AP40T03GP HF 3, AP40T03GS 3 Datasheet. Www.s Manuals.com. 20050331 Apec

User Manual: Datasheets AP40T03GH, AP40T03GH-HF, AP40T03GJ, AP40T03GJ-HF, AP40T03GP, AP40T03GP-HF-3, AP40T03GS, AP40T03GS-HF-3, AP40T03H, AP40T03J.

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200503313-3

Advanced Power

Electronics Corp.

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AP40T03GP/S-HF-3

©2010 Advanced Power Electronics Corp. USA

www.a-powerusa.com

N-channel Enhancement-mode Power MOSFET

DSS

DS(ON)

D

Description

Absolute Maximum Ratings

Thermal Data

A

dvanced Power MOSFETs from APEC provide the designer with the best

combination of fast switching, low on-resistance and cost-effectiveness.

The AP40T03GS-HF-3 is in the TO-263 package, which is widely used

BV 30V

Fast Switching Performance R 25mΩ

Simple Drive Requirement

Low Gate Charge

RoHS-compliant, halogen-free I 28A

for commercial and industrial surface-mount applications, and is well

suited for low voltage applications such as DC/DC converters.

The AP40T03GP-HF-3 is in the TO-220 through-hole package which is

used where a low PCB footprint or an attached heatsink is required.

GDSTO-263 (S)

GDSTO-220 (P)

Ordering Information

AP40T03GS-HF-3TR RoHS-compliant, halogen-free TO-263, shipped on tape and reel (800 pcs/reel)

AP40T03GP-HF-3TB RoHS-compliant, halogen-free TO-220, shipped in tubes

Symbol Units

VDS

VGS

ID at TC=25°C

ID at TC=100°C

IDM

PD at TC=25°C

TSTG

TJ

Symbol Value Units

Rthj-c Maximum Thermal Resistance, Junction-case 4 °C/W

Rthj-a Maximum Thermal Resistance, Junction-ambient 62 °C/W

-55 to 150 °C

Drain-Source Voltage 30 V

Parameter Rating

Gate-Source Voltage ±25 V

Continuous Drain Current 28 A

Continuous Drain Current 24 A

Pulsed Drain Current1 95 A

Total Power Dissipation 31.25 W

Parameter

Storage Temperature Range

Operating Junction Temperature Range -55 to 150 °C

G

D

S

G

D

S

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Electrical Specifications

at Tj=25°C (unless otherwise specified)

Source-Drain Diode

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.

APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED

HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE

RELIABILITY, FUNCTION OR DESIGN.

Symbol Parameter Test Conditions Min. Typ. Max. Units

BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 30 - - V

∆BVDSS/∆Tj Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA - 0.032 - V/°C

RDS(ON)

Static Drain-Source On-Resistance VGS=10V, ID=18A - - 25 mΩ

VGS=4.5V, ID=14A - - 45 mΩ

VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V

gfs Forward Transconductance VDS=10V, ID=18A - 15 - S

IDSS Drain-Source Leakage Current (Tj=25oC) VDS=30V, VGS=0V - - 1 uA

Drain-Source Leakage Current (Tj=150oC) VDS=24V ,VGS=0V - - 25 uA

IGSS Gate-Source Leakage VGS= ±25V - - ±100 nA

QgTotal Gate Charge2ID=18A - 8.8 - nC

Qgs Gate-Source Charge VDS=20V - 2.5 - nC

Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 5.8 - nC

td(on) Turn-on Delay Time2VDS=15V - 6 - ns

trRise Time ID=18A - 62 - ns

td(off)

Turn-off Delay Time RG=3.3Ω, VGS=10V - 16 -

ns

tf

Fall Time RD=0.83Ω - 4.4 -

ns

Ciss Input Capacitance VGS=0V - 655 - pF

Coss Output Capacitance VDS=25V - 145 - pF

Crss Reverse Transfer Capacitance f=1.0MHz - 95 - pF

Symbol Parameter Test Conditions Min. Typ. Max. Units

ISContinuous Source Current ( Body Diode ) VD=VG=0V , VS=1.3V - - 28 A

ISM Pulsed Source Current ( Body Diode )1--95

A

VSD

Forward On Voltage2

Tj=25°C, IS=28A, VGS=0V - - 1.3 V

Notes:

1.Pulse width limited by safe operating area.

2.Pulse width <300us , duty cycle <2%.

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Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

Fig 3. On-Resistance vs. Gate Voltage Fig 4. Normalized On-Resistance

vs. Junction Temperature

Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage vs.

Reverse Diode Junction Temperature

Typical Electrical Characteristics

0

25

50

75

0.0 1.0 2.0 3.0 4.0

VDS , Drain-to-Source Voltage (V)

ID , Drain Current (A)

TC=150 oC 10V

8.0V

6.0V

VG=4.0V

0

30

60

90

0.0 1.0 2.0 3.0 4.0

VDS , Drain-to-Source Voltage (V)

ID , Drain Current (A)

TC=25 oC 10V

8.0V

6.0V

VG=4.0V

0.2

0.8

1.4

2.0

-50 0 50 100 150

Tj , Junction Temperature ( oC)

Normalized RDS(ON)

I D=18A

VG=10V

10

30

50

70

0 5 10 15

VGS , Gate-to-Source Voltage (V)

RDS(ON) (mΩ)

I D=14A

T C

=25°C

0.1

1

10

100

0 0.4 0.8 1.2 1.6

VSD , Source-to-Drain Voltage (V)

IS(A)

Tj=25 oC

Tj=150 oC

0.5

1.0

1.5

2.0

2.5

-50 0 50 100 150

Tj , Junction Temperature ( oC )

VGS(th) (V)

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Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

Fig 11. Switching Time Waveforms Fig 12. Gate Charge Waveform

Typical Electrical Characteristics (cont.)

td(on) trtd(off) tf

VDS

VGS

10%

90%

Q

VG

10V

QGS QGD

QG

Charge

1

10

100

0.1 1 10 100

VDS ,Drain-to-Source Voltage (V)

ID (A)

T C=25 oC

S

in

g

le Puls

e

100us

1ms

10ms

100ms

DC

0.01

0.1

1

0.00001 0.0001 0.001 0.01 0.1 1

t , Pulse Width (s)

Normalized Thermal Response (Rthjc)

PDM

Duty Factor = t/T

Peak Tj = PDM x Rthjc + TC

t

T

0.02

0.01

0.05

0.1

0.2

Duty factor = 0.5

Single Pulse

0

3

6

9

12

036912

QG , Total Gate Charge (nC)

VGS , Gate to Source Voltage (V)

I D=18A

VDS =10V

VDS =15V

VDS =20V

10

100

1000

1 8 15 22 29

VDS ,Drain-to-Source Voltage (V)

C (pF)

f=1.0MHz

Ciss

Coss

Crss

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Package Dimensions: TO-220

Marking Information: TO-220

Product: AP40T03

GP = RoHS-compliant halogen-free TO-220

Date/lot code (YWWSSS)

Y: Last digit of the year

WW: Work week

SSS: Lot code sequence

Package code

Millimeters

MIN NOM MAX

A 4.40 4.60 4.80

b0.76 0.88 1.00

D8.60 8.80 9.00

c0.36 0.43 0.50

E9.80 10.10 10.40

L4 14.70 15.00 15.30

L5 6.20 6.40 6.60

D1

c1 1.25 1.35 1.45

b1 1.17 1.32 1.47

L 13.25 13.75 14.25

e

L1 2.60 2.75 2.89

φ 3.71 3.84 3.96

E1

1.All Dimensions Are in Millimeters.

2.Dimension Does Not Include Mold Protrusions.

2.54 REF.

7.4 REF,

SYMBOLS

5.10 REF.

E1

b

b1

e

DL4

L1

A

c1

c

L

40T03GP

YWWSSS

φ

L5

E

D1

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Package Dimensions: TO-263

Marking Information: TO-263

Product: AP40T03

Package code:

Date Code (YWWSSS)

Y: Last digit of the year

WW: Work week

SSS: Lot code sequence

GS = RoHS-compliant halogen-free TO-263

Millimeters

MIN NOM MAX

A 4.25 4.75 5.20

A1 0.00 0.15 0.30

A2 2.20 2.45 2.70

b 0.70 0.90 1.10

b1 1.07 1.27 1.47

c 0.30 0.45 0.60

c1 1.15 1.30 1.45

D 8.30 8.90 9.40

E 9.70 10.10 10.50

e 2.04 2.54 3.04

L2 ----- 1.50 -----

L3 4.50 4.90 5.30

L4 ----- 1.50 ----

1. All dimensions are in millimeters.

2. Dimensions do not include mold protrusions.

SYMBOLS

E

b

b1

e

D

L2

L3

c1

A

.

A1

L4

c

YWWSSS

40T03GS

YWWSSS

E

b

b1

e

D

L2

L3

c1

A

φ

A1

L4

c

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