ID(A)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
V
GS
=3V
3.5V
4.5V
10V 4V
Rev1: Mar. 2011 www.aosmd.com Page 7 of 10
AON6912A
Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0.0
0.1
1.0
10.0
100.0
1000.0
0.01 0.1 1 10 100
ID(Amps)
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
µ
s
1ms
DC
RDS(ON)
limited
TJ(Max)=150°C
100
µ
s
0
40
80
120
160
200
0.0001 0.001 0.01 0.1 1 10
Power (W)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
0
2
4
6
8
10
0 3 6 9 12 15 18
VGS (Volts)
Qg(nC)
Figure 7: Gate-Charge Characteristics
0
200
400
600
800
1000
1200
1400
1600
1800
0 5 10 15 20 25 30
Capacitance (pF)
VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
Coss
C
rss
VDS=15V
ID=20A
TJ(Max)=150°C
TC=25°C
10ms
40
0.0
0.1
1.0
10.0
100.0
1000.0
0.01 0.1 1 10 100
ID(Amps)
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
µ
s
1ms
DC
RDS(ON)
limited
TJ(Max)=150°C
100
µ
s
0
40
80
120
160
200
0.0001 0.001 0.01 0.1 1 10
Power (W)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
0
2
4
6
8
10
0 3 6 9 12 15 18
VGS (Volts)
Qg(nC)
Figure 7: Gate-Charge Characteristics
0
200
400
600
800
1000
1200
1400
1600
1800
0 5 10 15 20 25 30
Capacitance (pF)
VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10
Zθ
θ
θ
θJC Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Coss
C
rss
VDS=15V
ID=20A
Single Pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ(Max)=150°C
TC=25°C
RθJC=4.2°C/W
10ms
Rev1: Mar. 2011 www.aosmd.com Page 8 of 10
AON6912A
Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
10
100
0.000001 0.00001 0.0001 0.001
IAR (A) Peak Avalanche Current
Time in avalanche, tA(s)
Figure 12: Single Pulse Avalanche capability (Note
C)
0
5
10
15
20
25
30
35
0 25 50 75 100 125 150
Power Dissipation (W)
TCASE (°
°°
°C)
Figure 13: Power De-rating (Note F)
0
10
20
30
40
50
60
0 25 50 75 100 125 150
Current rating ID(A)
TCASE (°
°°
°C)
Figure 14: Current De-rating (Note F)
TA=25°C
1
10
100
1000
10000
0.00001 0.001 0.1 10 1000
Power (W)
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note G)
TA=25°C
TA=150°C
TA=100°C
TA=125°C
40
0.001
0.01
0.1
1
10
0.0001 0.001 0.01 0.1 1 10 100 1000
Zθ
θ
θ
θJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note G)
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
10
100
0.000001 0.00001 0.0001 0.001
IAR (A) Peak Avalanche Current
Time in avalanche, tA(s)
Figure 12: Single Pulse Avalanche capability (Note
C)
0
5
10
15
20
25
30
35
0 25 50 75 100 125 150
Power Dissipation (W)
TCASE (°
°°
°C)
Figure 13: Power De-rating (Note F)
0
10
20
30
40
50
60
0 25 50 75 100 125 150
Current rating ID(A)
TCASE (°
°°
°C)
Figure 14: Current De-rating (Note F)
TA=25°C
1
10
100
1000
10000
0.00001 0.001 0.1 10 1000
Power (W)
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note G)
TA=25°C
TA=150°C
TA=100°C
TA=125°C
RθJA=60°C/W
Rev1: Mar. 2011 www.aosmd.com Page 9 of 10
AON6912A
-
+
VDC
Ig
Vds
DUT
-
+
VDC
Vgs
Vgs
10V
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Resistive Switching Test Circuit & Waveforms
t t
r
d(on)
t
on
t
d(off)
t
f
t
off
Id
+
L
Vgs
Vds
BV
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Vds
DSS
2
E = 1/2 LI
AR
AR
-
+
VDC
Ig
Vds
DUT
-
+
VDC
Vgs
Vgs
10V
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Resistive Switching Test Circuit & Waveforms
t t
r
d(on)
t
on
t
d(off)
t
f
t
off
Vdd
Vgs
Id
Vgs
Rg
DUT
-
+
VDC
L
Vgs
Vds
Id
Vgs
BV
I
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Ig
Vgs
-
+
VDC
DUT
L
Vds
Vgs
Vds
Isd
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
I
F
AR
DSS
2
E = 1/2 LI
dI/dt
I
RM
rr
Vdd
Vdd
Q = - Idt
AR
AR
t
rr
Rev1: Mar. 2011 www.aosmd.com Page 10 of 10
