BAV99 Datasheet. Www.s Manuals.com. R1.1.0 Fairchild

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BAV99 — 200 mA 70 V High Conductance Ultra-Fast Switching Diode
© 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com
BAV99 Rev. 1.1.0 1
April 2014
BAV99
200 mA 70 V High Conductance Ultra-Fast Switching
Diode
Features
High Conductance: IF = 200 mA
Fast Switching Speed: trr < 6 ns Maximum
Small Plastic SOT-23 Package
Series-Pair Configuration
Applications
High-Speed Switching Applications
Ordering Information
Part Number Marking Package Packing Method
BAV99 A7 SOT-23 3L Tape and Reel, Reel 7 inch
BAV99_D87Z A7 SOT-23 3L Tape and Reel, Reel 13 inch
SOT-23
3
1
2
Connection Diagram
3
1
12
3
A7
2
Description
The BAV99 is a 350 mW high-speed switching diode
array with series-pair diode configuration. It achieves
high-current conductivity, up to 200 mA, in a very small
7mm2 footprint. These features make the BAV99 optimal
for area-constrained applications that need a little extra
power capability.
For common cathode and common anode high-speed
switching diodes, explore Fairchild's BAV70 and BAW56.
Looking for more options in the SOT-23 package? Check
Fairchild's MMBD family.
BAV99 — 200 mA 70 V High Conductance Ultra-Fast Switching Diode
© 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com
BAV99 Rev. 1.1.0 2
Absolute Maximum Ratings(1)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Note:
1. These ratings are based on a maximum junction temperature of 150°C.
These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed
or low-duty cycle operations.
Thermal Characteristics(2)
Values are at TA = 25°C unless otherwise noted.
Note:
2. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol Parameter Value Unit
VRRM Maximum Repetitive Reverse Voltage 70 V
IF(AV) Average Rectified Forward Current 200 mA
IFSM Non-Repetitive Peak
Forward Surge Current
Pulse Width = 1.0 Second 1.0 A
Pulse Width = 300 Microseconds 8.0
TSTG Storage Temperature Range -55 to +150 °C
TJOperating Junction Temperature Range -55 to +150 °C
Symbol Parameter Value Unit
PDPower Dissipation 350 mW
RθJA Thermal Resistance, Junction to Ambient 357 °C/W
Symbol Parameter Conditions Min. Max. Unit
VRBreakdown Voltage, per Diode IR = 100 μA70 V
VFForward Voltage, per Diode
IF = 1 mA 715 mV
IF = 10 mA 855
IF = 50 mA 1.00 V
IF = 150 mA 1.25
IRReverse Leakage, per Diode
VR = 70 V 2.5
μAVR = 25 V, TA = 150°C30.0
VR = 70 V, TA = 150°C50.0
CTTotal Capacitance, per Diode VR = 0 V, f = 1.0 MHz 1.5 pF
trr Reverse-Recovery Time,
per Diode
IF = IR = 10 mA,
IRR = 1 mA,
RL = 100 Ω
6.0 ns
BAV99 — 200 mA 70 V High Conductance Ultra-Fast Switching Diode
© 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com
BAV99 Rev. 1.1.0 3
Typical Performance Characteristics
Figure 1. Reverse Voltage vs. Reverse Current Figure 2. Reverse Current vs. Reverse Voltage
Figure 3. Forward Voltage vs. Forward Current
VF - 1 to 100 μAFigure 4. Forward Voltage vs. Forward Current
VF - 0.1 to 10 mA
Figure 5. Forward Voltage vs. Forward Current
VF - 10 to 800 mA Figure 6. Total Capacitance vs. Reverse Voltage
110
120
130
140
150
1 2 3 5 10 20 30 50 100
Ta= 25 C
Reverse Voltage, V
R [V]
Reverse Current, IR [uA]
°
0
50
100
150
200
250
300
10 20 30 50 70 100
Ta= 25 C
Reverse Current, I
R
[nA]
Reverse Volta
g
e, V
R
[
V
]
°
250
300
350
400
450
1 2 3 5 10 20 30 50 100
Ta= 25 C
Forward Voltage, V
F
[mV]
Forward Current
,
I
F
[
uA
]
°
450
500
550
600
650
700
0.1 0.2 0.3 0.5 1 2 3 5 10
Ta= 25 C
Forward Voltage, V
F
[mV]
Forward Current
I
F
[
mA
]
°
0.6
0.8
1.0
1.2
1.4
10 20 30 50 100 200 300 500
Ta= 25 C
Forward Voltage, V
F
[V]
Forward Current, I
F
[mA]
°
02468101214
1.0
1.1
1.2
1.3
Ta= 25 C
Total Capacitance [pF]
Reverse Voltage [V]
°
BAV99 — 200 mA 70 V High Conductance Ultra-Fast Switching Diode
© 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com
BAV99 Rev. 1.1.0 4
Typical Performance Characteristics (Continued)
F i g u r e 7 . R e ve r s e - R e c ov e r y T im e v s .
R e v e r s e C u r r e n t Figure 8. Average Rectified Current (IF(AV)) vs.
Ambient Temperature (TA)
Figure 9. Power Derating Curve
10 20 30 40 50 60
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Ta= 25 C
Reverse Recovery Time [ns]
Reverse Current [mA]
°
0 50 100 150
0
100
200
300
400
I
F(AV)
- AVERAGE RECTIFIED CURRENT - mA
Current [mA]
Ambient Temperature, TA [ oC]
0 25 50 75 100 125 150 175 200
0
100
200
300
400
500
SOT-23 Pkg
Power Dissipation, PD [mW]
Average Temperature, [oC]
BAV99 — 200 mA 70 V High Conductance Ultra-Fast Switching Diode
© 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com
BAV99 Rev. 1.1.0 5
Physical Dimensions
Figure 10. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the
warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/dwg/MA/MA03D.pdf.
For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:
http://www.fairchildsemi.com/packing_dwg/PKG-MA03D.pdf.
LAND PATTERN
RECOMMENDATION
NOTES: UNLESS OTHERWISE SPECIFIED
A) REFERENCE JEDEC REGISTRATION
TO-236, VARIATION AB, ISSUE H.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS ARE INCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR EXTRUSIONS.
D) DIMENSIONING AND TOLERANCING PER
ASME Y14.5M - 1994.
E) DRAWING FILE NAME: MA03DREV10
3
12
SEE DETAIL A
SEATING
PLANE
SCALE: 2X
GAGE PLANE
(0.55)
(0.93)
1.20 MAX
C
0.10
0.00
0.10 C
2.40±0.30
2.92±0.20
1.30+0.20
-0.15
0.60
0.37
0.20 A B
1.90
0.95
(0.29)
0.95
1.40
2.20
1.00
1.90
0.25
0.23
0.08
0.20 MIN
SOT-23
© Fairchild Semiconductor Corporation www.fairchildsemi.com
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance
Information
Formative
/
In Design
Datasheet contains the design specifications for product development. Specifications may change
in any manner without notice.
Preliminary First Production
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
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Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve the design.
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Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I68
®
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