AON7702A Datasheet. Www.s Manuals.com. R1 Ao

User Manual: Marking of electronic components, SMD Codes 7702A, 7716A. Datasheets AON7702A, Si7716ADN.

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AON7702A

30V N-Channel MOSFET

General Description Product Summary

V

DS

I

D

(at V

GS

=10V) 36A

R

DS(ON)

(at V

GS

=10V) < 10mΩ

R

DS(ON)

(at V

GS

= 4.5V) < 13mΩ

100% UIS Tested

100% R

g

Tested

Symbol

V

DS

V

GS

I

DM

I

AS

, I

AR

E

AS

, E

AR

T

J

, T

STG

Symbol

t ≤ 10s

Steady-State

Steady-State

R

θJC

Typ Max

T

C

=25°C

3.1

9

T

C

=100°C

Junction and Storage Temperature Range -55 to 150 °C

Thermal Characteristics

Units

Maximum Junction-to-Ambient

A

°C/W

R

θJA

30

60

40

Parameter

V±12Gate-Source Voltage

Drain-Source Voltage 30

mJ

Avalanche Current

C

11

A

SRFET

TM

AON7702A uses advanced trench technology

with a monolithically integrated Schottky diode to provide

excellent R

DS(ON)

,and low gate charge. This device is

suitable for use as a low side FET in SMPS, load

switching and general purpose applications.

V

Maximum UnitsParameter

Absolute Maximum Ratings T

A

=25°C unless otherwise noted

30V

A

T

A

=25°C I

DSM

A

T

A

=70°C

80Pulsed Drain Current

C

Continuous Drain

Current I

D

36

22

T

C

=25°C

T

C

=100°C

Power Dissipation

B

P

D

Continuous Drain

Current

11

13.5

15

Avalanche energy L=0.1mH

C

W

Power Dissipation

A

P

DSM

W

T

A

=70°C

23

2

T

A

=25°C

Maximum Junction-to-Case °C/W

°C/W

Maximum Junction-to-Ambient

A D

4.5

75

5.4

Top View

1

2

3

4

8

7

6

5

DFN 3x3A

Top View Bottom View

Pin 1

G

D

S

SRFET

TM

Soft Recovery MOSFET:

Integrated Schottky Diode

SRFET

TM

Rev 1: Feb. 2011 www.aosmd.com Page 1 of 6

Symbol Min Typ Max Units

BV

DSS

30 V

V

DS

=30V, V

GS

=0V 0.5

T

J

=125°C 100

I

GSS

100 nA

V

GS(th)

Gate Threshold Voltage 1.2 1.65 2.1 V

I

D(ON)

80 A

8.2 10

T

J

=125°C 12.5 15

9.9 13 mΩ

g

FS

80 S

V

SD

0.4 0.7 V

I

S

30 A

C

iss

930 1170 1400 pF

C

oss

90 128 170 pF

C

rss

45 89 125 pF

R

g

0.7 1.4 2.1 Ω

Q

g

(10V) 16 20 24 nC

Q

g

(4.5V) 7 8.7 10.5 nC

Q

gs

3.2 nC

Q

gd

3 nC

t

D(on)

6 ns

t

r

2.4 ns

t

D(off)

23 ns

t

f

4 ns

t

rr

5.5 7 8.5 ns

Q

rr

56.5 8 nC

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Maximum Body-Diode Continuous Current

Input Capacitance

Output Capacitance

Turn-On DelayTime

DYNAMIC PARAMETERS

V

GS

=10V, V

DS

=15V, I

D

=13A

Body Diode Reverse Recovery Charge I

F

=13A, dI/dt=500A/µs

Turn-Off DelayTime

V

GS

=10V, V

DS

=15V, R

L

=1.2Ω,

R

GEN

=3Ω

Turn-Off Fall Time

Body Diode Reverse Recovery Time I

F

=13A, dI/dt=500A/µs

Turn-On Rise Time

V

GS

=0V, V

DS

=0V, f=1MHz

Total Gate Charge

Reverse Transfer Capacitance

V

GS

=0V, V

DS

=15V, f=1MHz

SWITCHING PARAMETERS

Gate Source Charge

Gate Drain Charge

Total Gate Charge

Gate resistance

V

GS

=4.5V, I

D

=11A

Forward Transconductance

Diode Forward Voltage I

S

=1A,V

GS

=0V

V

DS

=5V, I

D

=13A

Static Drain-Source On-Resistance

I

DSS

mA

V

DS

=V

GS

I

D

=250µA

V

DS

=0V, V

GS

= ±12V

Zero Gate Voltage Drain Current

Gate-Body leakage current

mΩ

On state drain current

Electrical Characteristics (T

J

=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter Conditions

Drain-Source Breakdown Voltage I

D

=250µA, V

GS

=0V

V

GS

=10V, V

DS

=5V

V

GS

=10V, I

D

=13A

R

DS(ON)

A. The value of R

θJA

is measured with the device mounted on 1in

2

FR-4 board with 2oz. Copper, in a still air environment with T

A

=25°C. The

Power dissipation P

DSM

is based on R

θJA

t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given

application depends on the user's specific board design, and the maximum temperature of 150°C may be u sed if the PCB allows it.

B. The power dissipation P

D

is based on T

J(MAX)

=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper

dissipation limit for cases where additional heatsinking is used.

C. Repetitive rating, pulse width limited by junction temperature T

J(MAX)

=150°C. Ratings are based on low frequency and duty cycles to keep

initial T

J

=25°C.

D. The R

θJA

is the sum of the thermal impedence from junction to case R

θJC

and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,

assuming a maximum junction temperature of T

J(MAX)

=150°C. The SOA curve provides a single pulse ratin g.

G. The maximum current rating is package limited.

H. These tests are performed with the device mounted on 1 in

2

FR-4 board with 2oz. Copper, in a still air environment with T

A

=25°C.

Rev 1: Feb. 2011 www.aosmd.com Page 2 of 6

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

40

0

5

10

15

20

25

30

35

1.5 1.75 2 2.25 2.5 2.75 3

V

GS

(Volts)

Figure 2: Transfer Characteristics (Note E)

I

D

(A)

6

7

8

9

10

11

12

1 6 11 16 21 26

I

D

(A)

Figure 3: On-Resistance vs. Drain Current and

Gate Voltage (Note E)

R

DS(ON)

(mΩ

Ω

Ω

Ω)

1.0E-04

1.0E-03

1.0E-02

1.0E-01

1.0E+00

1.0E+01

1.0E+02

0.0 0.2 0.4 0.6 0.8 1.0

V

SD

(Volts)

Figure 6: Body-Diode Characteristics (Note E)

I

S

(A)

25°C

125°C

0.8

1

1.2

1.4

1.6

1.8

2

0 25 50 75 100 125 150 175 200

Temperature (°C)

Figure 4: On-Resistance vs. Junction Temperature

(Note E)

Normalized On-Resistance

V

GS

=4.5V

I

D

=11A

V

GS

=10V

I

D

=13A

5

10

15

20

25

2 4 6 8 10

V

GS

(Volts)

Figure 5: On-Resistance vs. Gate-Source Voltage

(Note E)

R

DS(ON)

(mΩ

Ω

Ω

Ω)

25°C

125°C

V

DS

=5V

V

GS

=4.5V

V

GS

=10V

I

D

=13A

25°C

125°C

0

5

10

15

20

25

30

35

012345

V

DS

(Volts)

Fig 1: On-Region Characteristics (Note E)

I

D

(A)

V

GS

=2.25V

2.5V

3V

10V

2.75V

Rev 1: Feb. 2011 www.aosmd.com Page 3 of 6

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

17

5

2

10

0

18

40

0

2

4

6

8

10

0 5 10 15 20 25

Q

g

(nC)

Figure 7: Gate-Charge Characteristics

V

GS

(Volts)

0

300

600

900

1200

1500

0 10 20 30

V

DS

(Volts)

Figure 8: Capacitance Characteristics

Capacitance (pF)

C

iss

0

40

80

120

160

200

0.0001 0.001 0.01 0.1 1 10

Pulse Width (s)

Figure 10: Single Pulse Power Rating Junction-to-

Case (Note F)

Power (W)

0.01

0.1

1

10

0.00001 0.0001 0.001 0.01 0.1 1 10 100

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

Z

θ

θ

θ

θJC

Normalized Transient

Thermal Resistance

C

oss

C

rss

V

DS

=15V

I

D

=13A

Single Pulse

D=T

on

/T

T

J,PK

=T

C

+P

DM

.Z

θJC

.R

θJC

T

on

T

P

D

In descending order

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

T

J(Max)

=150°C

T

C

=25°C

10

µ

s

0.0

0.1

1.0

10.0

100.0

1000.0

0.01 0.1 1 10 100

V

DS

(Volts)

I

D

(Amps)

Figure 9: Maximum Forward Biased

Safe Operating Area (Note F)

10

µ

s

10ms

1ms

DC

R

DS(ON)

limited

T

J(Max)

=150°C

T

C

=25°C

100

µ

s

R

θJC

=5.4°C/W

Rev 1: Feb. 2011 www.aosmd.com Page 4 of 6

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

17

5

2

10

0

18

40

0.001

0.01

0.1

1

10

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

Pulse Width (s)

Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)

Z

θ

θ

θ

θJA

Normalized Transient

Thermal Resistance

Single Pulse

D=T

on

/T

T

J,PK

=T

A

+P

DM

.Z

θJA

.R

θJA

T

on

T

P

D

In descending order

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

0

5

10

15

20

25

0 25 50 75 100 125 150

T

CASE

(°C)

Figure 13: Power De-rating (Note F)

Power Dissipation (W)

0

5

10

15

20

25

30

35

40

0 25 50 75 100 125 150

T

CASE

(°C)

Figure 14: Current De-rating (Note F)

Current rating I

D

(A)

1

10

100

1000

10000

0.00001 0.001 0.1 10 1000

Pulse Width (s)

Figure 15: Single Pulse Power Rating Junction-to-

Ambient (Note H)

Power (W)

T

A

=25°C

R

θJA

=75°C/W

10.0

100.0

1 10 100 1000

Time in avalanche, t

A

(µ

µµ

µs)

Figure 12: Single Pulse Avalanche capability (Note

C)

I

AR

(A) Peak Avalanche Current

T

A

=25°C

T

A

=150°C T

A

=100°C

T

A

=125°C

Rev 1: Feb. 2011 www.aosmd.com Page 5 of 6

-

+

VDC

Ig

Vds

DUT

-

+

VDC

Vgs

Vgs

10V

Qg

Qgs Qgd

Charge

Gate Charge Test Circuit & Waveform

-

+

VDC

DUT Vdd

Vgs

Vds

Vgs

RL

Rg

Vgs

Vds

10%

90%

Resistive Switching Test Circuit & Waveforms

t t

r

d(on)

t

on

t

d(off)

t

f

t

off

Vdd

Vgs

Id

Vgs

Rg

DUT

-

+

VDC

L

Vgs

Vds

Id

Vgs

BV

I

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

Ig

Vgs

-

+

VDC

DUT

L

Vds

Vgs

Vds

Isd

Isd

Diode Recovery Test Circuit & Waveforms

Vds -

Vds +

I

F

AR

DSS

2

E = 1/2 LI

dI/dt

I

RM

rr

Vdd

Vdd

Q = - Idt

AR

AR

t

rr

Rev 1: Feb. 2011 www.aosmd.com Page 6 of 6

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