BAV99 Datasheet. Www.s Manuals.com. National

User Manual: Marking of electronic components, SMD Codes A7, A7 *, A7*, A7**, A7***, A7-, A7-**, A7-***, A7122A, A7221, A7221A, A7221B, A7231, A7312, A74, A7404, A7406, A7407, A75, A7525, A75A, A76, A78, A785J, A79A, A7W, A7p, A7s, A7t. Datasheets A7122AE5R, A7122AE6R, A7221AE6R, A7221BE6R, A7221TE6R, A7231TE6R, A7312E6R, A7404E6R, A7406E6R, A7407E6R, A7525E6R-ADJ, ACPL-785J, AO3407, BAV99, BAV99LT1G, BAV99S, BAV99U, BAV99W, BAV99WT1, BFG310W/XR, HSMS-2807, LMV341MG, LMV715MF, LMV931MF, LMV931MG, MMBD4448HTC, NC7WZ04L6X

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BAV99

Discrete POWER & Signal
Technologies

N
BAV99
CONNECTION DIAGRAM

3

3

3

A7
2
1

SOT-23

2

1

2

1

High Conductance Ultra Fast Diode
Sourced from Process 1P.

Absolute Maximum Ratings*
Symbol

TA = 25°C unless otherwise noted

Parameter

Value

Units

W IV

Working Inverse Voltage

70

V

IO

Average Rectified Current

200

mA

IF

DC Forward Current

600

mA

if

Recurrent Peak Forward Current

700

mA

if(surge)

Peak Forward Surge Current
Pulse width = 1.0 second
Pulse width = 1.0 microsecond
Storage Temperature Range

1.0
2.0
-55 to +150

A
A
°C

150

°C

Tstg
TJ

Operating Junction Temperature

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics
Symbol
PD
RθJA

TA = 25°C unless otherwise noted

Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient

Max

Units

BAV99
350
2.8
357

mW
mW/°C
°C/W

(continued)

Electrical Characteristics
Symbol

TA = 25°C unless otherwise noted

Parameter

Test Conditions

Min

Max

Units

BV

Breakdown Voltage

I R = 100 µA

IR

Reverse Current

VF

Forward Voltage

CO

Diode Capacitance

VR = 70 V
VR = 25 V, TA = 150°C
VR = 70 V, TA = 150°C
I F = 1.0 mA
I F = 10 mA
I F = 50 mA
I F = 150 mA
VR = 0, f = 1.0 MHz

2.5
30
50
715
855
1.0
1.25
1.5

µA
µA
µA
mV
mV
V
V
pF

TRR

Reverse Recovery Time

6.0

nS

VFM

Peak Forward Voltage

I F = IR = 10 mA, IRR = 1.0 mA,
RL = 100Ω
I F = 10 mA, tr = 20 nS

1.75

V

70

V

Typical Characteristics

150

Ta= 25°C

140

130

120

110

1

2

3
5
10
20 30
50
I R - REVERSE CURRENT (uA)

400
350
300
250
225
3

5

10

20

30

IFIF - FORWARD CURRENT (uA)

50

250
200
150
100
50
0
10

100

20
30
50
VR - REVERSE VOLTAGE (V)

70

100

GENERAL RULE: The Reverse Current of a diode will approximately
double for every ten (10) Degree C increase in Temperature

FORWARD VOLTAGE vs FORWARD CURRENT
VF - 0.1 to 10 mA
VVFF - FORWARD VOLTAGE (mV)

VVFF - FORWARD VOLTAGE (mV)

485
Ta= 25°C
450

2

300 Ta= 25°C

100

FORWARD VOLTAGE vs FORWARD CURRENT
VF - 1.0 to 100 uA

1

1N4150 MMBD1201 1205
REVERSE CURRENT vs REVERSE VOLTAGE
IR - 10 to 100 V
IR - REVERSE CURRENT (nA)

VRR - REVERSE VOLTAGE (V)
V

50
0
05
REVERSE VOLTAGE vs REVERSE CURRENT
BV - 1.0 to 100 uA

725
Ta= 25°C
700
650
600
550
500
450
0.1

0.2 0.3 0.5
1
2
3
5
IF - FORWARD CURRENT (mA)

10

BAV99

High Conductance Ultra Fast Diode

(continued)

Typical Characteristics

(continued)

1.5
1.4

CAPACITANCE vs REVERSE VOLTAGE
VR - 0.0 to 15 V

Ta= 25°C

1.3
CAPACITANCE (pF)

VFF - FORWARD VOLTAGE (V)

FORWARD VOLTAGE vs FORWARD CURRENT
VF - 10 - 800 mA

1.2
1
0.8
0.6
10

20

30
50
100
200 300
IF - FORWARD CURRENT (mA)

1.1

1

500

Ta= 25°C

3
2.5
2
1.5
20

30
40
50
REVERSE CURRENT (mA)

60

IRR (Reverse Recovery Current) = 1.0 mA - Rloop = 100 Ohms

2

4
6
8
10
REVERSE VOLTAGE (V)

500

IR

400

-F

OR
WA
R

300
200
100
0

0

DO-35 Pkg

300
SOT-23 Pkg

200

100

0

0

D

CU
R

RE
NT

ST
EA
D

50
100
150
TA - AMBIENT TEMPERATURE ( o C)

POWER DERATING CURVE

400

12

Y
Io - A
ST
VERA
AT
GE R
E
ECTIF
-m
IE D C
A
URR
E NT
- mA

500
P
PDD - POWER DISSIPATION (mW)

1
10

0

Average Rectified Current (Io) &
Forward Current (I F) versus
Ambient Temperature (TA)
PD - POWER DISSIPATION (mW)

4
3.5

Ta= 25°C

1.2

REVERSE RECOVERY TIME vs REVERSE CURRENT
TRR - IR 10 mA vs 60 mA
REVERSE RECOVERY (nS)

BAV99

High Conductance Ultra Fast Diode

50
100
150
IO - AVERAGE TEMPERATURE ( oC)

200

14 15

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