BAV99 Datasheet. Www.s Manuals.com. National

User Manual: Marking of electronic components, SMD Codes A7, A7 *, A7*, A7**, A7***, A7-, A7-**, A7-***, A7122A, A7221, A7221A, A7221B, A7231, A7312, A74, A7404, A7406, A7407, A75, A7525, A75A, A76, A78, A785J, A79A, A7W, A7p, A7s, A7t. Datasheets A7122AE5R, A7122AE6R, A7221AE6R, A7221BE6R, A7221TE6R, A7231TE6R, A7312E6R, A7404E6R, A7406E6R, A7407E6R, A7525E6R-ADJ, ACPL-785J, AO3407, BAV99, BAV99LT1G, BAV99S, BAV99U, BAV99W, BAV99WT1, BFG310W/XR, HSMS-2807, LMV341MG, LMV715MF, LMV931MF, LMV931MG, MMBD4448HTC, NC7WZ04L6X

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Discrete POWER & Signal
Technologies
N
High Conductance Ultra Fast Diode
Sourced from Process 1P.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Value Units
WIV Working Inverse Voltage 70 V
IOAverage Rectified Current 200 mA
IFDC Forward Current 600 mA
ifRecurrent Peak Forward Current 700 mA
if(surge) Peak Forward Surge Current
Pulse width = 1.0 second
Pulse width = 1.0 microsecond 1.0
2.0 A
A
Tstg Storage Temperature Range -55 to +150 °C
TJOperating Junction Temperature 150 °C
Symbol Characteristic Max Units
BAV99
PDTotal Device Dissipation
Derate above 25°C350
2.8 mW
mW/°C
RθJA Thermal Resistance, Junction to Ambient 357 °C/W
BAV99
3
21
CONNECTION DIAGRAM
A7
3
12
SOT-23
3
1
2
BAV99
Electrical Characteristics TA = 25°C unless otherwise noted
Typical Characteristics
Symbol Parameter Test Conditions Min Max Units
BVBreakdown Voltage IR = 100 µA70V
I
R
Reverse Current VR = 70 V
VR = 25 V, TA = 150°C
VR = 70 V, TA = 150°C
2.5
30
50
µA
µA
µA
VFForward Voltage IF = 1.0 mA
IF = 10 mA
IF = 50 mA
IF = 150 mA
715
855
1.0
1.25
mV
mV
V
V
CODiode Capacitance VR = 0, f = 1.0 MHz 1.5 pF
TRR Reverse Recovery Time IF = IR = 10 mA, IRR = 1.0 mA,
RL = 100Ω6.0 nS
VFM Peak Forward Voltage IF = 10 mA, tr = 20 nS 1.75 V
50 0 05
REVERSE VOLTAGE vs REVERSE CURRENT
BV - 1.0 to 100 uA
1 2 3 5 10 20 30 50 100
110
120
130
140
150
I - REVERSE CURRENT (uA)
V - REVERSE VOLTAGE (V)
R
R
Ta= 25°C
R
R
Ta= 25°C
1N4150
MMBD1201 1205
REVERSE CURRENT vs REVERSE VOLTAGE
IR - 10 to 100 V
GENERAL RULE: The Reverse Current of a diode will approximately
double for every ten (10) Degree C increase in Temperature
10 20 30 50 70 100
0
50
100
150
200
250
300
V - REVERSE VOLTAGE (V)
I - REVERSE CURRENT (nA)
225
FORWARD VOLTAGE vs FORWARD CURRENT
VF - 1.0 to 100 uA
1 2 3 5 10 20 30 50 100
250
300
350
400
450
I - FORWARD CURRENT (uA)
V - FORWARD VOLTAGE (mV)
F
F
485 Ta= 25°C
FORWARD VOLTAGE vs FORWARD CURRENT
VF - 0.1 to 10 mA
0.1 0.2 0.3 0.5 1 2 3 5 10
450
500
550
600
650
700
I - FORWARD CURRENT (mA)
V - FORWARD VOLTAGE (mV)
F
F
725 Ta= 25°C
IF
VFVR
VF
BAV99
High Conductance Ultra Fast Diode
(continued)
Typical Characteristics (continued)
Average Rectified Current (Io) &
Forward Current (I ) versus
Ambient Temperature (T )
050100150
0
100
200
300
400
500
T - AMBIENT TEMPERATURE ( C)
P - POWER DISSIPATION (mW)
I - FORWARD CURRENT STEADY STATE - mA
o
D
R
A
F
Io - AVERAGE RECTIFIED CURRENT - mA
A
FORWARD VOLTAGE vs FORWARD CURRENT
VF - 10 - 800 mA
10 20 30 50 100 200 300 500
0.6
0.8
1
1.2
1.4
I - FORWARD CURRENT (mA)
V - FORWARD VOLTAGE (V)
F
F
1.5 Ta= 25°C
CAPACITANCE vs REVERSE VOLTAGE
VR - 0.0 to 15 V
02468101214
1
1.1
1.2
1.3
REVERSE VOLTAGE (V)
CAPACITANCE (pF)
Ta= 25°C
15
REVERSE RECOVERY TIME vs REVERSE CURRENT
TRR - IR 10 mA vs 60 mA
IRR (Reverse Recovery Current) = 1.0 mA - Rloop = 100 Ohms
10 20 30 40 50 60
1
1.5
2
2.5
3
3.5
4
REVERSE CURRENT (mA)
REVERSE RECOVERY (nS)
Ta= 25°C
POWER DERATING CURVE
0 50 100 150 200
0
100
200
300
400
500
I - AVERAGE TEMPERATURE ( C)
P - POWER DISSIPATION (mW)
O
D
o
DO-35 Pkg
SOT-23 Pkg
VF
PD
BAV99
High Conductance Ultra Fast Diode
(continued)
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