BAR60, BAR61 Datasheet. Www.s Manuals.com. Siemens

User Manual: Marking of electronic components, SMD Codes 61, 617, 618, 61851ACBZ, 61851AIBZ, 61851BCBZ, 61851BIBZ, 61851CCBZ, 61851CIBZ, 61851DCBZ, 61851DIBZ, 61851ECBZ, 61851EIBZ, 61851FCBZ, 61851FIBZ, 61851GCBZ, 61851GIBZ, 61851HCBZ, 61851HIBZ, 61851ICBZ, 61851IIBZ, 61851JCBZ, 61851JIBZ, 61851KCBZ, 61851KIBZ, 61851LCBZ, 61851LIBZ, 619, 61S, 61U, 61V. Datasheets BAR61, FMMT617, FMMT618, FMMT619, ISL61851ACBZ, ISL61851AIBZ, ISL61851BCBZ, ISL61851BIBZ, ISL61851CCBZ, ISL61851CIBZ, ISL61851DCBZ, ISL61851DIBZ, ISL61851ECBZ,

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Silicon PIN Diodes

BAR 60
BAR 61

●

RF switch

●

RF attenuator for frequencies above 10 MHz

Type

Marking

Ordering Code
(tape and reel)

BAR 60

60

Q62702-A786

BAR 61

61

Q62702-A120

Pin Configuration

Package1)
SOT-143

Maximum Ratings per Diode
Parameter

Symbol

Values

Unit

Reverse voltage

VR

100

V

Forward current

IF

140

mA

Total power dissipation, TS ≤ 65 ˚C2)

Ptot

250

mW

Junction temperature

Tj

150

˚C

Storage temperature range

Tstg

– 55 … + 150

Operating temperature range

Top

– 55 … + 150

Junction - ambient 2)

Rth JA

≤

580

Junction - soldering point

Rth JS

≤

340

Thermal Resistance

1)
2)

K/W

For detailed information see chapter Package Outlines.
Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm.

Semiconductor Group

1

07.94

BAR 60
BAR 61

Electrical Characteristics per Diode
at TA = 25 ˚C, unless otherwise specified.
Parameter

Values

Symbol

Unit

min.

typ.

max.

–
–

–
–

100
1

nA
µA

–

–

1.25

V

–
–

0.25
0.2

0.5
–

DC/AC Characteristics
Reverse current
VR = 50 V
VR = 100 V

IR

Forward voltage
IF = 100 mA

VF

Diode capacitance
VR = 50 V, f = 1 MHz
VR = 0, f = 100 MHz

CT

Zero bias conductance
VR = 0, f = 100 MHz

gp

–

50

–

µS

Charge carrier life time
IF = 10 mA, IR = 6 mA

τL

–

1

–

µs

Differential forward resistance
f = 100 MHz, IF = 0.01 mA
IF = 0.1 mA
IF = 1.0 mA
IF = 10 mA

rf
–
–
–
–

2800
380
45
7

–
–
–
–

Semiconductor Group

2

pF

Ω

BAR 60
BAR 61

Forward current IF = f (VF)

Forward current IF = f (TS; TA*)
*Package mounted on alumina

Forward resistance rf = f (IF)
f = 100 MHz

Diode capacitance CT = f (VR)

Semiconductor Group

3

BAR 60
BAR 61

Application circuit for attenuation networks with diode BAR 60

Application circuit for attenuation networks with diode BAR 61

Semiconductor Group

4

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Title                           : BAR60, BAR61 - Datasheet. www.s-manuals.com.
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Subject                         : BAR60, BAR61 - Datasheet. www.s-manuals.com.
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