AON6912A Datasheet. Www.s Manuals.com. R1 Ao

User Manual: Marking of electronic components, SMD Codes 690A, 690B, 690C, 690D, 6912A, 6970. Datasheets AON6912ALS, AON6970, SFH690AT, SFH690BT, SFH690CT, SFH690DT.

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AON6912A
30V Dual Asymmetric N-Channel MOSFET

General Description

Product Summary

The AON6912A is designed to provide a high efficiency
synchronous buck power stage with optimal layout and
board space utilization. It includes two specialized
MOSFETs in a dual Power DFN5x6 package. The Q1
"High Side" MOSFET is designed to minimize switching
losses. The Q2 "Low Side" MOSFET is designed for low
RDS(ON) to reduce conduction losses. The AON6912A is
well suited for use in compact DC/DC converter
applications.

VDS

Q1
30V

Q2
30V

ID (at VGS=10V)

34A

52A

RDS(ON) (at VGS=10V)

<13.7mΩ

<7.3mΩ

RDS(ON) (at VGS = 4.5V)

<19.3mΩ

<10.4mΩ

100% UIS Tested
100% Rg Tested

DFN5X6
Top View

Bottom View

PIN1

Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage

Pulsed Drain Current C

C

Avalanche Energy L=0.1mH C
TC=25°C
Power Dissipation

B

TA=25°C
Power Dissipation A

Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
AD
Maximum Junction-to-Ambient
Maximum Junction-to-Case

Rev1: Mar. 2011

Steady-State
Steady-State

33
130

A

13.8

IAS, IAR

22

28

A

EAS, EAR

24

80

mJ

22

30

9

12

1.9

2.1

1.2

1.3

TJ, TSTG

Symbol
t ≤ 10s

21
85

10.8

PDSM

TA=70°C

V
52

8

PD

TC=100°C

Units
V

10

IDSM

TA=70°C

Avalanche Current

±20
34

IDM
TA=25°C

Max Q2
30

ID

TC=100°C

Continuous Drain
Current

Max Q1

VGS
TC=25°C

Continuous Drain
Current

Bottom View

Top View

RθJA
RθJC

-55 to 150

Typ Q1
29
56
4.5

www.aosmd.com

Typ Q2
24
50
3.5

Max Q1 Max Q2
35
29
67
60
5.5
4.2

A

W
W
°C

Units
°C/W
°C/W
°C/W

Page 1 of 10

AON6912A

Q1 Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol

Parameter

STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
IDSS

Zero Gate Voltage Drain Current

Conditions

Min

ID=250µA, VGS=0V

5

IGSS

Gate-Body leakage current

VDS=0V, VGS= ±20V

Gate Threshold Voltage

VDS=VGS ID=250µA

1.5

ID(ON)

On state drain current

VGS=10V, VDS=5V

85

VGS=10V, ID=10A
TJ=125°C
VGS=4.5V, ID=10A
gFS

Forward Transconductance

VDS=5V, ID=10A

VSD

Diode Forward Voltage

IS=1A,VGS=0V

IS

Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS
Input Capacitance
Ciss
Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Rg

Gate resistance

Units
V

1
TJ=55°C

Static Drain-Source On-Resistance

Max

30

VDS=30V, VGS=0V

VGS(th)

RDS(ON)

Typ

µA

100

nA

1.9

2.5

V

9.8

13.7

14.5

21.5

12.9

19.3

mΩ

1

V

25

A

A

45
0.75

mΩ

S

610

760

910

pF

VGS=0V, VDS=15V, f=1MHz

88

125

160

pF

40

70

100

pF

VGS=0V, VDS=0V, f=1MHz

0.8

1.6

2.4

Ω

SWITCHING PARAMETERS
Qg(10V) Total Gate Charge

11

14

17.0

nC

Qg(4.5V) Total Gate Charge

5

6.6

8.0

nC

Qgs

Gate Source Charge

Qgd

Gate Drain Charge

VGS=10V, VDS=15V, ID=10A

2.4

nC

3

nC

tD(on)

Turn-On DelayTime

tr

Turn-On Rise Time

tD(off)

Turn-Off DelayTime

tf

Turn-Off Fall Time

trr

Body Diode Reverse Recovery Time

IF=10A, dI/dt=500A/µs

5.6

7

8.4

Qrr

Body Diode Reverse Recovery Charge IF=10A, dI/dt=500A/µs

6.4

8

9.6

VGS=10V, VDS=15V, RL=1.5Ω,
RGEN=3Ω

4.4

ns

9

ns

17

ns

6

ns
ns
nC

A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by package.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev1: Mar. 2011

www.aosmd.com

Page 2 of 10

AON6912A

Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60

30
10V

4V

4.5V

VDS=5V

6V

50

25

40

20
ID(A)

ID (A)

3.5V
30

15
10

20
VGS=3V

10

125°C

5

25°C

0

0
0

1

2

3

4

0

5

18

1

1.5

2

2.5

3

3.5

4

4.5

5

Normalized On-Resistance

1.8

16
RDS(ON) (mΩ
Ω)

0.5

VGS(Volts)
Figure 2: Transfer Characteristics (Note E)

VDS (Volts)
Fig 1: On-Region Characteristics (Note E)

14

VGS=4.5V

12
10
VGS=10V
8
6

VGS=10V
ID=10A

1.6
1.4

17
5
VGS=4.5V
2
ID=10A
10

1.2
1
0.8

0

5

10

15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)

0

25

50

75

100

125

150

175

0
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)

30

1.0E+02
1.0E+01

ID=10A

25

40

IS (A)

RDS(ON) (mΩ
Ω)

1.0E+00
20
125°C

1.0E-01
1.0E-02

15

125°C

1.0E-03
10

25°C

1.0E-04

25°C

1.0E-05

5
2

6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)

Rev1: Mar. 2011

4

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0.0

0.2

0.4

0.6

0.8

1.0

1.2

VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)

Page 3 of 10

AON6912A

Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10

1200
VDS=15V
ID=10A

1000
Capacitance (pF)

VGS (Volts)

8

6

4

2

600
400
Coss

200

0

Crss

0
0

2

4
6
8
Qg (nC)
Figure 7: Gate-Charge Characteristics

10

0

10

15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics

160

100.0

30

RDS(ON)
limited

100us
1.0

1ms

DC
TJ(Max)=150°C
TC=25°C

0.1

TJ(Max)=150°C
TC=25°C

10µs
Power (W)

10.0

5

200

1000.0

ID (Amps)

Ciss

800

120

80

40

0.0

0
0.01

0.1

1
VDS (Volts)

10

100

0.0001

0.001

0.01

0.1

1

10

Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)

Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)

Zθ JC Normalized Transient
Thermal Resistance

10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
1

RθJC=5.5°C/W

0.1
PD
0.01

Ton

T

Single Pulse
0.001
0.00001

0.0001

0.001

0.01

0.1

1

10

Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

Rev1: Mar. 2011

www.aosmd.com

Page 4 of 10

AON6912A

Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
IAR (A) Peak Avalanche Current

25

Power Dissipation (W)

TA=25°C
TA=100°C

TA=150°C
TA=125°C

20

15

10

5

0

10
0.000001

0.00001

0.0001

0

0.001

25

75
100
125
TCASE (°
°C)
Figure 13: Power De-rating (Note F)

Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability (Note
C)

50

10000

40
35

TA=25°C

1000

30
25

Power (W)

Current rating ID(A)

150

20
15

17
5
2
10

100

10

10
5

1

0
0

25

50

75
100
125
TCASE (°
°C)
Figure 14: Current De-rating (Note F)

0.1
10 0
1000
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)

0.00001

150

0.001

Zθ JA Normalized Transient
Thermal Resistance

10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1

40

RθJA=67°C/W

0.1

0.01
Single Pulse
0.001
0.00001

0.0001

0.001

0.01

0.1

1

10

100

1000

Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)

Rev1: Mar. 2011

www.aosmd.com

Page 5 of 10

AON6912A

Q2 Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol

Parameter

STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS

Zero Gate Voltage Drain Current

Conditions

Min

ID=250µA, VGS=0V

Max

30
1
TJ=55°C

5

IGSS

Gate-Body leakage current

VDS=0V, VGS= ±20V

Gate Threshold Voltage

VDS=VGS ID=250µA

1.3

ID(ON)

On state drain current

VGS=10V, VDS=5V

130

Units
V

VDS=30V, VGS=0V

VGS(th)

µA

100

nA

1.9

2.5

V

6.1

7.3

8.5

10.2

VGS=4.5V, ID=20A

8.3

10.4

VGS=10V, ID=20A
RDS(ON)

Typ

Static Drain-Source On-Resistance

TJ=125°C

A

gFS

Forward Transconductance

VDS=5V, ID=20A

60

VSD

Diode Forward Voltage

IS=1A,VGS=0V

0.7

IS

Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS
Ciss
Input Capacitance

mΩ
mΩ
S

1

V

35

A

870

1090

1300

pF

VGS=0V, VDS=15V, f=1MHz

340

490

640

pF

22

38

53

pF

VGS=0V, VDS=0V, f=1MHz

0.4

0.9

1.4

Ω

SWITCHING PARAMETERS
Qg(10V) Total Gate Charge

12

16

20

nC

Qg(4.5V) Total Gate Charge

5

7

9

nC

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Rg

Gate resistance

Qgs

Gate Source Charge

Qgd

Gate Drain Charge

tD(on)

Turn-On DelayTime

tr

Turn-On Rise Time

tD(off)

Turn-Off DelayTime

VGS=10V, VDS=15V, ID=20A

2

2.5

3

nC

1.5

2.5

3.5

nC

VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω

5

ns

2

ns

16

ns

tf

Turn-Off Fall Time

trr

Body Diode Reverse Recovery Time

IF=20A, dI/dt=500A/µs

10

13

2
16

ns

Qrr

Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs

20

25

30

ns
nC

A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev1: Mar. 2011

www.aosmd.com

Page 6 of 10

AON6912A

Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100

50
10V

4V

4.5V

VDS=5V

80

40
3.5V

30
ID(A)

ID (A)

60

40

20

20

10

125°C
VGS=3V

25°C
0

0
0

1

2

3

4

1

5

15

2

2.5

3

3.5

4

Normalized On-Resistance

1.6

12
VGS=4.5V
RDS(ON) (mΩ
Ω)

1.5

VGS(Volts)
Figure 2: Transfer Characteristics (Note E)

VDS (Volts)
Fig 1: On-Region Characteristics (Note E)

9
6
VGS=10V
3

VGS=10V
ID=20A
1.4

17
5
2
10

1.2

VGS=4.5V
ID=20A

1

0.8

0
0

5

0

10

15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)

25

50

75

100

125

150

175

0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)

30

1.0E+02
ID=20A

1.0E+01

25

40

1.0E+00
IS (A)

RDS(ON) (mΩ
Ω)

20
125°C

15
10

125°C

1.0E-01
1.0E-02

25°C

1.0E-03

5

1.0E-04

25°C

1.0E-05

0
2

6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)

Rev1: Mar. 2011

4

www.aosmd.com

0.0

0.2

0.4

0.6

0.8

1.0

1.2

VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)

Page 7 of 10

AON6912A

Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10

1800

1400
Capacitance (pF)

VGS (Volts)

1600

VDS=15V
ID=20A

8

6

4

Ciss

1200
1000
800
600

Coss

400

2

Crss

200
0

0
0

3

6

9
12
15
Qg (nC)
Figure 7: Gate-Charge Characteristics

18

0

100.0

160

10µs

RDS(ON)
limited

100µs

10.0

1ms

DC
1.0

10ms

Power (W)

ID (Amps)

30

200

1000.0

TJ(Max)=150°C

0.1

TJ(Max)=150°C
TC=25°C

120
80
40

0.0

0
0.01

0.1

1
VDS (Volts)

10

100

0.0001

10

0.01

0.1

1

10

In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
1

0.001

Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)

Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)

Zθ JC Normalized Transient
Thermal Resistance

5
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics

40

RθJC=4.2°C/W

0.1
Single Pulse

PD

0.01
Ton

T

0.001
0.00001

0.0001

0.001

0.01

0.1

1

10

Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

Rev1: Mar. 2011

www.aosmd.com

Page 8 of 10

AON6912A

Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
IAR (A) Peak Avalanche Current

35
TA=25°C
Power Dissipation (W)

30
TA=100°C
TA=125°C

TA=150°C

25
20
15
10
5
0

10

0

0.000001

0.00001
0.0001
0.001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability (Note
C)

25

50

75
100
125
TCASE (°
°C)
Figure 13: Power De-rating (Note F)

10000

60

TA=25°C

50

1000
40

Power (W)

Current rating ID(A)

150

30

17
5
2
10

100

20

10
10

1

0
0

25

50
75
100
125
TCASE (°
°C)
Figure 14: Current De-rating (Note F)

Zθ JA Normalized Transient
Thermal Resistance

10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1

150

0.1
10 0
1000
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note G)

0.00001

0.001

In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

40

RθJA=60°C/W

0.1

PD

0.01

Ton

Single Pulse

T

0.001
0.0001

0.001

0.01

0.1

1

10

100

1000

Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note G)

Rev1: Mar. 2011

www.aosmd.com

Page 9 of 10

AON6912A

Gate Charge Test Circuit & Waveform
Vgs
Qg
10V

+
+ Vds

VDC

-

Qgs

Qgd

VDC

-

DUT
Vgs
Ig

Charge

Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%

+ Vdd

DUT

Vgs

VDC

-

Rg

10%

Vgs

Vgs

t d(on)

tr

t d(off)

t on

tf
toff

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L

2

E AR = 1/2 LIAR

Vds

BVDSS

Vds

Id

+ Vdd

Vgs

Vgs

I AR

VDC

-

Rg

Id

DUT
Vgs

Vgs

Diode Recovery Test Circuit & Waveforms
Q rr = - Idt

Vds +
DUT

Vds Isd
Vgs
Ig

Rev1: Mar. 2011

Vgs

L

Isd

+ Vdd

t rr

dI/dt
I RM
Vdd

VDC

-

IF

Vds

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Page 10 of 10

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