AP2316GN HF 3 Datasheet. Www.s Manuals.com. Apec
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Advanced Power
Electronics Corp.
AP2316GN-HF-3
N-channel Enhancement-mode Power MOSFET
Simple Drive Requirement
D
BV DSS
Low Gate Charge
30V
R DS(ON)
Surface Mount Device
G
RoHS-compliant, halogen-free
42mΩ
ID
4.7A
S
Description
D
Advanced Power MOSFETs from APEC provide the designer with the best
combination of fast switching, low on-resistance and cost-effectiveness.
S
The AP2316GN-HF-3 is in the popular SOT-23 small surface-mount package
which is widely used in commercial and industrial applications where a small
board footprint is required.
This device is well suited for use in medium current applications such as
load switches.
SOT-23
G
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID at TA =25°C
ID at TA= 70°C
Rating
Units
30
V
+ 20
V
Continuous Drain Current
3
4.7
A
Continuous Drain Current
3
3.7
A
10
A
1.38
W
1
IDM
Pulsed Drain Current
PD at TA=25°C
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
°C
TJ
Operating Junction Temperature Range
-55 to 150
°C
Thermal Data
Parameter
Value
Unit
Maximum Thermal Resistance, Junction-ambient
90
°C/W
Symbol
Rthj-a
Ordering Information
AP2316GN-HF-3TR
RoHS-compliant halogen-free SOT-23, shipped on tape and reel, 3000pcs/ reel
©2010 Advanced Power Electronics Corp. USA
www.a-powerusa.com
201008182-3
1/5
Advanced Power
Electronics Corp.
AP2316GN-HF-3
Electrical Specifications at Tj=25°C (unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
30
-
-
V
BVDSS
Drain-Source Breakdown Voltage
∆ BV DSS/∆ Tj
Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA
-
0.02
-
V/°C
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=4A
-
-
42
mΩ
VGS=4.5V, ID=2A
-
-
72
mΩ
VGS=0V, ID=250uA
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=4A
-
5
-
S
IDSS
Drain-Source Leakage Current
VDS=30V, VGS=0V
-
-
1
uA
VDS=24V,VGS=0V, TJ=70°C
-
-
10
uA
VGS=±20V
-
-
±100
nA
ID=4A
-
5
8
nC
IGSS
Gate-Source Leakage
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=24V
-
1
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
3
-
nC
VDS=15V
-
7
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=1A
-
8
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω, VGS=10V
-
12
-
ns
tf
Fall Time
RD=15Ω
-
3
-
ns
Ciss
Input Capacitance
VGS=0V
-
270
430
pF
Coss
Output Capacitance
VDS=25V
-
70
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
60
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.4
2.1
Ω
Min.
Typ.
IS=1.2A, VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=4A, VGS=0V,
-
14
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
9
-
nC
Notes:
1. Pulse width limited by maximum junction temperature.
2. Pulse test - pulse width < 300µs , duty cycle < 2%
2
3. Surface mounted on 1in copper pad of FR4 board, t <10sec; 270°C/W when mounted on minimum copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
©2010 Advanced Power Electronics Corp. USA
www.a-powerusa.com
2/5
Advanced Power
Electronics Corp.
AP2316GN-HF-3
Typical Electrical Characteristics
12
12
10V
7.0V
5.0V
4.5V
ID , Drain Current (A)
8
V G = 3.0 V
4
0
8
V G = 3.0 V
4
0
0
1
2
3
4
0
V DS , Drain-to-Source Voltage (V)
2
3
4
Fig 2. Typical Output Characteristics
65
1.8
ID=2A
ID=4A
V G =10V
o
T A =25 C
1.5
Normalized RDS(ON)
55
RDS(ON) (mΩ )
1
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
45
35
1.2
0.9
25
0.6
2
4
6
8
10
-50
Fig 3.
On-Resistance vs.
Gate Voltage
50
100
150
Fig 4. Normalized On-Resistance
vs. Junction Temperature
1.8
3.0
1.4
Normalized VGS(th) (V)
4.0
T j =150 o C
0
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
IS(A)
10 V
7.0 V
5.0 V
4.5 V
o
T A = 150 C
ID , Drain Current (A)
o
T A =25 C
T j =25 o C
2.0
1.0
1.0
0.6
0.0
0.2
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
©2010 Advanced Power Electronics Corp. USA
www.a-powerusa.com
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage vs.
Junction Temperature
3/5
Advanced Power
Electronics Corp.
AP2316GN-HF-3
Typical Electrical Characteristics (cont.)
f=1.0MHz
1000
I D =4A
8
V DS =15V
V DS =20V
V DS =24V
6
C iss
C (pF)
VGS , Gate to Source Voltage (V)
10
100
C oss
C rss
4
2
10
0
0
2
4
6
1
8
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (Rthja)
Duty factor=0.5
10
ID (A)
100us
1ms
1
10ms
100ms
0.1
o
1s
DC
T A =25 C
Single Pulse
0.2
0.1
0.1
0.05
PDM
t
0.01
T
0.01
Single Pulse
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Rthja = 270°C/W
0.001
0.01
0.1
1
10
100
0.0001
0.001
0.01
V DS , Drain-to-Source Voltage (V)
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
12
VG
V DS =5V
ID , Drain Current (A)
9
T j =25 o C
QG
T j =150 o C
4.5V
QGS
6
QGD
3
Charge
Q
0
0
2
4
6
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
©2010 Advanced Power Electronics Corp. USA
www.a-powerusa.com
Fig 12. Gate Charge Waveform
4/5
Advanced Power
Electronics Corp.
AP2316GN-HF-3
Package Dimensions: SOT-23
D
Millimeters
SYMBOLS
D1
E1
E
e
A A2
MIN
NOM
MAX
A
0.88
--
1.30
A1
0.00
--
0.10
A2
0.08
--
0.25
D1
0.30
0.40
0.50
e
1.70
2.00
2.30
D
2.70
2.90
3.10
E
2.20
2.60
3.00
E1
1.20
1.50
1.80
M
0°
--
10°
L
0.30
--
0.60
M
A1
M
L
1. All dimensions are in millimeters.
2. Dimensions do not include mold protrusions.
Marking Information: SOT-23
Product: NI = AP2316GN-HF-3
NIXX
Date/lot code
For details of how to convert this
to standard YYWW date code format,
please contact us directly.
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