AP2316GN HF 3 Datasheet. Www.s Manuals.com. Apec

User Manual: Marking of electronic components, SMD Codes NI**. Datasheets AP2316GN-HF-3.

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AP2316GN-HF-3

N-channel Enhancement-mode Power MOSFET

DSS

DS(ON)

D

Description

Absolute Maximum Ratings

Symbol Units

VDS

VGS

ID A

IDM

D at TA=25°C

TSTG

J

Symbol Value Unit

Parameter Rating

Gate-Source Voltage +

Continuous Drain Current3

Pulsed Drain Current1

Thermal Data

Parameter

Storage Temperature Range

A

dvanced Power MOSFETs from APEC provide the designer with the best

combination of fast switching, low on-resistance and cost-effectiveness.

The AP2316GN-HF-3 is in the popular SOT-23 small surface-mount package

BV 30V

Simple Drive Requirement

Low Gate Charge

Drain-Source Voltage 30 V

20 V

Rthj-a Maximum Thermal Resistance, Junction-ambient

which is widely used in commercial and industrial applications where a small

board footprint is required.

This device is well suited for use in medium current applications such as

load switches.

Ordering Information

D A

I Continuous Drain Current 3

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RoHS-compliant, halogen-free I 4.7A

at T =25°C 4.7 A

at T = 70°C 3.7 A

10 A

P Total Power Dissipation 1.38 W

-55 to 150 °C

T Operating Junction Temperature Range -55 to 150 °C

90 °C/W

©2010 Advanced Power Electronics Corp. USA 201008182-3

Surface Mount Device R 42mΩ

D

G

S

SOT-23

G

D

S

AP2316GN-HF-3TR RoHS-compliant halogen-free SOT-23, shipped on tape and reel, 3000pcs/ reel

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Electrical Specifications at Tj=25°C (unless otherwise specified)

Source-Drain Diode

Notes:

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.

APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED

HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE

1. Pulse width limited by maximum junction temperature.

RELIABILITY, FUNCTION OR DESIGN.

copper pad of FR4 board, t <10sec; 270°C/W when mounted on minimum copper pad.

2

2. Pulse test - pulse width < 300µs , duty cycle < 2%

3. Surface mounted on 1in

Symbol Parameter Test Conditions Min. Typ. Max. Units

BVDSS

Drain-Source Breakdown Voltage VGS=0V, ID=250uA 30 - - V

∆BVDSS/∆Tj Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA - 0.02 - V/°C

RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=4A - - 42 mΩ

VGS=4.5V, ID=2A - - 72 mΩ

VGS(th)

Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V

gfs

Forward Transconductance VDS=10V, ID=4A - 5 - S

IDSS

Drain-Source Leakage Current

VDS=30V, VGS=0V - - 1

uA

VDS=24V,VGS=0V, TJ=70°C - - 10 uA

IGSS Gate-Source Leakage VGS=±20V - - ±100 nA

Qg

Total Gate Charge2

ID=4A - 5 8

nC

Qgs

Gate-Source Charge VDS=24V - 1 -

nC

Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 3 - nC

td(on)

Turn-on Delay Time2

VDS=15V - 7 -

ns

tr

Rise Time ID=1A - 8 -

ns

td(off) Turn-off Delay Time RG=3.3Ω, VGS=10V - 12 - ns

tf

Fall Time RD=15Ω -3-ns

Ciss Input Capacitance VGS=0V - 270 430 pF

Coss Output Capacitance VDS=25V - 70 - pF

Crss Reverse Transfer Capacitance f=1.0MHz - 60 - pF

Rg

Gate Resistance f=1.0MHz - 1.4 2.1

Ω

Symbol Parameter Test Conditions Min. Typ. Max. Units

VSD Forward On Voltage2IS=1.2A, VGS=0V - - 1.2 V

trr Reverse Recovery Time2IS=4A, VGS=0V, - 14 - ns

Qrr Reverse Recovery Charge dI/dt=100A/µs - 9 - nC

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Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

vs. Junction Temperature

Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage vs.

Reverse Diode Junction Temperature

Typical Electrical Characteristics

Gate Voltage

Fig 3. On-Resistance vs. Fig 4. Normalized On-Resistance

0

4

8

12

01234

VDS , Drain-to-Source Voltage (V)

ID , Drain Current (A)

TA=25 oC

VG= 3.0 V

10V

7.0V

5.0V

4.5V

0

4

8

12

01234

VDS , Drain-to-Source Voltage (V)

ID , Drain Current (A)

TA= 150 oC 10 V

7.0 V

5.0 V

4.5 V

VG= 3.0 V

0.6

0.9

1.2

1.5

1.8

-50 0 50 100 150

Tj , Junction Temperature ( oC)

Normalized RDS(ON)

ID=4A

VG=10V

0.2

0.6

1.0

1.4

1.8

-50 0 50 100 150

Tj , Junction Temperature ( oC)

Normalized VGS(th) (V)

0.0

1.0

2.0

3.0

4.0

0 0.2 0.4 0.6 0.8 1 1.2

VSD , Source-to-Drain Voltage (V)

IS(A)

Tj=25 oCT j=150 oC

25

35

45

55

65

246810

VGS , Gate-to-Source Voltage (V)

RDS(ON) (mΩ)

ID=2A

TA=25 oC

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Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform

Typical Electrical Characteristics (cont.)

0

2

4

6

8

10

02468

QG , Total Gate Charge (nC)

VGS , Gate to Source Voltage (V)

ID=4A

VDS =15V

V DS =20V

V DS =24V

Q

VG

4.5V

QGS QGD

QG

Charge

0.001

0.01

0.1

1

0.0001 0.001 0.01 0.1 1 10 100 1000

t , Pulse Width (s)

Normalized Thermal Response (Rthja)

0.01

0.05

0.1

0.2

Duty factor=0.5

Single Pulse

PDM

Duty factor = t/T

Peak Tj = PDM x Rthja + Ta

Rthja = 270°C/W

t

T

0.01

0.1

1

10

100

0.1 1 10 100

VDS , Drain-to-Source Voltage (V)

ID (A)

100us

1ms

10ms

100ms

1s

DC

TA=25 oC

Single Pulse

0

3

6

9

12

0246

VGS , Gate-to-Source Voltage (V)

ID , Drain Current (A)

Tj=150 oCT j=25 oC

VDS =5V

10

100

1000

1 5 9 13 17 21 25 29

VDS , Drain-to-Source Voltage (V)

C (pF)

f

=1.0MH

z

Ciss

Coss

Crss

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AP2316GN-HF-3

©2010 Advanced Power Electronics Corp. USA

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Package Dimensions: SOT-23

Marking Information: SOT-23

NIXX

Product: NI = AP2316GN-HF-3

Date/lot code

For details of how to convert this

to standard YYWW date code format,

please contact us directly.

1. All dimensions are in millimeters.

2. Dimensions do not include mold protrusions.

Millimeters

MIN NOM MAX

A 0.88 -- 1.30

A1 0.00 -- 0.10

A2 0.08 -- 0.25

D1 0.30 0.40 0.50

e 1.70 2.00 2.30

D 2.70 2.90 3.10

E 2.20 2.60 3.00

E1 1.20 1.50 1.80

M 0° -- 10°

L 0.30 -- 0.60

SYMBOLS

D

E1 E

e

D1

AA2

A1

M

M

L

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