AP40T03GP HF 3, AP40T03GS 3 Datasheet. Www.s Manuals.com. 20050331 Apec

User Manual: Datasheets AP40T03GH, AP40T03GH-HF, AP40T03GJ, AP40T03GJ-HF, AP40T03GP, AP40T03GP-HF-3, AP40T03GS, AP40T03GS-HF-3, AP40T03H, AP40T03J.

Open the PDF directly: View PDF .
Page Count: 7

Download
Open PDF In Browser	View PDF

Advanced Power
Electronics Corp.

AP40T03GP/S-HF-3

N-channel Enhancement-mode Power MOSFET
Simple Drive Requirement

D

BV DSS

Low Gate Charge
Fast Switching Performance

RDS(ON)

G

RoHS-compliant, halogen-free

30V

S

25mΩ

ID

28A

Description
Advanced Power MOSFETs from APEC provide the designer with the best
combination of fast switching, low on-resistance and cost-effectiveness.

G

D

S

TO-263 (S)

The AP40T03GS-HF-3 is in the TO-263 package, which is widely used
for commercial and industrial surface-mount applications, and is well
suited for low voltage applications such as DC/DC converters.
The AP40T03GP-HF-3 is in the TO-220 through-hole package which is
used where a low PCB footprint or an attached heatsink is required.
G

Absolute Maximum Ratings
Parameter

Symbol

D

TO-220 (P)
S

Rating

Units

VDS

Drain-Source Voltage

30

V

VGS

Gate-Source Voltage

±25

V

ID at TC=25°C

Continuous Drain Current

28

A

ID at TC=100°C

Continuous Drain Current

24

A

95

A

31.25

W

1

IDM

Pulsed Drain Current

PD at TC=25°C

Total Power Dissipation

TSTG

Storage Temperature Range

-55 to 150

°C

TJ

Operating Junction Temperature Range

-55 to 150

°C

Thermal Data
Symbol

Parameter

Value

Units

Rthj-c

Maximum Thermal Resistance, Junction-case

4

°C/W

Rthj-a

Maximum Thermal Resistance, Junction-ambient

62

°C/W

Ordering Information
AP40T03GS-HF-3TR

RoHS-compliant, halogen-free TO-263, shipped on tape and reel (800 pcs/reel)

AP40T03GP-HF-3TB

RoHS-compliant, halogen-free TO-220, shipped in tubes

©2010 Advanced Power Electronics Corp. USA
www.a-powerusa.com

200503313-3

1/6

Advanced Power
Electronics Corp.

AP40T03GP/S-HF-3

Electrical Specifications at Tj=25°C (unless otherwise specified)
Symbol

Parameter

Test Conditions

Typ.

Max. Units

30

-

-

V

BVDSS

Drain-Source Breakdown Voltage

∆ BV DSS/∆ Tj

Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA

-

0.032

-

V/°C

RDS(ON)

Static Drain-Source On-Resistance

VGS=10V, ID=18A

-

-

25

mΩ

VGS=4.5V, ID=14A

-

-

45

mΩ

VDS=VGS, ID=250uA

1

-

3

V

VDS=10V, ID=18A

-

15

-

S

VDS=30V, VGS=0V

-

-

1

uA

Drain-Source Leakage Current (T j=150 C)

VDS=24V ,VGS=0V

-

-

25

uA

Gate-Source Leakage

VGS= ±25V

-

-

±100

nA

ID=18A

-

8.8

-

nC

VGS(th)

Gate Threshold Voltage

gfs

Forward Transconductance

VGS=0V, ID=250uA

Min.

o

IDSS

Drain-Source Leakage Current (T j=25 C)
o

IGSS

2

Qg

Total Gate Charge

Qgs

Gate-Source Charge

VDS=20V

-

2.5

-

nC

Qgd

Gate-Drain ("Miller") Charge

VGS=4.5V

-

5.8

-

nC

VDS=15V

-

6

-

ns

2

td(on)

Turn-on Delay Time

tr

Rise Time

ID=18A

-

62

-

ns

td(off)

Turn-off Delay Time

RG=3.3Ω, VGS=10V

-

16

-

ns

tf

Fall Time

RD=0.83Ω

-

4.4

-

ns

Ciss

Input Capacitance

VGS=0V

-

655

-

pF

Coss

Output Capacitance

VDS=25V

-

145

-

pF

Crss

Reverse Transfer Capacitance

f=1.0MHz

-

95

-

pF

Min.

Typ.

-

-

28

A

-

-

95

A

-

-

1.3

V

Source-Drain Diode
Symbol
IS
ISM
VSD

Parameter

Test Conditions
VD=VG=0V , VS=1.3V

Continuous Source Current ( Body Diode )

Pulsed Source Current ( Body Diode )
2

Forward On Voltage

1

Tj=25°C, IS=28A, VGS=0V

Max. Units

Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.

©2010 Advanced Power Electronics Corp. USA
www.a-powerusa.com

2/6

Advanced Power
Electronics Corp.

AP40T03GP/S-HF-3

Typical Electrical Characteristics
90

75

10V
8 .0V

ID , Drain Current (A)

6 .0V

60

30

50

6 .0V

25

V G =4.0V

V G = 4. 0V

0

0
0.0

1.0

2.0

3.0

4.0

0.0

V DS , Drain-to-Source Voltage (V)

1.0

2.0

3.0

4.0

V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics
2.0

70

I D =18A
V G =10V
Normalized RDS(ON)

I D =14A
T C =25 ° C
50

RDS(ON) (mΩ )

10V
8 .0V

o

T C =150 C
ID , Drain Current (A)

o

T C =25 C

30

1.4

0.8

0.2

10
0

5

10

-50

15

0

50

100

150

T j , Junction Temperature ( o C)

V GS , Gate-to-Source Voltage (V)

Fig 3. On-Resistance vs. Gate Voltage

Fig 4. Normalized On-Resistance
vs. Junction Temperature
2.5

100

2.0
10

T j =25 o C

IS(A)

VGS(th) (V)

T j =150 o C

1.5

1
1.0

0.1

0.5
0

0.4

0.8

1.2

V SD , Source-to-Drain Voltage (V)

Fig 5. Forward Characteristic of
Reverse Diode

©2010 Advanced Power Electronics Corp. USA
www.a-powerusa.com

1.6

-50

0

50

100

150

T j , Junction Temperature ( o C )

Fig 6. Gate Threshold Voltage vs.
Junction Temperature

3/6

Advanced Power
Electronics Corp.

AP40T03GP/S-HF-3

Typical Electrical Characteristics (cont.)
f=1.0MHz
12

1000

9

C iss
V DS =10V
V DS =15V
V DS =20V

C (pF)

VGS , Gate to Source Voltage (V)

I D =18A

6

C oss
C rss

100

3

10

0
0

3

6

9

1

12

8

15

22

29

V DS ,Drain-to-Source Voltage (V)

Q G , Total Gate Charge (nC)

Fig 7. Gate Charge Characteristics

Fig 8. Typical Capacitance Characteristics

100

1

Normalized Thermal Response (Rthjc)

ID (A)

Duty factor = 0.5

100us
10

1ms
o

T C =25 C
Single Pulse

10ms
100ms
DC

1

0.2

0.1

0.1
0.05

PDM

0.02

t
0.01

T

Single Pulse

Duty Factor = t/T
Peak Tj = PDM x Rthjc + T C

0.01
0.1

1

10

100

0.00001

0.0001

0.001

Fig 9. Maximum Safe Operating Area

0.01

0.1

1

t , Pulse Width (s)

V DS ,Drain-to-Source Voltage (V)

Fig 10. Effective Transient Thermal Impedance

VG

VDS
90%

QG
10V
Q

GS

QGD

10%
VGS
td(on) tr

td(off) tf

Fig 11. Switching Time Waveforms

©2010 Advanced Power Electronics Corp. USA
www.a-powerusa.com

Charge

Q

Fig 12. Gate Charge Waveform

4/6

Advanced Power
Electronics Corp.

AP40T03GP/S-HF-3

Package Dimensions: TO-220
E

A

E1

SYMBOLS

φ

Millimeters
MIN

L1 L5
c1

D1
D
L4

4.40

4.60

4.80

b
D
c
E

0.76

0.88

1.00

8.60

8.80

9.00

0.36

0.43

0.50

9.80

10.10

10.40

L4

14.70

15.00

15.30

L5

6.20

6.40

6.60

5.10 REF.

c1

1.25

1.35

1.45

b1

1.17

1.32

1.47

L

13.25

13.75

14.25

e

L

c

b

MAX

A

D1

b1

NOM

2.54 REF.

L1

2.60

2.75

2.89

φ
E1

3.71

3.84

3.96

7.4 REF,

1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.

e

Marking Information: TO-220
Product: AP40T03

40T03GP
YWWSSS

©2010 Advanced Power Electronics Corp. USA
www.a-powerusa.com

Package code
GP = RoHS-compliant halogen-free TO-220

Date/lot code (YWWSSS)
Y: Last digit of the year
WW: Work week
SSS: Lot code sequence

5/6

Advanced Power
Electronics Corp.

AP40T03GP/S-HF-3

Package Dimensions: TO-263
E
SYMBOLS

D

b1

L2

L3
b

e

L4

Millimeters
MIN

NOM

MAX

A

4.25

4.75

5.20

A1

0.00

0.15

0.30

A2

2.20

2.45

2.70

b

0.70

0.90

1.10

b1

1.07

1.27

1.47

c

0.30

0.45

0.60

c1

1.15

1.30

1.45

D

8.30

8.90

9.40

E

9.70

10.10

10.50

e

2.04

2.54

3.04

L2

-----

1.50

-----

L3

4.50

4.90

5.30

L4

-----

1.50

----

A
1. All dimensions are in millimeters.
2. Dimensions do not include mold protrusions.

c .φ

c1

A1

Marking Information: TO-263

Product: AP40T03

40T03GS
YWWSSS

©2010 Advanced Power Electronics Corp. USA
www.a-powerusa.com

Package code:
GS = RoHS-compliant halogen-free TO-263
Date Code (YWWSSS)
Y : Last digit of the year
WW : Work week
SSS : Lot code sequence

6/6

www.s-manuals.com

Source Exif Data:

File Type                       : PDF
File Type Extension             : pdf
MIME Type                       : application/pdf
PDF Version                     : 1.6
Linearized                      : No
Page Mode                       : UseNone
XMP Toolkit                     : Adobe XMP Core 4.0-c316 44.253921, Sun Oct 01 2006 17:14:39
Producer                        : Acrobat Distiller 7.0.5 (Windows)
Create Date                     : 2006:02:21 10:55:24+08:00
Creator Tool                    : PScript5.dll Version 5.2
Modify Date                     : 2016:02:24 22:32:05+02:00
Metadata Date                   : 2016:02:24 22:32:05+02:00
Document ID                     : uuid:97cf23d1-caf6-47d7-b8b9-5c1cd4351cee
Instance ID                     : uuid:b006f82e-9d1f-41c0-aba3-ed07db169cbc
Format                          : application/pdf
Creator                         : 
Title                           : AP40T03GP-HF-3, AP40T03GS-HF-3 - Datasheet. www.s-manuals.com.
Description                     : 
Subject                         : AP40T03GP-HF-3, AP40T03GS-HF-3 - Datasheet. www.s-manuals.com.
Page Count                      : 7
Keywords                        : AP40T03GP-HF-3, AP40T03GS-HF-3 - Datasheet. www.s-manuals.com.
Warning                         : [Minor] Ignored duplicate Info dictionary

EXIF Metadata provided by EXIF.tools

AP40T03GP HF 3, AP40T03GS 3 Datasheet. Www.s Manuals.com. 20050331 Apec

Navigation menu

Versions of this User Manual:

Views

Navigation