AP4435GYT HF Datasheet. Www.s Manuals.com. 20100921 Apec

User Manual: Marking of electronic components, SMD Codes 44, 44-, 4407, 441NL, 4430, 4435GM, 4435GYT, 4459, 4459A, 4466, 4468, 449, 4496, 44T, 44W, 44p, 44s, 44t. Datasheets AO4407, AO4430L, AO4459L, AO4466L, AO4468L, AO4496L, AP4435GM, AP4435GM-HF, AP4435GYT-HF, BAS40-04, BAS40-04T, BAT54SW, FMMT449, SST441NL, Si4459ADY, TK71544AS.

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AP4435GYT-HF
Halogen-Free Product

Advanced Power
Electronics Corp.

P-CHANNEL ENHANCEMENT MODE
POWER MOSFET

▼ Simple Drive Requirement
▼ Small Size & Lower Profile
▼ RoHS Compliant & Halogen-Free

D

BVDSS
RDS(ON)
ID

-30V
21mΩ
-11A

G
S

D

Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The PMPAK® 3x3 package is special for DC-DC converters
application and lower 1.0mm profile with backside heat sink.

D

D
D

S

S

S

G
PMPAK ® 3x3

Absolute Maximum Ratings
Symbol

Parameter

VDS

Drain-Source Voltage

VGS

Gate-Source Voltage

ID@TA=25℃
ID@TA=70℃

Rating

Units

-30

V

+25

V

3

-11

A

3

-8.7

A

Continuous Drain Current
Continuous Drain Current
1

IDM

Pulsed Drain Current

-40

A

PD@TA=25℃

Total Power Dissipation

3.57

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

Thermal Data
Value

Unit

Rthj-c

Symbol

Maximum Thermal Resistance, Junction-case

6

℃/W

Rthj-a

Maximum Thermal Resistance, Junction-ambient 3

35

℃/W

Parameter

Data and specifications subject to change without notice

1
201009214

AP4435GYT-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)

Parameter

Test Conditions

Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance

2

Min.

Typ.

Max. Units

VGS=0V, ID=-250uA

-30

-

-

V

VGS=-10V, ID=-10A

-

17

21

mΩ

VGS=-4.5V, ID=-6A

-

26

36

mΩ

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=-250uA

-1

-1.95

-3

V

gfs

Forward Transconductance

VDS=-10V, ID=-6A

-

15

-

S

IDSS

Drain-Source Leakage Current

VDS=-30V, VGS=0V

-

-

-10

uA

IGSS

Gate-Source Leakage

VGS=+20V, VDS=0V

-

-

+100

nA

ID=-6A

-

15

24

nC

2

Qg

Total Gate Charge

Qgs

Gate-Source Charge

VDS=-15V

-

3

-

nC

Qgd

Gate-Drain ("Miller") Charge

VGS=-4.5V

-

8

-

nC

VDS=-15V

-

12

-

ns

2

td(on)

Turn-on Delay Time

tr

Rise Time

ID=-1A

-

7.5

-

ns

td(off)

Turn-off Delay Time

RG=3.3Ω,VGS=-10V

-

39

-

ns

tf

Fall Time

RD=15Ω

-

21

-

ns

Ciss

Input Capacitance

VGS=0V

-

1260 2000

pF

Coss

Output Capacitance

VDS=-15V

-

245

-

pF

Crss

Reverse Transfer Capacitance

f=1.0MHz

-

210

-

pF

Rg

Gate Resistance

f=1.0MHz

-

5.3

10.6

Ω

Min.

Typ.

Max. Units

IS=-2.9A, VGS=0V

-

-

1.2

V

Source-Drain Diode
Symbol
VSD

Parameter
2

Forward On Voltage

2

Test Conditions

trr

Reverse Recovery Time

IS=-6A, VGS=0V,

-

19

-

ns

Qrr

Reverse Recovery Charge

dI/dt=100A/µs

-

10

-

nC

Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec, 85oC at steady state.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.

2

AP4435GYT-HF
50

50

o

T A =25 C

40

-ID , Drain Current (A)

-ID , Drain Current (A)

40

-10V
-7.0V
-5.0V
-4.5V

T A = 150 o C

-10V
-7.0V
-5.0V
-4.5V

30

V G = -3.0V
20

10

30

V G = -3.0V
20

10

0

0

0

1

2

3

4

5

6

0

-V DS , Drain-to-Source Voltage (V)

1

2

3

4

5

6

-V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

32

1.6

I D =-10A
V G =-10V

I D = -6 A
T A =25 ℃
1.4

Normalized RDS(ON)

RDS(ON) (mΩ)

28

24

1.2

1.0

20

0.8

16

0.6
2

4

6

8

10

-50

-V GS , Gate-to-Source Voltage (V)

100

150

T j , Junction Temperature ( C)

Fig 4. Normalized On-Resistance
v.s. Junction Temperature

10

1.4

8

1.2

Normalized -VGS(th) (V)

-IS(A)

50

o

Fig 3. On-Resistance v.s. Gate Voltage

6

T j =150 o C

0

T j =25 o C

4

1.0

0.8

0.6

2

0.4

0

0

0.2

0.4

0.6

0.8

1

-V SD , Source-to-Drain Voltage (V)

Fig 5. Forward Characteristic of

Reverse Diode

1.2

-50

0

50

100

150

o

T j , Junction Temperature ( C)

Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3

AP4435GYT-HF
f=1.0MHz

1600

10

I D = -6 A

C iss

1200

C (pF)

-VGS , Gate to Source Voltage (V)

V DS = -15 V
8

6

800

4

400

C oss
C rss

2

0

0

0

10

20

30

1

5

Q G , Total Gate Charge (nC)

Fig 7. Gate Charge Characteristics

13

17

21

25

29

Fig 8. Typical Capacitance Characteristics

1

Operation in this area
limited by RDS(ON)
10

100us
1ms

1

10ms
100ms
1s

0.1

T A =25 o C
Single Pulse

DC

Normalized Thermal Response (Rthja)

100

-ID (A)

9

-V DS , Drain-to-Source Voltage (V)

Duty factor=0.5

0.2

0.1

0.1

PDM

0.05

t
T
0.02

Duty factor = t/T
Peak Tj = PDM x Rthja + T a

0.01

Rthia=85 ℃/W
Single Pulse

0.01

0.01
0.01

0.1

1

10

100

0.0001

0.001

0.01

0.1

1

10

100

1000

-V DS , Drain-to-Source Voltage (V)

t , Pulse Width (s)

Fig 9. Maximum Safe Operating Area

Fig 10. Effective Transient Thermal Impedance

VG

VDS
90%

QG
-4.5V
QGS

QGD

10%
VGS
td(on) tr

td(off) tf

Fig 11. Switching Time Waveform

Charge

Q

Fig 12. Gate Charge Waveform

4

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Title                           : AP4435GYT-HF - Datasheet. www.s-manuals.com.
Subject                         : AP4435GYT-HF - Datasheet. www.s-manuals.com.
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