AP4435GYT HF Datasheet. Www.s Manuals.com. 20100921 Apec

User Manual: Marking of electronic components, SMD Codes 44, 44-, 4407, 441NL, 4430, 4435GM, 4435GYT, 4459, 4459A, 4466, 4468, 449, 4496, 44T, 44W, 44p, 44s, 44t. Datasheets AO4407, AO4430L, AO4459L, AO4466L, AO4468L, AO4496L, AP4435GM, AP4435GM-HF, AP4435GYT-HF, BAS40-04, BAS40-04T, BAT54SW, FMMT449, SST441NL, Si4459ADY, TK71544AS.

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Advanced Power P-CHANNEL ENHANCEMENT MODE

Electronics Corp. POWER MOSFET

▼ Simple Drive Requirement BVDSS -30V

▼ Small Size & Lower Profile RDS(ON) 21mΩ

▼ RoHS Compliant & Halogen-Free ID-11A

Description

Absolute Maximum Ratings

Symbol Units

VDS V

VGS V

ID@TA=25℃A

ID@TA=70℃A

IDM A

PD@TA=25℃W

TSTG ℃

TJ℃

Symbol Value Unit

Rthj-c Maximum Thermal Resistance, Junction-case 6 ℃/W

Rthj-a Maximum Thermal Resistance, Junction-ambient335 ℃/W

Data and specifications subject to change without notice

201009214

1

AP4435GYT-HF

Rating

Halogen-Free Product

-30

+25

-11

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current3

-55 to 150

Continuous Drain Current3-8.7

Pulsed Drain Current1-40

Storage Temperature Range

3.57

-55 to 150

Thermal Data

Parameter

Total Power Dissipation

Operating Junction Temperature Range

Advanced Power MOSFETs from APEC provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost-effectiveness.

The PMPAK® 3x3 package is special for DC-DC converters

application and lower 1.0mm profile with backside heat sink.

D

D

D

D

SSSG

PMPAK® 3x3

G

D

S

Electrical Characteristics@Tj=25oC(unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Units

BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -30 - - V

RDS(ON) Static Drain-Source On-Resistance2VGS=-10V, ID=-10A - 17 21 mΩ

VGS=-4.5V, ID=-6A - 26 36 mΩ

VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 -1.95 -3 V

gfs Forward Transconductance VDS=-10V, ID=-6A - 15 - S

IDSS Drain-Source Leakage Current VDS=-30V, VGS=0V - - -10 uA

IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA

QgTotal Gate Charge2ID=-6A - 15 24 nC

Qgs Gate-Source Charge VDS=-15V - 3 - nC

Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 8 - nC

td(on) Turn-on Delay Time2VDS=-15V - 12 - ns

trRise Time ID=-1A - 7.5 - ns

td(off) Turn-off Delay Time RG=3.3Ω,VGS=-10V - 39 - ns

tfFall Time RD=15Ω-21-ns

Ciss Input Capacitance VGS=0V - 1260 2000 pF

Coss Output Capacitance VDS=-15V - 245 - pF

Crss Reverse Transfer Capacitance f=1.0MHz - 210 - pF

RgGate Resistance f=1.0MHz - 5.3 10.6 Ω

Source-Drain Diode

Symbol Parameter Test Conditions Min. Typ. Max. Units

VSD Forward On Voltage2IS=-2.9A, VGS=0V - - 1.2 V

trr Reverse Recovery Time2IS=-6A, VGS=0V, - 19 - ns

Qrr Reverse Recovery Charge dI/dt=100A/µs - 10 - nC

Notes:

1.Pulse width limited by Max. junction temperature.

2.Pulse test

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.

APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED

HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE

RELIABILITY, FUNCTION OR DESIGN.

3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec, 85oC at steady state.

2

AP4435GYT-HF

A

P4435GYT-HF

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance

v.s. Junction Temperature

Fi

g

5. Forward Characteristic o

f

Fig 6. Gate Threshold Voltage v.s.

Reverse Diode Junction Temperature

3

0

10

20

30

40

50

0123456

-V DS , Drain-to-Source Voltage (V)

-ID , Drain Current (A)

VG= -3.0V

-10V

-7.0V

-5.0V

-4.5V

TA=25 oC

0

10

20

30

40

50

0123456

-V DS , Drain-to-Source Voltage (V)

-ID , Drain Current (A)

TA= 150 oC-10V

-7.0V

-5.0V

-4.5V

VG= -3.0V

16

20

24

28

32

246810

-V GS , Gate-to-Source Voltage (V)

RDS(ON) (m

Ω

)

I

D=-6A

TA=25

℃

0.6

0.8

1.0

1.2

1.4

1.6

-50 0 50 100 150

Tj , Junction Temperature ( oC)

Normalized RDS(ON)

I

D=-10A

VG=-10V

0.4

0.6

0.8

1.0

1.2

1.4

-50 0 50 100 150

Tj , Junction Temperature ( oC)

Normalized -VGS(th) (V)

0

2

4

6

8

10

0 0.2 0.4 0.6 0.8 1 1.2

-V SD , Source-to-Drain Voltage (V)

-IS(A)

Tj=25 oCT j=150 oC

AP4435GYT-HF

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform

4

Q

VG

-4.5V

QGS QGD

QG

Charge

0

2

4

6

8

10

0102030

QG , Total Gate Charge (nC)

-VGS , Gate to Source Voltage (V)

I

D=-6A

VDS = -15 V

0

400

800

1200

1600

1 5 9 1317212529

-V DS , Drain-to-Source Voltage (V)

C (pF)

f

=1.0MH

z

Ciss

Coss

Crss

0.01

0.1

1

0.0001 0.001 0.01 0.1 1 10 100 1000

t , Pulse Width (s)

Normalized Thermal Response (Rthja)

PDM

Duty factor = t/T

Peak Tj = PDM x Rthja + Ta

Rthia=85 ℃/W

t

T

0.02

0.01

0.05

0.1

0.2

Duty factor=0.5

Sin

g

le Pulse

0.01

0.1

1

10

100

0.01 0.1 1 10 100

-V DS , Drain-to-Source Voltage (V)

-ID (A)

TA=25 oC

Single Pulse

100us

1ms

10ms

100ms

1s

DC

td(on) trtd(off) tf

VDS

VGS

10%

90%

Operation in this area

limited by RDS(ON)

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