BAV99 Datasheet. Www.s Manuals.com. R1.1.0 Fairchild
User Manual: Marking of electronic components, SMD Codes A7, A7 *, A7*, A7**, A7***, A7-, A7-**, A7-***, A7122A, A7221, A7221A, A7221B, A7231, A7312, A74, A7404, A7406, A7407, A75, A7525, A75A, A76, A78, A785J, A79A, A7W, A7p, A7s, A7t. Datasheets A7122AE5R, A7122AE6R, A7221AE6R, A7221BE6R, A7221TE6R, A7231TE6R, A7312E6R, A7404E6R, A7406E6R, A7407E6R, A7525E6R-ADJ, ACPL-785J, AO3407, BAV99, BAV99LT1G, BAV99S, BAV99U, BAV99W, BAV99WT1, BFG310W/XR, HSMS-2807, LMV341MG, LMV715MF, LMV931MF, LMV931MG, MMBD4448HTC, NC7WZ04L6X
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BAV99 200 mA 70 V High Conductance Ultra-Fast Switching Diode Features Description • • • • The BAV99 is a 350 mW high-speed switching diode array with series-pair diode configuration. It achieves high-current conductivity, up to 200 mA, in a very small 7mm2 footprint. These features make the BAV99 optimal for area-constrained applications that need a little extra power capability. High Conductance: IF = 200 mA Fast Switching Speed: trr < 6 ns Maximum Small Plastic SOT-23 Package Series-Pair Configuration For common cathode and common anode high-speed switching diodes, explore Fairchild's BAV70 and BAW56. Looking for more options in the SOT-23 package? Check Fairchild's MMBD family. Applications • High-Speed Switching Applications Connection Diagram 3 3 3 A7 2 1 2 1 1 2 SOT-23 Ordering Information Part Number Marking Package Packing Method BAV99 A7 SOT-23 3L Tape and Reel, Reel 7 inch BAV99_D87Z A7 SOT-23 3L Tape and Reel, Reel 13 inch © 2001 Fairchild Semiconductor Corporation BAV99 Rev. 1.1.0 www.fairchildsemi.com 1 BAV99 — 200 mA 70 V High Conductance Ultra-Fast Switching Diode April 2014 Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Value Unit VRRM Maximum Repetitive Reverse Voltage 70 V IF(AV) Average Rectified Forward Current 200 mA IFSM Non-Repetitive Peak Forward Surge Current TSTG Storage Temperature Range -55 to +150 °C Operating Junction Temperature Range -55 to +150 °C TJ Parameter Pulse Width = 1.0 Second 1.0 Pulse Width = 300 Microseconds 8.0 A Note: 1. These ratings are based on a maximum junction temperature of 150°C. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty cycle operations. Thermal Characteristics(2) Values are at TA = 25°C unless otherwise noted. Symbol PD RθJA Parameter Value Unit Power Dissipation 350 mW Thermal Resistance, Junction to Ambient 357 °C/W Note: 2. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. Electrical Characteristics Values are at TA = 25°C unless otherwise noted. Symbol VR VF IR CT trr Parameter Breakdown Voltage, per Diode Forward Voltage, per Diode Conditions IR = 100 μA Max. 70 Unit V IF = 1 mA 715 IF = 10 mA 855 IF = 50 mA 1.00 IF = 150 mA 1.25 mV V VR = 70 V 2.5 VR = 25 V, TA = 150°C 30.0 VR = 70 V, TA = 150°C 50.0 Total Capacitance, per Diode VR = 0 V, f = 1.0 MHz 1.5 pF Reverse-Recovery Time, per Diode IF = IR = 10 mA, IRR = 1 mA, RL = 100 Ω 6.0 ns Reverse Leakage, per Diode © 2001 Fairchild Semiconductor Corporation BAV99 Rev. 1.1.0 Min. μA www.fairchildsemi.com 2 BAV99 — 200 mA 70 V High Conductance Ultra-Fast Switching Diode Absolute Maximum Ratings(1) 150 140 130 120 110 1 2 Ta= 25° C 300 Reverse Current, IR [nA] Reverse Voltage, V R [V] Ta= 25 °C 3 5 10 20 30 50 250 200 150 100 50 0 100 10 20 Reverse Current, IR [uA] 30 50 70 100 Reverse Voltage, V R [V] Figure 2. Reverse Current vs. Reverse Voltage Figure 1. Reverse Voltage vs. Reverse Current Ta= 25 ° C Ta= 25 ° C 700 Forward Voltage, VF [mV] Forward Voltage, VF [mV] 450 400 350 300 650 600 550 500 250 450 1 2 3 5 10 20 30 50 100 0.1 0.2 0.3 0.5 1 2 3 5 10 Forward Current, IF [mA] Forward Current, IF [uA] Figure 4. Forward Voltage vs. Forward Current VF - 0.1 to 10 mA Figure 3. Forward Voltage vs. Forward Current VF - 1 to 100 μA 1.3 Ta= 25 ° C Ta= 25 ° C Total Capacitance [pF] Forward Voltage, VF [V] 1.4 1.2 1.0 0.8 0.6 10 20 30 50 100 200 300 1.1 1.0 500 0 Forw ard C urrent, I F [m A ] 2 4 6 8 10 12 14 R everse V oltage [V ] Figure 6. Total Capacitance vs. Reverse Voltage Figure 5. Forward Voltage vs. Forward Current VF - 10 to 800 mA © 2001 Fairchild Semiconductor Corporation BAV99 Rev. 1.1.0 1.2 www.fairchildsemi.com 3 BAV99 — 200 mA 70 V High Conductance Ultra-Fast Switching Diode Typical Performance Characteristics 400 Ta= 25 °C 3.5 300 3.0 Current [mA] Reverse Recovery Time [ns] 4.0 2.5 2.0 200 IF (A V ) -A VE RA GE RE CT 100 1.5 IF IE DC UR RE NT -m A 0 1.0 10 20 30 40 50 0 60 50 100 150 o Reverse Current [mA] Ambient Temperature, T A [ C] Figure 8. Average Rectified Current (IF(AV)) vs. Ambient Temperature (TA) Figure 7. Reverse-Recovery Time vs. Reverse Current Power Dissipation, PD [mW] 500 400 300 SOT-23 Pkg 200 100 0 0 25 50 75 100 125 150 175 200 o Average Tem perature, [ C] Figure 9. Power Derating Curve © 2001 Fairchild Semiconductor Corporation BAV99 Rev. 1.1.0 www.fairchildsemi.com 4 BAV99 — 200 mA 70 V High Conductance Ultra-Fast Switching Diode Typical Performance Characteristics (Continued) BAV99 — 200 mA 70 V High Conductance Ultra-Fast Switching Diode Physical Dimensions SOT-23 0.95 2.92±0.20 3 1.40 1.30+0.20 -0.15 1 2.20 2 0.60 0.37 (0.29) 0.95 0.20 1.00 A B 1.90 1.90 LAND PATTERN RECOMMENDATION SEE DETAIL A 1.20 MAX 0.10 0.00 (0.93) 0.10 C C 2.40±0.30 NOTES: UNLESS OTHERWISE SPECIFIED GAGE PLANE 0.23 0.08 A) REFERENCE JEDEC REGISTRATION TO-236, VARIATION AB, ISSUE H. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE INCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR EXTRUSIONS. D) DIMENSIONING AND TOLERANCING PER ASME Y14.5M - 1994. E) DRAWING FILE NAME: MA03DREV10 0.25 0.20 MIN (0.55) SEATING PLANE SCALE: 2X Figure 10. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/dwg/MA/MA03D.pdf. For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area: http://www.fairchildsemi.com/packing_dwg/PKG-MA03D.pdf. © 2001 Fairchild Semiconductor Corporation BAV99 Rev. 1.1.0 www.fairchildsemi.com 5 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are 2. A critical component in any component of a life support, device, or intended for surgical implant into the body or (b) support or sustain system whose failure to perform can be reasonably expected to life, and (c) whose failure to perform when properly used in cause the failure of the life support device or system, or to affect its accordance with instructions for use provided in the labeling, can be safety or effectiveness. reasonably expected to result in a significant injury of the user. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. 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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I68 © Fairchild Semiconductor Corporation www.fairchildsemi.com www.s-manuals.com
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